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Renesas FX6KMJ-3
- Part No.:
- FX6KMJ-3
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
FX6KMJ-3.pdf
- Description:
- 6A, 150V, 0.5
- Quantity:
- Payment:
- Shipping:
Inventory:750
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Product details
Overview
FX6KMJ-3 from Renesas Electronics is a P-channel enhancement-mode power MOSFET designed for high-speed switching in DC-DC converters, motor control, and solenoid drivers. It features –150 V drain-source voltage rating, 0.53 Ω maximum rDS(ON) at –3 A/–10 V, integrated fast-recovery body diode with 100 ns typical reverse recovery time, and TO-220FN package with isolated case.
For engineers reviewing the FX6KMJ-3 datasheet, FX6KMJ-3 pinout, FX6KMJ-3 application, or FX6KMJ-3 equivalent, this device is selected for robust high-voltage Pch switching where low gate drive voltage (4 V), thermal stability up to +150 °C channel temperature, and avalanche-rated pulsed current (–6 A) are critical design requirements.
Technical Context
The FX6KMJ-3 employs a vertical trench-gate structure optimized for low on-resistance and fast switching in high-side configurations. Its –1.5 V typical gate threshold voltage enables reliable turn-on with logic-level gate drivers, while its 2420 pF input capacitance and 69 pF reverse transfer capacitance support stable operation under high dV/dt conditions.
Thermal performance is defined by 5.00 °C/W channel-to-case thermal resistance and 2000 VAC isolation rating between terminals and case. The integrated fast-recovery body diode eliminates need for external antiparallel diodes in flyback and H-bridge topologies, with –1.0 V typical source-drain forward voltage at –3 A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | –150 V: Maximum blocking voltage in off-state; supports 120 VAC rectified bus and industrial 100 VDC systems. |
| rDS(ON) max | 0.53 Ω at –3 A/–10 V: Limits conduction loss to ≤4.8 W at full rated current, enabling compact heatsink design. |
| ID (continuous) | –6 A at Tc = 25°C: Sustained load current capability with 25 W power dissipation limit and derating above 25°C. |
| trr (typ.) | 100 ns: Enables >100 kHz switching in hard-switched DC-DC converters without excessive diode recovery loss. |
| VGS(th) | –1.5 V (typ.): Ensures full enhancement with 3.3 V or 5 V microcontroller GPIOs; negative threshold prevents accidental turn-on. |
| Rth(ch-c) | 5.00 °C/W: Allows direct mounting to heatsink; junction-to-case path dominates thermal management in TO-220FN layout. |
| Viso | 2000 VAC (1 min): Provides reinforced insulation for primary-side switching in isolated power supplies and motor drives. |
Pinout & Package
FX6KMJ-3 uses the TO-220FN package - a full-molded, isolated-tab variant of TO-220 with internal electrical isolation between the drain-connected tab and leads. The case is electrically connected to Drain (Pin 2), enabling direct heatsinking without insulating hardware while maintaining creepage/clearance compliance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control terminal | Receives negative gate-source voltage to enhance channel; requires –10 V for lowest rDS(ON); compatible with standard Pch gate drivers. |
| 2 (Drain) | High-side power output | Internally bonded to metal tab; must be connected to heatsink and high-voltage rail; provides 2000 VAC isolation from case. |
| 3 (Source) | Reference node | Serves as return path for load current and gate drive reference; ties to system ground or floating supply common in high-side switch applications. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at –4 V VGS, eliminating need for level-shifting circuitry when driven by 3.3 V/5 V MCUs or gate driver ICs. |
| Avalanche-rated operation | Rated for –6 A pulsed avalanche current (L = 100 µH), enabling robustness against inductive load switching transients without external snubbers. |
| Fast-recovery body diode | 100 ns trr and –1.0 V VSD at –3 A reduce switching losses and EMI in freewheeling paths, replacing discrete Schottky diodes in cost-sensitive designs. |
| Isolated package | TO-220FN construction provides 2000 VAC isolation between leads and case, simplifying safety certification for Class I and II AC/DC power supplies. |
| High-temperature operation | Rated for –55°C to +150°C channel temperature, supporting under-hood automotive, industrial motor control, and enclosed power converter environments. |
Applications
| Industrial DC-DC Converters | Automotive Body Control Modules |
|---|---|
Use Scenario: Step-down conversion from 24 V battery to 5 V/3.3 V for ECUs and sensors in commercial vehicles. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch in buck topology, operating at 200–500 kHz with forced-air or passive cooling. Use Value: Low rDS(ON) minimizes conduction loss at 6 A peak load; integrated diode eliminates external component count and improves reliability over discrete solutions. |
Use Scenario: Power distribution to door locks, window lifters, and mirror actuators controlled by LIN or CAN nodes. IC Role / Device Role / Timing Role: High-side load switch with current limiting and diagnostics, driven by 5 V microcontroller outputs. Use Value: –1.5 V VGS(th) ensures clean turn-on with MCU GPIOs; avalanche rating withstands inductive kickback from solenoids and motors without clamping circuits. |
| LED Streetlight Drivers | Industrial Motor Start/Stop Circuits |
Use Scenario: Constant-current regulation for 40–100 W LED arrays powered from 100–300 VDC intermediate bus. IC Role / Device Role / Timing Role: Primary switching element in buck-boost or SEPIC LED driver, handling 150 V reverse voltage during dimming transitions. Use Value: –150 V VDSS margin accommodates line surges and ripple; 100 ns trr prevents diode-induced shoot-through in high-frequency PWM dimming. |
Use Scenario: On/off control of 24–48 V DC brushed motors in factory automation conveyors and robotic joints. IC Role / Device Role / Timing Role: High-side power switch in half-H-bridge configuration, paired with N-channel low-side FET for bidirectional control. Use Value: TO-220FN isolated tab allows direct mounting to grounded chassis heatsink; 24 A pulsed ID supports motor inrush currents without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTP10P15T | –150 V VDSS, 0.75 Ω rDS(ON) max at –5 A/–10 V; TO-220 non-isolated package; no specified trr. | Lacks integrated fast-recovery diode; requires external diode for inductive loads; lower thermal isolation limits use in safety-critical AC/DC. | Select when cost is prioritized over diode integration and isolation; verify external diode selection and heatsink insulation. |
| IRF9540NPBF | –100 V VDSS, 0.20 Ω rDS(ON) max at –6.7 A/–10 V; TO-220 non-isolated; trr not specified. | Lower voltage rating restricts use to ≤72 VDC systems; higher conduction efficiency but no avalanche rating or isolation. | Choose only for 48 V or lower bus applications where VDSS margin is sufficient and isolation is not required. |
Compared with IXTP10P15T and IRF9540NPBF, FX6KMJ-3 delivers superior system-level integration via its isolated TO-220FN package, 100 ns trr body diode, and –150 V/–6 A avalanche-rated operation - making it uniquely suited for space-constrained, safety-compliant, and high-reliability industrial and transportation power switches.
Availability
FX6KMJ-3 is available at Aetrix Electronics and suitable for industrial motor control, automotive body electronics, and LED streetlight drivers requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.
Supply support for FX6KMJ-3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The FX6KMJ-3 belongs to Renesas' legacy high-voltage power MOSFET product line, engineered specifically for rugged high-side switching in industrial power conversion and electromechanical control systems where reliability, isolation, and fast diode recovery are essential.
FAQ
What is the maximum continuous drain current rating for FX6KMJ-3?
The FX6KMJ-3 has a maximum continuous drain current (ID) of –6 A at case temperature Tc = 25°C. This rating assumes proper heatsinking and derates linearly above 25°C per the 5.00 °C/W thermal resistance; at Tc = 100°C, the usable ID drops to approximately –3.5 A. Always verify actual channel temperature using thermal simulation or measurement in final layout.
Does FX6KMJ-3 have an integrated body diode, and what is its recovery time?
Yes, FX6KMJ-3 includes an integrated fast-recovery body diode with a typical reverse recovery time (trr) of 100 ns under IS = –6 A and di/dt = 100 A/µs conditions. This diode is rated for continuous forward current up to –6 A and supports high-frequency freewheeling in buck, flyback, and H-bridge topologies without external diode addition.
Can FX6KMJ-3 be driven directly by a 3.3 V microcontroller GPIO?
No - FX6KMJ-3 is a P-channel MOSFET requiring a negative gate-source voltage to turn on. A 3.3 V GPIO alone cannot provide the necessary –3.3 V or greater VGS swing. It must be used with a dedicated P-channel gate driver (e.g., TC4427 configured for high-side drive) or level-shifting circuit to generate –4 V to –10 V relative to source potential.
What is the isolation voltage rating of the FX6KMJ-3 TO-220FN package?
The FX6KMJ-3 TO-220FN package provides 2000 VAC isolation (1 minute) between all leads and the metal tab (drain-connected case). This isolation enables safe mounting to grounded heatsinks in AC/DC power supplies and meets basic insulation requirements for industrial equipment per IEC 60950-1 and IEC 62368-1 standards.
Is FX6KMJ-3 suitable for automotive under-hood applications?
FX6KMJ-3 is rated for channel temperatures from –55°C to +150°C and carries Renesas' "Standard" quality grade, which covers industrial and consumer applications including non-safety-critical automotive body electronics. It is not qualified for engine compartment use (AEC-Q101) or safety-critical systems; for under-hood deployment, consult Renesas' automotive-grade alternatives such as the RQ3E080AT series.
FX6KMJ-3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 10V
- Rds On (Max) @ Id, Vgs:
- 530mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2420 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220FN
FX6KMJ-3 FAQ
1.How can I place an order for FX6KMJ-3 through Aetrix?
Please submit a Request for Quotation (RFQ) for FX6KMJ-3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FX6KMJ-3 reliable?
The price and inventory of FX6KMJ-3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FX6KMJ-3 is usually 5 days.
3.What payment methods are accepted for FX6KMJ-3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FX6KMJ-3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FX6KMJ-3?
FX6KMJ-3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FX6KMJ-3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FX6KMJ-3?
For technical support, including FX6KMJ-3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FX6KMJ-3 requirements.
6.How does Aetrix verify that FX6KMJ-3 is sourced from the original manufacturer or authorized distributors?
All FX6KMJ-3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FX6KMJ-3 meets industry standards.
7.What is the process for return or replacement of FX6KMJ-3?
All FX6KMJ-3 units undergo pre-shipment inspection (PSI). If there is an issue with FX6KMJ-3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FX6KMJ-3 part is unused and in its original packaging.
Return procedure for FX6KMJ-3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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