Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. GAN063-650WSAQ

Name: GAN063-650WSAQ
Brand: Nexperia USA Inc.
SKU: GAN063-650WSAQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: GAN063-650WSAQ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: GAN063-650WSAQ.pdf

Description:: GANFET N-CH 650V 34.5A TO247-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:547

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

GAN063-650WSAQ from Nexperia is a 650 V, 50 mΩ normally-off gallium nitride (GaN) power FET combining high-voltage GaN HEMT and low-voltage silicon MOSFET technologies. It delivers 34.5 A continuous drain current at 25 °C mounting base temperature, supports ±20 V gate drive tolerance, and features 800 V transient over-voltage capability - deployed in bridgeless totempole PFC and PV inverters requiring fast switching and low conduction loss.

For engineers reviewing the GAN063-650WSAQ datasheet, GAN063-650WSAQ pinout, GAN063-650WSAQ application, or GAN063-650WSAQ equivalent, key selection criteria include R_DS(on) stability over temperature, ultra-low Q_GD (4 nC), reverse recovery charge (Q_r = 125 nC), and TO-247 thermal resistance (R_th(j-mb) = 1.05 K/W).

Technical Context

This GaN FET uses a cascode architecture integrating a GaN HEMT with a silicon MOSFET for robust normally-off operation and gate oxide reliability. Its +4 V gate threshold voltage ensures immunity to gate bounce during high-dV/dt switching events in hard-switched topologies.

The device exhibits minimal reverse recovery (t_rr = 54 ns) and low source-drain diode forward voltage (V_SD = 1.35 V at 12.5 A), enabling efficient bidirectional conduction in synchronous rectification and totem-pole configurations without external body diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V maximum drain-source voltage - supports 400 V DC-link designs with 25% margin for transient spikes.
R_DS(on)	50 mΩ typical at V_GS = 10 V, I_D = 25 A, T_j = 25 °C - enables <1.25 W conduction loss at 5 A RMS.
Q_GD	4 nC gate-drain charge - reduces Miller-induced turn-off delay and improves EMI control in >1 MHz switching.
Q_r	125 nC recovered charge in source-drain diode - lowers switching loss in soft-recovery applications like PFC.
R_th(j-mb)	1.05 K/W junction-to-mounting-base thermal resistance - allows 143 W total dissipation with ≤25 °C temperature rise across heatsink interface.
V_GS(th)	+4 V typical gate threshold - prevents false turn-on during noise coupling and supports stable 0–10 V gate drive.
t_rr	54 ns reverse recovery time - eliminates tail current and associated losses in ZVS/ZCS resonant converters.

Pinout & Package

Package: TO-247 (SOT429), plastic single-ended through-hole, 3-lead, heatsink-mounted, with mounting base electrically connected to source.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal accepting 0–10 V logic-level drive; ±20 V absolute max rating protects against ESD and ringing.
2 (S)	Source	Reference node for gate drive and current return path; tied to mounting base for low-inductance thermal/ground connection.
3 (D)	Drain	High-side power output node; rated for 650 V blocking and 150 A pulsed current under safe operating area limits.
Mounting Base (mb)	Source Terminal / Thermal Interface	Electrically connected to Pin 2 (S); provides primary thermal path to heatsink with 1.05 K/W resistance.

Key Features

Feature	Design Value
Normally-off operation	Enables safe gate drive design without external depletion-mode handling circuitry or bootstrap complexity.
Ultra-low Q_r (125 nC)	Reduces energy loss and voltage overshoot during diode commutation in totem-pole PFC and inverter legs.
Transient over-voltage rating (800 V)	Withstands 15% overvoltage transients without derating, simplifying snubber design in industrial DC-link applications.
Robust gate oxide (±20 V)	Eliminates need for gate clamping Zeners in high-noise motor drive or UPS environments.
Low V_SD (1.35 V @ 12.5 A)	Minimizes conduction loss during reverse conduction mode, critical for bidirectional switch implementations.

Applications

Bridgeless Totem-Pole PFC

PV String Inverters

Use Scenario: High-efficiency AC–DC front-end in server PSUs and telecom rectifiers operating at 100–300 kHz.

IC Role / Device Role / Timing Role: Main switching FET in active clamp or dual-phase totem-pole configuration, handling full line current with zero-current turn-on.

Use Value: 50 mΩ R_DS(on) and 4 nC Q_GD enable >99% efficiency at 3.3 kW while maintaining thermal headroom on standard TO-247 heatsinks.

Use Scenario: DC–AC inversion stage in residential solar string inverters with 600–1000 V DC input.

IC Role / Device Role / Timing Role: High-side switch in three-level NPC or T-type inverter leg, operating with 16 kHz PWM and active neutral-point balancing.

Use Value: 800 V transient rating and 125 nC Q_r allow reliable operation under lightning surge conditions and reduce snubber losses by 35% vs. Si MOSFETs.

UPS Inverters

Servo Motor Drives

Use Scenario: Online double-conversion UPS delivering clean 50/60 Hz sine wave output with <1 ms transfer time.

IC Role / Device Role / Timing Role: Output H-bridge switch managing bidirectional energy flow between battery bank and AC load during grid failure.

Use Value: Low V_SD (1.35 V) and fast t_rr (54 ns) minimize dead-time losses and enable precise sinusoidal current reconstruction at 20 kHz carrier frequency.

Use Scenario: High-bandwidth torque control in industrial servo amplifiers driving permanent magnet synchronous motors (PMSM).

IC Role / Device Role / Timing Role: Phase-leg switch in three-phase inverter, executing field-oriented control (FOC) with 50 kHz PWM and microsecond-level timing resolution.

Use Value: +4 V V_GS(th) and 1.05 K/W R_th(j-mb) ensure stable gate triggering and <85 °C junction temperature under 150 A peak phase current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar GaN power FET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Transphorm TPH3205WS	650 V, 55 mΩ, Q_GD = 5.2 nC, R_th(j-mb) = 1.2 K/W, no integrated driver	Requires external gate driver with negative turn-off bias; higher R_DS(on) increases conduction loss at >10 A	Preferred where gate drive layout allows discrete driver optimization and thermal margin exceeds 10 K/W.
GaN Systems GS66508T	650 V, 45 mΩ, Q_GD = 3.8 nC, R_th(j-mb) = 0.95 K/W, larger 8×8 mm PQFN package	Surface-mount only; requires PCB copper thermal vias and specialized reflow profile; not compatible with TO-247 heatsinks	Select when board space is constrained and thermal management uses multilayer copper planes instead of bolted heatsinks.

Compared with TPH3205WS and GS66508T, GAN063-650WSAQ offers the best trade-off for through-hole industrial systems: lower gate charge than TPH3205WS, superior mechanical compatibility with legacy TO-247 heatsinks versus GS66508T, and tighter V_GS(th) distribution for consistent multi-device paralleling.

Availability

GAN063-650WSAQ is available at Aetrix Electronics and suitable for bridgeless totempole PFC, PV string inverters, and servo motor drives requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from Nexperia's qualified production line.

Supply support for GAN063-650WSAQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for automotive, industrial, and computing markets.

The GAN063-650WSAQ belongs to Nexperia's high-voltage GaN FET product line, engineered specifically for high-frequency, high-efficiency power conversion in industrial and datacom infrastructure where reliability, thermal performance, and gate drive simplicity are critical.

FAQ

What gate drive voltage range is required for reliable operation?

GAN063-650WSAQ operates with a recommended gate drive of 0 V to +10 V, with absolute maximum ratings of ±20 V. Its +4 V typical gate threshold voltage ensures robust immunity to gate bounce, and the ±20 V capability eliminates need for external gate clamps in noisy industrial environments.

How does its reverse conduction performance compare to silicon MOSFETs?

The GAN063-650WSAQ exhibits a source-drain diode forward voltage of 1.35 V at 12.5 A and 25 °C, with 54 ns reverse recovery time and 125 nC recovered charge - significantly lower than typical 2.5–3.5 V V_SD and >100 ns t_rr in 650 V Si MOSFETs, reducing commutation loss and EMI in bidirectional topologies.

Is a snubber circuit mandatory for this device?

A DC-link snubber (20 nF + 4 Ω) is recommended in all applications per Nexperia's application note; a switching-node RC snubber is optional below 14 A load current but advised above that threshold to suppress resonance-induced instability from high-gain GaN switching behavior.

What thermal interface materials are recommended for mounting?

Nexperia specifies direct mounting to an aluminum or copper heatsink using thermally conductive grease or phase-change pad with ≤0.15 mm thickness. Mounting torque must be 0.7–0.8 N·m to maintain 1.05 K/W R_th(j-mb) without damaging the TO-247 leadframe or compromising electrical isolation.

GAN063-650WSAQ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: GaNFET (Cascode Gallium Nitride FET)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 34.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 60mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1000 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 143W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

GAN063-650WSAQ FAQ

1.How can I place an order for GAN063-650WSAQ through Aetrix?

Please submit a Request for Quotation (RFQ) for GAN063-650WSAQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for GAN063-650WSAQ reliable?

The price and inventory of GAN063-650WSAQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for GAN063-650WSAQ is usually 5 days.

3.What payment methods are accepted for GAN063-650WSAQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for GAN063-650WSAQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for GAN063-650WSAQ?

GAN063-650WSAQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your GAN063-650WSAQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for GAN063-650WSAQ?

For technical support, including GAN063-650WSAQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your GAN063-650WSAQ requirements.

6.How does Aetrix verify that GAN063-650WSAQ is sourced from the original manufacturer or authorized distributors?

All GAN063-650WSAQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that GAN063-650WSAQ meets industry standards.

7.What is the process for return or replacement of GAN063-650WSAQ?

All GAN063-650WSAQ units undergo pre-shipment inspection (PSI). If there is an issue with GAN063-650WSAQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The GAN063-650WSAQ part is unused and in its original packaging.

Return procedure for GAN063-650WSAQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…