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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. GAN111-650WSBQ

Name: GAN111-650WSBQ
Brand: Nexperia USA Inc.
SKU: GAN111-650WSBQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: GAN111-650WSBQ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: GAN111-650WSBQ.pdf

Description:: GAN111-650WSB/SOT429/TO-247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

GAN111-650WSB from Nexperia is a 650 V, 97 mΩ normally-off gallium nitride (GaN) power FET in TO-247-3L package, combining high-voltage GaN HEMT and low-voltage silicon MOSFET technologies. It delivers 21 A continuous drain current at 25 °C mounting base temperature, 4.1 V typical gate threshold voltage, and ultra-low 0.8 nC gate-drain charge for high-frequency hard/soft switching in industrial and datacom power converters.

For engineers reviewing the GAN111-650WSB datasheet, GAN111-650WSB pinout, GAN111-650WSB application, or GAN111-650WSB equivalent, this page provides verified technical context, thermal resistance (1.0 K/W junction-to-mounting-base), reverse recovery charge (65 nC), source-drain diode forward voltage (1.8 V @ 14 A), and transient overvoltage capability (725 V) to support fast-switching PFC and resonant DC/DC design.

Technical Context

This GaN FET uses Nexperia's H2 technology to achieve normally-off operation with +4 V gate threshold voltage and ±20 V gate oxide rating-enabling robust 0–12 V gate drive without level-shifting. Its low 97 mΩ R_DS(on) at 10 V_GS and 25 °C, combined with 336 pF input capacitance and 49 pF output capacitance, supports >1 MHz switching in totem-pole PFC and LLC topologies.

The device integrates a monolithic source-drain diode with 18 ns reverse recovery time and 65 nC recovered charge, eliminating external body diode reliance. Thermal performance is defined by 1.0 K/W typical junction-to-mounting-base resistance and 40 K/W junction-to-solder-point resistance, enabling high-power density designs when heatsink-mounted via the source-connected metal base.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V maximum drain-source voltage - defines safe blocking capability in 400 V AC/DC and 800 V DC bus applications
R_DS(on)	97 mΩ typical at V_GS = 10 V, I_D = 14 A, T_j = 25 °C - enables low conduction loss in high-current PFC stages
Q_GD	0.8 nC gate-drain charge - minimizes Miller-induced switching delay and improves dv/dt immunity in high-speed circuits
I_D	21 A continuous drain current at T_mb = 25 °C - supports 1–3 kW power levels with appropriate heatsinking
R_th(j-mb)	1.0 K/W typical thermal resistance junction-to-mounting base - allows direct thermal path to heatsink for stable 175 °C junction operation
V_GS(th)	4.1 V typical gate threshold voltage - ensures strong noise immunity against gate bounce during high-dv/dt switching
Q_r	65 nC source-drain diode recovered charge - reduces turn-on loss and EMI in synchronous rectification and bridgeless configurations

Pinout & Package

Package: TO-247-3L (SOT429-3), plastic single-ended through-hole package with heatsink mounting and source-connected metal base (mb).

Pin/Terminal	Circuit Role	Design Meaning
1	G	Gate terminal - accepts 0–12 V logic-level drive; ±20 V absolute max rating protects against transients
2	S	Source terminal - electrically tied to mounting base (mb); serves as common reference for gate drive and current sensing
3	D	Drain terminal - high-side switching node; rated for 650 V DC and 725 V transient pulses

Key Features

Feature	Design Value
Normally-off operation	Guarantees safe startup and fault tolerance without external bias circuitry
Ultra-low Q_r (65 nC)	Reduces reverse recovery loss and EMI in totem-pole PFC and synchronous rectifier topologies
Robust ±20 V gate oxide	Enables reliable 12 V gate drive with margin against ringing and overshoot in high-dv/dt environments
Low R_DS(on) × Q_G figure of merit	4.9 nC total gate charge with 97 mΩ on-resistance - optimizes tradeoff between switching and conduction losses
Source-drain diode V_SD	1.8 V forward drop at 14 A - supports bidirectional conduction in resonant converters without external diode

Applications

AC/DC Bridgeless Totem-Pole PFC

DC/DC High-Frequency Resonant Converters

Use Scenario: 3.5 kW server PSU using interleaved totem-pole topology with 100–200 kHz switching frequency.

IC Role / Device Role / Timing Role: Primary high-side GaN switch handling line-frequency rectified input and high-frequency PWM commutation.

Use Value: 97 mΩ R_DS(on) and 0.8 nC Q_GD enable >99% efficiency at full load while maintaining <100 ns turn-off delay.

Use Scenario: 1.2 kW telecom DC/DC brick using LLC resonant converter with 700 kHz resonant frequency.

IC Role / Device Role / Timing Role: Upper-leg primary-side switch operating in zero-voltage switching (ZVS) mode with precise dead-time control.

Use Value: 65 nC Q_r and 18 ns t_rr ensure clean ZVS transition and minimal circulating current loss across wide load range.

Solar PV Inverters

Servo Motor Drives

Use Scenario: 5 kW string inverter DC link stage with unidirectional boost conversion and 50 kHz switching.

IC Role / Device Role / Timing Role: High-voltage boost switch managing 1000 V DC bus with fast transient response to irradiance changes.

Use Value: 725 V transient V_DS rating and 1.0 K/W R_th(j-mb) allow reliable operation under lightning surge and thermal cycling stress.

Use Scenario: 7.5 kW industrial servo drive with three-phase inverter stage switching at 20–40 kHz.

IC Role / Device Role / Timing Role: Phase-leg high-side switch delivering precise PWM-controlled motor current with low shoot-through risk.

Use Value: +4.1 V V_GS(th) and ±20 V V_GS rating prevent false turn-on during gate driver noise or ground bounce.

Equivalent & Alternatives

The following parts are listed as comparable options for similar GaN FET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Transphorm TPH3205WS	650 V, 55 mΩ, TO-247-3L; lower R_DS(on) but higher Q_G (6.2 nC) and no integrated source-drain diode	Requires external anti-parallel diode in PFC; better suited for low-R_DS(on)-critical, lower-frequency (<150 kHz) applications	Select when lowest conduction loss dominates over switching loss and diode integration is not required
EPC eGaN FET EPC2218	650 V, 80 mΩ, LGA 5×6 mm; no through-hole option, requires PCB-level thermal management	Not compatible with TO-247 heatsink mounting; limited to surface-mount high-density designs with advanced thermal vias	Select only for space-constrained, high-volume SMT production where board-level thermal design is fully controlled

Compared with TPH3205WS and EPC2218, GAN111-650WSB offers balanced R_DS(on)/Q_G, integrated source-drain diode, and proven TO-247 mechanical reliability-making it optimal for industrial PFC and resonant converter upgrades requiring drop-in GaN replacement with minimal layout change.

Availability

GAN111-650WSB is available at Aetrix Electronics and suitable for AC/DC bridgeless PFC, DC/DC resonant converters, and solar PV inverters requiring stable component supply, long-lifecycle assurance, and traceable GaN FET sourcing.

Supply support for GAN111-650WSB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and computing markets.

The GAN111 series belongs to Nexperia's high-voltage GaN FET product line, engineered specifically for high-efficiency, high-frequency power conversion in datacom, industrial, and renewable energy systems.

FAQ

What gate drive voltage is recommended for GAN111-650WSB?

Nexperia specifies 0 V to +10 V or +12 V gate drive for reliable operation. The device features a +4.1 V typical gate threshold voltage and ±20 V absolute maximum gate-source rating, enabling robust 12 V drive with margin against ringing. A 30 Ω gate resistor is recommended to balance switching speed and oscillation damping.

Does GAN111-650WSB require an external anti-parallel diode?

No. GAN111-650WSB integrates a monolithic source-drain diode with 1.8 V forward voltage at 14 A and 65 nC recovered charge, supporting bidirectional conduction in totem-pole PFC and synchronous rectifier configurations without external diodes.

How is thermal performance validated for TO-247 mounting?

Thermal resistance is specified as 1.0 K/W typical from junction to mounting base (R_th(j-mb)) with the metal base directly attached to a heatsink. This value is measured per JEDEC JESD51-14 and validated using transient dual-interface testing, ensuring accurate prediction of junction temperature under real-world heatsink conditions.

Can GAN111-650WSB replace silicon MOSFETs in existing designs?

Yes-with gate drive and layout review. Its 650 V rating, TO-247-3L footprint, and 0–12 V gate compatibility allow retrofit into many 600 V silicon superjunction MOSFET designs. However, due to faster switching, snubbing (33 pF + 37.5 Ω RC network) and gate ferrite bead (30 Ω @ 100 MHz) are recommended to suppress ringing.

GAN111-650WSBQ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 114mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 4.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 4.9 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 336 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 107W (Ta)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3L

GAN111-650WSBQ FAQ

1.How can I place an order for GAN111-650WSBQ through Aetrix?

Please submit a Request for Quotation (RFQ) for GAN111-650WSBQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for GAN111-650WSBQ reliable?

The price and inventory of GAN111-650WSBQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for GAN111-650WSBQ is usually 5 days.

3.What payment methods are accepted for GAN111-650WSBQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for GAN111-650WSBQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for GAN111-650WSBQ?

GAN111-650WSBQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your GAN111-650WSBQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for GAN111-650WSBQ?

For technical support, including GAN111-650WSBQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your GAN111-650WSBQ requirements.

6.How does Aetrix verify that GAN111-650WSBQ is sourced from the original manufacturer or authorized distributors?

All GAN111-650WSBQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that GAN111-650WSBQ meets industry standards.

7.What is the process for return or replacement of GAN111-650WSBQ?

All GAN111-650WSBQ units undergo pre-shipment inspection (PSI). If there is an issue with GAN111-650WSBQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The GAN111-650WSBQ part is unused and in its original packaging.

Return procedure for GAN111-650WSBQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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