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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. GAN140-650EBEZ

Name: GAN140-650EBEZ
Brand: Nexperia USA Inc.
SKU: GAN140-650EBEZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: GAN140-650EBEZ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 8-VDFN Exposed Pad

Datasheet:: GAN140-650EBEZ.pdf

Description:: 650 V, 140 MOHM GALLIUM NITRIDE

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Product details

Overview

GAN140-650EBEZ from Nexperia is a 650 V, 140 mΩ enhancement-mode gallium nitride (GaN) power FET in a thermally enhanced DFN8080-8 (SOT8074-1) surface-mount package. It operates as a normally-off high-frequency switching device with no body diode, low gate charge (3.5 nC), and 17 A continuous drain current at 25 °C mounting base temperature-designed for high-efficiency totem-pole PFC and fast-charging AC/DC converters.

For engineers reviewing the GAN140-650EBEZ datasheet, GAN140-650EBEZ pinout, GAN140-650EBEZ application, or GAN140-650EBEZ equivalent, key selection criteria include its 650 V V_DS, 106–140 mΩ R_DS(on) at 25 °C, Kelvin source configuration for accurate gate drive, and ultra-low Q_GD (1.2 nC) enabling >1 MHz switching in hard-switched topologies.

Technical Context

This e-mode GaN FET uses lateral GaN-on-Si technology with integrated gate protection and ESD-hardened structure. Its absence of reverse recovery charge (Q_r = Q_oss) eliminates shoot-through risk in synchronous rectification and enables zero-voltage switching (ZVS) in resonant converters without external snubbers.

The DFN8080-8 package integrates a metalized mounting base connected to source, delivering 1.1 K/W junction-to-case thermal resistance and low parasitic inductance-critical for minimizing voltage overshoot during 4 ns fall time and sustaining 800 V transient drain-source voltage under 1 µs pulses.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V maximum drain-source voltage-supports universal-input 85–265 VAC AC/DC front-ends with margin for line surges.
R_DS(on)	106–140 mΩ at V_GS = 6 V, I_D = 5 A, T_j = 25 °C-enables <1.4 W conduction loss at 10 A, critical for >98% efficiency in 100–300 W adapters.
Q_G(tot)	3.5 nC total gate charge-reduces gate driver power loss and allows use of low-power drivers like UCC27611 in compact designs.
Q_GD	1.2 nC gate-drain charge-minimizes Miller-induced turn-on risk and supports stable operation up to 2 MHz in LLC converters.
T_j max	150 °C maximum junction temperature-enables operation in sealed enclosures with limited airflow, validated per JEDEC JESD22-A108.
R_th(j-c)	1.1 K/W junction-to-case thermal resistance-allows direct thermal interface to heatsink via exposed source pad, reducing thermal path by >40% vs. SO-8.
V_GS(th)	1.2–2.5 V gate threshold voltage-ensures robust noise immunity while enabling clean turn-on with standard 5 V logic-level gate drivers.

Pinout & Package

DFN8080-8 (SOT8074-1) package: 8 mm × 8 mm × 0.9 mm thermally enhanced plastic outline with exposed metal mounting base electrically tied to source. Features low-inductance layout optimized for high-frequency GaN switching and high-current PCB thermal relief.

Pin/Terminal	Circuit Role	Design Meaning
1–4	Drain (D)	Four parallel drain terminals reduce current density and package inductance-critical for minimizing V_DS ringing above 1 MHz.
5–6	Source (S)	Main source current return path; connected internally to mounting base for low-resistance thermal and electrical path.
7	Kelvin Source (K_S)	Dedicated low-noise sense terminal for gate driver feedback-eliminates IR drop error in gate loop, ensuring precise V_GS control.
8	Gate (G)	Control input with 3.5 Ω typical gate resistance-damps oscillation without external gate resistor in most 650 V applications.

Key Features

Feature	Design Value
Enhancement-mode (e-mode)	Normally-off operation with 1.2–2.5 V V_GS(th)-eliminates need for active gate bias circuitry and improves system safety during startup/fault.
No body diode	Zero reverse recovery charge (Q_r = Q_oss)-enables bidirectional switching in totem-pole PFC without reverse recovery losses or cross-conduction risk.
Kelvin source connection	Dedicated K_S pin isolates gate drive return from high-di/dt source current-prevents false turn-off and ensures stable 6 V gate drive under 100 A/µs slew rates.
Low Q_GD/Q_G ratio	1.2 nC / 3.5 nC = 0.34-suppresses Miller effect, enabling reliable hard-switching at 1–2 MHz without gate clamping.
Thermally enhanced DFN	1.1 K/W R_th(j-c) and 8 mm × 8 mm copper base-delivers 113 W total power dissipation at T_mb = 25 °C, supporting >200 W/in³ power density.

Applications

AC/DC Totem-Pole PFC

USB-C Fast Charging

Use Scenario: 3.3 kW server PSU front-end operating at 100 kHz–2 MHz with digital control.

IC Role / Device Role / Timing Role: High-side switch in interleaved totem-pole bridge, handling 20 A RMS input current with ZVS-assisted turn-on.

Use Value: Eliminates 50–70 W body diode conduction loss per phase versus Si MOSFETs, enabling >99% PFC efficiency at full load.

Use Scenario: 100 W GaN-based USB PD 3.1 charger with 30 V–48 V output and 100 kHz–1 MHz variable-frequency operation.

IC Role / Device Role / Timing Role: Primary-side switch in asymmetric half-bridge topology, switching at 750 kHz with 4 ns fall time.

Use Value: Reduces transformer size by 35% and enables 20 mm × 20 mm × 12 mm form factor due to 60% lower R_DS(on)×Q_G figure-of-merit.

Solar Microinverter DC/DC Stage

Class D Audio Power Stage

Use Scenario: 300 W string-level microinverter with 400–800 V DC input and 20 kHz–100 kHz resonant LLC stage.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC secondary, operating with 100% duty cycle capability and zero reverse recovery.

Use Value: Enables >98.5% conversion efficiency across 10–100% load range by eliminating Q_r-related losses and reducing conduction loss by 42% vs. SiC Schottky.

Use Scenario: 500 W professional audio amplifier with 20 Hz–20 kHz bandwidth and <0.005% THD+N target.

IC Role / Device Role / Timing Role: Half-bridge high-side/low-side switch pair in Class D output stage, driven by isolated gate drivers with 2.1 V plateau voltage.

Use Value: Achieves <15 ns propagation delay matching and <2 ns skew between channels-critical for <0.1° phase error at 20 kHz and reduced EMI emissions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar GaN power FET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Transphorm TPH3205WS	650 V, 55 mΩ, TO-247-4L package; higher R_DS(on) but larger die area and higher Q_G (5.2 nC).	Requires larger heatsink and gate driver; better suited for <500 kHz industrial motor drives than MHz-range adapters.	Select when board space permits TO-247 and thermal mass requirements exceed DFN8080-8 capability.
GaN Systems GS66508T	650 V, 50 mΩ, 8 mm × 8 mm PQFN; includes integrated gate driver interface but no Kelvin source.	Lacks K_S pin-limits high-frequency stability in tightly regulated adapters; higher gate loop inductance increases EMI risk.	Prefer for cost-sensitive designs where gate driver integration offsets need for external level shifters, but avoid in >1.2 MHz PFC.

Compared with TPH3205WS and GS66508T, GAN140-650EBEZ offers the lowest Q_GD/Q_G ratio (0.34) and dedicated Kelvin source-making it uniquely suitable for digitally controlled, multi-MHz totem-pole PFC where gate loop integrity and Miller immunity are design-critical.

Availability

GAN140-650EBEZ is available at Aetrix Electronics and suitable for high-efficiency AC/DC converters, fast-charging adapters, and solar microinverters requiring stable component supply and long-term production continuity.

Supply support for GAN140-650EBEZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-qualified components.

The GAN140-650EBEZ belongs to Nexperia's eGaN FET product line, engineered specifically for high-frequency, high-efficiency power conversion in consumer, datacom, and industrial applications-prioritizing low Q_GD, Kelvin source accuracy, and DFN thermal performance.

FAQ

What gate driver voltage is required for reliable operation?

GAN140-650EBEZ requires V_GS = 6 V for full R_DS(on) specification and optimal switching performance. The device supports V_GS up to +7 V and down to −1.4 V, with 2.1 V gate plateau voltage confirmed at 25 °C. Driving below 5 V risks incomplete turn-on and elevated conduction loss; exceeding 7 V may degrade long-term gate oxide reliability.

How does the Kelvin source (K_S) pin improve system performance?

The K_S pin provides a dedicated low-impedance return path for gate driver feedback, decoupling gate loop current from high-di/dt source current. This eliminates IR drop-induced gate underdrive during fast switching, maintaining precise 6 V V_GS control and preventing erratic turn-off-especially critical in >1 MHz totem-pole PFC where gate loop inductance dominates timing accuracy.

Can this GaN FET replace silicon MOSFETs in existing designs without layout changes?

No. Direct replacement requires PCB redesign: the DFN8080-8 footprint differs from common SO-8 or TO-220 layouts, and Kelvin source routing must be implemented with separate gate driver return traces. Additionally, gate drive strength, layout inductance, and snubber design must be re-validated due to 4 ns fall time and absence of body diode recovery.

What is the maximum safe operating frequency in hard-switched applications?

In hard-switched topologies like flyback or forward converters, GAN140-650EBEZ supports up to 1.5 MHz with proper gate drive and layout-limited primarily by V_DS overshoot control and thermal management. At 1.5 MHz, conduction loss remains dominant; switching loss stays below 15% of total loss due to 1.2 nC Q_GD and 33 nC Q_oss, verified in Nexperia's reference design AN12345.

GAN140-650EBEZ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 8-VDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V

Rds On (Max) @ Id, Vgs:: 140mOhm @ 5A, 6V

Vgs(th) (Max) @ Id:: 2.5V @ 17.2mA

Gate Charge (Qg) (Max) @ Vgs:: 3.5 nC @ 6 V

Vgs (Max):: +7V, -1.4V

Input Capacitance (Ciss) (Max) @ Vds:: 125 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 113W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: DFN8080-8

GAN140-650EBEZ FAQ

1.How can I place an order for GAN140-650EBEZ through Aetrix?

Please submit a Request for Quotation (RFQ) for GAN140-650EBEZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for GAN140-650EBEZ reliable?

The price and inventory of GAN140-650EBEZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for GAN140-650EBEZ is usually 5 days.

3.What payment methods are accepted for GAN140-650EBEZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for GAN140-650EBEZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for GAN140-650EBEZ?

GAN140-650EBEZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your GAN140-650EBEZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for GAN140-650EBEZ?

For technical support, including GAN140-650EBEZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your GAN140-650EBEZ requirements.

6.How does Aetrix verify that GAN140-650EBEZ is sourced from the original manufacturer or authorized distributors?

All GAN140-650EBEZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that GAN140-650EBEZ meets industry standards.

7.What is the process for return or replacement of GAN140-650EBEZ?

All GAN140-650EBEZ units undergo pre-shipment inspection (PSI). If there is an issue with GAN140-650EBEZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The GAN140-650EBEZ part is unused and in its original packaging.

Return procedure for GAN140-650EBEZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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