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Nexperia USA Inc. GAN140-650FBEZ
- Part No.:
- GAN140-650FBEZ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
GAN140-650FBEZ.pdf
- Description:
- 650 V, 140 MOHM GALLIUM NITRIDE
- Quantity:
- Payment:
- Shipping:
Inventory:2,327
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Product details
Overview
GAN140-650FBEZ from Nexperia is a 650 V, 140 mΩ enhancement-mode gallium nitride (GaN) power FET in a thermally enhanced DFN5060-5 (SOT8075-1) surface-mount package. It operates as a normally-off high-frequency switching device with no body diode, low gate charge (3.5 nC), and 17 A continuous drain current at Tmb = 25 °C-enabling high-efficiency totem-pole PFC and fast-charging USB-C power adapters.
For engineers reviewing the GAN140-650FBEZ datasheet, GAN140-650FBEZ pinout, GAN140-650FBEZ application, or GAN140-650FBEZ equivalent, key selection criteria include its 1.1 K/W junction-to-case thermal resistance, Kelvin source terminal for accurate gate drive referencing, ultra-low QGD (1.2 nC), absence of reverse recovery charge, and suitability for >1 MHz switching in DC-DC converters and solar inverters.
Technical Context
This e-mode GaN FET uses lateral GaN-on-Si technology with integrated gate protection and ESD hardening. Its gate threshold voltage (VGS(th)) ranges from 1.2 V to 2.5 V at 25 °C and remains stable up to 150 °C, enabling robust turn-on control across temperature. The device lacks a parasitic body diode, eliminating reverse recovery losses and enabling zero-voltage switching (ZVS) topologies.
It features a dedicated Kelvin source (Pin 7) separate from main source terminals (Pins 5–6), allowing precise gate-source voltage sensing independent of high-current source loop inductance. Drain-source on-resistance increases from 106 mΩ at 25 °C to 230 mΩ at 150 °C, reflecting predictable RDS(on) temperature coefficient critical for thermal design.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 650 V maximum drain-source blocking voltage - supports universal AC input (90–265 VAC) rectified to ~375–400 VDC bus in PFC stages. |
| RDS(on) | 106 mΩ typical at VGS = 6 V, ID = 5 A, Tj = 25 °C - enables low conduction loss in high-current, high-frequency SMPS designs. |
| QG(tot) | 3.5 nC total gate charge - reduces gate driver power requirement and enables efficient operation above 1 MHz switching frequency. |
| QGD | 1.2 nC gate-drain charge - minimizes Miller effect, improving dv/dt immunity and reducing switching transition time. |
| Rth(j-c) | 1.1 K/W junction-to-case thermal resistance - allows direct mounting to heatsink or PCB copper, supporting >100 W power dissipation in compact layouts. |
| VGS(th) | 1.2–2.5 V threshold voltage - ensures reliable turn-off under noise and provides margin against spurious turn-on during high dv/dt events. |
| ID | 17 A continuous drain current at Tmb = 25 °C - rated for sustained high-current operation in server PSUs and telecom rectifiers. |
Pinout & Package
DFN5060-5 (SOT8075-1) package: 5 mm × 6 mm × 0.9 mm thermally enhanced plastic outline with exposed mounting base connected to source. Features 8 terminals including dual drain pads, dual source pads, Kelvin source, and gate.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–4 | Drain | Main high-side current path; all four pins electrically tied to internal drain metallization for low-inductance, high-current conduction. |
| 5–6 | Source | Power return path for main current; connected to mounting base for thermal conduction and low-impedance grounding. |
| 7 | Kelvin Source | Reference node for gate driver feedback; isolated from high-current source loop to eliminate IR drop error in gate voltage control. |
| 8 | Gate | Control input for enhancement-mode turn-on; requires 6 V drive for full RDS(on) performance and stable operation. |
Key Features
| Feature | Design Value |
|---|---|
| Enhancement-mode (e-mode) | Normally-off operation eliminates need for external bias circuitry and improves system safety during startup/fault conditions. |
| No body diode | Zero reverse recovery charge (Qrr = 0) enables true ZVS and eliminates associated switching losses and EMI in resonant topologies. |
| Low package inductance | DFN5060-5 layout with multiple parallel drain/source pads minimizes loop inductance, supporting clean >100 V/ns dv/dt transitions. |
| ESD protection | HBM rating ≥2 kV per JEDEC JS-001 - protects gate oxide during handling and board assembly without requiring additional external clamping. |
| RoHS, REACH, Pb-free | Compliant with global environmental regulations and compatible with standard lead-free reflow profiles (peak 260 °C). |
Applications
| AC-DC Totem Pole PFC | USB-C Fast Charging |
|---|---|
Use Scenario: High-density 3.3 kW server PSU front-end using interleaved totem pole topology with digital control. IC Role / Device Role / Timing Role: High-side GaN switch operating at 200–500 kHz with synchronous rectification on low-side. Use Value: Enables >98.5% efficiency at full load by eliminating body diode conduction loss and reducing switching energy via low QGD and QOSS. |
Use Scenario: 100 W GaN-based USB PD 3.1 charger with variable output (5–48 V) and programmable power supply (PPS). IC Role / Device Role / Timing Role: Primary-side switching FET in asymmetrical half-bridge LLC resonant converter. Use Value: Supports 1 MHz+ operation with minimal gate drive loss, enabling 50% smaller magnetics and <15 mm profile while maintaining thermal headroom. |
| Solar Microinverter | Class D Audio Amplifier |
Use Scenario: Single-phase 300–500 W microinverter converting PV panel DC output to grid-synchronized 230 VAC. IC Role / Device Role / Timing Role: Bridge-leg switch in H-bridge inverter stage with unipolar PWM modulation. Use Value: Delivers >96% peak conversion efficiency and meets EN 62109 safety standards due to inherent normally-off behavior and low leakage (<0.6 µA at 650 V). |
Use Scenario: 200 W stereo Class D amplifier for premium soundbars with THD+N <0.01% at 1 kHz. IC Role / Device Role / Timing Role: Output stage half-bridge switch operating at 300–600 kHz carrier frequency. Use Value: Reduces audible switching noise and improves audio fidelity by minimizing dead-time distortion and eliminating body diode crossover artifacts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar GaN FET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Transphorm TPH3205WS | 650 V, 55 mΩ, TO-247-3L package; higher RDS(on), larger footprint, no Kelvin source. | Requires external gate driver with negative turn-off bias; less suitable for ultra-high-frequency (>1 MHz) designs due to higher QG (6.2 nC). | Select when higher current rating (25 A) and through-hole mounting are prioritized over board space and switching speed. |
| GaN Systems GS66508T | 650 V, 50 mΩ, 5×6 mm DFN with Kelvin source; lower RDS(on) but higher QG(tot) (5.8 nC) and QGD (2.1 nC). | Higher gate charge increases driver complexity and limits practical switching frequency to ~750 kHz in high-power designs. | Select when lower conduction loss dominates system efficiency trade-off and thermal management permits higher Rth(j-c) (1.5 K/W). |
Compared with TPH3205WS and GS66508T, GAN140-650FBEZ offers the lowest QGD/RDS(on) ratio (11.3 nC/Ω) among 650 V GaN FETs in 5×6 mm DFN, making it optimal for MHz-class resonant converters where switching loss dominates.
Availability
GAN140-650FBEZ is available at Aetrix Electronics and suitable for high-efficiency AC-DC power supplies, fast-charging adapters, and solar microinverters requiring stable component supply and long-term production continuity.
Supply support for GAN140-650FBEZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a leading semiconductor manufacturer headquartered in Nijmegen, Netherlands, specializing in high-performance analog, logic, discrete, and GaN power devices with focus on reliability and energy efficiency.
The GAN140-650FBEZ belongs to Nexperia's high-voltage GaN FET product line, designed specifically for next-generation power conversion systems demanding high frequency, high density, and zero-recovery-loss operation.
FAQ
What gate drive voltage is required for full enhancement?
GAN140-650FBEZ requires a minimum gate-source voltage of 6 V to achieve its specified RDS(on) of 106 mΩ at 25 °C. Gate drive must remain within −1.4 V to +7 V absolute limits; exceeding +7 V risks gate oxide damage. A 6 V ±0.5 V drive is recommended for stable conduction and noise immunity.
Does this GaN FET require a negative turn-off voltage?
No. As an enhancement-mode device, GAN140-650FBEZ turns off fully at VGS = 0 V and has no requirement for negative gate bias. Its VGS(th) of 1.2–2.5 V provides sufficient margin against spurious turn-on, even under high dv/dt conditions common in hard-switched topologies.
How is thermal performance affected by PCB layout?
Thermal resistance Rth(j-c) = 1.1 K/W assumes direct thermal coupling between the exposed mounting base (connected to source) and a 25 mm² copper pad with ≥2 oz thickness and ≥4 thermal vias to inner ground planes. Reducing copper area or omitting vias increases effective Rth(j-a) beyond the datasheet's 60.3 K/W baseline.
Can the Kelvin source pin be left unconnected?
No. Leaving Pin 7 (Kelvin source) unconnected degrades gate drive accuracy and can cause unstable switching or overvoltage stress. It must be routed separately-without high-current traces-to the gate driver's source reference node to maintain precise VGS control and prevent false turn-on from source inductance voltage drop.
GAN140-650FBEZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V
- Rds On (Max) @ Id, Vgs:
- 140mOhm @ 5A, 6V
- Vgs(th) (Max) @ Id:
- 2.5V @ 17.2mA
- Gate Charge (Qg) (Max) @ Vgs:
- 3.5 nC @ 6 V
- Vgs (Max):
- +7V, -1.4V
- Input Capacitance (Ciss) (Max) @ Vds:
- 125 pF @ 400 V
- FET Feature:
- -
- Power Dissipation (Max):
- 113W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- DFN5060-5
GAN140-650FBEZ FAQ
1.How can I place an order for GAN140-650FBEZ through Aetrix?
Please submit a Request for Quotation (RFQ) for GAN140-650FBEZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for GAN140-650FBEZ reliable?
The price and inventory of GAN140-650FBEZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for GAN140-650FBEZ is usually 5 days.
3.What payment methods are accepted for GAN140-650FBEZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for GAN140-650FBEZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for GAN140-650FBEZ?
GAN140-650FBEZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your GAN140-650FBEZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for GAN140-650FBEZ?
For technical support, including GAN140-650FBEZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your GAN140-650FBEZ requirements.
6.How does Aetrix verify that GAN140-650FBEZ is sourced from the original manufacturer or authorized distributors?
All GAN140-650FBEZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that GAN140-650FBEZ meets industry standards.
7.What is the process for return or replacement of GAN140-650FBEZ?
All GAN140-650FBEZ units undergo pre-shipment inspection (PSI). If there is an issue with GAN140-650FBEZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The GAN140-650FBEZ part is unused and in its original packaging.
Return procedure for GAN140-650FBEZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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