Nexperia USA Inc. GANB4R8-040CBAZ

Overview

GANB4R8-040CBAZ from Nexperia is a 40 V, 4.8 mΩ bi-directional enhancement-mode GaN HEMT in a 2.1 mm × 2.1 mm WLCSP package, designed as a normally-off power switch for high-efficiency load switching and overvoltage protection. It delivers 20 A continuous drain current at 25 °C, 13 W total power dissipation, and ultra-low gate charge (15.8 nC), enabling high-frequency operation in compact USB power delivery and standby systems.

For engineers reviewing the GANB4R8-040CBAZ datasheet, GANB4R8-040CBAZ pinout, GANB4R8-040CBAZ application, or GANB4R8-040CBAZ equivalent, this page provides verified package mapping, bidirectional terminal behavior, thermal resistance (7.6 K/W j-to-mb), on-resistance temperature coefficient, and real-world use cases in smartphone USB OVP and high-side load switching circuits.

Technical Context

This GaN FET uses a symmetrical D1/D2 architecture with no intrinsic body diode, supporting true bidirectional conduction without reverse recovery losses. Its e-mode operation ensures safe default-off behavior, while gate-drain threshold voltage (1.35 V typ at 25 °C) and low gate resistance (4 Ω) enable fast, low-loss switching up to MHz-range frequencies.

The device operates across –40 °C to 125 °C junction temperature, with drain-drain breakdown voltage rated at 40 V and drain leakage under 20 µA at 40 V/25 °C. Its WLCSP22_SOT8086 package integrates 22 solder balls, including five dedicated to each drain (D1/D2) and one gate (G), with C1 designated NC.

Key Specifications

Pinout & Package

Package: WLCSP22_SOT8086, 2.1 mm × 2.1 mm wafer-level chip-scale package with 22 solder balls, 0.4 mm pitch, and top-side die exposure for thermal performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar bi-directional GaN switch applications.

Compared with TPH3205WS and EPC2065, GANB4R8-040CBAZ uniquely combines RoHS compliance, 2.1 mm × 2.1 mm WLCSP size, and verified 20 A continuous rating in smartphone-grade thermal environments - making it the only option qualified for volume production in USB-C power delivery ICs.

Availability

GANB4R8-040CBAZ is available at Aetrix Electronics and suitable for high-side load switching, smartphone USB overvoltage protection, and stand-by power system designs requiring stable component supply, consistent WLCSP22 packaging, and guaranteed GaN performance across –40 °C to 125 °C.

Supply support for GANB4R8-040CBAZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-performance, reliable standard-logic and power devices, serving automotive, industrial, and consumer markets with scalable manufacturing and rigorous quality systems.

The GANB4R8-040CBAZ belongs to Nexperia's GaN FET product line, engineered specifically for compact, high-efficiency bidirectional power switching in battery-powered and USB-C ecosystems - prioritizing low R_DDon, minimal gate charge, and WLCSP thermal performance.

FAQ

What is the maximum continuous drain current for GANB4R8-040CBAZ?

The maximum continuous drain current is 20 A at mounting base temperature (T_mb) of 25 °C, limited by solder ball thermal capacity rather than silicon capability. At 100 °C T_mb, derated current drops to approximately 12 A per Fig. 1's normalized power dissipation curve.

Can GANB4R8-040CBAZ replace a conventional N-channel MOSFET in a high-side switch?

Yes - its e-mode operation provides inherent normally-off behavior, eliminating the need for level-shifting gate drivers. Unlike silicon MOSFETs, it requires no external body diode due to symmetrical bidirectional conduction, simplifying layout and reducing component count in high-side load switches.

Is the WLCSP22_SOT8086 package compatible with standard reflow profiles?

Yes - the package is qualified for lead-free reflow per J-STD-020, with peak soldering temperature up to 260 °C. Recommended stencil thickness is 0.08 mm, and solder land diameter is 0.315 mm per Fig. 20 and section 12 of the datasheet.

How does bidirectional operation affect gate drive design?

Gate drive remains referenced to whichever terminal serves as source in a given half-cycle - no polarity reversal needed. The gate-drain threshold (V_GD(th)) is defined relative to the higher-potential terminal, so standard 0–5 V gate drivers suffice regardless of current direction.