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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. GANE3R9-150QBAZ

Name: GANE3R9-150QBAZ
Brand: Nexperia USA Inc.
SKU: GANE3R9-150QBAZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: GANE3R9-150QBAZ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 25-PowerVFQFN

Datasheet:: GANE3R9-150QBAZ.pdf

Description:: GANE3R9-150QBA/SOT8091/VQFN7

Quantity:: RFQ Add To RFQ list

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Product details

Overview

GANE3R9-150QBA from Nexperia is a 150 V, 3.9 mΩ enhancement-mode gallium nitride (GaN) power FET in a VQFN7 (SOT8091-1) package. It serves as a high-frequency, normally-off switching device with no body diode, ultra-low R_DS(on), and 20 nC total gate charge-enabling high-efficiency AC/DC and DC/DC conversion in compact USB-C chargers and 48 V telecom systems.

For engineers reviewing the GANE3R9-150QBA datasheet, GANE3R9-150QBA pinout, GANE3R9-150QBA application, or GANE3R9-150QBA equivalent, this page delivers verified electrical specs, thermal resistance (R_th(j-mb) = 1.92 K/W), gate plateau voltage (2 V), and real-world use context for fast-switching GaN design validation.

Technical Context

This e-mode GaN FET operates with zero reverse recovery charge (Q_r = Q_oss only) due to absence of minority carriers and intrinsic body diode. Its gate threshold voltage (V_GS(th)) ranges from 0.8 V to 2.1 V at 25 °C and drops to 1 V at 150 °C, enabling stable turn-on control across temperature.

The device features low dynamic capacitances-C_iss = 2200 pF, C_oss = 900 pF, C_rss = 10.5 pF-and supports ultra-high-frequency switching up to MHz-range operation while maintaining 100 A continuous drain current (T_mb = 25 °C) and 260 A pulsed capability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V maximum - defines safe blocking voltage in high-side switch or synchronous rectifier positions
R_DS(on)	3.2–3.9 mΩ at 25 °C - enables <1 W conduction loss at 30 A, critical for >98% efficiency in 48 V DC/DC converters
Q_G(tot)	20 nC - reduces gate drive power and allows simpler, lower-current gate drivers in MHz-class topologies
Q_GD	3.5 nC - minimizes Miller-induced shoot-through risk during hard switching in half-bridge configurations
R_th(j-mb)	1.92 K/W - supports direct thermal coupling to PCB copper pads, eliminating need for external heatsinks in ≤65 W designs
V_GS(th)	0.8–2.1 V at 25 °C - ensures robust noise immunity and predictable turn-on without overdriving gate
I_D	100 A continuous (T_mb = 25 °C) - sustains high-power density in compact charger and server PSU secondary-side designs

Pinout & Package

VQFN7 package (SOT8091-1), 4.0 mm × 6.0 mm footprint, 0.95 mm max height, with exposed thermal pad on underside for PCB-level heat dissipation.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 25	G (Gate)	Control input; requires 5 V drive for full enhancement; low 1.9 Ω gate resistance enables fast edge rates
3–7, 9, 11, 21, 23	S (Source)	Power return node; multiple parallel pins reduce source inductance and improve switching stability
8, 10, 12–20, 22, 24	D (Drain)	High-voltage power path; distributed pins minimize current crowding and thermal hotspots under 100 A load

Key Features

Feature	Design Value
No body diode	Eliminates reverse recovery losses and associated EMI-critical for ZVS/ZCS resonant topologies
Enhancement mode (normally-off)	Guarantees fail-safe operation without external bias circuitry; simplifies gate driver design
Ultra-thin VQFN7 package	0.95 mm profile enables ultra-low-profile power modules and space-constrained mobile charger PCBs
Low Q_oss (130 nC)	Reduces turn-off energy loss and improves light-load efficiency in high-frequency flyback and LLC converters
RoHS, Pb-free, REACH-compliant	Meets global environmental compliance requirements for industrial, telecom, and consumer end equipment

Applications

USB-C Fast Charging

48 V Telecom DC/DC

Use Scenario: 100 W+ USB PD 3.1 chargers with dual-phase interleaved flyback or active clamp forward topology.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 500 kHz–1 MHz, handling 30–50 A peak drain current.

Use Value: 3.9 mΩ R_DS(on) and 20 nC Q_G enable >96% efficiency at full load while reducing transformer size by 30% vs silicon MOSFETs.

Use Scenario: Intermediate bus converter (IBC) in datacom servers converting 48 V to 12 V with >1 kW/L power density.

IC Role / Device Role / Timing Role: Synchronous rectifier in phase-shifted full-bridge, switching at 300–600 kHz with zero-voltage turn-on.

Use Value: Absence of body diode eliminates reverse recovery loss, improving light-load efficiency by 2–3% and reducing output filter capacitor stress.

LiDAR Power Supply

Class D Audio Amplifier

Use Scenario: High-voltage pulse generator for non-automotive LiDAR systems requiring 100–150 V, 100 ns rise-time pulses.

IC Role / Device Role / Timing Role: Fast-switching high-side switch in gated oscillator or resonant pulse driver stage.

Use Value: 260 A pulsed current rating and 3.5 nC Q_GD support sub-100 ns switching transitions with minimal gate drive overhead.

Use Scenario: Output stage in high-fidelity, multi-kW Class D amplifiers for professional audio and studio monitors.

IC Role / Device Role / Timing Role: Half-bridge leg switch operating at 300–500 kHz with tight dead-time control.

Use Value: Low C_rss (10.5 pF) and flat R_DS(on) vs. temperature ensure consistent gain linearity and reduced THD+N across thermal range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar GaN FET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
TI LMG3425R030	150 V, 30 mΩ, TO-220-7 package; integrated driver and protection; higher R_DS(on), larger footprint	Targeted at industrial motor drives with built-in fault reporting; not optimized for ultra-compact USB-C designs	Choose when system-level integration (driver + protection) outweighs board space and efficiency goals
Transphorm TPH3205WS	100 V, 5.5 mΩ, PQFN 5×6 mm; lower voltage rating but lower Q_G (12 nC); no integrated gate resistor	Better suited for 24–48 V DC/DC where 100 V blocking suffices; limited to sub-100 W high-frequency applications	Prefer for cost-sensitive 48 V systems where 150 V margin is unnecessary and gate drive simplicity is critical

Compared with LMG3425R030 and TPH3205WS, GANE3R9-150QBA delivers the lowest R_DS(on) in its class with VQFN7 packaging-making it optimal for space-constrained, high-efficiency 150 V switching where discrete gate drive and thermal management are already established.

Availability

GANE3R9-150QBA is available at Aetrix Electronics and suitable for USB-C fast charging, 48 V telecom DC/DC converters, and LiDAR pulse generators requiring stable component supply, RoHS-compliant sourcing, and production-ready lead times.

Supply support for GANE3R9-150QBA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, discrete, and MOSFET solutions, with manufacturing rooted in process technology leadership and automotive-grade quality systems.

GANE3R9-150QBA belongs to Nexperia's GaN FET product line, engineered specifically for high-frequency, high-efficiency power conversion in consumer, telecom, and industrial applications-emphasizing low-loss switching, thermal performance, and manufacturability in standard SMT processes.

FAQ

What gate drive voltage is required for full enhancement?

The GANE3R9-150QBA is specified for full enhancement at V_GS = 5 V, delivering 3.2–3.9 mΩ R_DS(on) at 30 A and 25 °C. Gate drive must remain within −4 V to +6 V absolute limits; exceeding +6 V risks permanent gate oxide damage. A 5 V rail with low-inductance layout is recommended for optimal switching performance and reliability.

Does this GaN FET require a negative gate turn-off voltage?

No. The GANE3R9-150QBA does not require negative gate voltage for reliable turn-off. Its enhancement-mode structure ensures natural cutoff at V_GS = 0 V, and gate leakage remains below 100 µA at −4 V. A simple 0 V to 5 V gate drive suffices-eliminating need for level-shifting or negative bias circuits in most topologies.

How is thermal performance validated in the VQFN7 package?

Thermal resistance is measured per JEDEC JESD51-14: R_th(j-mb) = 1.92 K/W is derived from junction-to-mounting-base testing using a standardized 1-inch² copper pad on FR4. This value reflects real-world PCB thermal coupling-not theoretical die-only metrics-enabling accurate thermal modeling for 65 W continuous operation without external heatsinks.

Can this part replace silicon MOSFETs in existing designs without layout changes?

Direct replacement is possible only if the PCB footprint matches SOT8091-1 (VQFN7), gate drive supports 5 V logic, and layout accommodates lower gate charge (20 nC vs typical 50+ nC for silicon). However, reduced parasitic inductance and tighter dead-time control are required to exploit GaN's speed advantage-so minor layout optimization is strongly advised for full benefit.

GANE3R9-150QBAZ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 25-PowerVFQFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 5V

Rds On (Max) @ Id, Vgs:: 3.9mOhm @ 30A, 5V

Vgs(th) (Max) @ Id:: 2.1V @ 12mA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 5 V

Vgs (Max):: +6V, -4V

Input Capacitance (Ciss) (Max) @ Vds:: 2200 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 65W (Ta)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 25-VQFN (4x6)

GANE3R9-150QBAZ FAQ

1.How can I place an order for GANE3R9-150QBAZ through Aetrix?

Please submit a Request for Quotation (RFQ) for GANE3R9-150QBAZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for GANE3R9-150QBAZ reliable?

The price and inventory of GANE3R9-150QBAZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for GANE3R9-150QBAZ is usually 5 days.

3.What payment methods are accepted for GANE3R9-150QBAZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for GANE3R9-150QBAZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for GANE3R9-150QBAZ?

GANE3R9-150QBAZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your GANE3R9-150QBAZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for GANE3R9-150QBAZ?

For technical support, including GANE3R9-150QBAZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your GANE3R9-150QBAZ requirements.

6.How does Aetrix verify that GANE3R9-150QBAZ is sourced from the original manufacturer or authorized distributors?

All GANE3R9-150QBAZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that GANE3R9-150QBAZ meets industry standards.

7.What is the process for return or replacement of GANE3R9-150QBAZ?

All GANE3R9-150QBAZ units undergo pre-shipment inspection (PSI). If there is an issue with GANE3R9-150QBAZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The GANE3R9-150QBAZ part is unused and in its original packaging.

Return procedure for GANE3R9-150QBAZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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