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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas H5N2007FN-E

Name: H5N2007FN-E
Brand: Renesas
SKU: H5N2007FN-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: H5N2007FN-E

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: H5N2007FN-E.pdf

Description:: N-CHANNEL POWER MOSFET

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Product details

Overview

H5N2007FN-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters, motor drives, and industrial power supplies. It features 200 V V_DSS, 25 A continuous drain current, 0.036 Ω typical R_DS(on) at V_GS = 10 V, and TO-220FN package with isolated tab. Its low gate charge (56 nC) and fast switching (t_d(on) = 35 ns, t_f = 85 ns) support efficient hard-switched topologies.

For engineers reviewing the H5N2007FN-E datasheet, H5N2007FN-E pinout, H5N2007FN-E application, or H5N2007FN-E equivalent, key selection criteria include avalanche energy rating (5.4 mJ), body-diode reverse recovery time (140 ns), thermal impedance (4.17 °C/W), and gate threshold voltage range (3.0–4.0 V) under high-temperature operation.

Technical Context

This MOSFET employs planar vertical DMOS architecture optimized for ruggedness and repetitive avalanche capability. Its gate structure enables stable turn-on/turn-off behavior with minimal Miller plateau effects, supported by low Crss (54 pF) and Ciss/Coss ratio of ~5.4:1.

The device integrates an intrinsic body diode with forward voltage of 0.9 V at 25 A and controlled reverse recovery (Q_rr = 0.7 µC), making it suitable for synchronous rectification and freewheeling paths where diode conduction is unavoidable. Thermal design must account for channel-to-case impedance of 4.17 °C/W and maximum T_ch = 150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - Maximum blocking voltage before avalanche onset; defines usable input voltage range in buck/boost stages.
R_DS(on)	0.036 Ω (typ) at V_GS = 10 V - Determines I²R conduction loss at 25 A: ~22.5 W worst-case, requiring heatsinking.
Q_g	56 nC - Gate drive energy requirement; dictates driver strength needed for <100 ns switching transitions.
t_r/t_f	120 ns / 85 ns - Rise/fall times at R_g = 10 Ω; sets minimum practical PWM frequency and EMI profile.
E_AR	5.4 mJ - Single-pulse avalanche energy rating; enables robustness against inductive switching transients without external snubbers.
V_GS(off)	3.0–4.0 V - Threshold voltage window; ensures reliable turn-on margin above 5 V logic while avoiding spurious conduction near 3.3 V.
θ_ch-c	4.17 °C/W - Channel-to-case thermal resistance; used with P_ch = 30 W to calculate case temperature rise under DC load.

Pinout & Package

Package: TO-220FN (isolated tab, EIAJ standard). Features electrically insulated metal tab for direct heatsink mounting without insulating pads.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives voltage-controlled signal to modulate channel conductivity; requires ≥10 V for full enhancement and low R_DS(on).
2 (Drain)	High-side current path	Connected to positive rail or inductive load; carries full switched current and withstands 200 V transient spikes.
3 (Source)	Reference node	Serves as return path and gate reference; tied to power ground or low-side switch source in half-bridge configurations.

Key Features

Feature	Design Value
Low on-resistance	0.036 Ω typ at 12.5 A - Reduces conduction loss in high-current DC-DC output stages, improving efficiency at >10 A loads.
High-speed switching	35 ns turn-on delay + 85 ns fall time - Enables >200 kHz PWM operation with minimized switching loss in SMPS designs.
Robust avalanche rating	9 A I_AP, 5.4 mJ E_AR - Supports unclamped inductive switching in relay drivers and solenoid controls without external protection.
Body diode optimization	140 ns t_rr, 0.7 µC Q_rr - Limits reverse recovery loss and voltage overshoot during commutation in flyback and LLC resonant converters.
Thermal performance	4.17 °C/W θ_ch-c - Allows direct mounting to heatsinks for sustained 25 A operation with ≤125 °C case temperature rise at 30 W dissipation.

Applications

Industrial Motor Drives	DC-DC Converters
Use Scenario: Half-bridge inverter stage for 24–48 V BLDC motor control in factory automation systems. IC Role / Device Role / Timing Role: High-side power switch handling 20 A peak phase current with 200 kHz PWM gating. Use Value: Low R_DS(on) minimizes I²R heating during continuous conduction mode; fast t_f reduces shoot-through risk during dead-time transitions.	Use Scenario: Primary-side switch in 48 V input, 12 V output synchronous buck converter for telecom power shelves. IC Role / Device Role / Timing Role: Main power transistor operating at 300 kHz with 50% duty cycle and 25 A load current. Use Value: 56 nC Q_g enables efficient gate driving with low-power controllers; 5.4 mJ E_AR tolerates output short-circuit events without failure.
Uninterruptible Power Supplies	Industrial Lighting Ballasts
Use Scenario: Inverter bridge in 120 VAC online UPS delivering 1 kVA with battery backup. IC Role / Device Role / Timing Role: Bidirectional switching element in full-bridge topology managing 10 A RMS output current. Use Value: Body diode V_DF = 0.9 V at 25 A reduces conduction loss during freewheeling; 150 °C T_ch rating supports sealed enclosure operation.	Use Scenario: Resonant switch in electronic HID ballast for 400 W metal halide lamps. IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) transistor operating at 70–120 kHz with high dv/dt stress. Use Value: Low Crss (54 pF) improves ZVS soft-switching margin; TO-220FN isolated tab simplifies thermal management in compact lamp housings.

Industrial Motor Drives

DC-DC Converters

Use Scenario: Half-bridge inverter stage for 24–48 V BLDC motor control in factory automation systems.

IC Role / Device Role / Timing Role: High-side power switch handling 20 A peak phase current with 200 kHz PWM gating.

Use Value: Low R_DS(on) minimizes I²R heating during continuous conduction mode; fast t_f reduces shoot-through risk during dead-time transitions.

Use Scenario: Primary-side switch in 48 V input, 12 V output synchronous buck converter for telecom power shelves.

IC Role / Device Role / Timing Role: Main power transistor operating at 300 kHz with 50% duty cycle and 25 A load current.

Use Value: 56 nC Q_g enables efficient gate driving with low-power controllers; 5.4 mJ E_AR tolerates output short-circuit events without failure.

Uninterruptible Power Supplies

Industrial Lighting Ballasts

Use Scenario: Inverter bridge in 120 VAC online UPS delivering 1 kVA with battery backup.

IC Role / Device Role / Timing Role: Bidirectional switching element in full-bridge topology managing 10 A RMS output current.

Use Value: Body diode V_DF = 0.9 V at 25 A reduces conduction loss during freewheeling; 150 °C T_ch rating supports sealed enclosure operation.

Use Scenario: Resonant switch in electronic HID ballast for 400 W metal halide lamps.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) transistor operating at 70–120 kHz with high dv/dt stress.

Use Value: Low Crss (54 pF) improves ZVS soft-switching margin; TO-220FN isolated tab simplifies thermal management in compact lamp housings.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM20	200 V V_DSS, 20 A I_D, 0.05 Ω R_DS(on), TO-220 package (non-isolated tab)	Lower current rating and higher on-resistance; no isolated tab limits heatsink flexibility	Acceptable for lower-power (<15 A) designs where thermal isolation is not required.
IRF640NPBF	200 V V_DSS, 18 A I_D, 0.18 Ω R_DS(on), TO-220 package (non-isolated tab)	Significantly higher conduction loss; slower switching (t_f = 110 ns); no avalanche rating specified	Only suitable for low-frequency (<50 kHz), low-efficiency applications where cost is prioritized over performance.

Compared with STP20NM20 and IRF640NPBF, the H5N2007FN-E delivers superior current handling, lower conduction loss, faster switching, and guaranteed avalanche ruggedness-making it the preferred choice for thermally constrained, high-reliability industrial power stages.

Availability

H5N2007FN-E is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, uninterruptible power supplies, and electronic lighting ballasts requiring stable component supply and long-term manufacturability.

Supply support for H5N2007FN-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The H5N2007FN-E belongs to Renesas' legacy high-voltage power MOSFET product line, engineered for rugged, high-efficiency switching in industrial power conversion and motor control applications.

FAQ

What is the maximum continuous drain current rating for the H5N2007FN-E?

The H5N2007FN-E is rated for 25 A continuous drain current (I_D) at T_c = 25 °C. Derating applies above 25 °C case temperature per the power vs. temperature curve on page 3 of the datasheet; at 75 °C T_c, the usable I_D drops to approximately 18 A to maintain safe channel temperature below 150 °C. This rating assumes proper heatsinking using the TO-220FN isolated tab.

Does the H5N2007FN-E have an isolated tab, and why does it matter?

Yes, the H5N2007FN-E uses the TO-220FN package with an electrically isolated metal tab. This allows direct mechanical attachment to a heatsink without requiring insulating pads or washers-reducing thermal resistance and assembly complexity. The isolation also prevents short circuits when multiple devices share a common heatsink in multi-phase or bridge configurations, which is critical in motor drives and inverters.

What is the gate threshold voltage range for the H5N2007FN-E, and how does it affect drive circuit design?

The H5N2007FN-E has a gate-to-source cutoff voltage (V_GS(off)) range of 3.0–4.0 V at I_D = 1 mA. This means the device begins conducting significantly above 3.0 V and reaches full enhancement near 10 V. Drive circuits must supply ≥10 V to achieve the specified 0.036 Ω R_DS(on); using 5 V logic-level drivers will result in high conduction loss due to partial enhancement. The H5N2007FN-E is not a logic-level MOSFET.

Can the H5N2007FN-E be used in avalanche-mode operation, and what are its limits?

Yes, the H5N2007FN-E is characterized for repetitive avalanche operation with I_AP = 9 A and E_AR = 5.4 mJ at T_ch = 25 °C. These ratings assume single-pulse conditions with strict limits on pulse width (≤10 µs) and duty cycle (≤1%). For reliable avalanche use, layout must minimize stray inductance, and gate drive must remain active during the event to prevent thermal runaway. The H5N2007FN-E is not intended for continuous avalanche operation.

How does the body diode performance of the H5N2007FN-E compare to standard rectifiers in freewheeling applications?

The H5N2007FN-E's integrated body diode has V_DF = 0.9 V at 25 A and t_rr = 140 ns, with Q_rr = 0.7 µC. Compared to discrete fast recovery diodes (e.g., MUR1520), its forward drop is competitive but reverse recovery is slower-making it suitable for moderate-frequency freewheeling (≤100 kHz) but less ideal than dedicated SiC Schottky diodes in high-frequency PFC stages. Its performance is sufficient for motor drive and DC-DC converter catch diode roles where synchronous rectification isn't implemented.

H5N2007FN-E Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

H5N2007FN-E FAQ

1.How can I place an order for H5N2007FN-E through Aetrix?

Please submit a Request for Quotation (RFQ) for H5N2007FN-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for H5N2007FN-E reliable?

The price and inventory of H5N2007FN-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for H5N2007FN-E is usually 5 days.

3.What payment methods are accepted for H5N2007FN-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for H5N2007FN-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for H5N2007FN-E?

H5N2007FN-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your H5N2007FN-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for H5N2007FN-E?

For technical support, including H5N2007FN-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your H5N2007FN-E requirements.

6.How does Aetrix verify that H5N2007FN-E is sourced from the original manufacturer or authorized distributors?

All H5N2007FN-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that H5N2007FN-E meets industry standards.

7.What is the process for return or replacement of H5N2007FN-E?

All H5N2007FN-E units undergo pre-shipment inspection (PSI). If there is an issue with H5N2007FN-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The H5N2007FN-E part is unused and in its original packaging.

Return procedure for H5N2007FN-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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