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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas H5N2007LSTL-E

Name: H5N2007LSTL-E
Brand: Renesas
SKU: H5N2007LSTL-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: H5N2007LSTL-E

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: H5N2007LSTL-E.pdf

Description:: 25A, 200V, 0.047OHM, N CHANNEL M

Quantity:: RFQ Add To RFQ list

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Product details

Overview

H5N2007LSTL-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters, motor drivers, and industrial power supplies. It features 200 V V_DSS, 25 A continuous drain current, 0.036 Ω typical R_DS(on) at V_GS = 10 V, and TO-220FN package with isolated heatsink tab. Its low gate charge (56 nC) and fast switching (t_d(on) = 35 ns, t_f = 85 ns) support efficient hard-switching topologies.

For engineers reviewing the H5N2007LSTL-E datasheet, H5N2007LSTL-E pinout, H5N2007LSTL-E application, or H5N2007LSTL-E equivalent, key selection criteria include avalanche ruggedness (9 A I_AP, 5.4 mJ E_AR), body diode reverse recovery performance (t_rr = 140 ns, Q_rr = 0.7 µC), thermal resistance (θ_ch-c = 4.17 °C/W), and gate threshold voltage range (3.0–4.0 V).

Technical Context

This MOSFET employs planar vertical DMOS architecture optimized for high-voltage, medium-current switching. Its channel design balances on-resistance and safe operating area (SOA), supporting pulse currents up to 100 A with ≤1% duty cycle. The integrated body diode exhibits controlled reverse recovery characteristics suitable for synchronous rectification and freewheeling applications.

Thermal management is enabled by the TO-220FN package's isolated metal tab, allowing direct mounting to heatsinks without electrical isolation hardware. Gate drive requirements are defined by 13 nC Q_gs and 26 nC Q_gd, enabling compatibility with standard 10 V logic-level drivers while maintaining robust noise immunity via ±30 V V_GSS rating.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - Maximum blocking voltage before avalanche; supports 160 V DC bus designs with 25% margin.
R_DS(on) (typ)	0.036 Ω at I_D = 12.5 A, V_GS = 10 V - Enables <1 W conduction loss at 12.5 A, critical for thermal budget in compact power stages.
Q_g	56 nC - Determines gate driver power requirement and switching loss; compatible with common 1-A peak drivers.
t_rr	140 ns - Body diode recovery time directly impacts turn-on loss in synchronous buck or half-bridge configurations.
θ_ch-c	4.17 °C/W - Defines heatsink sizing baseline; enables 30 W dissipation at 125°C case-to-ambient ΔT with adequate cooling.
I_AP	9 A - Avalanche current rating confirms single-pulse energy handling capability (5.4 mJ) for inductive load protection.

Pinout & Package

Package: TO-220FN (EIAJ standard), thermally enhanced variant with electrically isolated metal tab for direct heatsink mounting. Tab is internally connected to Drain (Pin 2).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives 10 V logic-level signal; requires 13 nC charge to fully enhance; ±30 V absolute max rating prevents ESD damage.
2 (Drain)	High-side power terminal	Connected to DC bus or inductive load; electrically tied to isolated metal tab for thermal path; withstands 200 V blocking.
3 (Source)	Power return / reference node	Serves as local ground reference for gate drive; carries full load current (25 A continuous); low-inductance layout essential for switching stability.

Key Features

Feature	Design Value
Low R_DS(on)	0.036 Ω typ reduces conduction losses by >30% vs. comparable 200 V MOSFETs, extending efficiency in 12–48 V input systems.
Fast switching	35 ns turn-on delay + 85 ns fall time enables >500 kHz operation in hard-switched SMPS without excessive gate drive loss.
Avalanche-rated	9 A single-pulse avalanche current supports reliable operation under inductive switching stress without external snubbers.
Optimized body diode	140 ns t_rr and 0.7 µC Q_rr minimize reverse recovery loss in freewheeling paths, reducing heat in motor drive H-bridges.

Applications

Industrial Motor Drives	DC-DC Converters
Use Scenario: Half-bridge inverter stage for 3-phase BLDC motor control in HVAC blowers and pump systems. IC Role / Device Role / Timing Role: High-side and low-side switching element; handles 25 A peak phase current with 200 V bus voltage. Use Value: Low R_DS(on) and fast t_f reduce total power loss per switch, enabling smaller heatsinks and higher power density in enclosed enclosures.	Use Scenario: Primary-side switch in 48 V–12 V isolated forward converter for telecom power shelves. IC Role / Device Role / Timing Role: Main power switch operating at 200–300 kHz with 160 V V_DS stress during reset. Use Value: 5.4 mJ avalanche energy rating eliminates need for clamping circuits during transformer leakage inductance spikes.
Uninterruptible Power Supplies	Industrial Lighting Ballasts
Use Scenario: Output inverter H-bridge in 1 kVA online UPS with battery backup and pure sine wave output. IC Role / Device Role / Timing Role: Bidirectional switching device managing 25 A RMS output current and 200 V DC link reversal. Use Value: Robust body diode with 140 ns t_rr ensures clean commutation during zero-crossing transitions, minimizing THD in output waveform.	Use Scenario: Resonant half-bridge switch in electronic HID ballast for 250 W metal halide lamps. IC Role / Device Role / Timing Role: Hard-switched resonant transistor operating at 70–100 kHz with high dv/dt stress. Use Value: 4.17 °C/W θ_ch-c allows direct heatsink mounting without insulating pads, simplifying mechanical design and improving long-term thermal reliability.

Industrial Motor Drives

DC-DC Converters

Use Scenario: Half-bridge inverter stage for 3-phase BLDC motor control in HVAC blowers and pump systems.

IC Role / Device Role / Timing Role: High-side and low-side switching element; handles 25 A peak phase current with 200 V bus voltage.

Use Value: Low R_DS(on) and fast t_f reduce total power loss per switch, enabling smaller heatsinks and higher power density in enclosed enclosures.

Use Scenario: Primary-side switch in 48 V–12 V isolated forward converter for telecom power shelves.

IC Role / Device Role / Timing Role: Main power switch operating at 200–300 kHz with 160 V V_DS stress during reset.

Use Value: 5.4 mJ avalanche energy rating eliminates need for clamping circuits during transformer leakage inductance spikes.

Uninterruptible Power Supplies

Industrial Lighting Ballasts

Use Scenario: Output inverter H-bridge in 1 kVA online UPS with battery backup and pure sine wave output.

IC Role / Device Role / Timing Role: Bidirectional switching device managing 25 A RMS output current and 200 V DC link reversal.

Use Value: Robust body diode with 140 ns t_rr ensures clean commutation during zero-crossing transitions, minimizing THD in output waveform.

Use Scenario: Resonant half-bridge switch in electronic HID ballast for 250 W metal halide lamps.

IC Role / Device Role / Timing Role: Hard-switched resonant transistor operating at 70–100 kHz with high dv/dt stress.

Use Value: 4.17 °C/W θ_ch-c allows direct heatsink mounting without insulating pads, simplifying mechanical design and improving long-term thermal reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM20	200 V V_DSS, 20 A I_D, 0.055 Ω R_DS(on), TO-220 package (non-isolated tab)	Higher R_DS(on) increases conduction loss by ~50%; non-isolated tab requires insulating washer for heatsink mounting.	Choose when cost sensitivity outweighs thermal performance and board space constraints allow extra isolation hardware.
IXTH24N20P	200 V V_DSS, 24 A I_D, 0.042 Ω R_DS(on), TO-247 package, 100% avalanche rated	Larger TO-247 footprint; higher Q_g (72 nC) demands stronger gate driver; superior SOA for repetitive avalanche.	Prefer for high-reliability industrial systems requiring guaranteed repetitive avalanche capability and higher peak current headroom.

Compared with STP20NM20 and IXTH24N20P, the H5N2007LSTL-E delivers the lowest R_DS(on) in TO-220FN form factor, enabling higher efficiency in space-constrained designs where isolated heatsinking is mandatory and single-pulse avalanche suffices.

Availability

H5N2007LSTL-E is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and uninterruptible power supplies requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for H5N2007LSTL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

The H5N2007LSTL-E belongs to Renesas' legacy high-voltage power MOSFET product line, engineered for robustness and efficiency in industrial-grade power conversion and motor control applications.

FAQ

What is the maximum continuous drain current rating for the H5N2007LSTL-E?

The H5N2007LSTL-E is rated for 25 A continuous drain current (I_D) at T_c = 25°C. Derating applies above this temperature-e.g., ~18 A at T_c = 100°C per the power vs. temperature derating curve. This rating assumes proper heatsinking per its 4.17 °C/W θ_ch-c specification. The H5N2007LSTL-E must not exceed its 150°C channel temperature limit under any operating condition.

Does the H5N2007LSTL-E have an isolated heatsink tab?

Yes, the H5N2007LSTL-E uses the TO-220FN package with an electrically isolated metal tab internally connected to the Drain (Pin 2). This allows direct mechanical attachment to a heatsink without requiring insulating hardware, simplifying thermal design and improving reliability in high-voltage applications. The isolation voltage rating is confirmed by Renesas' package construction and test data.

What is the gate threshold voltage range for the H5N2007LSTL-E?

The H5N2007LSTL-E has a gate-to-source cutoff voltage (V_GS(off)) range of 3.0 V to 4.0 V at V_DS = 10 V and I_D = 1 mA. This defines the minimum gate voltage required to begin turning on the device. For full enhancement, 10 V is recommended-ensuring the H5N2007LSTL-E achieves its specified 0.036 Ω R_DS(on) and avoids linear-mode operation during switching.

Can the H5N2007LSTL-E be used in avalanche mode?

Yes, the H5N2007LSTL-E is explicitly rated for single-pulse avalanche operation with I_AP = 9 A and E_AR = 5.4 mJ at T_ch ≤ 150°C. This capability allows it to safely absorb inductive energy during switching transients without external protection. However, Renesas does not guarantee repetitive avalanche performance, so the H5N2007LSTL-E should only be operated in avalanche during infrequent fault conditions-not as part of normal switching behavior.

What is the typical reverse recovery charge (Q_rr) of the body diode in the H5N2007LSTL-E?

The H5N2007LSTL-E body diode has a typical reverse recovery charge (Q_rr) of 0.7 µC under test conditions of I_F = 25 A, di_F/dt = 100 A/µs, and V_GS = 0. This parameter directly affects turn-on loss when the MOSFET commutates inductive current-lower Q_rr reduces switching loss and EMI in half-bridge and synchronous rectifier topologies. The H5N2007LSTL-E's Q_rr is confirmed in its official Renesas datasheet Rev.1.00.

H5N2007LSTL-E Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: 25A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

H5N2007LSTL-E FAQ

1.How can I place an order for H5N2007LSTL-E through Aetrix?

Please submit a Request for Quotation (RFQ) for H5N2007LSTL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for H5N2007LSTL-E reliable?

The price and inventory of H5N2007LSTL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for H5N2007LSTL-E is usually 5 days.

3.What payment methods are accepted for H5N2007LSTL-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for H5N2007LSTL-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for H5N2007LSTL-E?

H5N2007LSTL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your H5N2007LSTL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for H5N2007LSTL-E?

For technical support, including H5N2007LSTL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your H5N2007LSTL-E requirements.

6.How does Aetrix verify that H5N2007LSTL-E is sourced from the original manufacturer or authorized distributors?

All H5N2007LSTL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that H5N2007LSTL-E meets industry standards.

7.What is the process for return or replacement of H5N2007LSTL-E?

All H5N2007LSTL-E units undergo pre-shipment inspection (PSI). If there is an issue with H5N2007LSTL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The H5N2007LSTL-E part is unused and in its original packaging.

Return procedure for H5N2007LSTL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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