Renesas H5N2305P-E

Overview

H5N2305P-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters, motor drives, and industrial power supplies. It features 230 V V_DSS, 35 A continuous drain current, 0.030 Ω typical R_DS(on) at V_GS = 10 V, and TO-3PFM package with isolated case. Used in 48 V telecom rectifiers and UPS inverters requiring low conduction loss and fast turn-on/turn-off.

For engineers reviewing the H5N2305P-E datasheet, H5N2305P-E pinout, H5N2305P-E application, or H5N2305P-E equivalent, key selection criteria include avalanche ruggedness (18 A I_AP), body-diode reverse recovery time (180 ns), gate charge (105 nC), and thermal resistance (2.08 °C/W θ_ch-c) for high-power density designs.

Technical Context

This MOSFET employs planar vertical DMOS structure optimized for high-voltage, high-current switching with low gate charge and minimized output capacitance (C_oss = 690 pF). Its gate threshold voltage range (2.5–4.0 V) ensures reliable enhancement-mode operation across temperature.

The integrated body diode supports synchronous rectification and freewheeling in hard-switched topologies. Thermal design relies on direct case-to-heatsink mounting via the isolated TO-3PFM metal tab, enabling 60 W channel dissipation at T_c = 25°C with defined derating above 25°C.

Key Specifications

Pinout & Package

Package: TO-3PFM - Metal-can package with electrically isolated case, 5.2 g mass, and 21.0 × 19.9 mm footprint. Mounting tab serves as drain terminal and thermal interface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with H5N2305P-E, IXTH35N20P offers broader distribution but sacrifices 30 V voltage headroom and thermal isolation, while STW35NK23Z matches V_DSS but trades 10% higher conduction loss and unverified avalanche ruggedness-making H5N2305P-E optimal for mission-critical 48–60 V bus systems demanding reliability and thermal simplicity.

Availability

H5N2305P-E is available at Aetrix Electronics and suitable for telecom rectifiers, industrial motor drives, uninterruptible power supplies, and high-voltage DC-DC converters requiring stable component supply and long-term production continuity.

Supply support for H5N2305P-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and mixed-signal ICs.

The H5N2305P-E belongs to Renesas' high-voltage discrete MOSFET product line, engineered for industrial-grade power conversion systems requiring ruggedness, thermal stability, and consistent parametric performance across temperature.

FAQ

What is the maximum continuous drain current rating for H5N2305P-E at 100°C case temperature?

The H5N2305P-E supports 35 A continuous drain current at T_c = 25°C, derating linearly to approximately 22 A at T_c = 100°C per the power vs. temperature derating curve on page 4 of the datasheet. This reflects its 60 W channel dissipation limit and 2.08 °C/W thermal resistance, requiring adequate heatsinking to sustain high-current operation.

Does H5N2305P-E have an electrically isolated package, and how does that affect PCB layout?

Yes, the H5N2305P-E uses the TO-3PFM package with an electrically isolated metal case. This eliminates the need for insulating pads or bushings when mounting directly to a grounded heatsink, simplifying thermal design and reducing parasitic inductance in high-di/dt paths. The drain terminal connects to the case, so PCB layout must ensure no unintended shorting between drain and other nets.

What gate drive voltage is recommended for optimal R_DS(on) performance in H5N2305P-E?

H5N2305P-E achieves its specified 0.030 Ω typical R_DS(on) at V_GS = 10 V, with guaranteed performance up to ±30 V. A 10 V gate drive is recommended for full enhancement and minimal conduction loss; 5 V is insufficient for full turn-on (V_GS(off) max is 4.0 V), risking excessive heating under load.

How does the body diode reverse recovery performance of H5N2305P-E impact its use in synchronous rectification?

The H5N2305P-E body diode has t_rr = 180 ns and Q_rr = 1.3 µC, making it suitable for synchronous rectification in medium-frequency LLC or phase-shifted full-bridge converters where ZVS is achievable. However, its recovery characteristics are not optimized for ultra-high-frequency (>1 MHz) operation, where dedicated SiC Schottky diodes would yield lower loss.

Is H5N2305P-E qualified for automotive applications according to Renesas quality grading?

No, the H5N2305P-E is classified as "Standard" grade per Renesas' quality policy (page 7 of the datasheet), intended for office equipment, industrial robots, and communications gear-not transportation or safety-critical systems. It lacks AEC-Q101 qualification and is not approved for automotive powertrain or chassis applications without explicit written consent from Renesas Electronics.