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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas H5N2512FN-E

Name: H5N2512FN-E
Brand: Renesas
SKU: H5N2512FN-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: H5N2512FN-E

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: H5N2512FN-E.pdf

Description:: N-CHANNEL POWER MOSFET

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Product details

Overview

H5N2512FN-E from Renesas Electronics is a silicon N-channel MOSFET designed for high-speed power switching in DC-DC converters and motor drive circuits, featuring 250 V V_DSS, 18 A continuous drain current, 0.082 Ω typical R_DS(on) at V_GS = 10 V, and integrated fast-recovery body diode with 110 ns t_rr.

For engineers reviewing the H5N2512FN-E datasheet, H5N2512FN-E pinout, H5N2512FN-E application, or H5N2512FN-E equivalent, this device is selected for robustness in industrial power supplies, PWM-controlled solenoid drivers, and high-efficiency flyback converters where low conduction loss and fast switching are critical.

Technical Context

This MOSFET employs a planar vertical DMOS structure optimized for high-voltage operation and thermal stability. Its gate charge profile (Q_g = 81 nC, Q_gd = 38 nC) supports efficient hard-switching up to 100 kHz while maintaining low EMI due to controlled dV/dt and dI/dt characteristics.

The built-in body diode exhibits low forward voltage (V_DF = 0.9 V typ. at 18 A) and fast reverse recovery (Q_rr = 0.39 µC), enabling reliable synchronous rectification and freewheeling in inductive loads without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	250 V - Withstands DC bus voltages up to 250 V in offline SMPS and industrial motor drives.
R_DS(on) (typ.)	0.082 Ω at V_GS = 10 V - Delivers ≤13.3 W conduction loss at 18 A, reducing heatsink requirements.
t_r/t_f	60/60 ns - Enables clean edge transitions in 50–100 kHz PWM stages with minimal switching loss.
Q_g	81 nC - Matches standard gate drivers (e.g., IR2110, UCC27531) without requiring oversized drive capability.
t_rr	110 ns - Limits diode reverse recovery energy in inductive switching, reducing voltage spikes and snubber stress.
θ_ch-c	3.57 °C/W - Supports 35 W channel dissipation at T_c = 25°C, enabling compact TO-220FN mounting on PCBs with copper pour.

Pinout & Package

Package: TO-220FN (RENESAS code PRSS0003AB-A), insulated tab, through-hole mounting, 2.0 g mass, 15 mm × 14 mm footprint with 3.2 mm mounting hole.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives 10 V logic-level gate drive; ±30 V absolute max rating allows robust noise margin.
2 (Drain)	High-side power output	Connected to DC bus or inductive load return; electrically isolated tab enables direct heatsink mounting.
3 (Source)	Power ground reference	Serves as common return for gate drive and load current; ties to PCB ground plane for low-inductance layout.

Key Features

Feature	Design Value
Low R_DS(on)	0.082 Ω typ. reduces I²R losses by >35% vs. comparable 250 V MOSFETs, improving efficiency in 12–48 V systems.
Built-in fast-recovery diode	110 ns t_rr and 0.39 µC Q_rr eliminate need for external anti-parallel diode in half-bridge and flyback topologies.
High avalanche ruggedness	18 A I_AP rating ensures single-pulse energy handling up to 120 mJ, supporting inductive load interruption without failure.
Thermal performance	3.57 °C/W θ_ch-c enables 35 W continuous dissipation with modest heatsinking-critical for space-constrained industrial modules.

Applications

Industrial DC-DC Converters	Brushed DC Motor Drivers
Use Scenario: 24 V/48 V input to 5–12 V isolated or non-isolated buck converters in PLC power modules and sensor transmitters. IC Role / Device Role / Timing Role: Primary high-side switch in synchronous rectified topology operating at 50–100 kHz. Use Value: Low R_DS(on) and fast switching minimize total power loss (<1.5 W at full load), extending thermal margin in sealed enclosures.	Use Scenario: H-bridge or half-bridge control of 24–48 V brushed motors in automated valves, conveyor systems, and HVAC actuators. IC Role / Device Role / Timing Role: Low-side or high-side switching element with body-diode freewheeling during PWM off-time. Use Value: Integrated 110 ns t_rr diode prevents voltage overshoot during current reversal, eliminating external snubbers and reducing BOM count.
AC-DC Flyback Power Supplies	Solenoid & Relay Drivers
Use Scenario: Primary-side switch in universal-input (85–264 VAC) flyback adapters rated 30–60 W for industrial instrumentation. IC Role / Device Role / Timing Role: High-voltage switching transistor with 250 V V_DSS margin over reflected 200 V peak drain voltage. Use Value: 3.57 °C/W thermal impedance sustains 35 W dissipation under worst-case convection cooling, enabling fanless design.	Use Scenario: High-current pulse driver for 24 V/12 A solenoids in pneumatic control manifolds and safety interlock systems. IC Role / Device Role / Timing Role: Single-ended switch with fast turn-off (t_f = 60 ns) to suppress back-EMF-induced arcing. Use Value: 72 A ID(pulse) rating handles 10× steady-state current during inrush, ensuring reliable engagement without derating.

Industrial DC-DC Converters

Brushed DC Motor Drivers

Use Scenario: 24 V/48 V input to 5–12 V isolated or non-isolated buck converters in PLC power modules and sensor transmitters.

IC Role / Device Role / Timing Role: Primary high-side switch in synchronous rectified topology operating at 50–100 kHz.

Use Value: Low R_DS(on) and fast switching minimize total power loss (<1.5 W at full load), extending thermal margin in sealed enclosures.

Use Scenario: H-bridge or half-bridge control of 24–48 V brushed motors in automated valves, conveyor systems, and HVAC actuators.

IC Role / Device Role / Timing Role: Low-side or high-side switching element with body-diode freewheeling during PWM off-time.

Use Value: Integrated 110 ns t_rr diode prevents voltage overshoot during current reversal, eliminating external snubbers and reducing BOM count.

AC-DC Flyback Power Supplies

Solenoid & Relay Drivers

Use Scenario: Primary-side switch in universal-input (85–264 VAC) flyback adapters rated 30–60 W for industrial instrumentation.

IC Role / Device Role / Timing Role: High-voltage switching transistor with 250 V V_DSS margin over reflected 200 V peak drain voltage.

Use Value: 3.57 °C/W thermal impedance sustains 35 W dissipation under worst-case convection cooling, enabling fanless design.

Use Scenario: High-current pulse driver for 24 V/12 A solenoids in pneumatic control manifolds and safety interlock systems.

IC Role / Device Role / Timing Role: Single-ended switch with fast turn-off (t_f = 60 ns) to suppress back-EMF-induced arcing.

Use Value: 72 A ID(pulse) rating handles 10× steady-state current during inrush, ensuring reliable engagement without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM50FP	500 V V_DSS, 0.24 Ω R_DS(on), TO-220FP package (non-insulated tab)	Higher voltage rating but higher conduction loss; requires isolation hardware for heatsink mounting	Select when system DC bus exceeds 300 V or when legacy STMicro design reuse is required.
IXTP18N25P	250 V V_DSS, 0.12 Ω R_DS(on), TO-220 package (insulated tab), no integrated diode	Lacks body diode; needs external ultrafast diode for freewheeling; slightly higher R_DS(on)	Choose when discrete diode selection is preferred for optimized recovery tuning or when lower gate charge (52 nC) is prioritized over diode integration.

Compared with STP20NM50FP and IXTP18N25P, the H5N2512FN-E delivers the lowest R_DS(on) among 250 V TO-220FN devices with integrated diode, making it optimal for thermally constrained, high-efficiency 24–48 V industrial power stages where board space and component count are critical.

Availability

H5N2512FN-E is available at Aetrix Electronics and suitable for industrial DC-DC converters, brushed DC motor drivers, and AC-DC flyback power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for H5N2512FN-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The H5N2512FN-E belongs to Renesas' high-voltage power MOSFET product line, engineered for rugged, high-efficiency switching in industrial power conversion and motor control applications where reliability under thermal and electrical stress is essential.

FAQ

What is the maximum continuous drain current rating for the H5N2512FN-E?

The H5N2512FN-E has a continuous drain current (I_D) rating of 18 A at T_c = 25°C. This rating assumes proper heatsinking and is derated linearly above 25°C case temperature per the datasheet's thermal curves. At T_c = 100°C, the usable I_D drops to approximately 9.5 A. The H5N2512FN-E must be operated within these limits to ensure long-term reliability and avoid thermal runaway.

Does the H5N2512FN-E include an integrated body diode, and what are its key recovery parameters?

Yes, the H5N2512FN-E integrates a fast-recovery body-drain diode with a typical forward voltage (V_DF) of 0.9 V at 18 A and reverse recovery time (t_rr) of 110 ns. Its reverse recovery charge (Q_rr) is 0.39 µC under standard test conditions (I_F = 18 A, di_F/dt = 100 A/µs). These values enable reliable freewheeling in inductive switching without external diodes in many half-bridge and flyback designs.

What is the gate threshold voltage range for the H5N2512FN-E, and is it compatible with 5 V logic-level drive?

The H5N2512FN-E has a gate-to-source cutoff voltage (V_GS(off)) range of 1.5 V to 4.0 V, meaning it begins conducting significantly below 5 V. However, full enhancement to achieve rated R_DS(on) requires V_GS ≥ 10 V. While it will turn on with 5 V drive, R_DS(on) rises sharply (to >0.25 Ω), increasing conduction loss. For optimal performance, the H5N2512FN-E should be driven with 10–15 V gate voltage using a dedicated gate driver.

What package type does the H5N2512FN-E use, and is the mounting tab electrically insulated?

The H5N2512FN-E uses the TO-220FN package (RENESAS code PRSS0003AB-A), which features an electrically insulated mounting tab. This allows direct mechanical attachment to a heatsink without requiring insulating washers or pads-reducing thermal resistance and simplifying assembly. The package is through-hole mounted and weighs 2.0 g.

How does the H5N2512FN-E perform under avalanche conditions, and what is its rated avalanche current?

The H5N2512FN-E is rated for single-pulse avalanche energy with an avalanche current (I_AP) of 18 A at T_ch ≤ 150°C. This corresponds to a maximum single-pulse avalanche energy of approximately 120 mJ under standard test conditions. The device is designed to withstand transient overvoltage events-such as inductive kickback in relay or solenoid switching-without failure, provided avalanche operation remains within the specified single-pulse limit and thermal constraints.

H5N2512FN-E Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

H5N2512FN-E FAQ

1.How can I place an order for H5N2512FN-E through Aetrix?

Please submit a Request for Quotation (RFQ) for H5N2512FN-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for H5N2512FN-E reliable?

The price and inventory of H5N2512FN-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for H5N2512FN-E is usually 5 days.

3.What payment methods are accepted for H5N2512FN-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for H5N2512FN-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for H5N2512FN-E?

H5N2512FN-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your H5N2512FN-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for H5N2512FN-E?

For technical support, including H5N2512FN-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your H5N2512FN-E requirements.

6.How does Aetrix verify that H5N2512FN-E is sourced from the original manufacturer or authorized distributors?

All H5N2512FN-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that H5N2512FN-E meets industry standards.

7.What is the process for return or replacement of H5N2512FN-E?

All H5N2512FN-E units undergo pre-shipment inspection (PSI). If there is an issue with H5N2512FN-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The H5N2512FN-E part is unused and in its original packaging.

Return procedure for H5N2512FN-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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