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Renesas H5N2521FN-E#T2
- Part No.:
- H5N2521FN-E#T2
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
H5N2521FN-E#T2.pdf
- Description:
- POWER FIELD-EFFECT TRANSISTOR
- Quantity:
- Payment:
- Shipping:
Inventory:5,732
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Product details
Overview
H5N2521FN-E#T2 from Renesas Electronics is a silicon N-channel MOSFET designed for high-speed power switching in DC-DC converters, motor drivers, and solid-state relays. It features 250 V VDSS, 3 A continuous drain current, 1.5 Ω typical RDS(on) at VGS = 10 V, 9 ns turn-on delay, and TO-220FN package with isolated heatsink tab.
For engineers reviewing the H5N2521FN-E#T2 datasheet, H5N2521FN-E#T2 pinout, H5N2521FN-E#T2 application, or H5N2521FN-E#T2 equivalent, key selection criteria include avalanche energy rating (2.2 mJ), body-diode reverse recovery time (82 ns), gate charge (5.3 nC), and thermal impedance (6.25 °C/W) for thermally constrained industrial switching designs.
Technical Context
This MOSFET employs planar vertical DMOS structure optimized for fast switching with low conduction loss. Its gate threshold voltage range (3.0–4.5 V) ensures reliable turn-on with standard 5 V or 10 V logic-level drivers, while ±30 V VGSS rating supports robust gate drive margin against transients.
The integrated body diode exhibits 0.89 V typical forward voltage at 3 A and 82 ns reverse recovery time under 100 A/µs di/dt - enabling efficient synchronous rectification and freewheeling in hard-switched topologies without external diode supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 250 V - Withstands up to 250 V drain-source blocking voltage, suitable for 200 V-class bus applications. |
| RDS(on) | 1.5 Ω (typ) at VGS = 10 V - Delivers low conduction loss at 3 A ID, minimizing I²R heating in compact power stages. |
| Qg | 5.3 nC - Enables fast switching with moderate gate driver strength; reduces switching loss in 100–500 kHz SMPS. |
| tr/tf | 7 ns / 7 ns - Supports high-frequency operation with minimal overlap loss in half-bridge configurations. |
| θch-c | 6.25 °C/W - Allows 20 W channel dissipation at Tc = 25 °C; requires heatsinking for sustained >10 W operation. |
| EAR | 2.2 mJ - Rated single-pulse avalanche energy enables robustness against inductive load switching transients. |
| trr | 82 ns - Fast body-diode recovery minimizes shoot-through risk and improves efficiency in bidirectional switching. |
Pinout & Package
Package: TO-220FN (RENESAS code PRSS0003AB-A), featuring insulated metal tab for direct heatsink mounting without isolation hardware.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control terminal | Receives gate drive signal; requires ≤±30 V swing; 0.95 nC Qgs ensures predictable Miller plateau timing. |
| 2 (Drain) | High-side power output | Connected to switched high-voltage rail; electrically isolated from tab; handles 250 V blocking and 6 A pulsed current. |
| 3 (Source) | Power return reference | Serves as local ground reference for gate drive; ties to low-side switch source or system ground; carries full load current. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 1.5 Ω typ at 10 V gate drive reduces conduction loss by >30% vs. comparable 250 V MOSFETs in 3 A applications. |
| Fast switching | 9 ns td(on) + 7 ns tr enables <500 kHz operation with minimal dead-time penalty in resonant converters. |
| Robust avalanche rating | 2.2 mJ single-pulse energy allows safe operation during inductive turn-off without external snubbers in relay replacement. |
| Optimized body diode | 82 ns trr and 0.89 V VDF support efficient freewheeling in motor H-bridges and synchronous buck converters. |
| Thermally enhanced package | TO-220FN's isolated tab delivers 6.25 °C/W θch-c, enabling 20 W dissipation with minimal heatsink volume. |
Applications
| Industrial Motor Control | DC-DC Power Conversion |
|---|---|
|
Use Scenario: Driving 24–48 V brushed DC motors in automated valves and conveyor modules. IC Role / Device Role / Timing Role: High-side power switch controlling motor direction and PWM speed regulation. Use Value: Low RDS(on) minimizes heat generation at 3 A stall current; fast switching enables precise 20 kHz PWM without audible noise. |
Use Scenario: Primary-side switch in isolated flyback or forward converters for industrial PLC power supplies. IC Role / Device Role / Timing Role: Main switching transistor handling 200 V bus with 100–300 kHz switching frequency. Use Value: 250 V VDSS provides 20% margin over 200 V nominal input; 2.2 mJ avalanche rating absorbs leakage inductance spikes. |
| Solid-State Relay Replacement | LED Driver Switching |
|
Use Scenario: Replacing electromechanical relays in HVAC control panels and lighting contactors. IC Role / Device Role / Timing Role: Zero-crossing–free AC/DC switching element driving resistive and inductive loads up to 3 A. Use Value: TO-220FN insulated tab eliminates need for insulating washers; 150 °C Tch rating ensures reliability in sealed enclosures. |
Use Scenario: Constant-current switching element in high-brightness LED string drivers for signage and street lighting. IC Role / Device Role / Timing Role: PWM-controlled current regulator operating at 1–10 kHz with tight duty-cycle accuracy. Use Value: 7 ns fall time ensures sharp current transitions; low Qg reduces gate driver power consumption in battery-powered units. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed 250 V N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP25NM50FP | 500 V VDSS, 25 A ID, 0.22 Ω RDS(on), TO-220FP package (non-isolated tab) | Higher voltage/current rating but larger die and higher Qg (55 nC); less suitable for space-constrained 3 A designs | Choose only if system requires >250 V margin or >3 A current; requires isolation hardware due to conductive tab. |
| IXTP26N25P | 250 V VDSS, 26 A ID, 0.12 Ω RDS(on), TO-220 package (non-isolated tab), 100 ns trr | Lower RDS(on) but slower body diode and no avalanche rating; higher cost and footprint | Prefer for high-current linear-mode operation; avoid in avalanche-prone inductive switching without external clamping. |
Compared with STP25NM50FP and IXTP26N25P, the H5N2521FN-E#T2 offers optimal balance of 250 V rating, 3 A capability, fast 82 ns body-diode recovery, and thermally efficient isolated-tab packaging - making it uniquely suited for compact, thermally demanding 24–48 V industrial switching where layout simplicity and transient robustness are critical.
Availability
H5N2521FN-E#T2 is available at Aetrix Electronics and suitable for industrial motor control, DC-DC power conversion, solid-state relay replacement, and LED driver switching requiring stable component supply and long-term manufacturing continuity.
Supply support for H5N2521FN-E#T2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The H5N2521FN-E#T2 belongs to Renesas' legacy high-voltage power MOSFET product line, engineered specifically for reliable, high-efficiency switching in industrial automation and power supply systems operating up to 250 V.
FAQ
What is the maximum continuous drain current rating for the H5N2521FN-E#T2?
The H5N2521FN-E#T2 has a continuous drain current (ID) rating of 3 A at Tc = 25 °C. This rating assumes proper heatsinking to maintain case temperature within limits; derating applies above 25 °C per the 6.25 °C/W thermal impedance curve shown in the datasheet. At Tc = 100 °C, the usable ID drops to approximately 1.6 A.
Does the H5N2521FN-E#T2 have an insulated package tab?
Yes, the H5N2521FN-E#T2 uses the TO-220FN package (RENESAS code PRSS0003AB-A), which features an electrically insulated metal tab. This allows direct mounting to a heatsink without requiring additional insulating hardware such as mica washers or silicone pads - simplifying thermal design and improving long-term reliability in industrial environments.
What is the gate threshold voltage range for the H5N2521FN-E#T2?
The H5N2521FN-E#T2 has a gate-to-source cutoff voltage (VGS(off)) range of 3.0 V to 4.5 V at ID = 1 mA. This ensures consistent turn-on behavior with standard 5 V logic-level gate drivers while maintaining sufficient noise margin against false triggering in electrically noisy industrial settings.
Can the H5N2521FN-E#T2 be used in avalanche mode?
Yes, the H5N2521FN-E#T2 is rated for single-pulse avalanche energy (EAR) of 2.2 mJ at Tch ≤ 150 °C. This specification validates its use in circuits subject to inductive switching transients - such as relay coil suppression or motor phase switching - provided pulse conditions meet the datasheet's STch = 25 °C and Tch ≤ 150 °C constraints.
What is the typical body-diode reverse recovery time of the H5N2521FN-E#T2?
The H5N2521FN-E#T2 exhibits a typical body-drain diode reverse recovery time (trr) of 82 ns under test conditions of IF = 3 A, dIF/dt = 100 A/µs, and VGS = 0. This fast recovery supports efficient freewheeling in half-bridge and synchronous rectifier topologies without significant switching loss or voltage overshoot.
H5N2521FN-E#T2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2.2Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 5.3 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 160 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 20W (Ta)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220FN
H5N2521FN-E#T2 FAQ
1.How can I place an order for H5N2521FN-E#T2 through Aetrix?
Please submit a Request for Quotation (RFQ) for H5N2521FN-E#T2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for H5N2521FN-E#T2 reliable?
The price and inventory of H5N2521FN-E#T2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for H5N2521FN-E#T2 is usually 5 days.
3.What payment methods are accepted for H5N2521FN-E#T2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for H5N2521FN-E#T2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for H5N2521FN-E#T2?
H5N2521FN-E#T2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your H5N2521FN-E#T2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for H5N2521FN-E#T2?
For technical support, including H5N2521FN-E#T2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your H5N2521FN-E#T2 requirements.
6.How does Aetrix verify that H5N2521FN-E#T2 is sourced from the original manufacturer or authorized distributors?
All H5N2521FN-E#T2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that H5N2521FN-E#T2 meets industry standards.
7.What is the process for return or replacement of H5N2521FN-E#T2?
All H5N2521FN-E#T2 units undergo pre-shipment inspection (PSI). If there is an issue with H5N2521FN-E#T2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The H5N2521FN-E#T2 part is unused and in its original packaging.
Return procedure for H5N2521FN-E#T2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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