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Renesas H5N2901FN-E
- Part No.:
- H5N2901FN-E
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
H5N2901FN-E.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:3,157
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Product details
Overview
H5N2901FN-E from Renesas Electronics is a silicon N-channel MOSFET designed for high-speed power switching in DC-DC converters and motor drive circuits, featuring 290 V VDSS, 18 A continuous drain current, 0.070 Ω typical RDS(on) at VGS = 10 V, and TO-220FN package with isolated heatsink tab.
For engineers reviewing the H5N2901FN-E datasheet, H5N2901FN-E pinout, H5N2901FN-E application, or H5N2901FN-E equivalent, key selection criteria include avalanche energy rating (2.1 mJ), body-diode reverse recovery time (190 ns), gate charge (56 nC), and thermal impedance (4.17 °C/W) for thermally constrained industrial power stages.
Technical Context
This device operates as a unidirectional high-voltage power switch with enhancement-mode gate control, optimized for hard-switched topologies where low conduction loss and fast turn-off are critical. Its 290 V breakdown voltage supports 200–240 VAC rectified bus applications, and its 150 °C channel temperature rating enables operation in ambient environments up to 85 °C with proper heatsinking.
The integrated body diode exhibits 0.9 V forward voltage at 18 A and 190 ns reverse recovery time under 100 A/µs di/dt, making it suitable for freewheeling paths in synchronous or quasi-resonant converters. Gate threshold voltage (3.0–4.0 V) ensures robust noise immunity while remaining compatible with standard 5 V and 10 V logic-level drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 290 V - Supports 240 VAC mains-derived DC buses with 20% margin |
| RDS(on) | 0.070 Ω (typ) at ID = 9 A, VGS = 10 V - Enables <1.5 W conduction loss at 9 A |
| Qg | 56 nC - Determines gate driver power requirement and switching speed trade-off |
| tr/tf | 60 ns / 45 ns - Enables >100 kHz switching in hard-switched SMPS designs |
| θch-c | 4.17 °C/W - Requires ≥12 cm² 1 mm thick aluminum heatsink for 30 W dissipation at ΔT = 125 °C |
| EAR | 2.1 mJ - Withstands single-pulse inductive load energy without failure |
| ID | 18 A continuous - Rated for sustained current in motor phase-leg or PFC boost switches |
Pinout & Package
TO-220FN package with electrically isolated metal tab (pin 2) for direct heatsink mounting and enhanced thermal performance. Tab is connected to drain (D), enabling simplified mechanical integration without insulating hardware.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives 10 V logic-level signal to fully enhance channel; requires 56 nC total charge |
| 2 (Drain) | Main power output terminal | Connected to heatsink tab; carries full load current and withstands 290 V transient spikes |
| 3 (Source) | Power return reference | Serves as local ground reference for gate drive; source inductance must be minimized for clean switching |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 0.070 Ω typ reduces conduction losses by >35% vs. comparable 300 V MOSFETs in 12–24 V input DC-DC stages |
| Fast switching | 110 ns td(off) + 45 ns tf enables efficient operation above 150 kHz in telecom and server PSU designs |
| Avalanche ruggedness | 6 A IAP and 2.1 mJ EAR allow safe operation in inductive load switching without external snubbers |
| Body diode performance | 190 ns trr and 1.3 µC Qrr reduce switching loss and EMI in freewheeling paths of half-bridge topologies |
| Thermal design support | 4.17 °C/W θch-c and isolated tab simplify thermal management in space-constrained industrial enclosures |
Applications
| Industrial Motor Drives | Server Power Supplies |
|---|---|
Use Scenario: Half-bridge inverter stage for 3-phase BLDC motor control in HVAC blowers and industrial pumps. IC Role / Device Role / Timing Role: High-side and low-side power switch handling 18 A peak phase current at 20 kHz PWM frequency. Use Value: Low RDS(on) minimizes heat generation during continuous torque delivery; fast tf suppresses shoot-through risk during dead-time transitions. | Use Scenario: Primary-side switch in LLC resonant converter for 1 kW server PSU with 380 V DC bus. IC Role / Device Role / Timing Role: High-voltage switching element operating at 300–500 kHz with zero-voltage switching assistance. Use Value: 290 V VDSS provides sufficient margin over 380 V bus transients; low Qgd/Qg ratio improves ZVS initiation reliability. |
| Uninterruptible Power Systems | Industrial DC-DC Converters |
Use Scenario: Bidirectional buck-boost stage in 48 V battery backup system interfacing with 380 V DC microgrid. IC Role / Device Role / Timing Role: Synchronous rectifier and active switch in dual-active-bridge topology. Use Value: Body diode trr < 200 ns ensures minimal reverse recovery loss during polarity reversal; isolated tab simplifies heatsink sharing across multiple phases. | Use Scenario: Step-down switch in 24 V to 5 V/12 V isolated DC-DC module for PLC I/O modules. IC Role / Device Role / Timing Role: Primary-side MOSFET in forward converter with 290 V clamp voltage requirement. Use Value: 2.1 mJ avalanche energy rating eliminates need for external clamping circuits during transformer reset events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM50FP | 500 V VDSS, 20 A ID, 0.22 Ω RDS(on), TO-220FP package (non-isolated tab) | Higher voltage rating but higher on-resistance; lacks isolated heatsink tab | Select when 500 V bus margin is required and thermal interface allows insulating pad |
| IXTH16N25L2 | 250 V VDSS, 16 A ID, 0.12 Ω RDS(on), TO-247 package with isolated tab | Lower voltage rating, larger footprint, higher RDS(on); superior SOA at high Tj | Select when operating junction temperature exceeds 130 °C and layout permits TO-247 |
Compared with STP20NM50FP and IXTH16N25L2, the H5N2901FN-E delivers optimal balance of 290 V capability, 0.070 Ω conduction loss, and TO-220FN thermal integration-making it preferred for compact, high-efficiency 200–240 VAC-derived industrial power stages where board area and heatsink complexity are constrained.
Availability
H5N2901FN-E is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, uninterruptible power systems, and industrial DC-DC converters requiring stable component supply and long-term production continuity.
Supply support for H5N2901FN-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.
The H5N2901FN-E belongs to Renesas' high-voltage discrete MOSFET product line, engineered specifically for ruggedized industrial power conversion where reliability, thermal efficiency, and avalanche tolerance are critical.
FAQ
What is the maximum continuous drain current rating for the H5N2901FN-E?
The H5N2901FN-E is rated for 18 A continuous drain current (ID) at Tc = 25 °C. Derating applies above 25 °C case temperature per the power vs. temperature curve on page 3 of the datasheet; at 75 °C case temperature, the usable ID drops to approximately 12 A. This rating assumes proper heatsinking using the isolated TO-220FN tab.
Does the H5N2901FN-E have an electrically isolated heatsink tab?
Yes, the H5N2901FN-E uses the TO-220FN package with an electrically isolated metal tab (pin 2), which is internally connected to the drain but insulated from the mounting surface. This allows direct attachment to a common heatsink without requiring insulating washers or pads, simplifying thermal design and reducing assembly cost in multi-device power modules.
What is the gate threshold voltage range for the H5N2901FN-E?
The H5N2901FN-E has a gate-to-source cutoff voltage (VGS(off)) range of 3.0 V to 4.0 V at VDS = 10 V and ID = 1 mA. This threshold ensures reliable turn-on with standard 5 V logic drivers while providing adequate noise margin against spurious gate triggering in noisy industrial environments.
Can the H5N2901FN-E be used in avalanche mode, and what are its ratings?
Yes, the H5N2901FN-E is specified for single-pulse avalanche operation with IAP = 6 A and EAR = 2.1 mJ at Tch ≤ 150 °C. These values are measured under controlled conditions (Tch = 25 °C, STch = 25 °C); repeated avalanche stress is not recommended. The H5N2901FN-E's ruggedness supports inductive load switching without external snubbers in well-designed layouts.
What is the typical reverse recovery time of the body diode in the H5N2901FN-E?
The H5N2901FN-E body diode has a typical reverse recovery time (trr) of 190 ns under test conditions of IF = 18 A, dIF/dt = 100 A/µs, and VGS = 0 V. This value is confirmed in the Electrical Characteristics table on page 2 of the datasheet and supports efficient freewheeling in hard-switched topologies up to ~200 kHz.
H5N2901FN-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
H5N2901FN-E FAQ
1.How can I place an order for H5N2901FN-E through Aetrix?
Please submit a Request for Quotation (RFQ) for H5N2901FN-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for H5N2901FN-E reliable?
The price and inventory of H5N2901FN-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for H5N2901FN-E is usually 5 days.
3.What payment methods are accepted for H5N2901FN-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for H5N2901FN-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for H5N2901FN-E?
H5N2901FN-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your H5N2901FN-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for H5N2901FN-E?
For technical support, including H5N2901FN-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your H5N2901FN-E requirements.
6.How does Aetrix verify that H5N2901FN-E is sourced from the original manufacturer or authorized distributors?
All H5N2901FN-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that H5N2901FN-E meets industry standards.
7.What is the process for return or replacement of H5N2901FN-E?
All H5N2901FN-E units undergo pre-shipment inspection (PSI). If there is an issue with H5N2901FN-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The H5N2901FN-E part is unused and in its original packaging.
Return procedure for H5N2901FN-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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