Renesas H5N2901LSTL-E

Overview

H5N2901LSTL-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters, motor drivers, and industrial power supplies. It delivers 290 V V_DSS, 18 A continuous drain current, and 0.070 Ω typical R_DS(on) at V_GS = 10 V, enabling efficient high-voltage switching in compact TO-220FN packages.

For engineers reviewing the H5N2901LSTL-E datasheet, H5N2901LSTL-E pinout, H5N2901LSTL-E application, or H5N2901LSTL-E equivalent, key selection criteria include avalanche energy rating (2.1 mJ), gate charge (56 nC), body-diode reverse recovery time (190 ns), and thermal resistance (4.17 °C/W), all critical for hard-switched SMPS and inductive load control.

Technical Context

This MOSFET employs planar vertical DMOS architecture with optimized cell pitch and trench-free gate structure to achieve low R_DS(on) while maintaining robust 290 V breakdown voltage. Its gate threshold voltage range (3.0–4.0 V) ensures reliable turn-on with standard 5 V or 10 V logic-level drivers.

The device integrates a fast-recovery body diode (t_rr = 190 ns, Q_rr = 1.3 µC) and exhibits low output capacitance (C_oss = 300 pF at V_DS = 25 V), supporting high-frequency operation up to 500 kHz in resonant and hard-switched topologies.

Key Specifications

Pinout & Package

Supplied in TO-220FN package (EIAJ standard), featuring isolated tab for simplified heatsinking and surface-mount compatible footprint. The plastic body includes internal thermal enhancement and creepage/clearance compliant with IEC 60950-1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP20NM29 and IXTP26N20P, the H5N2901LSTL-E uniquely balances 290 V rating, 0.091 Ω R_DS(on) max, and isolated-tab thermal design-making it the only option among the three qualified for 240 VAC-derived 400 V bus applications requiring both voltage margin and thermal safety.

Availability

H5N2901LSTL-E is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, telecom DC-DC converters, and EV onboard charger stages requiring stable component supply and long-term production continuity.

Supply support for H5N2901LSTL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.

The H5N2901LSTL-E belongs to Renesas' legacy high-voltage power MOSFET product line, engineered for ruggedness and efficiency in industrial switching power applications where reliability under repetitive avalanche stress is essential.

FAQ

What is the maximum continuous drain current rating for the H5N2901LSTL-E?

The H5N2901LSTL-E has a maximum continuous drain current (I_D) of 18 A at T_c = 25 °C. This rating assumes proper heatsinking and derates linearly above 25 °C case temperature per the 4.17 °C/W thermal resistance. At 100 °C case temperature, the usable I_D drops to approximately 11.5 A to maintain T_ch ≤ 150 °C. The H5N2901LSTL-E must not exceed this limit in sustained operation.

Does the H5N2901LSTL-E support logic-level gate drive?

The H5N2901LSTL-E has a gate threshold voltage (V_GS(off)) range of 3.0–4.0 V, meaning it begins conducting significantly at ~3.5 V but requires ≥10 V V_GS to achieve its specified 0.070 Ω R_DS(on). While it will turn on with 5 V logic, full enhancement and low-loss operation demand 10 V gate drive. The H5N2901LSTL-E is not classified as a true logic-level MOSFET.

What is the avalanche energy rating of the H5N2901LSTL-E and how is it applied in circuit design?

The H5N2901LSTL-E is rated for 2.1 mJ single-pulse avalanche energy (E_AR) at T_ch = 25 °C. This specification permits safe operation during transient overvoltage events-such as inductive kickback in relay or solenoid drivers-without destructive failure. Designers use this value to size snubberless inductive loads or verify margin against expected stored energy (½·L·I²). The H5N2901LSTL-E must not be subjected to repeated avalanche unless validated per Renesas' application notes.

How does the TO-220FN package of the H5N2901LSTL-E differ from standard TO-220AB?

The TO-220FN package used by the H5N2901LSTL-E features an electrically isolated metal tab, unlike the conductive tab in TO-220AB. This isolation eliminates the need for insulating pads or washers when mounting to grounded heatsinks, simplifying thermal design and improving long-term reliability. The H5N2901LSTL-E's TO-220FN also includes optimized leadframe geometry for lower inductance and higher creepage distance (≥4 mm) versus standard TO-220AB.

Can the H5N2901LSTL-E be used in synchronous rectification applications?

Yes-the H5N2901LSTL-E includes a fast-recovery body diode with t_rr = 190 ns and Q_rr = 1.3 µC, making it suitable for synchronous rectification in forward and LLC converters up to ~300 kHz. However, its R_DS(on) is higher than dedicated SR MOSFETs, so optimal performance requires precise gate timing to avoid shoot-through. For best results in high-efficiency designs, the H5N2901LSTL-E should be paired with a dedicated SR controller that accounts for its specific V_GS(th) and Q_g.