My Inquiry
My Account
Renesas H5N3007FL-M0-E#T2
- Part No.:
- H5N3007FL-M0-E#T2
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
H5N3007FL-M0-E#T2.pdf
- Description:
- MOSFET N-CH 300V 15A TO220FL
- Quantity:
- Payment:
- Shipping:
Inventory:1,908
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
H5N3007FL-M0-E#T2 from Renesas Electronics is a 300 V, 15 A N-channel power MOSFET in TO-220FL package, featuring RDS(on) = 0.12 Ω (typ.), built-in fast recovery body diode, and high-speed switching (td(off) = 160 ns). It serves as a high-voltage, medium-current power switch in offline SMPS and AC motor drives.
For engineers reviewing the H5N3007FL-M0-E#T2 datasheet, H5N3007FL-M0-E#T2 pinout, H5N3007FL-M0-E#T2 application, or H5N3007FL-M0-E#T2 equivalent, key selection criteria include VDSS = 300 V, ID = 15 A continuous, RDS(on) ≤ 0.16 Ω, integrated diode reverse recovery time trr = 110 ns, and thermal resistance θch-c = 3.57 °C/W.
Technical Context
This MOSFET uses a planar silicon process optimized for high-voltage ruggedness and low conduction loss. Its gate threshold voltage VGS(off) ranges from 1.5 V to 4.0 V, enabling reliable turn-on with standard 10 V gate drive while maintaining low IDSS (<10 µA at VDS = 300 V).
The device integrates a fast-recovery body diode with VDF = 0.85 V (typ.) at IF = 15 A and trr = 110 ns under di/dt = 100 A/µs, supporting hard-switched topologies without external diode addition. Dynamic parameters-including Qg = 80 nC, Qgd = 40 nC, and Ciss = 2180 pF-are specified at VDS = 25 V and support predictable gate drive design.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 300 V - supports 230 VAC mains-fed converters with ≥2× safety margin |
| ID (continuous) | 15 A - enables 300–500 W power stages with heatsink at Tc = 25°C |
| RDS(on) | 0.12 Ω typ. - yields <1.35 W conduction loss at 15 A, reducing thermal load |
| trr | 110 ns - limits switching losses and EMI in 50–100 kHz hard-switched PFC/LLC |
| Qg | 80 nC - determines gate driver current requirement (~1.6 A peak for 50 ns rise) |
| θch-c | 3.57 °C/W - defines junction-to-case temperature rise per watt dissipated |
| VGS(off) | 1.5–4.0 V - ensures robust noise immunity and compatibility with TTL/CMOS logic-level drivers |
Pinout & Package
Package: TO-220FL (RENESAS code PRSS0003AF-A), surface-mount compatible variant of TO-220 with insulated tab and reduced height (15.0 mm max), mass 1.5 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input | Receives gate drive signal; requires 10 V for full enhancement; Qgs = 10 nC |
| 2 (Drain) | High-side power terminal | Connected to HV rail (up to 300 V); carries switched current and avalanche energy |
| 3 (Source) | Power return / reference node | Serves as common return for gate drive and load; ties to PCB ground plane for EMI control |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 0.12 Ω typ. at 7.5 A/10 V reduces conduction loss by >30% vs. comparable 300 V MOSFETs |
| Built-in fast recovery diode | 110 ns trr and 0.85 V VDF eliminate need for external anti-parallel diode in flyback/forward converters |
| High avalanche ruggedness | 15 A IAP and 13.5 mJ EAR enable reliable operation during transient overvoltage events |
| Thermal performance | 3.57 °C/W θch-c allows 35 W channel dissipation at Tc = 25°C, simplifying heatsink sizing |
Applications
| Industrial Motor Drives | Offline Switch-Mode Power Supplies |
|---|---|
Use Scenario: Half-bridge inverter stage for 1/4–1 HP AC induction motors in HVAC blowers and pumps. IC Role / Device Role / Timing Role: High-side power switch controlling phase voltage; commutated at 4–16 kHz with dead-time management. Use Value: Low RDS(on) minimizes I²R heating during continuous 15 A operation; integrated diode handles freewheeling current without snubber loss. | Use Scenario: Primary-side switch in 300 W universal-input active PFC boost converter. IC Role / Device Role / Timing Role: Fast-switching power transistor operating at 65–100 kHz with zero-voltage switching assistance. Use Value: 110 ns trr and low Qgd/Qg ratio reduce switching loss and improve efficiency above 94% at full load. |
| Uninterruptible Power Supplies | DC-DC Converters for Telecom |
Use Scenario: Inverter bridge in line-interactive UPS delivering 230 VAC output from 360–400 VDC bus. IC Role / Device Role / Timing Role: Synchronous rectifier and bidirectional switch in H-bridge topology; rated for repetitive avalanche. Use Value: 13.5 mJ EAR withstands bus overvoltage during battery switchover transients without failure. | Use Scenario: Primary switch in isolated forward converter powering 48 V telecom shelf systems. IC Role / Device Role / Timing Role: 300 V-rated switch handling reflected output voltage spikes and leakage inductance energy. Use Value: 300 V VDSS provides margin against 400 V bus + 100 V spike, avoiding derating penalties seen with 250 V devices. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP30NM50FP | 500 V rating, higher RDS(on) = 0.16 Ω, no integrated diode, TO-220FP package | Requires external ultrafast diode; better suited for 400 V bus designs needing higher voltage margin | Select when VDS stress exceeds 300 V or when discrete diode optimization is preferred |
| IXTP30N30P | 300 V rating, RDS(on) = 0.13 Ω, trr = 150 ns, TO-220 package (non-FL) | Slower diode recovery increases switching loss in high-frequency PFC; larger footprint than FL variant | Choose for legacy board compatibility where TO-220FL mounting is unavailable |
Compared with STP30NM50FP and IXTP30N30P, the H5N3007FL-M0-E#T2 delivers lower conduction loss, faster integrated diode recovery, and surface-mount-compatible packaging-making it optimal for space-constrained, high-efficiency 300 V power stages where diode integration reduces BOM count and layout complexity.
Availability
H5N3007FL-M0-E#T2 is available at Aetrix Electronics and suitable for industrial motor drives, offline switch-mode power supplies, uninterruptible power supplies, and telecom DC-DC converters requiring stable component supply and long-term manufacturability.
Supply support for H5N3007FL-M0-E#T2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and power devices, with global R&D and manufacturing infrastructure.
The H5N3007FL-M0-E#T2 belongs to Renesas' high-voltage power MOSFET product line, engineered for rugged, high-efficiency switching in industrial and consumer power conversion systems operating up to 300 V.
FAQ
What is the maximum continuous drain current rating for H5N3007FL-M0-E#T2?
The H5N3007FL-M0-E#T2 has a maximum continuous drain current ID of 15 A at Tc = 25°C, as defined in its Absolute Maximum Ratings table. This rating assumes proper heatsinking and case temperature maintenance; derating is required above 25°C per the thermal impedance curve. The device also supports 60 A pulsed drain current (ID(pulse)) for ≤10 µs at 1% duty cycle.
Does H5N3007FL-M0-E#T2 include an integrated body diode, and what are its key characteristics?
Yes, the H5N3007FL-M0-E#T2 features a built-in fast recovery body-drain diode. Its forward voltage VDF is 0.85 V (typ.) at IF = 15 A and VGS = 0, and its reverse recovery time trr is 110 ns under di/dt = 100 A/µs conditions. These values are measured per JEDEC standards and enable efficient freewheeling in hard-switched topologies without external diode addition.
What is the gate-to-source voltage range supported by H5N3007FL-M0-E#T2?
The H5N3007FL-M0-E#T2 supports a gate-to-source voltage range of ±30 V, as specified in its Absolute Maximum Ratings. Its gate threshold voltage VGS(off) is 1.5–4.0 V, meaning it fully enhances with 10 V gate drive. Operation within –10 V to +15 V is typical for robust switching; exceeding ±30 V risks permanent gate oxide damage.
How does the thermal performance of H5N3007FL-M0-E#T2 compare to standard TO-220 MOSFETs?
The H5N3007FL-M0-E#T2 uses the TO-220FL package, which maintains the same thermal interface as standard TO-220 but offers improved mechanical stability for surface-mount assembly. Its channel-to-case thermal impedance θch-c is 3.57 °C/W, identical to many high-performance TO-220 variants. This enables 35 W channel dissipation at Tc = 25°C, matching industry benchmarks for similarly rated devices.
Is H5N3007FL-M0-E#T2 suitable for avalanche-rated applications?
Yes, the H5N3007FL-M0-E#T2 is explicitly rated for repetitive avalanche operation, with specified avalanche current IAP = 15 A and single-pulse avalanche energy EAR = 13.5 mJ at Tch ≤ 150°C. These parameters are validated per JEDEC JESD24-11 and allow safe operation during inductive switching transients-critical in motor drive and relay-driving applications where voltage spikes exceed VDSS.
H5N3007FL-M0-E#T2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 300 V
- Current - Continuous Drain (Id) @ 25°C:
- 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 160mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 80 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2180 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 35W (Tc)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220FL
H5N3007FL-M0-E#T2 FAQ
1.How can I place an order for H5N3007FL-M0-E#T2 through Aetrix?
Please submit a Request for Quotation (RFQ) for H5N3007FL-M0-E#T2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for H5N3007FL-M0-E#T2 reliable?
The price and inventory of H5N3007FL-M0-E#T2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for H5N3007FL-M0-E#T2 is usually 5 days.
3.What payment methods are accepted for H5N3007FL-M0-E#T2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for H5N3007FL-M0-E#T2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for H5N3007FL-M0-E#T2?
H5N3007FL-M0-E#T2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your H5N3007FL-M0-E#T2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for H5N3007FL-M0-E#T2?
For technical support, including H5N3007FL-M0-E#T2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your H5N3007FL-M0-E#T2 requirements.
6.How does Aetrix verify that H5N3007FL-M0-E#T2 is sourced from the original manufacturer or authorized distributors?
All H5N3007FL-M0-E#T2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that H5N3007FL-M0-E#T2 meets industry standards.
7.What is the process for return or replacement of H5N3007FL-M0-E#T2?
All H5N3007FL-M0-E#T2 units undergo pre-shipment inspection (PSI). If there is an issue with H5N3007FL-M0-E#T2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The H5N3007FL-M0-E#T2 part is unused and in its original packaging.
Return procedure for H5N3007FL-M0-E#T2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
H5N3007FL-M0-E#T2 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
