Renesas H5N3011P80-E#T2

Overview

H5N3011P80-E#T2 from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters, motor drives, and industrial power supplies. It delivers 300 V V_DSS, 88 A continuous drain current (I_D), and low R_DS(on) of 0.042 Ω at V_GS = 10 V, housed in a TO-3P package with flanged drain for enhanced thermal dissipation.

For engineers reviewing the H5N3011P80-E#T2 datasheet, H5N3011P80-E#T2 pinout, H5N3011P80-E#T2 application, or H5N3011P80-E#T2 equivalent, key selection criteria include avalanche energy rating (54 mJ), gate charge (95 nC), body-diode reverse recovery time (260 ns), and thermal impedance (0.833 °C/W) - all critical for hard-switched SMPS and high-current PWM designs.

Technical Context

This MOSFET employs a planar vertical DMOS structure optimized for ruggedness and fast switching. Its gate threshold voltage (V_GS(off)) ranges from 3.0 to 4.5 V, enabling reliable turn-on with standard 10 V gate drivers. The device supports unclamped inductive switching with specified I_AP = 30 A and E_AR = 54 mJ under defined conditions.

Thermal performance is defined by channel-to-case thermal impedance θ_ch-c = 0.833 °C/W, validated at T_c = 25°C, and derating curves confirm usable power dissipation up to 150 W at case temperatures ≤75°C. Body-diode forward voltage is 1.0–1.5 V at 88 A, supporting synchronous rectification and freewheeling roles in half-bridge topologies.

Key Specifications

Pinout & Package

Package: TO-3P (JEDEC-standard flanged metal package, 5.0 g mass, 19.9 mm × 15.6 mm footprint). Flange is electrically connected to Drain (Pin 2) and serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-current power switching applications.

Compared with STW30NM50FD and IXFH88N30P, the H5N3011P80-E#T2 uniquely combines 88 A current capability, 0.042 Ω R_DS(on), and TO-3P flanged drain in a single package - delivering superior thermal transfer and system-level reliability for high-power industrial inverters where mechanical robustness and thermal stability are non-negotiable.

Availability

H5N3011P80-E#T2 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, uninterruptible power systems, and welding inverters requiring stable component supply across multi-year production cycles.

Supply support for H5N3011P80-E#T2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and mixed-signal solutions.

The H5N3011P80-E#T2 belongs to Renesas' high-power discrete MOSFET product line, engineered specifically for rugged, high-efficiency power conversion in industrial automation, energy infrastructure, and heavy-duty power electronics.

FAQ

What is the maximum continuous drain current rating for H5N3011P80-E#T2 at 25°C case temperature?

The H5N3011P80-E#T2 is rated for 88 A continuous drain current (I_D) at T_c = 25°C, as specified in the Absolute Maximum Ratings table. This rating assumes proper heatsinking and adherence to the derating curve - at 75°C case temperature, the allowable current reduces to approximately 65 A per the Power vs. Temperature Derating graph on page 3 of the datasheet.

Does H5N3011P80-E#T2 support avalanche operation, and what are its limits?

Yes, the H5N3011P80-E#T2 is characterized for unclamped inductive switching with an avalanche current (I_AP) of 30 A and single-pulse avalanche energy (E_AR) of 54 mJ at T_ch ≤ 150°C and T_st = 25°C. These values are measured under standardized test conditions (Note 3) and define safe operating boundaries for transient overvoltage events - repeated avalanche stress beyond these limits may degrade reliability.

What is the gate-to-source threshold voltage range for H5N3011P80-E#T2, and how does it vary with temperature?

The H5N3011P80-E#T2 has a gate-to-source cutoff voltage (V_GS(off)) ranging from 3.0 V to 4.5 V at T_a = 25°C, with typical value ~3.8 V. As shown on page 5 of the datasheet, V_GS(off) decreases linearly with increasing case temperature - from ~4.1 V at −25°C to ~3.3 V at 125°C - ensuring stable turn-on behavior across industrial temperature ranges.

Can H5N3011P80-E#T2 be used in synchronous rectification applications, and what body-diode parameters matter most?

Yes, the H5N3011P80-E#T2 can serve in synchronous rectification due to its integrated body diode, which exhibits V_DF = 1.0–1.5 V at 88 A and reverse recovery time t_rr = 260 ns. Critical parameters include Q_rr = 2.5 µC and softness factor (not explicitly given but implied by trr waveform shape), both influencing commutation loss and EMI generation - optimal gate timing must account for this recovery behavior to avoid shoot-through.

What is the thermal resistance from channel to case (θ_ch-c) for H5N3011P80-E#T2, and how is it measured?

The channel-to-case thermal resistance (θ_ch-c) of the H5N3011P80-E#T2 is 0.833 °C/W, measured under steady-state conditions at T_c = 25°C with the device mounted on a large copper heatsink per JEDEC JESD51-2. This value reflects conduction-only path from silicon die to flange surface and excludes interface resistance - actual system θ_ja depends on heatsink design, thermal interface material, and airflow.