Renesas H7N1004FN-E

Overview

H7N1004FN-E from Renesas Electronics is a silicon N-channel MOSFET designed for high-speed power switching in DC-DC converters, motor drivers, and industrial SMPS. It features 100 V V_DSS, 25 mΩ typ. R_DS(on) at V_GS = 10 V, 25 A continuous drain current, and TO-220FN package with isolated heatsink tab - enabling efficient 48 V bus-side switching in telecom and industrial power supplies.

For engineers reviewing the H7N1004FN-E datasheet, H7N1004FN-E pinout, H7N1004FN-E application, or H7N1004FN-E equivalent, key selection criteria include its 4.5 V gate drive compatibility, 15 A avalanche current rating, body diode reverse recovery time of 45 ns, and thermal resistance (θ_ch-c = 5°C/W) for conduction-limited operation in high-reliability power stages.

Technical Context

This MOSFET employs planar vertical DMOS architecture optimized for low conduction loss and fast switching. Its gate charge profile (Q_g = 50 nC, Q_gd = 11 nC) supports hard-switched topologies up to 200 kHz while maintaining low E_off. The integrated body diode exhibits soft recovery (trr = 45 ns, di_F/dt = 100 A/µs), reducing voltage overshoot in synchronous rectification.

Rated for 150°C channel temperature and specified with R_DS(on) at both 4.5 V and 10 V gate drive, the H7N1004FN-E supports logic-level and standard gate drive systems. Its TO-220FN package provides electrical isolation between drain and mounting surface, allowing direct heatsink attachment without insulating hardware.

Key Specifications

Pinout & Package

Package: TO-220FN (RENESAS code PRSS0003AB-A), thermally enhanced variant with electrically isolated drain tab for direct heatsink mounting. Mass: 2.0 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed power switching applications.

Compared with STP110N10F7 and IRF540NPBF, the H7N1004FN-E offers optimal balance of 4.5 V drivability, isolated thermal interface, and documented avalanche capability - making it preferred for compact, reliability-critical industrial power stages where layout simplicity and transient robustness are prioritized over raw current rating.

Availability

H7N1004FN-E is available at Aetrix Electronics and suitable for industrial DC-DC converters, telecom power supplies, and motor drive half-bridges requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from authorized channels.

Supply support for H7N1004FN-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

The H7N1004FN-E belongs to Renesas' high-voltage discrete MOSFET product line, engineered for rugged, high-efficiency power conversion in industrial automation, telecom infrastructure, and uninterruptible power systems.

FAQ

What is the maximum gate-to-source voltage rating for H7N1004FN-E?

The H7N1004FN-E has a maximum gate-to-source voltage (V_GSS) rating of ±20 V. Exceeding this limit risks permanent gate oxide damage. Designers must ensure gate drive circuits - including transient spikes from parasitic inductance - remain within this range. For robust operation, Renesas recommends limiting steady-state V_GS to ≤15 V and using Zener clamping if driving from higher-voltage sources. This specification is confirmed in the Absolute Maximum Ratings table on page 1 of the REJ03G5193-0100 datasheet.

Does H7N1004FN-E support logic-level gate drive at 4.5 V?

Yes, the H7N1004FN-E is explicitly characterized for 4.5 V gate drive, with R_DS(on) guaranteed at 30 mΩ max. under ID = 12.5 A, V_GS = 4.5 V conditions. This enables direct connection to 5 V microcontrollers, CPLDs, or dedicated gate drivers without level-shifting circuitry. The device's V_GS(off) range (1.5–2.5 V) ensures full enhancement well below 4.5 V, supporting reliable turn-on even with marginal drive margins.

What is the thermal resistance from channel to case (θ_ch-c) for H7N1004FN-E?

The H7N1004FN-E has a channel-to-case thermal resistance (θ_ch-c) of 5°C/W, measured under standard test conditions (T_c = 25°C). This value is critical for calculating junction temperature rise under load and is validated in the Power vs. Temperature Derating graph on page 3 of the datasheet. When mounted to a heatsink with low thermal interface resistance, this enables 25 W continuous power dissipation before reaching the 150°C maximum channel temperature.

Is the TO-220FN package of H7N1004FN-E electrically isolated?

Yes, the TO-220FN package used by the H7N1004FN-E features an electrically isolated drain tab - meaning the metal mounting surface (drain) is insulated from the internal die substrate. This eliminates the need for insulating hardware such as mica washers or thermal pads with dielectric fillers. The isolation withstands ≥1500 V AC per JEITA standards, verified in Renesas' package qualification testing and documented in the Package Dimensions section (page 7) of REJ03G5193-0100.

What is the body diode reverse recovery time (trr) of H7N1004FN-E, and why does it matter?

The H7N1004FN-E body diode has a reverse recovery time (t_rr) of 45 ns, measured at I_F = 25 A, di_F/dt = 100 A/µs, and V_GS = 0. This fast, soft recovery characteristic reduces voltage overshoot and EMI during commutation in synchronous rectifiers and half-bridge configurations. It directly enables higher switching frequencies and lower snubber losses compared to standard MOSFETs with slower diodes - a key advantage confirmed in the Electrical Characteristics table (page 2) and Switching Characteristics chart (page 4) of the datasheet.