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Renesas H7N1004FN-E-A9#B0F
- Part No.:
- H7N1004FN-E-A9#B0F
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
H7N1004FN-E-A9#B0F.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:7,000
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Product details
Overview
H7N1004FN-E-A9#B0F from Renesas Electronics is a silicon N-channel MOSFET designed for high-speed power switching in DC-DC converters and motor drive circuits, featuring 100 V VDSS, 25 A continuous drain current (ID), 25 mΩ typical RDS(on) at VGS = 10 V, and TO-220FN package with isolated heatsink tab.
For engineers reviewing the H7N1004FN-E-A9#B0F datasheet, H7N1004FN-E-A9#B0F pinout, H7N1004FN-E-A9#B0F application, or H7N1004FN-E-A9#B0F equivalent, key selection criteria include gate threshold voltage (1.5–2.5 V), low 4.5 V gate drive compatibility, avalanche energy rating (22.5 mJ), body-diode reverse recovery time (45 ns), and thermal resistance (5°C/W junction-to-case).
Technical Context
This MOSFET employs planar vertical DMOS structure optimized for fast switching and low conduction loss. Its gate charge profile (Qg = 50 nC, Qgd = 11 nC) supports efficient hard-switching operation up to several hundred kHz in synchronous buck topologies.
The integrated body diode exhibits low forward voltage (VDF = 0.89 V at IF = 25 A) and controlled reverse recovery (trr = 45 ns), enabling use in freewheeling paths without external Schottky supplementation in medium-frequency SMPS designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Maximum blocking voltage for primary-side switching in 48 V input systems or 24 V industrial rails. |
| RDS(on) @ VGS = 10 V | 25 mΩ typ. - Enables ≤0.78 W conduction loss at 25 A, supporting thermally constrained PCB layouts. |
| RDS(on) @ VGS = 4.5 V | 30 mΩ max. - Ensures reliable turn-on with standard logic-level drivers (e.g., microcontroller GPIO or dedicated gate drivers). |
| Qg | 50 nC - Determines gate driver power requirement; compatible with common 1–2 A peak gate drivers. |
| tr/tf | 110 ns / 9.5 ns - Supports <500 kHz switching in non-resonant topologies while limiting EMI generation. |
| EAR | 22.5 mJ - Specifies single-pulse avalanche capability under inductive load interruption (e.g., relay coil snubbing or motor phase commutation). |
| θJC | 5°C/W - Defines thermal path efficiency from channel to case; requires direct mechanical mounting to heatsink for sustained 25 A operation. |
Pinout & Package
Package: TO-220FN (RENESAS code PRSS0003AB-A), featuring electrically isolated metal tab for direct heatsink mounting without insulating washer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives gate drive signal; requires ≤±20 V bias; low input capacitance (Ciss = 2800 pF) minimizes driver loading. |
| 2 (Drain) | High-side power terminal | Connected to input rail or inductive load; rated for 100 V blocking and 100 A pulsed current (10 µs). |
| 3 (Source) | Reference node | Serves as return path for load current; tied to ground or low-side switch source; enables Kelvin sensing in precision applications. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 4.5 V drive | 30 mΩ max. ensures full enhancement with 3.3 V/5 V logic-compatible gate drivers, eliminating level-shifting circuitry. |
| Fast switching with low Qgd/Qg ratio | Qgd/Qg ≈ 22% reduces Miller-induced shoot-through risk and improves controllability in half-bridge configurations. |
| Robust body diode | 45 ns trr and 0.89 V VDF enable reliable freewheeling in synchronous rectification and H-bridge motor control without external diodes. |
| Avalanche-rated operation | 15 A IAP and 22.5 mJ EAR support unclamped inductive switching in relay drivers and solenoid controls without snubber networks. |
| Thermally optimized package | TO-220FN's isolated tab delivers 5°C/W θJC, allowing 25 W continuous dissipation with modest heatsinking (e.g., 10 cm² aluminum fin). |
Applications
| DC-DC Converters | Motor Drive Stages |
|---|---|
|
Use Scenario: Primary-side switch in 48 V input, 12 V output synchronous buck converter for telecom power supplies. IC Role / Device Role / Timing Role: High-side power switch operating at 300 kHz with 50% duty cycle; handles 25 A peak inductor current. Use Value: 25 mΩ RDS(on) limits conduction loss to 0.78 W, reducing thermal stress and enabling compact heatsink design. |
Use Scenario: Low-side switch in 24 V brushed DC motor H-bridge for industrial actuators. IC Role / Device Role / Timing Role: PWM-controlled power stage with 20 kHz switching; conducts bidirectional current during direction reversal. Use Value: 45 ns body-diode trr prevents cross-conduction losses during dead-time transitions, improving efficiency by ~3% over standard MOSFETs. |
| Power Inverters | Industrial Relay Drivers |
|
Use Scenario: Half-bridge leg in 100 V DC link solar microinverter output stage. IC Role / Device Role / Timing Role: Fast-switching device handling 12.5 A RMS current; operates with 100 ns rise/fall times to minimize switching loss. Use Value: 50 nC total gate charge enables clean edge control using low-cost 1.5 A gate drivers, reducing BOM cost vs. high-current alternatives. |
Use Scenario: Snubberless inductive load switch for 24 V PLC output modules driving 100 mA–2 A solenoids. IC Role / Device Role / Timing Role: Unclamped inductive turn-off switch; absorbs stored energy via avalanche mode. Use Value: 22.5 mJ avalanche energy rating eliminates need for external TVS/clamp diodes, simplifying PCB layout and improving reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP100NF10 | RDS(on) = 12.5 mΩ @ 10 V but requires 10 V min. gate drive; no specified avalanche rating. | Better conduction loss at high gate voltage; unsuitable for 4.5 V drive or unclamped inductive loads. | Choose STP100NF10 only when gate drive ≥10 V is guaranteed and avalanche robustness is not required. |
| IRF540N | RDS(on) = 44 mΩ @ 10 V; higher Qg (71 nC); TO-220AB (non-isolated tab). | Higher conduction and switching losses; requires insulating hardware for heatsink mounting. | Select IRF540N only for cost-sensitive, low-frequency (<100 kHz), non-isolated thermal designs where performance margin is acceptable. |
Compared with STP100NF10 and IRF540N, H7N1004FN-E-A9#B0F uniquely balances 4.5 V drive compatibility, 22.5 mJ avalanche capability, and TO-220FN isolation-making it optimal for space-constrained, medium-frequency industrial power stages requiring robustness and simplified thermal management.
Availability
H7N1004FN-E-A9#B0F is available at Aetrix Electronics and suitable for DC-DC converters, motor drive stages, and industrial relay drivers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production programs.
Supply support for H7N1004FN-E-A9#B0F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.
H7N1004FN-E-A9#B0F belongs to Renesas' legacy high-voltage power MOSFET product line, engineered for ruggedized industrial power conversion where reliability under transient stress and thermal stability are critical.
FAQ
What is the maximum gate-to-source voltage rating for H7N1004FN-E-A9#B0F?
The absolute maximum gate-to-source voltage (VGSS) for H7N1004FN-E-A9#B0F is ±20 V. Exceeding this rating risks permanent gate oxide damage. Designers must ensure gate drive circuits include clamping (e.g., Zener diodes) to limit transients, especially in noisy industrial environments where ringing may push VGS beyond safe margins during switching transitions.
Does H7N1004FN-E-A9#B0F support logic-level gate drive?
Yes, H7N1004FN-E-A9#B0F is fully characterized for 4.5 V gate drive, with RDS(on) guaranteed at ≤45 mΩ under those conditions. This allows direct interfacing with 3.3 V or 5 V microcontrollers and gate drivers without level-shifting circuitry, simplifying design and reducing component count in cost-sensitive applications.
What is the thermal resistance from junction to case for H7N1004FN-E-A9#B0F?
H7N1004FN-E-A9#B0F has a junction-to-case thermal resistance (θJC) of 5°C/W, measured under standard test conditions (Tc = 25°C). This value assumes direct metal-to-metal contact between the isolated TO-220FN tab and a heatsink; thermal interface material selection and mounting pressure significantly affect real-world performance.
Can H7N1004FN-E-A9#B0F be used in avalanche mode repeatedly?
H7N1004FN-E-A9#B0F is rated for repetitive avalanche energy (EAR) of 22.5 mJ at Tch = 25°C with Rg ≥ 50 Ω. While designed for single-pulse robustness, repeated operation near this limit accelerates wear; designers should verify pulse frequency, duty cycle, and thermal derating per the datasheet's avalanche energy vs. channel temperature curve to ensure long-term reliability.
What is the body-diode reverse recovery time of H7N1004FN-E-A9#B0F?
The body-diode reverse recovery time (trr) of H7N1004FN-E-A9#B0F is 45 ns, measured at IF = 25 A, VGS = 0, and diF/dt = 100 A/µs. This fast recovery characteristic reduces switching losses and voltage spikes in freewheeling paths, making H7N1004FN-E-A9#B0F suitable for high-frequency synchronous rectification without external Schottky diodes.
H7N1004FN-E-A9#B0F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
H7N1004FN-E-A9#B0F FAQ
1.How can I place an order for H7N1004FN-E-A9#B0F through Aetrix?
Please submit a Request for Quotation (RFQ) for H7N1004FN-E-A9#B0F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for H7N1004FN-E-A9#B0F reliable?
The price and inventory of H7N1004FN-E-A9#B0F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for H7N1004FN-E-A9#B0F is usually 5 days.
3.What payment methods are accepted for H7N1004FN-E-A9#B0F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for H7N1004FN-E-A9#B0F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for H7N1004FN-E-A9#B0F?
H7N1004FN-E-A9#B0F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your H7N1004FN-E-A9#B0F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for H7N1004FN-E-A9#B0F?
For technical support, including H7N1004FN-E-A9#B0F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your H7N1004FN-E-A9#B0F requirements.
6.How does Aetrix verify that H7N1004FN-E-A9#B0F is sourced from the original manufacturer or authorized distributors?
All H7N1004FN-E-A9#B0F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that H7N1004FN-E-A9#B0F meets industry standards.
7.What is the process for return or replacement of H7N1004FN-E-A9#B0F?
All H7N1004FN-E-A9#B0F units undergo pre-shipment inspection (PSI). If there is an issue with H7N1004FN-E-A9#B0F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The H7N1004FN-E-A9#B0F part is unused and in its original packaging.
Return procedure for H7N1004FN-E-A9#B0F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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