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Renesas HAT1035R-EL-E
- Part No.:
- HAT1035R-EL-E
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
HAT1035R-EL-E.pdf
- Description:
- P-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:4,180
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Product details
Overview
HAT1035R-EL-E from Renesas Electronics is a silicon P-channel power MOSFET designed for high-speed power switching in low-current DC control paths. It features –150 V drain-to-source breakdown voltage, 7.0–10.0 Ω RDS(on) at –1 A and –5 V gate drive, –4 V gate threshold capability, and SOP-8 (FP-8DAV) surface-mount packaging. It is used in compact relay replacement circuits and low-power load switching in industrial control modules.
For engineers reviewing the HAT1035R-EL-E datasheet, HAT1035R-EL-E pinout, HAT1035R-EL-E application, or HAT1035R-EL-E equivalent, key selection criteria include verified –150 V blocking rating, gate-drive compatibility down to –4 V, thermal derating on FR4 boards, and body-diode recovery time of 80 ns under defined di/dt conditions.
Technical Context
This device operates as a single P-channel enhancement-mode MOSFET with depletion-free channel conduction. Its gate structure enables reliable turn-on with –4 V drive, eliminating need for negative-voltage charge pumps in low-side switch configurations. The integrated body diode supports bidirectional current handling in flyback or clamping topologies.
Thermal performance is specified for two PCB mounting conditions: 1 W dissipation on single-layer FR4 (40 × 40 × 1.6 mm) with 1 drive, and 1.5 W with 2 drive. Capacitance parameters (Ciss = 92 pF, Coss = 37 pF, Crss = 10 pF) support fast switching with minimal Miller effect in <1 MHz applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | –150 V - supports DC bus isolation up to –150 V without avalanche breakdown |
| RDS(on) | 7.0–10.0 Ω @ –1 A, –5 V - defines conduction loss in low-current (<250 mA continuous) switching paths |
| VGS(off) | –1.0 to –2.0 V - ensures full enhancement-mode cutoff with ≥+1 V gate margin at 25°C |
| tr/tf | 13 ns / 15 ns - enables clean edge transitions in sub-10 MHz PWM control without excessive EMI |
| trr | 80 ns - limits reverse recovery losses when used with inductive loads under 50 A/µs di/dt |
| Pch | 1.5 W @ 2-drive FR4 board - sets maximum continuous power handling with standard PCB heatsinking |
| Ciss | 92 pF - determines gate drive strength requirement for <100 ns switching transitions |
Pinout & Package
Package: SOP-8 (JEITA FP-8DAV), Renesas code PRSP0008DD-D, 3.95 × 4.9 mm footprint, 1.27 mm pitch, Ni/Pd/Au-plated terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 3 | Source | Common source node for both internal MOSFETs; tied to system ground or negative rail in high-side switch configuration |
| 2, 4 | Gate | Control input for each MOSFET; requires –4 V to –15 V swing relative to source for full enhancement |
| 5, 6, 7, 8 | Drain | Parallel-connected drain terminals; carry switched load current and support shared thermal path to PCB copper |
Key Features
| Feature | Design Value |
|---|---|
| Low drive current requirement | Enables direct interface with microcontroller GPIOs without external buffer stages due to ≤10 µA IGSS leakage |
| –4 V gate drive capability | Permits use with single-supply logic (e.g., 5 V or 3.3 V MCU) driving gate through inverting level shifter or open-drain driver |
| High-density mounting | SOP-8 package allows >2× component density vs. TO-220 in space-constrained industrial I/O modules |
| Body-diode forward voltage | VDF = –0.9 to –1.4 V @ –0.25 A - reduces clamping loss in inductive load snubbing applications |
| Low RDS(on) variation | ±15% typical spread across production lot - simplifies thermal margining in batch-manufactured equipment |
Applications
| Industrial Relay Replacement | Low-Power Load Switching |
|---|---|
Use Scenario: Replacing electromechanical relays in PLC output modules where cycle life, shock resistance, and silent operation are required. IC Role / Device Role / Timing Role: High-side load switch controlling 24 V DC solenoids or indicator LEDs with <250 mA peak current. Use Value: Eliminates contact wear and bounce; enables 100 kHz PWM dimming of status indicators without relay arcing. |
Use Scenario: Power gating of auxiliary subsystems (e.g., sensor bias rails, display backlight) in battery-powered handheld instruments. IC Role / Device Role / Timing Role: P-channel load switch enabling controlled power-up/down sequencing with <1 µA off-state leakage. Use Value: Reduces standby current by >95% vs. LDO-based always-on solutions while maintaining fast enable response. |
| DC Motor Direction Control | Overvoltage Protection Clamp |
Use Scenario: Half-bridge upper-leg switch in 12 V brushed DC motor drivers for small actuators in HVAC dampers or medical fluid pumps. IC Role / Device Role / Timing Role: Synchronized high-side switch operating with complementary N-channel low-side FET in 20–50 kHz PWM mode. Use Value: Supports bidirectional current via body diode during dead-time; 80 ns trr prevents shoot-through in <500 ns dead-time designs. |
Use Scenario: Transient voltage clamp in 24 V industrial fieldbus nodes exposed to inductive switching noise on RS-485 or CAN lines. IC Role / Device Role / Timing Role: Standby-mode Zener-like clamp using V(BR)DSS = –150 V and low leakage IDSS ≤ –5 µA. Use Value: Absorbs ±100 V transients without crowbar action; maintains system uptime during EFT bursts per IEC 61000-4-4 Level 4. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si2301DS-T1-E3 (Vishay) | –20 V VDSS, 0.115 Ω RDS(on) @ –2.5 A, SOT-23 package | Lower voltage rating; suited only for ≤–12 V systems; higher current capacity but smaller thermal mass | Select when board space is critical and bus voltage remains ≤–12 V; not suitable for –24 V or –48 V backplanes |
| IRF9540NPbF (Infineon) | –100 V VDSS, 0.2 Ω RDS(on) @ –4.5 A, TO-220 package | Higher current, lower RDS(on), but larger footprint and slower switching (tr ≈ 40 ns) | Choose for higher-power (>500 mA) linear regulation or analog pass devices where thermal mass outweighs speed needs |
Compared with Si2301DS-T1-E3 and IRF9540NPbF, the HAT1035R-EL-E uniquely balances –150 V robustness, –4 V gate drive, and SOP-8 mountability-making it optimal for space-constrained, medium-voltage industrial controls where neither ultra-low RDS(on) nor extreme miniaturization is primary.
Availability
HAT1035R-EL-E is available at Aetrix Electronics and suitable for industrial relay replacement, low-power load switching, DC motor direction control, and overvoltage protection clamp applications requiring stable component supply and long-term manufacturability.
Supply support for HAT1035R-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and power devices for industrial, automotive, and infrastructure markets.
The HAT1035R-EL-E belongs to Renesas' legacy silicon power MOSFET product line, engineered for reliability in industrial control and power management applications where high-voltage tolerance and gate-drive simplicity are essential.
FAQ
What is the maximum continuous drain current rating for HAT1035R-EL-E?
The HAT1035R-EL-E has an absolute maximum continuous drain current (ID) of –0.25 A at Ta = 25°C. Derating applies above 25°C ambient; at 70°C, usable current drops to approximately –0.15 A based on its 1.5 W channel dissipation limit on a 2-drive FR4 board. This rating reflects safe operation without exceeding Tch = 150°C.
Can HAT1035R-EL-E be driven directly from a 3.3 V microcontroller GPIO?
No-HAT1035R-EL-E requires a negative gate-to-source voltage (–4 V minimum) for full enhancement. A 3.3 V GPIO cannot provide this directly. It must be paired with an inverting level-shifting circuit (e.g., NPN transistor or dedicated gate driver) to generate the required –4 V to –10 V swing relative to source. The device's low IGSS (≤±10 µA) minimizes drive current burden once switched.
What is the thermal resistance (RθJA) of HAT1035R-EL-E on a standard PCB?
Renesas does not specify RθJA as a single value. Instead, thermal performance is given via channel dissipation: 1 W for 1-drive FR4 (40 × 40 × 1.6 mm) and 1.5 W for 2-drive FR4. From these, effective RθJA is ~117°C/W (1 W → ΔT = 117°C) and ~87°C/W (1.5 W → ΔT = 130°C), assuming Tch = 150°C and Ta = 25°C. No junction-to-case (RθJC) data is published.
Is HAT1035R-EL-E suitable for automotive applications?
HAT1035R-EL-E is classified as a "Standard" quality grade device per Renesas documentation and is intended for industrial, office, and consumer equipment-not transportation or safety-critical systems. It lacks AEC-Q101 qualification, extended temperature screening, or automotive-specific reliability testing. For automotive use, Renesas recommends qualified alternatives like the RV1S92xx series optocouplers or RA4M2-based power controllers.
Does HAT1035R-EL-E have avalanche ruggedness rated in the datasheet?
No-Renesas does not specify single-pulse or repetitive avalanche energy (EAS) ratings for HAT1035R-EL-E. The Absolute Maximum Ratings table lists only VDSS = –150 V as a DC blocking parameter. Designers must avoid operation in avalanche mode and implement external clamping (e.g., TVS diodes) if inductive energy recovery is expected beyond the body diode's 80 ns trr capability.
HAT1035R-EL-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HAT1035R-EL-E FAQ
1.How can I place an order for HAT1035R-EL-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HAT1035R-EL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HAT1035R-EL-E reliable?
The price and inventory of HAT1035R-EL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HAT1035R-EL-E is usually 5 days.
3.What payment methods are accepted for HAT1035R-EL-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HAT1035R-EL-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HAT1035R-EL-E?
HAT1035R-EL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HAT1035R-EL-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HAT1035R-EL-E?
For technical support, including HAT1035R-EL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HAT1035R-EL-E requirements.
6.How does Aetrix verify that HAT1035R-EL-E is sourced from the original manufacturer or authorized distributors?
All HAT1035R-EL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HAT1035R-EL-E meets industry standards.
7.What is the process for return or replacement of HAT1035R-EL-E?
All HAT1035R-EL-E units undergo pre-shipment inspection (PSI). If there is an issue with HAT1035R-EL-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HAT1035R-EL-E part is unused and in its original packaging.
Return procedure for HAT1035R-EL-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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