Renesas HAT1041T-EL-E

Overview

HAT1041T-EL-E from Renesas Electronics is a silicon P-channel power MOSFET designed for high-speed power switching in low-voltage DC-DC converters and load-switching applications. It features a -20 V drain-to-source voltage rating, 0.020 Ω typical R_DS(on) at V_GS = -4.5 V, and supports gate drive down to -2.5 V - enabling direct interface with 3.3 V logic controllers. Its TSSOP-8 package supports high-density mounting in space-constrained industrial and consumer power modules.

For engineers reviewing the HAT1041T-EL-E datasheet, HAT1041T-EL-E pinout, HAT1041T-EL-E application, or HAT1041T-EL-E equivalent, key selection criteria include its low-threshold gate drive capability, body-diode reverse recovery time (70 ns), thermal resistance (139 °C/W on FR4), and guaranteed -6.0 A continuous drain current - all critical for synchronous buck topologies and hot-swap circuits requiring fast turn-off and minimal conduction loss.

Technical Context

This P-channel MOSFET operates as a high-side switch in buck regulators and OR-ing circuits, where its negative gate threshold (-0.4 to -1.4 V) enables robust turn-on with low-voltage control signals. Its 1850 pF input capacitance and 380 pF reverse transfer capacitance support stable switching up to several hundred kHz without excessive gate drive power.

The device integrates a body diode with -0.85 V forward voltage at -6.0 A and 70 ns reverse recovery time, making it suitable for freewheeling paths in non-synchronous converters. Thermal performance is characterized on a standard 40 × 40 × 1.6 mm FR4 board, with transient thermal impedance data provided for pulse-width-based thermal design.

Key Specifications

Pinout & Package

TSSOP-8 surface-mount package with exposed drain pad (pins 1, 5, 8) for thermal enhancement; lead-free and RoHS-compliant per Renesas documentation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Compared with Si2301DDS-T1-GE3 and IRF7404TRPBF, the HAT1041T-EL-E delivers lower conduction loss at high current, superior thermal performance via its exposed drain pad, and tighter gate threshold control - making it optimal for 3–6 A industrial power switching where efficiency and reliability are prioritized over minimal footprint.

Availability

HAT1041T-EL-E is available at Aetrix Electronics and suitable for industrial PLCs, embedded DC-DC converters, hot-swap modules, and OR-ing power supplies requiring stable component supply across multi-year production cycles.

Supply support for HAT1041T-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.

The HAT1041T-EL-E belongs to Renesas' legacy power MOSFET product line, originally developed under Hitachi and optimized for high-efficiency, low-voltage power switching in industrial and consumer equipment.

FAQ

What is the maximum continuous drain current rating for the HAT1041T-EL-E?

The HAT1041T-EL-E is rated for -6.0 A continuous drain current at T_c = 25°C on a standard FR4 board (40 × 40 × 1.6 mm). This rating assumes proper PCB copper area for thermal conduction from the exposed drain pad. At elevated case temperatures, derating applies per the R_DS(on) vs. temperature curve in the datasheet - for example, at 75°C case temperature, the usable current drops to approximately -4.5 A to maintain safe junction temperature.

Does the HAT1041T-EL-E support 3.3 V logic-level gate drive?

Yes, the HAT1041T-EL-E is specifically characterized for operation with -2.5 V gate drive, making it fully compatible with 3.3 V logic outputs. Its gate threshold voltage range of -0.4 V to -1.4 V ensures strong enhancement-mode turn-on at -2.5 V, with a typical R_DS(on) of 0.035 Ω - sufficient for most ≤3 A load-switching applications without external level shifting.

What is the thermal resistance (θ_JA) of the HAT1041T-EL-E in its TSSOP-8 package?

The HAT1041T-EL-E has a junction-to-ambient thermal resistance (θ_JA) of 139 °C/W when mounted on a standard glass-epoxy FR4 board measuring 40 × 40 × 1.6 mm. This value is measured with the exposed drain pad soldered to a 10 mm² copper pour. Performance improves significantly with larger copper areas or internal layers - for instance, adding two 20 mm² thermal vias beneath the pad can reduce θ_JA to ~85 °C/W.

Can the HAT1041T-EL-E be used as a replacement for a Schottky diode in OR-ing applications?

Yes, the HAT1041T-EL-E is commonly used to replace Schottky diodes in active OR-ing circuits. With its 0.020 Ω typical R_DS(on), it achieves forward voltage drops below 120 mV at 6 A - far lower than the 0.4–0.5 V drop of a typical 40 V Schottky. Its integrated body diode (V_DF = -0.85 V) and 70 ns reverse recovery time also ensure clean commutation during power-source handover in redundant supplies.

Is the HAT1041T-EL-E RoHS compliant and lead-free?

Yes, the HAT1041T-EL-E is RoHS compliant and lead-free, consistent with Renesas Electronics' environmental policy and the JEDEC-standard TSSOP-8 package specifications. The "-EL-E" suffix denotes lead-free, halogen-free, and RoHS-compliant construction. No exemptions apply, and the device meets EU Directive 2011/65/EU requirements for restricted substances.