Renesas HAT1043M-EL-E

Overview

HAT1043M-EL-E from Renesas Electronics is a silicon P-channel power MOSFET designed for low-voltage, high-density power switching applications, featuring R_DS(on) = 85 mΩ at V_GS = –2.5 V, V_DSS = –20 V, and I_D = –4.4 A continuous - enabling direct drive from 3 V logic in load switch and battery protection circuits.

For engineers reviewing the HAT1043M-EL-E datasheet, HAT1043M-EL-E pinout, HAT1043M-EL-E application, or HAT1043M-EL-E equivalent, key selection criteria include gate threshold voltage (V_GS(off) = –0.4 to –1.4 V), body-diode forward voltage (V_DF = –0.95 to –1.23 V), and TSOP-6 package thermal resistance (θ_ch–f = 119°C/W on alumina ceramic board).

Technical Context

This P-channel MOSFET operates as a high-side load switch with depletion-mode-compatible gate drive characteristics, supporting logic-level turn-on from 2.5 V sources. Its low R_DS(on) and fast switching (t_d(on) = 15 ns, t_f = 100 ns) are optimized for pulsed operation under ≤1% duty cycle at 10 µs pulse width.

The device integrates a body-drain diode with reverse recovery time t_rr = 50 ns and di/dt = –20 A/µs rating, and exhibits gate charge Q_g = 11 nC at V_GS = –4.5 V - indicating moderate drive strength requirements for efficient PWM control in portable power rails.

Key Specifications

Pinout & Package

Package: TSOP-6 (RENESAS code PTSP0006FA-A), surface-mount, 6-pin, 2.8 mm × 1.6 mm footprint, 0.65 mm pitch, 0.9 mm max height - optimized for high-density PCB layouts in space-constrained portable electronics.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Compared with Si2301DS-T1-E3 and AO3401, the HAT1043M-EL-E delivers superior 2.5 V drive performance and thermal efficiency in TSOP-6, making it optimal for space- and battery-life-constrained 3 V systems where gate voltage headroom is limited.

Availability

HAT1043M-EL-E is available at Aetrix Electronics and suitable for battery protection circuits, USB power delivery switches, portable LED backlight drivers, and industrial sensor power rails requiring stable component supply and long-term production continuity.

Supply support for HAT1043M-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.

The HAT1043M-EL-E belongs to Renesas' legacy silicon power MOSFET product line, engineered specifically for low-voltage, high-efficiency load switching in portable and battery-operated equipment - emphasizing logic-level drivability, thermal performance, and compact packaging.

FAQ

What is the maximum continuous drain current rating for HAT1043M-EL-E?

The HAT1043M-EL-E has a continuous drain current rating of –4.4 A at T_a = 25°C when mounted on an alumina ceramic board (50 × 50 × 0.7 mm). Derating applies above 25°C ambient per the Power vs. Temperature Derating curve; at 75°C, the usable current drops to approximately –2.5 A. This rating assumes proper PCB thermal design and is not valid for FR-4 boards without copper pour enhancement.

Can HAT1043M-EL-E be driven directly from a 3.3 V microcontroller GPIO?

Yes, the HAT1043M-EL-E is explicitly characterized for 2.5 V gate drive and achieves R_DS(on) = 85–110 mΩ at V_GS = –2.5 V, making it fully compatible with 3.3 V logic outputs. With V_GS(off) ranging from –0.4 V to –1.4 V, the device maintains strong turn-off margin even with GPIO leakage or noise, ensuring reliable operation without external level shifters in HAT1043M-EL-E-based designs.

What is the thermal resistance (θ_ch–f) of HAT1043M-EL-E and how is it measured?

The HAT1043M-EL-E has a channel-to-case thermal resistance θ_ch–f of 119°C/W, measured using an alumina ceramic board (50 × 50 × 0.7 mm) per JEDEC JESD51-14. This value reflects transient thermal impedance under pulsed conditions and is used to calculate junction temperature rise during short-duration loads. For steady-state FR-4 PCBs, actual thermal performance will be significantly worse unless large copper areas are used.

Does HAT1043M-EL-E include an integrated body diode, and what are its key parameters?

Yes, the HAT1043M-EL-E integrates a body-drain diode with forward voltage V_DF = –0.95 to –1.23 V at –4.4 A and reverse recovery time t_rr = 50 ns at di_F/dt = –20 A/µs. These values are specified under V_GS = 0 and confirm suitability for freewheeling and clamping in inductive load switching - though external Schottky diodes may still be preferred for ultra-low-loss or high-frequency applications involving the HAT1043M-EL-E.

What is the package type and lead finish of HAT1043M-EL-E?

The HAT1043M-EL-E uses the TSOP-6 surface-mount package (RENESAS code PTSP0006FA-A, JEITA code SC-95 Modified), with dimensions 2.8 mm × 1.6 mm × 0.9 mm max. It features a lead-free, RoHS-compliant matte tin (Sn) finish per Renesas' environmental compliance policy, and ships in tape-and-reel format (3000 pcs/reel) as indicated by the "-EL-E" suffix.