My Inquiry
My Account
Renesas HAT1044M-EL-E
- Part No.:
- HAT1044M-EL-E
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
HAT1044M-EL-E.pdf
- Description:
- HAT1044M-EL-E - SILICON P CHANNE
- Quantity:
- Payment:
- Shipping:
Inventory:1,808
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
HAT1044M-EL-E from Renesas Electronics is a silicon P-channel power MOSFET designed for low-voltage DC power switching in compact consumer and industrial electronics. It features –30 V drain-to-source voltage, 105 mΩ RDS(on) at –4.5 V gate drive, –4.5 A continuous drain current, and TSOP-6 surface-mount packaging - enabling efficient load switching in battery-powered USB peripherals and portable device power rails.
For engineers reviewing the HAT1044M-EL-E datasheet, HAT1044M-EL-E pinout, HAT1044M-EL-E application, or HAT1044M-EL-E equivalent, key selection criteria include verified –4.5 V logic-level gate compatibility, body-diode forward voltage (–0.95 V), thermal derating on alumina ceramic board, and pulse-rated drain current (–18 A) for inrush handling.
Technical Context
This P-channel MOSFET operates as a high-side load switch with gate threshold voltage ranging from –1.0 V to –2.5 V, ensuring reliable turn-on with standard 5 V microcontroller outputs. Its low input capacitance (600 pF) and fast switching times (td(on) = 12 ns, tf = 55 ns) support efficient PWM control up to several hundred kHz in DC-DC post-regulation and LED driver circuits.
The device integrates a body-drain diode with 50 ns reverse recovery time and –0.95 V forward voltage at –4.5 A, making it suitable for synchronous rectification replacement and flyback catch diode applications where low conduction loss is critical under constrained board space.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | –30 V: Maximum blocking voltage for 5 V–12 V rail switching without avalanche stress |
| RDS(on) @ VGS = –4.5 V | 80–105 mΩ: Enables ≤0.2 W conduction loss at –3 A, suitable for thermally limited PCBs |
| ID (continuous) | –4.5 A: Sustained load current capability with 1.05 W channel dissipation on ceramic board |
| Qg | 13 nC: Low gate charge supports efficient driving from low-current GPIO pins |
| VGS(th) | –1.0 to –2.5 V: Guaranteed turn-on with 3.3 V/5 V logic, no level-shifter required |
| Tch max | 150 °C: Junction temperature limit compatible with industrial ambient (85 °C) and 2.5× safety margin |
| Ciss | 600 pF: Input capacitance enables stable gate drive with <10 Ω series resistance |
Pinout & Package
Package: TSOP-6 (RENESAS code PTSP0006FA-A), 2.95 × 1.75 × 0.7 mm, SC-95 Modified outline, surface-mount, lead-free compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain | High-current output node; electrically tied internally; requires thermal pad connection to PCB ground plane |
| 3 | Gate | Control input; accepts –4.5 V to –20 V; requires 10 kΩ pull-up for default-off operation |
| 4 | Source | Power return path; connects to positive rail in high-side configuration; referenced for gate drive |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at –4.5 V VGS, eliminating need for gate boosters in 5 V systems |
| Low RDS(on) at low VGS | 105 mΩ at –4.5 V ensures <0.21 W loss at –3 A - critical for battery runtime extension |
| Fast switching performance | 12 ns turn-on delay + 55 ns fall time enables clean PWM edges up to 500 kHz |
| Integrated body diode | –0.95 V VDF at –4.5 A reduces heat generation vs. external Schottky in flyback snubbers |
| Thermally optimized package | TSOP-6 footprint with exposed drain pads allows 1.05 W continuous dissipation on 50×50 mm alumina board |
Applications
| USB Power Switching | Portable Device Load Control |
|---|---|
Use Scenario: Selective power gating of USB peripheral ports in laptops and docking stations to meet USB 2.0 suspend current limits. IC Role / Device Role / Timing Role: High-side P-channel MOSFET switch controlling VBUS delivery; driven by USB controller GPIO. Use Value: 105 mΩ RDS(on) limits voltage drop to <320 mV at 3 A, preserving USB 5 V compliance while enabling rapid on/off transitions. | Use Scenario: Battery-backed subsystem enable/disable in handheld test equipment and medical monitors. IC Role / Device Role / Timing Role: Load switch isolating non-critical circuitry (e.g., display backlight, sensors) during sleep mode. Use Value: –1.0 V minimum VGS(th) guarantees full enhancement with 3.3 V MCU I/O, reducing standby leakage to <1 µA. |
| DC-DC Post-Regulator | LED Driver Current Path |
Use Scenario: Output stage of buck converter used in FPGA core voltage regulation where tight transient response is required. IC Role / Device Role / Timing Role: Synchronous rectifier replacement for low-loss freewheeling path; body diode conducts during dead-time. Use Value: 50 ns trr and –0.95 V VDF minimize reverse recovery loss and forward conduction loss versus discrete diodes. | Use Scenario: Constant-current sink control in automotive interior lighting modules with PWM dimming. IC Role / Device Role / Timing Role: Low-side current switch modulating LED string current; gate driven by PWM controller. Use Value: 13 nC Qg enables clean 1 kHz–10 kHz dimming without gate ringing or shoot-through risk. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si2305DS-T1-E3 (Vishay) | –20 V VDSS, 115 mΩ RDS(on) @ –4.5 V, same TSOP-6 package | Limited to ≤20 V systems; higher on-resistance increases conduction loss by ~15% | Select when lower voltage rating suffices and second-source qualification is required |
| AO3401 (Alpha & Omega) | –30 V VDSS, 85 mΩ RDS(on) @ –4.5 V, same pinout but slightly higher Qg (17 nC) | Marginally slower switching due to higher gate charge; identical thermal profile | Prefer for higher current density designs where 85 mΩ improves efficiency over 105 mΩ |
Compared with Si2305DS-T1-E3 and AO3401, the HAT1044M-EL-E offers the lowest gate charge (13 nC) among TSOP-6 P-channel devices rated for –30 V, enabling tighter PWM timing control and reduced gate driver power consumption in space-constrained applications.
Availability
HAT1044M-EL-E is available at Aetrix Electronics and suitable for USB power management, portable device load control, DC-DC post-regulation, and LED driver current path applications requiring stable component supply and long-term industrial availability.
Supply support for HAT1044M-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and IoT markets.
The HAT1044M-EL-E belongs to Renesas' legacy silicon power MOSFET product line, engineered specifically for high-density, low-voltage DC power switching in consumer and industrial electronics where logic-level drive and thermal efficiency are critical.
FAQ
What is the maximum continuous drain current rating for the HAT1044M-EL-E?
The HAT1044M-EL-E has a continuous drain current (ID) rating of –4.5 A when mounted on a 50 × 50 × 0.7 mm alumina ceramic board at Ta = 25°C. This rating assumes proper PCB thermal design; derating is required above 25°C ambient or with smaller copper areas. The HAT1044M-EL-E must not exceed its 1.05 W continuous channel dissipation limit under sustained load conditions.
Does the HAT1044M-EL-E support 3.3 V logic-level gate drive?
Yes - the HAT1044M-EL-E is specified to fully enhance at VGS = –4.5 V, and its gate threshold voltage range (–1.0 V to –2.5 V) ensures reliable turn-on with 3.3 V or 5 V microcontroller outputs. While not guaranteed at exactly –3.3 V, typical RDS(on) remains below 200 mΩ at –3.3 V per characterization data, making the HAT1044M-EL-E suitable for direct GPIO drive in most 3.3 V systems.
What is the thermal resistance (RθJA) of the HAT1044M-EL-E in its TSOP-6 package?
Renesas does not publish a standalone RθJA value for the HAT1044M-EL-E; instead, thermal performance is defined via channel dissipation limits: 1.05 W continuous and 2.0 W pulsed on a 50 × 50 × 0.7 mm alumina ceramic board. This corresponds to an effective RθJA ≈ 95°C/W under those specific board conditions. For FR-4 PCBs, users must perform layout-specific thermal simulation or measurement - the HAT1044M-EL-E's exposed drain terminals require generous copper pour for acceptable junction temperature rise.
Can the HAT1044M-EL-E be used as a synchronous rectifier?
Yes - the HAT1044M-EL-E is suitable as a synchronous rectifier in low-voltage DC-DC converters due to its low RDS(on) (105 mΩ @ –4.5 V), fast switching (td(off) = 55 ns), and integrated body diode with 50 ns reverse recovery time and –0.95 V forward voltage. When used in this role, the HAT1044M-EL-E replaces a Schottky diode to reduce conduction loss, especially in buck or flyback topologies operating below 12 V output.
Is the HAT1044M-EL-E RoHS-compliant and lead-free?
Yes - the HAT1044M-EL-E is manufactured in accordance with the EU RoHS Directive and is lead-free. Its TSOP-6 package (RENESAS code PTSP0006FA-A) uses lead-free terminations and complies with JEDEC standards for moisture sensitivity level (MSL) 1. The "-E" suffix in the part number explicitly denotes RoHS-compliant packaging, and Renesas confirms full environmental compliance documentation is available upon request.
HAT1044M-EL-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 60mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 13 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 600 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.05W (Ta)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
HAT1044M-EL-E FAQ
1.How can I place an order for HAT1044M-EL-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HAT1044M-EL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HAT1044M-EL-E reliable?
The price and inventory of HAT1044M-EL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HAT1044M-EL-E is usually 5 days.
3.What payment methods are accepted for HAT1044M-EL-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HAT1044M-EL-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HAT1044M-EL-E?
HAT1044M-EL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HAT1044M-EL-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HAT1044M-EL-E?
For technical support, including HAT1044M-EL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HAT1044M-EL-E requirements.
6.How does Aetrix verify that HAT1044M-EL-E is sourced from the original manufacturer or authorized distributors?
All HAT1044M-EL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HAT1044M-EL-E meets industry standards.
7.What is the process for return or replacement of HAT1044M-EL-E?
All HAT1044M-EL-E units undergo pre-shipment inspection (PSI). If there is an issue with HAT1044M-EL-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HAT1044M-EL-E part is unused and in its original packaging.
Return procedure for HAT1044M-EL-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HAT1044M-EL-E Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
