Renesas HAT1072H-EL-E

Overview

HAT1072H-EL-E from Renesas Electronics is a silicon P-channel power MOSFET designed for high-current, low-voltage DC power switching applications such as load switching and motor control in industrial and automotive subsystems. It features R_DS(on) = 3.6 mΩ (typ) at V_GS = –10 V, –40 A continuous drain current, –30 V drain-to-source voltage rating, and LFPAK (PTZZ0005DA-A) surface-mount package optimized for thermal performance and high-density PCB layouts.

For engineers reviewing the HAT1072H-EL-E datasheet, HAT1072H-EL-E pinout, HAT1072H-EL-E application, or HAT1072H-EL-E equivalent, key selection criteria include gate drive compatibility down to –4.5 V, body-diode reverse recovery time of 110 ns, static R_DS(on) vs. temperature behavior, and safe operating area limits under pulsed and DC conditions.

Technical Context

This P-channel MOSFET operates as a high-side or low-side switch in DC power rails up to –30 V, with gate threshold voltage V_GS(off) ranging from –0.5 V to –2.0 V and guaranteed turn-on at –4.5 V gate drive. Its low input capacitance (C_iss = 9500 pF) and moderate total gate charge (Q_g = 155 nC) support efficient switching in 100–500 kHz PWM circuits.

The device integrates a robust body-drain diode with V_DF = 0.87 V (typ) at –40 A and trr = 110 ns, enabling synchronous rectification or freewheeling in buck converters and H-bridge motor drivers. Thermal resistance θ_ch–c = 4.17°C/W enables 30 W channel dissipation at T_c = 25°C without forced cooling.

Key Specifications

Pinout & Package

Package: LFPAK (RENESAS code PTZZ0005DA-A), 5-pin surface-mount, 4.9 mm × 3.95 mm footprint, exposed drain pad for thermal conduction. Compatible with standard reflow profiles and automated assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Compared with IRF4905PbF and DMT6009LSD-13, the HAT1072H-EL-E delivers superior thermal efficiency in compact SMT form, guaranteed –4.5 V operation, and tighter body diode timing-making it optimal for space-constrained, high-reliability DC switching where gate drive simplicity and thermal headroom are critical.

Availability

HAT1072H-EL-E is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC outputs, server power sequencing, and medical diagnostic equipment requiring stable component supply and long-term manufacturing continuity.

Supply support for HAT1072H-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.

The HAT1072H-EL-E belongs to Renesas' high-current P-channel power MOSFET product line, engineered for robust DC load switching in harsh environments with emphasis on low gate drive voltage, thermal resilience, and body-diode performance.

FAQ

What is the maximum continuous drain current rating for HAT1072H-EL-E?

The HAT1072H-EL-E is rated for –40 A continuous drain current at T_c = 25°C, with derating to zero at T_c = 150°C per the channel temperature limit. This rating assumes proper PCB copper area for thermal conduction and is validated under pulse test conditions per the datasheet. The HAT1072H-EL-E maintains safe operation within its SOA curve up to 10 ms at full current when ambient and layout conditions permit adequate heat dissipation.

Does HAT1072H-EL-E support gate drive voltages lower than –5 V?

Yes, the HAT1072H-EL-E is explicitly characterized and guaranteed to operate with V_GS = –4.5 V, delivering R_DS(on) = 5.3 mΩ (typ) at –20 A. This feature eliminates the need for external level shifters when interfacing with 5 V logic or microcontroller GPIOs. The HAT1072H-EL-E gate threshold range (V_GS(off) = –0.5 V to –2.0 V) ensures reliable turn-off even with small noise margins.

What is the thermal resistance from channel to case for HAT1072H-EL-E?

The HAT1072H-EL-E has a channel-to-case thermal resistance θ_ch–c of 4.17°C/W, measured under standard mounting conditions on a 1-inch² 2-oz copper pad. This value enables 30 W channel dissipation at T_c = 25°C and supports thermal design in high-power density applications. The HAT1072H-EL-E's LFPAK package provides significantly lower θ_ch–c than comparable SO-8 or DPAK devices, improving system-level thermal margin.

Can HAT1072H-EL-E be used in synchronous rectification topologies?

The HAT1072H-EL-E is not recommended for synchronous rectification due to its P-channel architecture and lack of dedicated synchronous control features. However, its body diode exhibits trr = 110 ns and V_DF = 0.87 V at –40 A, making it suitable for freewheeling and catch diode roles in buck converters and H-bridges. For true synchronous rectification, N-channel FETs with appropriate gate drive are preferred. The HAT1072H-EL-E remains effective in high-side switch configurations where body diode conduction is brief and controlled.

Is HAT1072H-EL-E compliant with RoHS and REACH regulations?

Yes, the HAT1072H-EL-E is RoHS-compliant and meets applicable REACH requirements, as confirmed by Renesas Electronics' environmental compliance documentation. The LFPAK package uses Ni/Pd/Au plating and lead-free solder compatibility, supporting modern electronics manufacturing standards. The HAT1072H-EL-E is designated for "Standard" quality grade applications, including industrial and consumer equipment, and carries full material declaration traceability through Renesas' supply chain.