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Renesas HAT1091C0S-EL-E
- Part No.:
- HAT1091C0S-EL-E
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
HAT1091C0S-EL-E.pdf
- Description:
- HAT1091C0S - P-CHANNEL POWER MOS
- Quantity:
- Payment:
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Inventory:9,000
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Product details
Overview
HAT1091C0S-EL-E from Renesas Electronics is a silicon P-channel MOSFET designed for low-voltage power switching in compact DC-DC converters and load-switching applications. It features 134 mΩ typical RDS(on) at –4.5 V gate drive, ±12 V gate-source voltage rating, and –20 V drain-source breakdown voltage, enabling efficient operation in battery-powered systems with 2.5 V logic-compatible control.
For engineers reviewing the HAT1091C0S-EL-E datasheet, HAT1091C0S-EL-E pinout, HAT1091C0S-EL-E application, or HAT1091C0S-EL-E equivalent, key selection criteria include its CMFPAK-6 package thermal performance (830 mW on FR4), low gate charge (2.6 nC), and guaranteed –1.4 V maximum VGS(th) for reliable turn-on with weak drivers.
Technical Context
This P-channel MOSFET operates as a high-side load switch with gate-controlled conduction between source and drain terminals. Its –20 V VDSS, –1.5 A continuous drain current, and body diode forward voltage of –0.85 V typ. support reverse-polarity protection and hot-swap functionality in 3.3 V and 5 V rail systems.
The device uses a trench-gate structure optimized for low RDS(on) and fast switching: 13 ns turn-on delay, 26 ns rise time, and 9 ns fall time under –10 V VDS, –4.5 V VGS, and 4.7 Ω gate resistance conditions - enabling high-frequency PWM control up to several hundred kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | –20 V: Maximum blocking voltage before avalanche; suitable for 12 V input rails with margin. |
| RDS(on) @ VGS = –4.5 V | 134 mΩ typ.: Enables <100 mW conduction loss at 0.8 A, critical for thermally constrained PCBs. |
| Qg | 2.6 nC: Low total gate charge reduces driver power and enables use with microcontroller GPIOs. |
| VGS(th) | –0.4 to –1.4 V: Guaranteed turn-on with 2.5 V logic; eliminates need for level-shifting circuitry. |
| Pch (FR4 board) | 830 mW: Power dissipation limit on standard 40 × 40 × 1.6 mm glass epoxy PCB at 25°C ambient. |
| Ciss | 200 pF: Input capacitance impacts gate drive loop stability and EMI filtering requirements. |
Pinout & Package
Package: CMFPAK-6 (RENESAS code PWSF0006JA-A), surface-mount, 6-pin leadless package with exposed drain pad for thermal enhancement. Dimensions: 2.1 × 1.8 × 0.8 mm (L × W × H), mass 0.0065 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source | Main current return path; tied to system ground or higher potential depending on high-side configuration. |
| 2, 3, 4, 5 | Drain | Four paralleled drain terminals connected to internal die; soldered to large copper pour for heat dissipation. |
| 6 | Gate | Control terminal; requires no external pull-up when used as high-side switch due to P-channel polarity. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 2.5 V drive | 205 mΩ max. at –2.5 V VGS: Ensures usable on-resistance even with weak or battery-depleted gate drive. |
| Ultra-low gate charge | 2.6 nC total gate charge: Reduces switching losses and allows direct MCU GPIO driving without buffer. |
| Integrated body diode | VDF = –0.85 V typ. at –1.5 A: Supports freewheeling in buck converters and reverse-current blocking. |
| Thermally enhanced package | Exposed drain pad + 4 drain pins: Achieves 830 mW dissipation on FR4 - 2× higher than comparable SOT-23 devices. |
Applications
| Battery-Powered Load Switch | USB Port Power Control |
|---|---|
|
Use Scenario: Enabling/disabling power to peripheral modules (e.g., Bluetooth radios, sensors) in portable medical devices. IC Role / Device Role / Timing Role: High-side P-channel MOSFET load switch controlled by microcontroller GPIO. Use Value: Low 134 mΩ RDS(on) minimizes voltage drop and self-heating during 1 A continuous operation, extending battery life. |
Use Scenario: Implementing overcurrent and short-circuit protection on USB 2.0 downstream ports in docking stations. IC Role / Device Role / Timing Role: Current-limiting switch with fast 9 ns fall time to interrupt fault currents before damage occurs. Use Value: –20 V VDSS and ±12 V VGSS ratings ensure robustness against USB transient surges and ESD events. |
| Reverse Polarity Protection | DC-DC Converter Synchronous Rectifier |
|
Use Scenario: Preventing damage from incorrect battery insertion in handheld test equipment with removable Li-ion packs. IC Role / Device Role / Timing Role: In-line P-channel MOSFET placed between battery terminal and system input rail. Use Value: Body diode forward voltage of –0.85 V ensures low-loss conduction during normal operation while blocking reverse current. |
Use Scenario: Replacing Schottky diodes in 3.3 V output buck converters for improved efficiency in industrial PLC I/O modules. IC Role / Device Role / Timing Role: Synchronous rectifier driven by controller's complementary gate signal. Use Value: 200 pF Ciss and 40 pF Crss enable clean switching with minimal shoot-through risk at 500 kHz switching frequency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET load switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si2301DDS-T1-GE3 | RDS(on) = 115 mΩ @ –4.5 V but only rated for –20 V VDSS; Qg = 3.5 nC - 35% higher than HAT1091C0S-EL-E. | Larger SOT-23-3 footprint; lacks multi-drain thermal pad - limited to 350 mW on FR4 vs. 830 mW. | Choose when board space permits larger package and gate drive strength exceeds 2.6 nC requirement. |
| DMG1012T-7 | RDS(on) = 170 mΩ @ –4.5 V; VGS(th) range –0.5 to –1.2 V; Ciss = 230 pF - 15% higher than HAT1091C0S-EL-E. | Same CMFPAK-6 footprint but lower thermal rating (620 mW); no specified VDF data for body diode. | Acceptable where 170 mΩ RDS(on) is tolerable and thermal budget allows 25% lower power dissipation. |
Compared with Si2301DDS-T1-GE3 and DMG1012T-7, the HAT1091C0S-EL-E delivers superior thermal performance per unit area, lower gate charge for reduced drive loss, and tighter VGS(th) distribution - making it optimal for space-constrained, battery-sensitive designs requiring stable turn-on behavior across temperature.
Availability
HAT1091C0S-EL-E is available at Aetrix Electronics and suitable for battery management systems, USB power delivery controllers, and industrial sensor interface modules requiring stable component supply and long-term production continuity.
Supply support for HAT1091C0S-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.
The HAT1091C0S-EL-E belongs to Renesas' HAT-series low-voltage P-channel MOSFET product line, engineered specifically for high-density, thermally demanding load-switching and power-path control in portable and embedded systems.
FAQ
What is the maximum continuous drain current rating for the HAT1091C0S-EL-E?
The HAT1091C0S-EL-E is rated for –1.5 A continuous drain current (ID) at Ta = 25°C on a standard FR4 board (40 × 40 × 1.6 mm). This rating assumes proper PCB layout with adequate copper pour on the drain pads. At elevated ambient temperatures, derating applies per the power vs. temperature curve on page 3 of the datasheet. The HAT1091C0S-EL-E maintains safe operation up to 150°C channel temperature.
Does the HAT1091C0S-EL-E have an integrated body diode, and what is its forward voltage?
Yes, the HAT1091C0S-EL-E includes an integrated body diode with a typical forward voltage (VDF) of –0.85 V at –1.5 A and VGS = 0 V. This diode supports freewheeling current in buck converters and provides reverse-current blocking in load-switch configurations. The HAT1091C0S-EL-E datasheet specifies VDF across –0.1 A to –1.5 A, confirming consistent performance under real operating loads.
Can the HAT1091C0S-EL-E be driven directly by a 2.5 V microcontroller GPIO?
Yes, the HAT1091C0S-EL-E is explicitly characterized for 2.5 V gate drive, with RDS(on) = 205 mΩ max. at –2.5 V VGS. Its VGS(th) range of –0.4 V to –1.4 V guarantees full enhancement well within 2.5 V logic swing, eliminating the need for gate drivers or level shifters. The HAT1091C0S-EL-E thus simplifies design in ultra-low-power systems where drive strength is limited.
What is the thermal resistance (RθJA) of the HAT1091C0S-EL-E on a standard FR4 board?
The HAT1091C0S-EL-E achieves 830 mW channel dissipation on a 40 × 40 × 1.6 mm FR4 board at 25°C ambient, implying an effective RθJA of approximately 150.6°C/W (calculated from (150°C – 25°C) / 0.83 W). This value reflects the combined thermal path through the CMFPAK-6 package, solder joints, and PCB copper. The HAT1091C0S-EL-E's four-drain-terminal construction significantly improves heat spreading versus single-drain alternatives.
Is the HAT1091C0S-EL-E RoHS compliant and halogen-free?
Yes, the HAT1091C0S-EL-E meets RoHS Directive 2011/65/EU requirements and is halogen-free per J-STD-709 definition. Renesas confirms compliance in the product's environmental documentation and packaging markings. The HAT1091C0S-EL-E taping format (3000 pcs/reel) adheres to JEDEC standards and supports lead-free reflow profiles up to 260°C peak temperature.
HAT1091C0S-EL-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HAT1091C0S-EL-E FAQ
1.How can I place an order for HAT1091C0S-EL-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HAT1091C0S-EL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HAT1091C0S-EL-E reliable?
The price and inventory of HAT1091C0S-EL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HAT1091C0S-EL-E is usually 5 days.
3.What payment methods are accepted for HAT1091C0S-EL-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HAT1091C0S-EL-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HAT1091C0S-EL-E?
HAT1091C0S-EL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HAT1091C0S-EL-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HAT1091C0S-EL-E?
For technical support, including HAT1091C0S-EL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HAT1091C0S-EL-E requirements.
6.How does Aetrix verify that HAT1091C0S-EL-E is sourced from the original manufacturer or authorized distributors?
All HAT1091C0S-EL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HAT1091C0S-EL-E meets industry standards.
7.What is the process for return or replacement of HAT1091C0S-EL-E?
All HAT1091C0S-EL-E units undergo pre-shipment inspection (PSI). If there is an issue with HAT1091C0S-EL-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HAT1091C0S-EL-E part is unused and in its original packaging.
Return procedure for HAT1091C0S-EL-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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