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Renesas HAT1091C-EL-E
- Part No.:
- HAT1091C-EL-E
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- 6-SMD, Flat Leads
- Datasheet:
-
HAT1091C-EL-E.pdf
- Description:
- HAT1091C-EL-E - SILICON P CHANNE
- Quantity:
- Payment:
- Shipping:
Inventory:21,000
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Product details
Overview
HAT1091C-EL-E from Renesas Electronics is a silicon P-channel MOSFET designed for low-voltage power switching applications, featuring 134 mΩ typical RDS(on) at VGS = –4.5 V, –20 V VDSS, and 1.5 A continuous drain current on FR4 board. It serves as a compact, low-drive-power load switch in space-constrained DC-DC converter outputs and battery protection circuits.
For engineers reviewing the HAT1091C-EL-E datasheet, HAT1091C-EL-E pinout, HAT1091C-EL-E application, or HAT1091C-EL-E equivalent, key selection criteria include gate threshold voltage (–0.4 to –1.4 V), body diode forward voltage (–0.85 V typ.), and thermal derating behavior on standard PCBs - all critical for reliable low-side switching in portable electronics.
Technical Context
This P-channel MOSFET operates as a single-polarity, enhancement-mode power switch with gate-driven turn-on requiring negative VGS. Its low 2.5 V gate drive capability enables direct interface with 3.3 V logic controllers without level shifting.
The device integrates a built-in body diode with –0.85 V typical forward voltage at –1.5 A, supporting synchronous rectification and reverse-current blocking in buck converters and OR-ing configurations. Thermal performance is specified for 40 × 40 × 1.6 mm FR4 boards, delivering 830 mW channel dissipation at 25°C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | –20 V: Maximum allowable drain-to-source voltage before avalanche breakdown; defines safe operating range in 12 V and lower systems. |
| RDS(on) @ VGS = –4.5 V | 134 mΩ typ.: Conduction loss of ~1.07 mW at 0.8 A; enables efficient power delivery in portable battery-powered loads. |
| VGS(th) | –0.4 to –1.4 V: Gate threshold range ensuring reliable turn-on with 2.5–3.3 V logic-level control signals. |
| ID (continuous) | –1.5 A: Continuous drain current rating under defined PCB thermal conditions; sets maximum steady-state load capacity. |
| Qg | 2.6 nC: Total gate charge determining driver strength requirement and switching speed in PWM applications. |
| Ciss | 200 pF: Input capacitance affecting gate drive loop stability and high-frequency switching efficiency. |
| Tch | 150 °C: Maximum channel temperature limit; constrains thermal design margin when mounted on FR4. |
Pinout & Package
Package: CMFPAK-6 (RENESAS code PWSF0006JA-A), surface-mount, 6-pin leadless package with exposed drain pad for thermal conduction. Dimensions: 2.1 × 1.7 × 0.8 mm (L × W × H), mass 0.0065 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source | Main current return path; tied to system ground or higher potential depending on low-side vs high-side configuration. |
| 2, 3, 4, 5 | Drain | Four paralleled drain terminals connected internally to the same die region; reduce trace resistance and improve thermal spreading to PCB copper. |
| 6 | Gate | Control input; requires negative voltage relative to source to turn on; sensitive to ESD (±12 V max rating). |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 2.5 V drive | 205 mΩ typ. at VGS = –2.5 V enables direct interfacing with 2.5 V microcontrollers without gate drivers. |
| High-density mounting | CMFPAK-6 footprint occupies < 3.6 mm² PCB area - suitable for ultra-compact power modules and wearables. |
| Body diode integration | –0.85 V VDF at –1.5 A supports freewheeling in DC-DC topologies without external diodes. |
| Pulse-rated peak current | –6 A ID(pulse) allows short-duration surge handling during inrush or fault events. |
Applications
| USB Power Delivery Switch | Battery Protection Circuit |
|---|---|
Use Scenario: Selectively enabling/disabling VBUS path between USB-C port and system load during hot-plug detection and overcurrent events. IC Role / Device Role / Timing Role: Low-side power switch controlling current flow from battery or adapter to downstream circuitry. Use Value: 134 mΩ RDS(on) minimizes voltage drop and heat generation during sustained 1.5 A operation, preserving USB PD compliance. | Use Scenario: Isolating lithium-ion cell from load during over-discharge or short-circuit conditions detected by fuel gauge IC. IC Role / Device Role / Timing Role: Reverse-polarity protected load disconnect switch activated by protection IC's gate-control signal. Use Value: –1.4 V max VGS(th) ensures full turn-on even with degraded battery voltage down to 2.8 V. |
| DC-DC Converter Synchronous Rectifier | Industrial Sensor Node Power Gating |
Use Scenario: Replacing Schottky diode in buck converter output stage to improve efficiency at light and medium loads. IC Role / Device Role / Timing Role: Synchronously commutated low-side switch driven by controller's complementary output. Use Value: 2.6 nC Qg and 26 ns rise time support >1 MHz switching while maintaining low gate drive loss. | Use Scenario: Powering down environmental sensors (e.g., temperature/humidity) between periodic wake-up intervals in battery-operated IoT nodes. IC Role / Device Role / Timing Role: Standby-mode power gate controlled by MCU GPIO to eliminate quiescent current leakage. Use Value: ±10 μA IGSS ensures sub-μA control leakage, extending multi-year battery life in sleep states. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ROHM RQ3E035AP | RDS(on) = 35 mΩ @ VGS = –4.5 V; higher current rating (3.5 A); larger TSMT6 package (3.0 × 1.6 mm). | Better suited for higher-current DC-DC stages where board space permits larger footprint. | Select when lower conduction loss outweighs size constraints and cost sensitivity. |
| ON Semiconductor NTS4101P | RDS(on) = 220 mΩ @ VGS = –2.5 V; SOT-363 package; lower thermal capacity (450 mW). | Targeted at signal-level switching rather than power switching; limited to ≤0.6 A continuous. | Choose only for non-power applications like GPIO isolation or logic-level translation where current demand is minimal. |
Compared with RQ3E035AP and NTS4101P, the HAT1091C-EL-E uniquely balances ultra-compact CMFPAK-6 size, 1.5 A capability, and 2.5 V gate compatibility - making it optimal for space-limited, battery-powered systems requiring moderate power switching without thermal derating penalties.
Availability
HAT1091C-EL-E is available at Aetrix Electronics and suitable for USB power delivery switches, battery protection circuits, and industrial sensor node power gating requiring stable component supply across production lifecycles.
Supply support for HAT1091C-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and power devices for automotive, industrial, and consumer markets.
The HAT1091C-EL-E belongs to Renesas' HAT-series P-channel MOSFET product line, engineered for low-voltage, low-power switching in portable and space-constrained electronics.
FAQ
What is the maximum gate-to-source voltage rating for HAT1091C-EL-E?
The HAT1091C-EL-E has a maximum gate-to-source voltage rating of ±12 V. Exceeding this limit risks permanent gate oxide damage. This specification is verified per absolute maximum ratings in the official Renesas datasheet R07DS1172EJ0500, and applies under all operating and transient conditions including ESD events.
Can HAT1091C-EL-E be used in high-side switching configurations?
Yes, the HAT1091C-EL-E can be used in high-side switching, but requires gate drive voltage ≥ |VGS(th)| above the source potential - typically achieved via charge pump or bootstrap circuitry. Its –0.4 to –1.4 V VGS(th) range and –20 V VDSS support such implementations in 12 V or lower rail systems.
What is the thermal resistance (RθJA) of HAT1091C-EL-E on a standard FR4 board?
Renesas does not specify RθJA directly for HAT1091C-EL-E. Instead, the datasheet provides channel dissipation (830 mW) and derating curves for a 40 × 40 × 1.6 mm FR4 board. From these, effective RθJA is approximately 150°C/W - derived from (150°C – 25°C) / 0.83 W - consistent with typical CMFPAK-6 thermal performance.
Does HAT1091C-EL-E have built-in ESD protection?
The HAT1091C-EL-E incorporates gate oxide rated for ±12 V VGSS, indicating basic process-level ESD robustness, but no explicit human-body-model (HBM) or charged-device-model (CDM) rating is published. External TVS or RC filtering is recommended for gate protection in noisy environments per Renesas application guidance.
Is HAT1091C-EL-E compliant with RoHS and REACH regulations?
Yes, HAT1091C-EL-E is RoHS-compliant and meets REACH SVHC requirements, as confirmed in Renesas' environmental compliance documentation referenced in datasheet R07DS1172EJ0500. The "-E" suffix denotes lead-free, halogen-free packaging conforming to EU directives.
HAT1091C-EL-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 6-SMD, Flat Leads
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4V
- Rds On (Max) @ Id, Vgs:
- 175mOhm @ 800mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 2.6 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 200 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 830mW (Ta)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-CMFPAK
HAT1091C-EL-E FAQ
1.How can I place an order for HAT1091C-EL-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HAT1091C-EL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HAT1091C-EL-E reliable?
The price and inventory of HAT1091C-EL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HAT1091C-EL-E is usually 5 days.
3.What payment methods are accepted for HAT1091C-EL-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HAT1091C-EL-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HAT1091C-EL-E?
HAT1091C-EL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HAT1091C-EL-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HAT1091C-EL-E?
For technical support, including HAT1091C-EL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HAT1091C-EL-E requirements.
6.How does Aetrix verify that HAT1091C-EL-E is sourced from the original manufacturer or authorized distributors?
All HAT1091C-EL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HAT1091C-EL-E meets industry standards.
7.What is the process for return or replacement of HAT1091C-EL-E?
All HAT1091C-EL-E units undergo pre-shipment inspection (PSI). If there is an issue with HAT1091C-EL-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HAT1091C-EL-E part is unused and in its original packaging.
Return procedure for HAT1091C-EL-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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