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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas HAT1093C-EL-E

Name: HAT1093C-EL-E
Brand: Renesas
SKU: HAT1093C-EL-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: HAT1093C-EL-E

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: 6-SMD, Flat Leads

Datasheet:: HAT1093C-EL-E.pdf

Description:: HAT1093C - P-CHANNEL POWER MOSFE

Quantity:: RFQ Add To RFQ list

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Product details

Overview

HAT1093C-EL-E from Renesas Electronics is a silicon P-channel MOSFET designed for low-voltage power switching applications, featuring 41 mΩ typical R_DS(on) at –4.5 V gate drive, –12 V drain-to-source voltage rating, and –3 A continuous drain current capability. It supports 1.8 V logic-level gate drive and is optimized for high-density mounting in space-constrained DC-DC converters and load switches.

For engineers reviewing the HAT1093C-EL-E datasheet, HAT1093C-EL-E pinout, HAT1093C-EL-E application, or HAT1093C-EL-E equivalent, key selection criteria include verified R_DS(on) at low V_GS, body diode forward voltage (–0.8 V typ.), thermal derating on FR4 boards, and CMFPAK-6 package compatibility with automated SMT assembly.

Technical Context

This P-channel MOSFET operates as a high-side load switch with gate threshold voltage ranging from –0.3 V to –1.2 V, enabling reliable turn-on with low-voltage microcontroller I/O. Its 940 pF input capacitance and 11 nC total gate charge support fast switching (t_d(on) = 18 ns, t_f = 28 ns) under 4.7 Ω gate resistance.

The device integrates a built-in body diode with –0.8 V forward voltage at –3 A, suitable for reverse polarity protection and synchronous rectification in buck-derived topologies. Thermal performance is characterized for 40 × 40 × 1.6 mm FR4 PCBs, delivering 900 mW channel dissipation at T_a = 25°C and derating to zero at 150°C ambient.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	–12 V: Maximum blocking voltage for low-voltage rail protection and battery-switching circuits
R_DS(on) @ V_GS = –4.5 V	41 mΩ typ.: Enables <100 mW conduction loss at –1.5 A, critical for thermally constrained portable designs
I_D (continuous)	–3 A: Supports moderate-power loads such as USB PD sink control and e-fuse blocks
V_GS(th)	–0.3 to –1.2 V: Ensures guaranteed turn-on with 1.8 V logic outputs without level-shifting circuitry
Q_g	11 nC: Determines gate driver strength requirement; compatible with standard MCU GPIO or small gate drivers
V_SD (body diode)	–0.8 V typ. @ –3 A: Reduces reverse-current conduction loss in back-to-back MOSFET configurations
P_ch	900 mW @ T_a = 25°C on FR4: Defines maximum steady-state power handling without heatsinking

Pinout & Package

Package: CMFPAK-6 (RENESAS code PWSF0006JA-A), surface-mount, 6-pin leadless package with exposed drain pad for thermal enhancement.

Pin/Terminal	Circuit Role	Design Meaning
1	Source	Main current return path; connects to system ground or negative rail in high-side switch configuration
2, 3, 4, 5	Drain	Parallel-connected drain terminals sharing internal die connection; soldered to PCB copper pour for thermal and current handling
6	Gate	Control input requiring negative voltage relative to source to turn on; sensitive to ESD (±8 V max V_GSS)

Key Features

Feature	Design Value
Low R_DS(on) at 1.8 V drive	79 mΩ typ. at V_GS = –1.8 V enables direct interface with ultra-low-voltage MCUs without gate boosting
High-density CMFPAK-6 footprint	2.1 × 1.8 mm outline with 0.65 mm pitch allows placement in <3 mm² board area, ideal for wearables and IoT nodes
Fast switching with low Q_g	11 nC total gate charge and 18 ns turn-on delay support >1 MHz PWM operation in compact DC-DC regulators
Body diode with low V_F	–0.8 V forward voltage reduces power loss during freewheeling in half-bridge or reverse-polarity protection circuits

Applications

Battery-Powered Load Switch	USB Type-C Port Protection
Use Scenario: Enabling/disabling power to peripheral modules (e.g., BLE radio, sensor hub) in battery-operated edge devices. IC Role / Device Role / Timing Role: High-side P-channel MOSFET switch controlled by MCU GPIO to isolate downstream loads. Use Value: 41 mΩ R_DS(on) limits dropout to <60 mV at 1.5 A, preserving battery runtime; 1.8 V gate compatibility eliminates level shifter.	Use Scenario: Reverse-voltage and overcurrent protection for USB Type-C receptacles in host devices. IC Role / Device Role / Timing Role: Back-to-back P-MOSFET pair (with companion device) providing bidirectional blocking and fault isolation. Use Value: Low V_GS(th) ensures robust turn-on during hot-plug events; –0.8 V body diode minimizes insertion loss during CC line monitoring.
Industrial Sensor Node Power Rail	Low-Voltage E-Fuse Circuit
Use Scenario: Controlled power-up sequencing of analog front-end ICs and ADCs in 3.3 V/2.5 V industrial sensor transmitters. IC Role / Device Role / Timing Role: Precision-controlled high-side switch with slew-rate limited gate drive to prevent inrush current. Use Value: Predictable 1.2 V max V_GS(th) allows accurate gate bias design; 940 pF C_iss supports stable RC timing for soft-start networks.	Use Scenario: Current-limited power delivery to FPGA I/O banks or memory subsystems requiring fault-tolerant supply rails. IC Role / Device Role / Timing Role: Active current-limiting switch using external sense resistor and comparator feedback loop. Use Value: 54 mΩ max R_DS(on) at –2.5 V enables precise current sensing resolution; 150°C T_ch rating supports sustained fault conditions.

Battery-Powered Load Switch

USB Type-C Port Protection

Use Scenario: Enabling/disabling power to peripheral modules (e.g., BLE radio, sensor hub) in battery-operated edge devices.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET switch controlled by MCU GPIO to isolate downstream loads.

Use Value: 41 mΩ R_DS(on) limits dropout to <60 mV at 1.5 A, preserving battery runtime; 1.8 V gate compatibility eliminates level shifter.

Use Scenario: Reverse-voltage and overcurrent protection for USB Type-C receptacles in host devices.

IC Role / Device Role / Timing Role: Back-to-back P-MOSFET pair (with companion device) providing bidirectional blocking and fault isolation.

Use Value: Low V_GS(th) ensures robust turn-on during hot-plug events; –0.8 V body diode minimizes insertion loss during CC line monitoring.

Industrial Sensor Node Power Rail

Low-Voltage E-Fuse Circuit

Use Scenario: Controlled power-up sequencing of analog front-end ICs and ADCs in 3.3 V/2.5 V industrial sensor transmitters.

IC Role / Device Role / Timing Role: Precision-controlled high-side switch with slew-rate limited gate drive to prevent inrush current.

Use Value: Predictable 1.2 V max V_GS(th) allows accurate gate bias design; 940 pF C_iss supports stable RC timing for soft-start networks.

Use Scenario: Current-limited power delivery to FPGA I/O banks or memory subsystems requiring fault-tolerant supply rails.

IC Role / Device Role / Timing Role: Active current-limiting switch using external sense resistor and comparator feedback loop.

Use Value: 54 mΩ max R_DS(on) at –2.5 V enables precise current sensing resolution; 150°C T_ch rating supports sustained fault conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ROHM RQ3E035AP	R_DS(on) = 35 mΩ @ –4.5 V; smaller 2.0 × 2.1 mm HSOP-6 package; higher C_iss (1100 pF)	Better conduction efficiency but tighter layout constraints due to different pinout and thermal pad geometry	Select when lower R_DS(on) justifies re-layout and thermal validation on HSOP-6 footprint
ON Semiconductor NTMFS4C03NT1G	R_DS(on) = 3.2 mΩ @ –10 V only; requires –10 V gate drive; SO-8FL package with larger 3.3 × 3.3 mm footprint	Not suitable for 1.8 V logic drive; intended for higher-voltage, higher-current systems with dedicated gate drivers	Choose only if system provides –10 V gate bias and board space permits SO-8FL; not drop-in for HAT1093C-EL-E

Compared with RQ3E035AP and NTMFS4C03NT1G, the HAT1093C-EL-E uniquely balances 1.8 V gate compatibility, 41 mΩ conduction loss, and ultra-compact CMFPAK-6 packaging-making it optimal for space- and voltage-constrained portable electronics where gate drive simplicity is prioritized over absolute lowest R_DS(on).

Availability

HAT1093C-EL-E is available at Aetrix Electronics and suitable for battery-powered load switching, USB port protection, and low-voltage e-fuse circuits requiring stable component supply across production volumes.

Supply support for HAT1093C-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer specializing in microcontrollers, analog, and power devices for industrial, automotive, and consumer applications.

The HAT1093C-EL-E belongs to Renesas' low-voltage P-channel MOSFET product line, engineered for energy-efficient power switching in portable and space-constrained electronics where logic-level gate drive and thermal performance on standard PCBs are critical.

FAQ

What is the maximum continuous drain current rating for the HAT1093C-EL-E?

The HAT1093C-EL-E is rated for –3 A continuous drain current (I_D) at T_a = 25°C when mounted on a 40 × 40 × 1.6 mm FR4 board. This rating decreases with rising ambient temperature per the derating curve on page 3 of the datasheet, reaching zero at 150°C ambient. The device also supports –12 A peak pulsed current for ≤10 μs at 1% duty cycle.

Can the HAT1093C-EL-E be driven directly by a 1.8 V microcontroller GPIO?

Yes, the HAT1093C-EL-E is specifically designed for 1.8 V gate drive. Its gate threshold voltage (V_GS(th)) ranges from –0.3 V to –1.2 V, ensuring full enhancement at –1.8 V V_GS. At that drive level, R_DS(on) is 79 mΩ typ., enabling reliable switching without external level-shifting circuitry.

What is the thermal resistance (R_θJA) of the HAT1093C-EL-E on a standard FR4 board?

The datasheet does not specify R_θJA as a single value, but provides channel dissipation (P_ch) vs. ambient temperature data. For a 40 × 40 × 1.6 mm FR4 board at T_a = 25°C, P_ch = 900 mW corresponds to a calculated R_θJA ≈ 139°C/W. This value increases significantly with smaller copper areas or non-optimal layout.

Does the HAT1093C-EL-E include an integrated body diode, and what is its forward voltage?

Yes, the HAT1093C-EL-E includes a parasitic body diode inherent to its P-channel MOSFET structure. Its forward voltage (V_DF) is –0.8 V typ. and –1.1 V max at –3 A and V_GS = 0, as measured on page 2 of the datasheet. This diode enables reverse-polarity protection and freewheeling paths in switching topologies.

What is the package type and lead count of the HAT1093C-EL-E?

The HAT1093C-EL-E uses the CMFPAK-6 package (RENESAS code PWSF0006JA-A), a 6-pin surface-mount leadless package with dimensions of 2.1 × 1.8 mm. Pins 2–5 are internally connected to the drain, Pin 1 is the source, and Pin 6 is the gate - confirmed in the Outline diagram on page 1 of the datasheet.

HAT1093C-EL-E Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 6-SMD, Flat Leads

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 54mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id:: 1.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 940 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 900mW (Ta)

Operating Temperature:: 150°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-CMFPAK

HAT1093C-EL-E FAQ

1.How can I place an order for HAT1093C-EL-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HAT1093C-EL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HAT1093C-EL-E reliable?

The price and inventory of HAT1093C-EL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HAT1093C-EL-E is usually 5 days.

3.What payment methods are accepted for HAT1093C-EL-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HAT1093C-EL-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HAT1093C-EL-E?

HAT1093C-EL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HAT1093C-EL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HAT1093C-EL-E?

For technical support, including HAT1093C-EL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HAT1093C-EL-E requirements.

6.How does Aetrix verify that HAT1093C-EL-E is sourced from the original manufacturer or authorized distributors?

All HAT1093C-EL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HAT1093C-EL-E meets industry standards.

7.What is the process for return or replacement of HAT1093C-EL-E?

All HAT1093C-EL-E units undergo pre-shipment inspection (PSI). If there is an issue with HAT1093C-EL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HAT1093C-EL-E part is unused and in its original packaging.

Return procedure for HAT1093C-EL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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