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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas HAT1096C-EL-E

Name: HAT1096C-EL-E
Brand: Renesas
SKU: HAT1096C-EL-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: HAT1096C-EL-E

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: 6-SMD, Flat Leads

Datasheet:: HAT1096C-EL-E.pdf

Description:: HAT1096C - P-CHANNEL POWER MOSFE

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Product details

Overview

HAT1096C-EL-E from Renesas Electronics is a silicon P-channel MOSFET designed for low-voltage power switching applications, featuring 225 mΩ typical R_DS(on) at –4.5 V gate drive, –20 V drain-to-source voltage rating, and 1 A continuous drain current capability. It operates with 2.5 V logic-compatible gate drive and is optimized for high-density mounting in space-constrained DC-DC converters and load switches.

For engineers reviewing the HAT1096C-EL-E datasheet, HAT1096C-EL-E pinout, HAT1096C-EL-E application, or HAT1096C-EL-E equivalent, key selection criteria include its low on-resistance at low gate voltage, body diode forward voltage of –0.85 V, thermal derating behavior on FR4 boards, and CMFPAK-6 package footprint compatibility.

Technical Context

This P-channel enhancement-mode MOSFET uses planar silicon process technology to achieve stable threshold voltage (–0.4 to –1.4 V) and low gate charge (2 nC total, with 0.4 nC gate-to-source and 0.6 nC gate-to-drain components). Its output capacitance (C_oss = 40 pF) and reverse transfer capacitance (C_rss = 30 pF) support fast switching with 12 ns turn-on delay and 8 ns fall time under defined test conditions.

The device is characterized for operation up to 150 °C channel temperature and exhibits monotonic R_DS(on) increase with junction temperature - rising from 225 mΩ at 25 °C to ~380 mΩ at 100 °C - enabling predictable conduction loss modeling in thermally constrained designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	–20 V: Maximum blocking voltage before avalanche conduction; defines safe operating range in 12 V and lower rail systems.
R_DS(on) @ V_GS = –4.5 V	225 mΩ typ.: Conduction loss of 56.25 mW at 0.5 A; enables efficient low-side switching without active cooling.
I_D Continuous	–1 A: Sustained current handling on FR4 board (40 × 40 × 1.6 mm); sets PCB copper area and thermal relief requirements.
Q_g	2 nC: Total gate charge determines driver strength needed; compatible with low-power GPIO or dedicated gate drivers.
V_GS(th)	–0.4 to –1.4 V: Guaranteed turn-on with 2.5 V logic; ensures reliable enhancement-mode operation across process variation.
V_SD @ I_F = –1 A	–0.85 V typ.: Body diode forward voltage impacts reverse recovery and synchronous rectification efficiency.
t_f	8 ns: Fast fall time minimizes switching transition losses in PWM-controlled loads above 100 kHz.

Pinout & Package

Package: CMFPAK-6 (RENESAS code PWSF0006JA-A), surface-mount, 6-pin leadless package with exposed drain pad for thermal dissipation. Dimensions: 2.1 mm × 1.7 mm × 0.8 mm (L × W × H), mass 0.0065 g.

Pin/Terminal	Circuit Role	Design Meaning
1	Source	Main current return path; tied to system ground or higher-potential rail depending on high-side/low-side configuration.
2, 3, 4, 5	Drain	Four paralleled drain terminals reduce package inductance and improve thermal spreading to PCB copper.
6	Gate	Control input requiring negative voltage relative to source to turn on; sensitive to ESD (±12 V max).

Key Features

Feature	Design Value
Low R_DS(on) at 2.5 V drive	Enables direct interface with 2.5 V/3.3 V microcontrollers without level-shifting circuitry.
High-density CMFPAK-6 footprint	Reduces PCB area by >40% vs. SO-8; supports miniaturized portable and wearable power stages.
Low Q_gd/Q_g ratio (0.6/2 nC)	Improves switching robustness against Miller-induced false turn-on during high dv/dt transients.
Body diode with low V_DF	Supports bidirectional current flow in battery protection circuits and reverse polarity protection without external diodes.
Thermal derating validated on FR4	Provides verified power dissipation limits (790 mW at 25 °C ambient) for standard PCB material stacks.

Applications

Battery Protection Circuit	USB Port Power Switch
Use Scenario: Reverse-current blocking and overcurrent shutdown in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: P-channel high-side switch controlling battery discharge path; activated by protection IC's gate control signal. Use Value: 225 mΩ R_DS(on) limits voltage drop to <113 mV at 0.5 A, preserving battery runtime and state-of-charge accuracy.	Use Scenario: Hot-swap power enable for USB 2.0 peripheral ports with inrush current limiting. IC Role / Device Role / Timing Role: Load switch isolating VBUS from downstream circuitry; driven by USB controller GPIO. Use Value: 2.5 V gate compatibility allows direct control from 3.3 V USB controller outputs, eliminating level-shifters.
DC-DC Converter Synchronous Rectifier	Industrial Sensor Node Power Gating
Use Scenario: Low-side synchronous rectification in buck converter output stage for improved efficiency. IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode; timed by controller's complementary PWM signal. Use Value: 0.85 V body diode forward voltage reduces conduction loss by 30% vs. typical 1.2 V Schottky in light-load conditions.	Use Scenario: Power gating of wireless transceivers and analog front-ends in battery-powered IIoT sensors. IC Role / Device Role / Timing Role: Ultra-low-quiescent-power load switch enabling sub-μA sleep mode isolation. Use Value: Gate leakage <±10 μA ensures <10 nW control power consumption, extending multi-year battery life.

Battery Protection Circuit

USB Port Power Switch

Use Scenario: Reverse-current blocking and overcurrent shutdown in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: P-channel high-side switch controlling battery discharge path; activated by protection IC's gate control signal.

Use Value: 225 mΩ R_DS(on) limits voltage drop to <113 mV at 0.5 A, preserving battery runtime and state-of-charge accuracy.

Use Scenario: Hot-swap power enable for USB 2.0 peripheral ports with inrush current limiting.

IC Role / Device Role / Timing Role: Load switch isolating VBUS from downstream circuitry; driven by USB controller GPIO.

Use Value: 2.5 V gate compatibility allows direct control from 3.3 V USB controller outputs, eliminating level-shifters.

DC-DC Converter Synchronous Rectifier

Industrial Sensor Node Power Gating

Use Scenario: Low-side synchronous rectification in buck converter output stage for improved efficiency.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode; timed by controller's complementary PWM signal.

Use Value: 0.85 V body diode forward voltage reduces conduction loss by 30% vs. typical 1.2 V Schottky in light-load conditions.

Use Scenario: Power gating of wireless transceivers and analog front-ends in battery-powered IIoT sensors.

IC Role / Device Role / Timing Role: Ultra-low-quiescent-power load switch enabling sub-μA sleep mode isolation.

Use Value: Gate leakage <±10 μA ensures <10 nW control power consumption, extending multi-year battery life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2301DDS-T1-GE3	R_DS(on) = 115 mΩ @ –4.5 V; smaller SOT-23-3 package; no paralleled drains.	Higher current density but less thermal margin on FR4; unsuitable for >0.8 A continuous loads without heatsinking.	Select when board space is critical and peak current ≤0.8 A; verify layout thermal relief matches Si2301's smaller pad area.
AO3401	R_DS(on) = 55 mΩ @ –4.5 V; TO-236 package; higher Q_g (3.5 nC) increases driver demand.	Lower conduction loss but slower switching (t_f = 15 ns); may increase EMI in high-frequency SMPS.	Select when minimizing I²R loss dominates design priority and switching frequency ≤500 kHz; confirm gate driver can supply 3.5 nC.

Compared with Si2301DDS-T1-GE3 and AO3401, the HAT1096C-EL-E offers balanced trade-offs: moderate R_DS(on) with superior thermal performance via four-drain terminals and low Q_g, making it optimal for compact, thermally constrained 1 A load switches where driver simplicity and reliability outweigh ultra-low on-resistance.

Availability

HAT1096C-EL-E is available at Aetrix Electronics and suitable for battery protection circuits, USB power delivery modules, and industrial sensor node power gating requiring stable component supply and RoHS-compliant taping.

Supply support for HAT1096C-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer headquartered in Japan, specializing in microcontrollers, analog and power devices, and SoC solutions for automotive, industrial, and IoT markets.

The HAT1096C-EL-E belongs to Renesas' HAT-series P-channel MOSFET product line, engineered for low-voltage, logic-level power switching in space- and efficiency-sensitive applications such as portable electronics and smart peripherals.

FAQ

What is the maximum continuous drain current rating for HAT1096C-EL-E under standard PCB conditions?

The HAT1096C-EL-E is rated for –1 A continuous drain current when mounted on a standard FR4 board (40 × 40 × 1.6 mm) at 25 °C ambient temperature. This rating assumes proper thermal relief and is derated linearly above 25 °C per the published power vs. temperature curve. The HAT1096C-EL-E must not exceed this limit without additional heatsinking or airflow.

Can HAT1096C-EL-E be driven directly by a 3.3 V microcontroller GPIO?

Yes - the HAT1096C-EL-E has a guaranteed gate threshold voltage range of –0.4 V to –1.4 V and is specified for 2.5 V gate drive, making it fully compatible with 3.3 V logic outputs. When the GPIO pulls the gate to 0 V (relative to source), the resulting V_GS = –3.3 V ensures strong enhancement-mode conduction. The HAT1096C-EL-E will operate reliably without external level-shifting circuitry.

What is the thermal resistance θ_JA of HAT1096C-EL-E on a standard FR4 board?

The HAT1096C-EL-E achieves a channel-to-ambient thermal resistance (θ_JA) of approximately 158 °C/W when mounted on a 40 × 40 × 1.6 mm FR4 board with recommended copper land pattern, derived from its 790 mW channel dissipation rating at 25 °C ambient. This value is validated in the official Renesas datasheet R07DS1175EJ0500 and applies only to the specified board construction. The HAT1096C-EL-E performance degrades if copper area is reduced.

Does HAT1096C-EL-E include an integrated body diode, and what is its forward voltage?

Yes, the HAT1096C-EL-E integrates a parasitic body diode between source and drain. Its forward voltage is –0.85 V typical at –1 A and 25 °C, with a maximum of –1.1 V. This diode enables reverse-current conduction in applications like battery backup paths and flyback energy recirculation. The HAT1096C-EL-E body diode is intrinsic to the MOSFET structure and requires no external components.

What is the gate-to-source voltage rating for HAT1096C-EL-E, and why is it important?

The HAT1096C-EL-E has a ±12 V gate-to-source voltage rating (V_GSS). Exceeding this limit risks permanent gate oxide damage, especially during transient events or improper driving. This specification governs clamp diode selection, gate resistor sizing, and ESD protection design. For reliable operation, gate drive circuits must ensure V_GS stays within ±12 V - a critical constraint reflected in all HAT1096C-EL-E application schematics.

HAT1096C-EL-E Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 6-SMD, Flat Leads

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 1A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 293mOhm @ 500µA, 4.5V

Vgs(th) (Max) @ Id:: 1.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 2 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 155 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 790mW (Ta)

Operating Temperature:: 150°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-CMFPAK

HAT1096C-EL-E FAQ

1.How can I place an order for HAT1096C-EL-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HAT1096C-EL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HAT1096C-EL-E reliable?

The price and inventory of HAT1096C-EL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HAT1096C-EL-E is usually 5 days.

3.What payment methods are accepted for HAT1096C-EL-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HAT1096C-EL-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HAT1096C-EL-E?

HAT1096C-EL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HAT1096C-EL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HAT1096C-EL-E?

For technical support, including HAT1096C-EL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HAT1096C-EL-E requirements.

6.How does Aetrix verify that HAT1096C-EL-E is sourced from the original manufacturer or authorized distributors?

All HAT1096C-EL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HAT1096C-EL-E meets industry standards.

7.What is the process for return or replacement of HAT1096C-EL-E?

All HAT1096C-EL-E units undergo pre-shipment inspection (PSI). If there is an issue with HAT1096C-EL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HAT1096C-EL-E part is unused and in its original packaging.

Return procedure for HAT1096C-EL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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