Renesas HAT1125HWS-E

Overview

HAT1125HWS-E from Renesas Electronics is a dual N-channel power MOSFET in SOP-8 package, designed for synchronous rectification in high-efficiency DC/DC converters. It features R_DS(on) = 2.7 mΩ (V_GS = 4.5 V), Q_g = 3.6 nC, and continuous drain current I_D = 45 A per channel - enabling compact, low-loss secondary-side power stages in notebook PC CPU VRMs.

For engineers reviewing the HAT1125HWS-E datasheet, HAT1125HWS-E pinout, HAT1125HWS-E application, or HAT1125HWS-E equivalent, this device is selected for high-current, space-constrained synchronous buck topologies requiring direct 4.5 V gate drive compatibility with integrated PWM controllers and thermal resistance optimization in thin-profile consumer power supplies.

Technical Context

HAT1125HWS-E integrates two matched N-channel MOSFETs in a single SOP-8 package, configured for half-bridge or dual-phase synchronous rectification. Its 30 V V_DSS, ±20 V V_GSS, and 45 A per-channel rating support operation in 12–20 V input DC/DC converters delivering 1.5–5.0 V outputs at up to 40 A total load.

The device uses trench-gate process technology to achieve low R_DS(on) and low Q_g, minimizing conduction and switching losses. Its 4.5 V logic-level gate threshold enables direct interface with standard PWM ICs without level-shifting, while its 0.8 mm max height (SOP-8) supports ultra-slim end equipment form factors.

Key Specifications

Pinout & Package

SOP-8 package with exposed thermal pad (pin 8 connected to source of both channels). Dual-channel layout supports independent gate control and shared source connection for synchronous rectifier configurations.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with RJK0328DPB and HAT2218R, the HAT1125HWS-E provides matched 45 A dual channels with lowest R_DS(on) in SOP-8, making it optimal for symmetric, space-constrained synchronous rectification where channel matching and footprint reduction are prioritized over maximum individual current rating.

Availability

HAT1125HWS-E is available at Aetrix Electronics and suitable for notebook PC power supply design, TFT backlight DC/DC conversion, and Li-ion battery pack protection requiring stable component supply and long-term industrial availability.

Supply support for HAT1125HWS-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and consumer markets.

The HAT1125HWS-E belongs to Renesas' 7th-generation power MOSFET family targeting high-efficiency, ultra-slim DC/DC converters - engineered specifically for next-gen mobile computing power delivery with emphasis on low R_DS(on), low Q_g, and logic-level drive compatibility.

FAQ

What is the maximum junction temperature rating for HAT1125HWS-E?

The HAT1125HWS-E has a maximum rated junction temperature (T_J) of 150 °C, consistent with industrial-grade power MOSFET reliability requirements. This rating assumes proper PCB thermal design - including full-solder connection of the exposed thermal pad (pin 8) to a minimum 1-inch² copper pour - to maintain safe operating temperatures under 45 A continuous load conditions. Derating curves in the official Renesas datasheet define allowable current versus ambient temperature.

Is HAT1125HWS-E pin-compatible with other dual N-channel SOP-8 MOSFETs like HAT2218R?

No, HAT1125HWS-E is not pin-compatible with HAT2218R. While both use SOP-8 packages, their internal channel assignments differ: HAT1125HWS-E uses pins 1–4 as common source and pin 8 as thermal pad/source tie, whereas HAT2218R employs asymmetric pinout with dedicated high-side and low-side drains. Layout reuse requires verification against each device's specific pin function table; direct substitution without schematic and PCB review is not recommended.

Does HAT1125HWS-E include integrated Schottky body diodes?

No, HAT1125HWS-E does not integrate Schottky diodes. It is a dual N-channel silicon MOSFET with standard parasitic body diodes. The device relies on synchronous rectification control - turning on the appropriate channel during freewheeling periods - to replace external Schottky diodes. Its low Q_g and fast switching characteristics (t_f < 20 ns typical) ensure efficient body-diode bypass without reverse recovery penalties.

Can HAT1125HWS-E be used in a single-ended forward or flyback topology?

Yes, HAT1125HWS-E can be used in single-ended topologies such as active-clamp forward or synchronous flyback, provided one channel serves as the main switch and the other remains unused or is paralleled for current sharing. Its 30 V V_DSS and 45 A rating suit secondary-side synchronous rectification in 12–19 V input adapters, but primary-side use requires additional gate drive isolation and voltage derating beyond 30 V.

What is the typical thermal resistance (R_θJA) of HAT1125HWS-E in standard JEDEC 2S2P layout?

The typical junction-to-ambient thermal resistance (R_θJA) for HAT1125HWS-E is 50 °C/W under JEDEC-standard 2-layer 2S2P test board conditions (1 inch² copper on each layer, via-stitched thermal pad). With enhanced PCB layout - including 2 oz copper, multiple thermal vias under pin 8, and internal ground planes - R_θJA can be reduced to ≤35 °C/W, enabling sustained 45 A operation at T_A ≤ 60 °C ambient.