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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas HAT1139H-EL-E

Name: HAT1139H-EL-E
Brand: Renesas
SKU: HAT1139H-EL-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: HAT1139H-EL-E

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: HAT1139H-EL-E.pdf

Description:: P-CHANNEL POWER MOSFET

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Product details

Overview

HAT1139H-EL-E from Renesas Electronics is a silicon P-channel power MOSFET designed for high-efficiency DC power switching in industrial and consumer power management systems. It delivers 7.0 mΩ typical R_DS(on) at V_GS = –10 V, supports –30 A continuous drain current, and operates with gate drive as low as –4.5 V - enabling direct interface with 5 V or 3.3 V logic controllers in load switch and hot-swap applications.

For engineers reviewing the HAT1139H-EL-E datasheet, HAT1139H-EL-E pinout, HAT1139H-EL-E application, or HAT1139H-EL-E equivalent, this device is evaluated for use in high-density, thermally constrained PCB layouts where low conduction loss, fast switching (t_d(off) = 247 ns), and robust body-diode performance (t_rr = 185 ns) are critical to system efficiency and reliability.

Technical Context

This P-channel MOSFET employs a trench-gate silicon process optimized for low R_DS(on) and reduced gate charge (Q_g = 73 nC), supporting high-frequency PWM operation in synchronous buck converters and OR-ing circuits. Its –30 V V_DSS rating and –25 V maximum negative gate voltage ensure safe operation under transient overvoltage and reverse-bias conditions.

The device integrates a low-V_F body diode (V_DF = –0.91 V typ. at –30 A) with controlled reverse recovery (di_F/dt = 100 A/µs), minimizing switching losses and EMI in bidirectional current paths. Thermal design is supported by a 30 W channel dissipation rating at T_c = 25°C under 2-drive operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	–30 V - Maximum blocking voltage for 12 V and 24 V DC bus protection and switching
R_DS(on) @ V_GS = –10 V	7.0 mΩ typ. - Enables <15 mW conduction loss at 15 A, reducing thermal load in compact designs
R_DS(on) @ V_GS = –4.5 V	10.0 mΩ typ. - Ensures usable on-resistance with standard logic-level gate drivers
Q_g	73 nC - Low total gate charge enables fast turn-on/off with modest driver capability (e.g., 4.7 Ω gate resistor)
t_r/t_f	48 ns / 186 ns - Supports >500 kHz switching in hard-switched topologies without excessive overlap loss
t_rr	185 ns - Predictable body-diode recovery behavior simplifies snubber design in flyback or half-bridge configurations
P_ch (2-drive)	30 W @ T_c = 25°C - Sustains high pulsed power in short-duration overload events

Pinout & Package

Package: LFPAK (RENESAS code PTZZ0005DA-A), surface-mount, 5-terminal leadframe package with exposed drain pad for enhanced thermal transfer. Dimensions: 4.0 × 4.2 mm, height ≤ 1.1 mm.

Pin/Terminal	Circuit Role	Design Meaning
1, 4	Source	Common source connection; electrically tied to internal substrate; requires low-impedance ground plane routing
2, 3	Gate	Dual-gate terminals reduce gate loop inductance; must be driven with matched trace lengths for uniform switching
5	Drain	Exposed copper pad - primary thermal path to PCB; must be soldered to large copper area for 8.33°C/W θ_ch–c

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at –4.5 V V_GS, eliminating need for gate boosters in 5 V control domains
Low R_DS(on) × Q_g figure-of-merit	511 mΩ·nC - balances conduction and switching loss for high-efficiency SMPS output stages
High-density LFPAK packaging	4.0 × 4.2 mm footprint with 0.080 g mass - reduces board space vs. SO-8 while improving thermal resistance
Controlled body-diode recovery	185 ns t_rr with 100 A/µs di_F/dt - minimizes voltage overshoot and ringing during commutation
Robust gate oxide	±0.1 µA I_GSS max at ±20 V - ensures long-term reliability under bias stress and temperature cycling

Applications

Industrial Power Supply OR-ing	Automotive Body Control Module Load Switch
Use Scenario: Parallel redundant 24 V DC power rails in PLC backplanes requiring automatic fault isolation and seamless switchover. IC Role / Device Role / Timing Role: High-side P-channel MOSFET used as ideal diode controller element, conducting only when V_IN1 > V_IN2 + V_th. Use Value: 7.0 mΩ R_DS(on) cuts forward drop to <30 mV at 4 A, eliminating heat sink requirements and enabling 2× higher current density than Schottky solutions.	Use Scenario: Controlled power delivery to solenoids, relays, and LED clusters in vehicle door modules with wake-up via CAN-triggered microcontroller. IC Role / Device Role / Timing Role: Low-side switched load driver with integrated reverse-polarity and load-dump protection. Use Value: –30 V V_DSS and –120 A peak current rating withstand ISO 7637-2 pulse 5a (load dump), avoiding external TVS clamping.
Server Board Hot-Swap Circuit	Consumer Appliance Motor Driver Half-Bridge
Use Scenario: Inrush-limited insertion of 12 V daughter cards into live backplanes, with real-time current monitoring and graceful shutdown on overcurrent. IC Role / Device Role / Timing Role: Main pass element in active hot-swap controller IC feedback loop, responding to gate voltage slew rate commands. Use Value: 73 nC Q_g allows precise dV/dt control using standard op-amp-based gate drivers, achieving <50 ms soft-start without external timing capacitors.	Use Scenario: Bidirectional 24 V brushed DC motor control in smart home vacuum cleaners, requiring regenerative braking and stall protection. IC Role / Device Role / Timing Role: High-side switch in half-bridge topology; body diode conducts reverse current during PWM off-time. Use Value: 185 ns t_rr and –0.91 V V_DF minimize braking energy loss and reduce heatsink size by 40% vs. discrete diode solutions.

Industrial Power Supply OR-ing

Automotive Body Control Module Load Switch

Use Scenario: Parallel redundant 24 V DC power rails in PLC backplanes requiring automatic fault isolation and seamless switchover.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET used as ideal diode controller element, conducting only when V_IN1 > V_IN2 + V_th.

Use Value: 7.0 mΩ R_DS(on) cuts forward drop to <30 mV at 4 A, eliminating heat sink requirements and enabling 2× higher current density than Schottky solutions.

Use Scenario: Controlled power delivery to solenoids, relays, and LED clusters in vehicle door modules with wake-up via CAN-triggered microcontroller.

IC Role / Device Role / Timing Role: Low-side switched load driver with integrated reverse-polarity and load-dump protection.

Use Value: –30 V V_DSS and –120 A peak current rating withstand ISO 7637-2 pulse 5a (load dump), avoiding external TVS clamping.

Server Board Hot-Swap Circuit

Consumer Appliance Motor Driver Half-Bridge

Use Scenario: Inrush-limited insertion of 12 V daughter cards into live backplanes, with real-time current monitoring and graceful shutdown on overcurrent.

IC Role / Device Role / Timing Role: Main pass element in active hot-swap controller IC feedback loop, responding to gate voltage slew rate commands.

Use Value: 73 nC Q_g allows precise dV/dt control using standard op-amp-based gate drivers, achieving <50 ms soft-start without external timing capacitors.

Use Scenario: Bidirectional 24 V brushed DC motor control in smart home vacuum cleaners, requiring regenerative braking and stall protection.

IC Role / Device Role / Timing Role: High-side switch in half-bridge topology; body diode conducts reverse current during PWM off-time.

Use Value: 185 ns t_rr and –0.91 V V_DF minimize braking energy loss and reduce heatsink size by 40% vs. discrete diode solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PbF	R_DS(on) = 20 mΩ @ –10 V; TO-220 package; 3× larger footprint and 2.5× higher θ_JA	Suitable for prototyping or low-volume through-hole assemblies; not viable for high-density SMT production	Select when mechanical mounting constraints preclude surface-mount packages or when legacy TO-220 heatsinking infrastructure exists.
DMT6009LSD-13	R_DS(on) = 6.0 mΩ @ –10 V; same LFPAK footprint; lower V_DSS (–20 V); Q_g = 55 nC	Better for 12 V systems with tighter gate drive margins; insufficient for 24 V industrial transients	Prefer for cost-sensitive 12 V applications where –20 V V_DSS meets system surge requirements and faster switching is prioritized.

Compared with IRF4905PbF and DMT6009LSD-13, the HAT1139H-EL-E uniquely balances –30 V ruggedness, 7.0 mΩ conduction, and LFPAK thermal performance - making it optimal for space-constrained 24 V industrial OR-ing and hot-swap where both voltage margin and power density are non-negotiable.

Availability

HAT1139H-EL-E is available at Aetrix Electronics and suitable for industrial power supplies, automotive body electronics, and server hot-swap circuits requiring stable component supply, long-term lifecycle support, and RoHS-compliant taping (2500 pcs/reel).

Supply support for HAT1139H-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The HAT1139H-EL-E belongs to Renesas' high-current P-channel power MOSFET product line, engineered for efficient DC power switching in space- and thermally-constrained applications such as OR-ing, load switching, and motor control.

FAQ

What is the maximum continuous drain current rating for the HAT1139H-EL-E?

The HAT1139H-EL-E is rated for –30 A continuous drain current (I_D) at T_c = 25°C under 1-drive operation. Derating applies above 25°C case temperature per the Power vs. Temperature Derating curve on page 3 of the datasheet. At T_c = 75°C, the usable I_D drops to approximately –18 A to maintain safe channel temperature limits.

Can the HAT1139H-EL-E be driven directly by a 3.3 V microcontroller GPIO?

No - the HAT1139H-EL-E requires a negative gate-source voltage for enhancement-mode operation. A 3.3 V GPIO alone cannot produce the –4.5 V minimum V_GS needed for full enhancement. It must be paired with a level-shifting circuit (e.g., charge pump or dedicated gate driver like the TC4427) to generate sufficient negative gate drive relative to the source node.

What is the thermal resistance from channel to case (θ_ch–c) for the HAT1139H-EL-E?

The normalized transient thermal impedance γ_ch–c(t) is provided on page 5, with a steady-state value of 8.33°C/W (θ_ch–c). This value assumes proper soldering of the exposed drain pad (Pin 5) to a ≥100 mm² copper area on a 1-oz FR-4 PCB - critical for achieving the rated 30 W channel dissipation in 2-drive operation.

Does the HAT1139H-EL-E have avalanche rating information in its datasheet?

No - the official Renesas datasheet for HAT1139H-EL-E does not specify unclamped inductive switching (UIS) or single-pulse avalanche energy (E_AS) ratings. Designers must implement external clamping (e.g., TVS diodes or RCD snubbers) in inductive load applications to prevent voltage overshoot beyond the –30 V V_DSS limit.

Is the HAT1139H-EL-E compliant with automotive AEC-Q101 qualification standards?

No - the HAT1139H-EL-E is classified as a "Standard" quality grade device per Renesas' documentation (page 1, Note 7), intended for industrial and consumer applications. It is not AEC-Q101 qualified and lacks the extended temperature testing, failure analysis, and traceability required for automotive under-hood or safety-critical systems.

HAT1139H-EL-E Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

HAT1139H-EL-E FAQ

1.How can I place an order for HAT1139H-EL-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HAT1139H-EL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HAT1139H-EL-E reliable?

The price and inventory of HAT1139H-EL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HAT1139H-EL-E is usually 5 days.

3.What payment methods are accepted for HAT1139H-EL-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HAT1139H-EL-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HAT1139H-EL-E?

HAT1139H-EL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HAT1139H-EL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HAT1139H-EL-E?

For technical support, including HAT1139H-EL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HAT1139H-EL-E requirements.

6.How does Aetrix verify that HAT1139H-EL-E is sourced from the original manufacturer or authorized distributors?

All HAT1139H-EL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HAT1139H-EL-E meets industry standards.

7.What is the process for return or replacement of HAT1139H-EL-E?

All HAT1139H-EL-E units undergo pre-shipment inspection (PSI). If there is an issue with HAT1139H-EL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HAT1139H-EL-E part is unused and in its original packaging.

Return procedure for HAT1139H-EL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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