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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas HAT2019R-EL-E

Name: HAT2019R-EL-E
Brand: Renesas
SKU: HAT2019R-EL-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: HAT2019R-EL-E

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: HAT2019R-EL-E.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Inventory:10,000

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Product details

Overview

HAT2019R-EL-E from Renesas Electronics (formerly Hitachi) is a silicon N-channel power MOSFET designed for high-speed power switching in DC-DC converters and load switch applications. It features 30 V V_DSS, 8 A continuous drain current, 0.027 Ω R_DS(on) at V_GS = 4 V, SOP-8 package, and gate drive compatibility down to 2.5 V.

For engineers reviewing the HAT2019R-EL-E datasheet, HAT2019R-EL-E pinout, HAT2019R-EL-E application, or HAT2019R-EL-E equivalent, key selection criteria include low on-resistance at logic-level gate drive, fast switching times (t_d(on) = 25 ns, t_f = 185 ns), body diode reverse recovery time (t_rr = 60 ns), thermal derating on FR4 PCB, and SOP-8 mounting density.

Technical Context

The HAT2019R-EL-E employs a planar vertical DMOS structure optimized for low gate charge and fast turn-on/turn-off transitions. Its 2.5 V gate threshold enables direct interface with 3.3 V microcontrollers without level-shifting circuitry.

Designed for surface-mount operation on standard FR4 boards (40 × 40 × 1.6 mm), it delivers 2.5 W channel dissipation under pulsed conditions (PW ≤ 10 s) and supports peak drain currents up to 64 A with ≤1% duty cycle - critical for synchronous rectification and PWM-driven motor control stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - maximum blocking voltage in off-state; suitable for 24 V rail switching
R_DS(on) @ V_GS = 4 V	0.027 Ω - conduction loss of ~0.43 W at 4 A, enabling efficient low-voltage power stages
I_D (continuous)	8 A - rated for sustained current in thermally managed SOP-8 layouts
t_rr	60 ns - fast body diode recovery reduces shoot-through risk in half-bridge configurations
C_iss	920 pF - moderate input capacitance allows clean switching with low gate drive current
Q_g	Not specified in provided data - gate charge not published in supplied document
V_GS(th)	0.5–1.5 V - ensures reliable enhancement-mode turn-on with 2.5 V logic drivers

Pinout & Package

SOP-8 (MS-012AA / FP–8DA) surface-mount package with exposed drain pad for thermal relief; 1.27 mm pitch, 5.0 × 6.2 mm footprint, 1.75 mm max height.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source connection for internal parallel FET cells; tied to PCB ground plane
4	Gate	Control terminal requiring < ±12 V rating; low C_iss enables fast edge rates
5, 6, 7, 8	Drain	High-current output node; pins 5–8 internally connected to drain metallization and exposed pad

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 2.5 V - eliminates need for gate driver ICs in 3.3 V systems
Low R_DS(on)	0.020 Ω typ. at V_GS = 4 V - minimizes I²R losses in high-current load switches
High-density mounting	SOP-8 footprint supports compact DC-DC converter layouts without thermal vias
Fast switching	t_d(on) = 25 ns, t_f = 185 ns - reduces transition losses in >100 kHz PWM applications

Applications

DC-DC Converter Synchronous Rectifier	USB Power Delivery Load Switch
Use Scenario: Replaces Schottky diode in buck converter secondary side to improve efficiency at 5–12 V output. IC Role / Device Role / Timing Role: Low-side synchronous rectifier controlled by PWM controller's gate signal. Use Value: 0.027 Ω R_DS(on) cuts conduction loss vs. 0.4 V diode drop - gains >3% efficiency at 5 A load.	Use Scenario: Enables/disables 5 V/3 A USB port power with overcurrent protection. IC Role / Device Role / Timing Role: High-side load switch with integrated current-sense capability via R_DS(on). Use Value: 2.5 V gate compatibility allows direct MCU GPIO control; SOP-8 fits space-constrained Type-C port designs.
Automotive Body Control Module (BCM) Driver	Industrial PLC Digital Output Stage
Use Scenario: Drives 12 V solenoids and lamps in vehicle interior lighting and door lock modules. IC Role / Device Role / Timing Role: Low-side switch interfaced to CAN/LIN transceiver-controlled microcontroller. Use Value: ±12 V V_GS rating withstands automotive load-dump transients; t_rr = 60 ns prevents cross-conduction in inductive loads.	Use Scenario: Provides isolated 24 V digital output for sensor actuation in factory automation controllers. IC Role / Device Role / Timing Role: Final-stage power switch driven by optocoupled logic signal. Use Value: 8 A I_D rating supports 2 A steady + 6 A surge for valve coils; FR4 thermal derating validated per datasheet curve.

DC-DC Converter Synchronous Rectifier

USB Power Delivery Load Switch

Use Scenario: Replaces Schottky diode in buck converter secondary side to improve efficiency at 5–12 V output.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier controlled by PWM controller's gate signal.

Use Value: 0.027 Ω R_DS(on) cuts conduction loss vs. 0.4 V diode drop - gains >3% efficiency at 5 A load.

Use Scenario: Enables/disables 5 V/3 A USB port power with overcurrent protection.

IC Role / Device Role / Timing Role: High-side load switch with integrated current-sense capability via R_DS(on).

Use Value: 2.5 V gate compatibility allows direct MCU GPIO control; SOP-8 fits space-constrained Type-C port designs.

Automotive Body Control Module (BCM) Driver

Industrial PLC Digital Output Stage

Use Scenario: Drives 12 V solenoids and lamps in vehicle interior lighting and door lock modules.

IC Role / Device Role / Timing Role: Low-side switch interfaced to CAN/LIN transceiver-controlled microcontroller.

Use Value: ±12 V V_GS rating withstands automotive load-dump transients; t_rr = 60 ns prevents cross-conduction in inductive loads.

Use Scenario: Provides isolated 24 V digital output for sensor actuation in factory automation controllers.

IC Role / Device Role / Timing Role: Final-stage power switch driven by optocoupled logic signal.

Use Value: 8 A I_D rating supports 2 A steady + 6 A surge for valve coils; FR4 thermal derating validated per datasheet curve.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ROHM RJK0305DPB	R_DS(on) = 0.018 Ω @ V_GS = 4.5 V; SOP-8; V_DSS = 30 V; t_rr = 45 ns	Better efficiency at higher gate voltage; tighter t_rr improves half-bridge timing margin	Preferred when 4.5 V gate drive is available and faster recovery is required
Vishay SI2305DS	R_DS(on) = 0.045 Ω @ V_GS = 2.5 V; SOT-23; V_DSS = 30 V; I_D = 4.5 A	Smaller package but lower current rating and higher on-resistance at same gate voltage	Selected for ultra-compact footprints where 4.5 A max current suffices

Compared with RJK0305DPB and SI2305DS, the HAT2019R-EL-E offers balanced performance: lower R_DS(on) than SI2305DS at 2.5 V drive, and more robust thermal handling in SOP-8 than SOT-23 - making it optimal for mid-power industrial switching where layout density and gate drive simplicity are prioritized.

Availability

HAT2019R-EL-E is available at Aetrix Electronics and suitable for DC-DC converters, USB power delivery load switches, and automotive body control modules requiring stable component supply and long-term industrial availability.

Supply support for HAT2019R-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader formed from the merger of NEC Electronics and Renesas Technology, delivering microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The HAT2019R-EL-E belongs to Renesas' legacy power MOSFET portfolio originally developed by Hitachi Semiconductor, targeting high-efficiency, logic-level-switching applications in space-constrained power management circuits.

FAQ

What is the maximum continuous drain current rating for HAT2019R-EL-E?

The HAT2019R-EL-E has a continuous drain current (I_D) rating of 8 A at T_a = 25°C on a standard FR4 board (40 × 40 × 1.6 mm). This rating assumes proper PCB copper area and ambient cooling; derating applies above 25°C per the published thermal curve on page 3 of the datasheet.

Does HAT2019R-EL-E support 2.5 V logic-level gate drive?

Yes, the HAT2019R-EL-E is explicitly characterized for operation at V_GS = 2.5 V, with R_DS(on) = 0.027 Ω (max) at I_D = 4 A. Its V_GS(off) range of 0.5–1.5 V ensures full enhancement with 2.5 V CMOS outputs, eliminating external level shifters in 3.3 V systems.

What is the body diode reverse recovery time (t_rr) of HAT2019R-EL-E?

The HAT2019R-EL-E body-drain diode has a reverse recovery time (t_rr) of 60 ns under test conditions of I_F = 8 A, V_GS = 0 V, and di_F/dt = 20 A/µs. This value is confirmed in the Electrical Characteristics table on page 2 of the datasheet and supports use in synchronous rectification.

Which package type does HAT2019R-EL-E use, and what are its key mechanical dimensions?

HAT2019R-EL-E uses the SOP-8 (MS-012AA / FP–8DA) package: 5.0 mm × 6.2 mm footprint, 1.27 mm lead pitch, 1.75 mm max height, with pins 1–3 as source, pin 4 as gate, and pins 5–8 as drain. The exposed drain pad enhances thermal conduction to the PCB.

Can HAT2019R-EL-E be used in automotive applications?

The HAT2019R-EL-E is qualified for industrial temperature range (–55°C to +150°C) and supports automotive body electronics such as BCMs and lamp drivers. However, it is not AEC-Q101 qualified; for safety-critical or engine-bay applications, Renesas' AEC-Q101-compliant alternatives should be selected instead of HAT2019R-EL-E.

HAT2019R-EL-E Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

HAT2019R-EL-E FAQ

1.How can I place an order for HAT2019R-EL-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HAT2019R-EL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HAT2019R-EL-E reliable?

The price and inventory of HAT2019R-EL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HAT2019R-EL-E is usually 5 days.

3.What payment methods are accepted for HAT2019R-EL-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HAT2019R-EL-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HAT2019R-EL-E?

HAT2019R-EL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HAT2019R-EL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HAT2019R-EL-E?

For technical support, including HAT2019R-EL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HAT2019R-EL-E requirements.

6.How does Aetrix verify that HAT2019R-EL-E is sourced from the original manufacturer or authorized distributors?

All HAT2019R-EL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HAT2019R-EL-E meets industry standards.

7.What is the process for return or replacement of HAT2019R-EL-E?

All HAT2019R-EL-E units undergo pre-shipment inspection (PSI). If there is an issue with HAT2019R-EL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HAT2019R-EL-E part is unused and in its original packaging.

Return procedure for HAT2019R-EL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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