Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas HAT2033RJ01-EL

Part No.:
HAT2033RJ01-EL
Manufacturer:
Renesas
Category:
FETs, MOSFETs
Package:
-
Datasheet:
AetrixHAT2033RJ01-EL.pdf
Description:
N-CHANNEL POWER MOSFET
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,450

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

HAT2033RJ01-EL from Renesas is a silicon N-channel power MOSFET designed for high-speed automotive power switching, featuring 60 V VDSS, 7 A continuous drain current, and low on-resistance of 0.04 Ω at 4 V gate drive - enabling efficient 12 V battery-fed motor control and load switching in engine management systems.

For engineers reviewing the HAT2033RJ01-EL datasheet, HAT2033RJ01-EL pinout, HAT2033RJ01-EL application, or HAT2033RJ01-EL equivalent, key selection criteria include its AEC-Q101-qualified automotive grade, SOP-8 (FP-8DAV) package with source-gate-drain terminal layout, 4.2 mJ repetitive avalanche energy rating, and verified 4 V logic-level gate drive compatibility.

Technical Context

This MOSFET employs a planar vertical DMOS structure optimized for fast switching and robust avalanche performance. Its gate threshold voltage range (1.2–2.2 V) and low input capacitance (740 pF) support clean turn-on with standard microcontroller GPIOs, while the body diode's 45 ns reverse recovery time enables synchronous rectification in DC-DC converters.

The device is characterized for operation up to 150 °C channel temperature and derates linearly above 25 °C ambient - delivering 2.5 W channel dissipation on FR4 PCBs (40 × 40 × 1.6 mm). Its RDS(on) remains stable across temperature due to integrated thermal compensation in the die design.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 60 V - supports 12 V automotive systems with ≥2× supply margin against load dump transients
ID (continuous) 7 A - drives medium-power solenoids, fans, or LED arrays without external heatsinking on standard PCBs
RDS(on) @ 4 V 0.04 Ω max - enables <1.1 W conduction loss at 7 A, reducing thermal stress in compact layouts
Avalanche energy EAR 4.2 mJ - withstands inductive kickback from 100 µH loads at 7 A without failure under defined test conditions
tr/tf 55 ns / 95 ns - achieves sub-200 ns total switching transition, minimizing overlap loss in PWM-driven applications
Ciss 740 pF - compatible with low-current gate drivers (≥50 Ω series resistance recommended per datasheet)
Tch max 150 °C - allows operation in under-hood environments with validated thermal design margins

Pinout & Package

Package: SOP-8 (FP-8DAV), JEITA code PRSP0008DD-D, 3.95 × 4.9 mm footprint with 1.27 mm pitch; surface-mount, lead-free (Ni/Pd/Au plating), mass 0.085 g.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3 Source Common return path for drain current; pins 1–3 internally bonded to reduce source inductance in high-di/dt switching
4 Gate Control input requiring ≤±10 µA leakage at ±16 V; driven directly by 3.3 V/5 V logic with appropriate series resistor
5, 6, 7, 8 Drain High-side or low-side power output node; pins 5–8 paralleled for low-inductance connection to PCB power plane

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive under-hood use including temperature cycling, humidity bias, and mechanical shock per JESD22 standards
4 V gate drive capability Guarantees full enhancement at logic-level voltages, eliminating need for gate boosters in 12 V MCU-based systems
Low IDSS (0.1 µA @ 60 V) Minimizes standby leakage in always-on vehicle modules, extending battery life in sleep-mode applications
Repetitive avalanche rated Enables reliable operation in inductive switching without external snubbers in cost-sensitive automotive ECUs
High-density SOP-8 mounting Reduces PCB area vs. TO-252 while maintaining thermal performance via exposed drain pad soldering to copper pour

Applications

Engine Control Unit (ECU) Fuel Injector Driver Automotive HVAC Blower Motor Controller

Use Scenario: Switching 12 V fuel injectors with 2–5 ms pulse width and 10 Hz–200 Hz frequency in gasoline direct injection systems.

IC Role / Device Role / Timing Role: Low-side switch controlling injector coil current; handles 7 A peak with 45 ns diode recovery to minimize dead-time distortion.

Use Value: Eliminates need for external flyback diode due to rugged body diode, reducing BOM count and board space in tight ECU modules.

Use Scenario: PWM-controlled blower motor speed regulation in climate control systems operating continuously at ambient temperatures up to 85 °C.

IC Role / Device Role / Timing Role: High-efficiency power stage switching at 20 kHz; leverages 0.04 Ω RDS(on) to limit I²R losses below 2 W at full load.

Use Value: Enables fan speed control without audible whine by supporting >15 kHz PWM, while 150 °C Tch rating ensures reliability near heater cores.

Body Control Module (BCM) Power Distribution Start-Stop System Solenoid Driver

Use Scenario: Centralized 12 V power distribution to door locks, window lifts, and lighting loads with individual fault protection.

IC Role / Device Role / Timing Role: Smart high-side or low-side switch with built-in overcurrent detection; uses avalanche rating to absorb inductive spikes during load disconnection.

Use Value: Reduces system-level fuse count by enabling electronic current limiting and diagnostics, improving serviceability and functional safety compliance.

Use Scenario: Engaging starter solenoid in 12 V start-stop systems where repeated cranking pulses demand high surge current tolerance.

IC Role / Device Role / Timing Role: Robust low-side switch handling 56 A pulsed drain current; relies on 4.2 mJ avalanche energy to survive starter motor back-EMF without clamping circuits.

Use Value: Extends solenoid lifetime by suppressing voltage overshoot beyond 60 V, meeting OEM requirements for >100,000 start cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N6F7 60 V, 220 A (ID), DFN5x6 package; RDS(on) = 1.6 mΩ @ 10 V - requires 10 V gate drive, not 4 V logic-compatible Targeted at high-current battery disconnect switches, not medium-power discrete load switching Select when higher current capacity and lower RDS(on) justify gate driver redesign and larger PCB footprint
ON Semiconductor NTMFS4C09NT1G 60 V, 120 A (ID), SO-8FL package; RDS(on) = 3.6 mΩ @ 10 V - no specified 4 V drive capability or automotive qualification Designed for server PSU OR-ing and industrial power supplies, lacking AEC-Q101 validation Choose only for non-automotive applications where cost and RDS(on) outweigh qualification and gate-drive compatibility needs

Compared with STL220N6F7 and NTMFS4C09NT1G, the HAT2033RJ01-EL uniquely balances AEC-Q101 compliance, 4 V gate drive, and SOP-8 mountability - making it the only option among the three suitable for cost-sensitive, space-constrained automotive body electronics without gate voltage translation.

Availability

HAT2033RJ01-EL is available at Aetrix Electronics and suitable for automotive engine control units, HVAC blower systems, and body control modules requiring stable component supply across extended production lifecycles.

Supply support for HAT2033RJ01-EL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and IoT markets.

The HAT2033RJ01-EL belongs to Renesas' automotive-qualified power MOSFET family, engineered specifically for high-reliability 12 V battery-switching applications in harsh under-hood environments.

FAQ

Is HAT2033RJ01-EL AEC-Q101 qualified?

Yes, the HAT2033RJ01-EL is explicitly qualified to AEC-Q101 for automotive applications, as confirmed by its "J" type code designation and inclusion in Renesas' automotive-grade product line. This qualification covers stress tests including temperature cycling, humidity bias, and mechanical shock - ensuring reliability in under-hood environments where the HAT2033RJ01-EL operates.

What is the maximum gate-source voltage for HAT2033RJ01-EL?

The absolute maximum gate-source voltage (VGSS) for the HAT2033RJ01-EL is ±20 V, as specified in the Absolute Maximum Ratings table. Operation beyond this range risks permanent gate oxide damage. For reliable 4 V logic-level drive, a series gate resistor (≥50 Ω) is recommended to damp ringing and limit peak current during switching transitions of the HAT2033RJ01-EL.

Does HAT2033RJ01-EL have an integrated body diode?

Yes, the HAT2033RJ01-EL includes an integral body-drain diode with forward voltage (VDF) of 0.82–1.07 V at 7 A and reverse recovery time (trr) of 45 ns. This diode is rated for 7 A continuous reverse current and supports freewheeling in inductive load applications - a key feature enabling simplified designs in fuel injector and motor driver circuits using the HAT2033RJ01-EL.

Can HAT2033RJ01-EL be used in high-temperature under-hood locations?

Yes, the HAT2033RJ01-EL supports channel temperatures up to 150 °C and storage temperatures from –55 to +150 °C. Its thermal characteristics are validated on FR4 PCBs (40 × 40 × 1.6 mm), with derating curves provided for ambient temperatures above 25 °C - confirming suitability for under-hood applications such as engine control units where the HAT2033RJ01-EL must sustain operation near heat sources.

What is the avalanche energy rating of HAT2033RJ01-EL?

The HAT2033RJ01-EL is rated for 4.2 mJ of repetitive avalanche energy (EAR) under defined test conditions (IAP = 7 A, VDD = 25 V, L = 100 µH, duty < 0.1 %, Rg ≥ 50 Ω). This specification confirms its ability to safely absorb inductive energy during switching events - a critical capability for solenoid and relay driving applications where the HAT2033RJ01-EL replaces discrete snubber networks.

HAT2033RJ01-EL Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
FET Type:
-
Technology:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

HAT2033RJ01-EL FAQ

1.How can I place an order for HAT2033RJ01-EL through Aetrix?

Please submit a Request for Quotation (RFQ) for HAT2033RJ01-EL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HAT2033RJ01-EL reliable?

The price and inventory of HAT2033RJ01-EL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HAT2033RJ01-EL is usually 5 days.

3.What payment methods are accepted for HAT2033RJ01-EL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HAT2033RJ01-EL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HAT2033RJ01-EL?

HAT2033RJ01-EL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HAT2033RJ01-EL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HAT2033RJ01-EL?

For technical support, including HAT2033RJ01-EL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HAT2033RJ01-EL requirements.

6.How does Aetrix verify that HAT2033RJ01-EL is sourced from the original manufacturer or authorized distributors?

All HAT2033RJ01-EL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HAT2033RJ01-EL meets industry standards.

7.What is the process for return or replacement of HAT2033RJ01-EL?

All HAT2033RJ01-EL units undergo pre-shipment inspection (PSI). If there is an issue with HAT2033RJ01-EL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HAT2033RJ01-EL part is unused and in its original packaging.

Return procedure for HAT2033RJ01-EL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

HAT2033RJ01-EL Tags

  • HAT2033RJ01-EL
  • HAT2033RJ01-EL PDF
  • HAT2033RJ01-EL Datasheet
  • HAT2033RJ01-EL Specifications
  • HAT2033RJ01-EL Images
  • Renesas
  • Renesas HAT2033RJ01-EL
  • Buy HAT2033RJ01-EL
  • HAT2033RJ01-EL Price
  • HAT2033RJ01-EL Distributor
  • HAT2033RJ01-EL Supplier
  • HAT2033RJ01-EL Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER