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Renesas HAT2085T-EL-E
- Part No.:
- HAT2085T-EL-E
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
HAT2085T-EL-E.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:21,000
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Product details
Overview
HAT2085T-EL-E from Renesas Electronics is a silicon N-channel MOSFET designed for high-speed power switching in DC-DC converters and motor drivers. It features 200 V drain-to-source voltage rating, 0.49 Ω typical RDS(on) at VGS = 10 V and ID = 0.7 A, 1.4 A continuous drain current, and TSSOP-8 surface-mount package with source-gate-drain terminal configuration.
For engineers reviewing the HAT2085T-EL-E datasheet, HAT2085T-EL-E pinout, HAT2085T-EL-E application, or HAT2085T-EL-E equivalent, key selection criteria include its low gate charge (10 nC), fast switching times (td(on) = 21 ns, td(off) = 48 ns), integrated body diode with 65 ns reverse recovery time, and suitability for space-constrained industrial power supplies requiring <1.3 W channel dissipation on FR4 PCBs.
Technical Context
This MOSFET employs a planar vertical DMOS structure optimized for high-voltage switching with low conduction loss. Its gate threshold voltage range of 3.0–4.5 V ensures reliable turn-on with standard 5 V or 10 V logic-level drive while maintaining robust noise immunity.
The device integrates a body diode rated for 1.4 A reverse current and 65 ns trr, enabling synchronous rectification and freewheeling operation without external diodes in buck or half-bridge topologies. Thermal performance is characterized for FR4 boards (40 × 40 × 1.6 mm), with 139°C/W junction-to-ambient thermal resistance under DC conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 200 V - Supports input rails up to 170 V DC in offline SMPS or 48 V industrial bus systems with safety margin. |
| RDS(on) | 0.49 Ω (typ) @ VGS=10 V, ID=0.7 A - Enables ≤0.24 W conduction loss at 0.7 A, critical for thermally constrained TSSOP-8 layouts. |
| Qg | 10 nC - Reduces gate driver power requirement and enables >1 MHz switching in high-frequency DC-DC converters. |
| td(off) | 48 ns - Limits dead-time requirements in half-bridge configurations, minimizing shoot-through risk. |
| trr | 65 ns - Allows use as freewheeling switch in synchronous buck converters without significant voltage overshoot. |
| Pch | 1.3 W @ Ta=25°C on FR4 - Defines maximum continuous power handling without heatsink on standard PCBs. |
| VGS(th) | 3.0–4.5 V - Ensures full enhancement with 5 V microcontroller GPIO or dedicated gate drivers, avoiding partial turn-on losses. |
Pinout & Package
Package: TSSOP-8 (RENESAS code PTSP0008JB-B / JEITA code TTP-8DV), 4.4 mm × 3.0 mm footprint, 0.65 mm pitch, Ni/Pd/Au-plated terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common return path for load current; pins 1–3 internally bonded to reduce source inductance in high-di/dt applications. |
| 4 | Gate | Control input requiring ≤10 nC charge; sensitive to ESD (±30 V max); must be driven with low-impedance path to minimize ringing. |
| 5, 6, 7, 8 | Drain | High-voltage output node; pins 5–8 internally connected to handle 200 V blocking and 1.4 A continuous current with distributed thermal path. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 0.49 Ω typ reduces conduction loss by >30% vs. comparable 200 V TSSOP-8 MOSFETs, extending thermal headroom in sealed enclosures. |
| Low Qg | 10 nC minimizes gate drive power and enables efficient operation at 500 kHz–1 MHz, supporting compact magnetics in point-of-load converters. |
| Fast switching | 21 ns td(on) + 11 ns tr + 48 ns td(off) + 18 ns tf allows tight PWM control with minimal overlap loss in bridge circuits. |
| Integrated body diode | 65 ns trr and 0.8–1.2 V VDF support synchronous rectification in buck regulators without external Schottky diode cost/area penalty. |
| Thermal derating | 1.3 W Pch at 25°C ambient on FR4 board enables direct replacement of TO-220 devices in space-limited industrial controls when board area is constrained. |
Applications
| Industrial DC-DC Converters | Brushless DC Motor Drivers |
|---|---|
|
Use Scenario: Step-down conversion from 48 V bus to 12 V/5 V for PLC I/O modules and sensor interfaces. IC Role / Device Role / Timing Role: High-side or low-side synchronous rectifier switch operating at 300–500 kHz PWM frequency. Use Value: 0.49 Ω RDS(on) limits I²R loss to <0.5 W at 1 A load, enabling natural convection cooling in DIN-rail mounted enclosures. |
Use Scenario: Low-voltage (<60 V) three-phase inverter stage for small BLDC fans and pumps in HVAC systems. IC Role / Device Role / Timing Role: Phase-leg low-side switch with integrated body diode conducting freewheeling current during PWM off-time. Use Value: 65 ns trr prevents voltage spikes during commutation, eliminating need for external snubbers and reducing EMI filter complexity. |
| LED Constant-Current Drivers | Power Over Ethernet (PoE) Injectors |
|
Use Scenario: Buck-based constant-current LED driver for architectural lighting with 24–48 V input and 350 mA–700 mA output. IC Role / Device Role / Timing Role: Primary switching element controlling inductor current with precise duty-cycle modulation. Use Value: 10 nC Qg allows clean gate drive from low-power MCU timers, reducing BOM count versus discrete driver + MOSFET solutions. |
Use Scenario: 4-pair PoE++ (IEEE 802.3bt Type 4) injector delivering up to 90 W per port with active DC-DC isolation. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated flyback or active clamp forward converter. Use Value: 200 V VDSS withstands reflected transients from transformer leakage inductance, ensuring reliability under surge conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ROHM RJK0305DPB | Lower VDSS (100 V), lower RDS(on) (0.027 Ω), same TSSOP-8 package but higher ID (12 A). | Not suitable for >100 V bus applications; requires redesign for 200 V systems due to breakdown limitation. | Select only for 24–48 V systems where ultra-low RDS(on) justifies reduced voltage margin. |
| Vishay SI2308DS | Same VDSS (200 V), higher RDS(on) (1.2 Ω typ), higher Qg (15 nC), identical TSSOP-8 footprint. | Higher conduction and switching losses limit usable frequency to ≤200 kHz; less efficient in high-density designs. | Acceptable for cost-sensitive, low-frequency (<100 kHz) applications where thermal budget permits higher RDS(on). |
Compared with RJK0305DPB and SI2308DS, the HAT2085T-EL-E uniquely balances 200 V capability, sub-0.5 Ω RDS(on), and 10 nC Qg in TSSOP-8-making it optimal for 300–600 kHz industrial DC-DC converters where both voltage margin and efficiency are critical.
Availability
HAT2085T-EL-E is available at Aetrix Electronics and suitable for industrial DC-DC converters, brushless DC motor drivers, and LED constant-current drivers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production programs.
Supply support for HAT2085T-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and IoT markets.
The HAT2085T-EL-E belongs to Renesas' high-voltage power MOSFET product line, engineered specifically for compact, high-efficiency switching power supplies and motor control systems operating up to 200 V DC.
FAQ
What is the maximum continuous drain current rating for HAT2085T-EL-E?
The HAT2085T-EL-E has a maximum continuous drain current (ID) of 1.4 A at Ta = 25°C on a standard FR4 PCB (40 × 40 × 1.6 mm). This rating assumes no heatsink and accounts for thermal derating above ambient temperature-actual usable current drops to ~0.8 A at 75°C ambient due to 1.3 W channel dissipation limit and 139°C/W thermal resistance.
Does HAT2085T-EL-E have an integrated body diode, and what are its key parameters?
Yes, the HAT2085T-EL-E includes an integrated body diode with forward voltage (VDF) of 0.8–1.2 V at IF = 1.4 A and reverse recovery time (trr) of 65 ns under specified test conditions (diF/dt = 100 A/µs). This diode supports freewheeling and synchronous rectification without external components in buck or half-bridge topologies.
What is the gate threshold voltage range for HAT2085T-EL-E, and how does it affect drive requirements?
The HAT2085T-EL-E has a gate-to-source cutoff voltage (VGS(off)) range of 3.0–4.5 V at ID = 1 mA. This ensures full enhancement with standard 5 V logic or microcontroller outputs while providing noise immunity against spurious turn-on-no level-shifting is required for 5 V gate drive, unlike higher-threshold MOSFETs.
Can HAT2085T-EL-E be used in a half-bridge configuration, and what layout considerations apply?
Yes, the HAT2085T-EL-E is suitable for half-bridge configurations due to its 48 ns turn-off delay and 18 ns fall time, which minimize dead-time requirements. Layout must minimize source inductance by using wide copper pours for pins 1–3 (source) and short, low-inductance gate traces with local 10 Ω series resistance to damp ringing-critical for stable 500 kHz+ operation.
What is the thermal resistance (θJA) of HAT2085T-EL-E on a standard FR4 PCB?
The HAT2085T-EL-E exhibits a junction-to-ambient thermal resistance (θJA) of 139°C/W when mounted on a 40 × 40 × 1.6 mm FR4 board with no heatsink. This value is derived from transient thermal impedance data and defines the maximum power dissipation (1.3 W at 25°C ambient) before exceeding the 150°C channel temperature limit.
HAT2085T-EL-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HAT2085T-EL-E FAQ
1.How can I place an order for HAT2085T-EL-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HAT2085T-EL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HAT2085T-EL-E reliable?
The price and inventory of HAT2085T-EL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HAT2085T-EL-E is usually 5 days.
3.What payment methods are accepted for HAT2085T-EL-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HAT2085T-EL-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HAT2085T-EL-E?
HAT2085T-EL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HAT2085T-EL-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HAT2085T-EL-E?
For technical support, including HAT2085T-EL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HAT2085T-EL-E requirements.
6.How does Aetrix verify that HAT2085T-EL-E is sourced from the original manufacturer or authorized distributors?
All HAT2085T-EL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HAT2085T-EL-E meets industry standards.
7.What is the process for return or replacement of HAT2085T-EL-E?
All HAT2085T-EL-E units undergo pre-shipment inspection (PSI). If there is an issue with HAT2085T-EL-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HAT2085T-EL-E part is unused and in its original packaging.
Return procedure for HAT2085T-EL-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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