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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas HAT2088R-EL-E

Name: HAT2088R-EL-E
Brand: Renesas
SKU: HAT2088R-EL-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: HAT2088R-EL-E

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: HAT2088R-EL-E.pdf

Description:: MOSFET N-CH 200V 2A 8SOP

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Product details

Overview

HAT2088R-EL-E from Renesas Electronics is a silicon N-channel MOSFET designed for high-speed power switching in DC-DC converters and motor drive circuits, featuring 200 V V_DSS, 2 A continuous drain current, and 0.35 Ω typical R_DS(on) at V_GS = 10 V - enabling efficient low-side switching in industrial power supplies and solenoid drivers.

For engineers reviewing the HAT2088R-EL-E datasheet, HAT2088R-EL-E pinout, HAT2088R-EL-E application, or HAT2088R-EL-E equivalent, key selection criteria include its SOP-8 (FP-8DAV) package thermal performance on FR4 boards, 16 A pulsed drain capability, and body diode reverse recovery time of 65 ns - critical for synchronous rectification and flyback snubberless designs.

Technical Context

This MOSFET employs planar vertical DMOS architecture with optimized gate charge distribution: Q_g = 13 nC and Q_gd/Q_gs ratio of ~3:1 supports fast, controllable switching with minimal Miller-induced shoot-through risk. Its gate threshold voltage range (3.0–4.5 V) ensures robust noise immunity in 5 V logic-driven systems.

Thermal design relies on transient impedance characteristics defined for FR4 (40 × 40 × 1.6 mm): θ_ch–f = 83.3°C/W enables 2.5 W channel dissipation at T_c = 75°C, while safe operating area (SOA) curves confirm single-pulse robustness up to 100 V × 8 A with 10 µs pulse width.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - Withstands 200 V drain-source blocking voltage, suitable for 100–120 VAC input-derived 160 V bus applications.
R_DS(on) (typ)	0.35 Ω at V_GS = 10 V, I_D = 1 A - Delivers ≤0.35 W conduction loss at 1 A, reducing heatsink requirements in compact power stages.
Q_g	13 nC - Enables <50 ns turn-on delay with 10 Ω gate resistor, supporting >500 kHz switching in hard-switched topologies.
t_r/t_f	8.5 ns / 11 ns - Fast edge rates minimize switching transition losses, critical for high-efficiency SMPS below 200 kHz.
trr	65 ns - Body diode recovery time allows use in non-synchronous flyback and buck converters without external Schottky catch diodes.
P_ch	2.5 W on FR4 board - Specifies maximum steady-state power dissipation under defined PCB copper area and ambient conditions.
V_GS(th)	3.0–4.5 V - Gate threshold range ensures reliable turn-on with standard 5 V microcontroller GPIO while rejecting sub-2 V noise.

Pinout & Package

Package: SOP-8 (JEITA FP-8DAV), Renesas code PRSP0008DD-D - surface-mount plastic package with 1.27 mm lead pitch, optimized for automated assembly and thermal transfer via exposed drain pads (pins 5–8).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common return path for load current; electrically tied to internal substrate; requires low-impedance PCB trace to ground plane.
4	Gate	Control terminal; driven by logic-level signal; requires series resistor (10 Ω typical) to damp ringing and limit peak current.
5, 6, 7, 8	Drain	High-side connection to switched voltage rail; pins are internally paralleled for lower resistance and enhanced thermal conduction to PCB copper.

Key Features

Feature	Design Value
Low R_DS(on)	0.35 Ω typ at 10 V drive reduces conduction loss by >40% vs. legacy 0.6 Ω MOSFETs in 1–2 A power stages.
Fast switching	19 ns t_d(on) + 8.5 ns t_r enables high-frequency operation with minimized transition losses in compact converters.
Integrated body diode	65 ns trr and 0.8–1.2 V V_DF support freewheeling in inductive loads without external diode in cost-sensitive designs.
SOP-8 thermal design	Drain-connected pins 5–8 provide direct thermal path to PCB copper, achieving 83.3°C/W junction-to-ambient on standard FR4.
High V_GSS rating	±30 V gate-source voltage tolerance prevents damage during ESD events or gate driver overshoot in noisy environments.

Applications

DC-DC Converter Switch	Brushed DC Motor Driver
Use Scenario: Primary-side switch in 12–24 V input, 5–12 V output buck converter for industrial control modules. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch controlling energy transfer into output inductor during PWM on-time. Use Value: 0.35 Ω R_DS(on) limits I²R loss to 0.35 W at 1 A, enabling >92% efficiency without forced air cooling.	Use Scenario: H-bridge low-side switch driving 12 V, 1.5 A brushed DC motor in automated valve actuators. IC Role / Device Role / Timing Role: Power stage transistor commutating motor current direction; body diode handles back-EMF recirculation. Use Value: 65 ns trr ensures clean current reversal with minimal voltage spikes, eliminating need for external flyback diodes.
Solenoid Driver	LED Constant-Current Switch
Use Scenario: 24 V solenoid actuator control in HVAC damper systems requiring 2 A peak hold current. IC Role / Device Role / Timing Role: High-speed on/off switch enabling PWM-based current regulation and soft-start sequencing. Use Value: 16 A pulsed drain rating supports 10× inrush current handling during solenoid pull-in phase without device stress.	Use Scenario: Dimmable LED string driver with 200 V bus voltage and 350 mA constant current per channel. IC Role / Device Role / Timing Role: Precision current sink switch modulated at 1–10 kHz for analog dimming control. Use Value: Tight V_GS(th) tolerance (3.0–4.5 V) ensures consistent turn-on across temperature, maintaining stable LED current regulation.

DC-DC Converter Switch

Brushed DC Motor Driver

Use Scenario: Primary-side switch in 12–24 V input, 5–12 V output buck converter for industrial control modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch controlling energy transfer into output inductor during PWM on-time.

Use Value: 0.35 Ω R_DS(on) limits I²R loss to 0.35 W at 1 A, enabling >92% efficiency without forced air cooling.

Use Scenario: H-bridge low-side switch driving 12 V, 1.5 A brushed DC motor in automated valve actuators.

IC Role / Device Role / Timing Role: Power stage transistor commutating motor current direction; body diode handles back-EMF recirculation.

Use Value: 65 ns trr ensures clean current reversal with minimal voltage spikes, eliminating need for external flyback diodes.

Solenoid Driver

LED Constant-Current Switch

Use Scenario: 24 V solenoid actuator control in HVAC damper systems requiring 2 A peak hold current.

IC Role / Device Role / Timing Role: High-speed on/off switch enabling PWM-based current regulation and soft-start sequencing.

Use Value: 16 A pulsed drain rating supports 10× inrush current handling during solenoid pull-in phase without device stress.

Use Scenario: Dimmable LED string driver with 200 V bus voltage and 350 mA constant current per channel.

IC Role / Device Role / Timing Role: Precision current sink switch modulated at 1–10 kHz for analog dimming control.

Use Value: Tight V_GS(th) tolerance (3.0–4.5 V) ensures consistent turn-on across temperature, maintaining stable LED current regulation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ROHM RJK0305DPB	Lower R_DS(on) (0.23 Ω), same SOP-8 package, but V_DSS = 30 V - unsuitable for 200 V bus applications.	Restricted to ≤30 V systems like USB PD adapters or low-voltage motor drives.	Select only when V_DSS requirement is ≤30 V and lower conduction loss is prioritized over voltage rating.
ON Semiconductor NTMFS4C09NT1G	Higher V_DSS (100 V), R_DS(on) = 0.0045 Ω, PowerTrench® SO-8FL package - superior thermal performance but incompatible pinout.	Requires PCB redesign due to different drain/source terminal layout and thermal pad placement.	Choose for high-current, low-voltage applications where thermal density exceeds HAT2088R-EL-E's 2.5 W limit.

Compared with RJK0305DPB and NTMFS4C09NT1G, HAT2088R-EL-E uniquely balances 200 V rating, SOP-8 compatibility, and 0.35 Ω R_DS(on) for mid-power industrial switching - making it irreplaceable in 100–160 V bus designs without layout change or derating.

Availability

HAT2088R-EL-E is available at Aetrix Electronics and suitable for industrial power supplies, motor control modules, and solenoid actuation systems requiring stable component supply and long-term production continuity.

Supply support for HAT2088R-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and power devices for industrial, automotive, and infrastructure markets.

HAT2088R-EL-E belongs to Renesas' legacy high-voltage discrete MOSFET product line, engineered for reliability in industrial power conversion and electromechanical control applications.

FAQ

What is the maximum continuous drain current rating for HAT2088R-EL-E?

The HAT2088R-EL-E has a continuous drain current (I_D) rating of 2 A at T_a = 25°C on a standard FR4 board (40 × 40 × 1.6 mm). This rating decreases with rising ambient temperature and is limited by thermal resistance - at 75°C case temperature, the device supports ≤1.5 A continuous operation to maintain safe channel temperature below 150°C. Derating curves are provided in the HAT2088R-EL-E datasheet Figure 3.

Does HAT2088R-EL-E have an integrated body diode, and what are its key parameters?

Yes, the HAT2088R-EL-E includes an integrated body-drain diode. Its forward voltage (V_DF) is 0.8–1.2 V at I_F = 2 A and V_GS = 0, and its reverse recovery time (t_rr) is 65 ns under specified test conditions (I_F = 2 A, di_F/dt = 100 A/µs). These values enable reliable freewheeling in inductive loads without external diodes in many low-to-mid frequency applications.

What is the gate threshold voltage range for HAT2088R-EL-E, and how does it affect drive compatibility?

The HAT2088R-EL-E has a gate-to-source cutoff voltage (V_GS(off)) range of 3.0–4.5 V at I_D = 1 mA. This ensures full enhancement with standard 5 V logic-level drivers while providing margin against false turn-on from noise or leakage. It is not compatible with 3.3 V-only microcontrollers without level-shifting, as V_GS < 3.0 V may result in incomplete turn-on and excessive R_DS(on).

Can HAT2088R-EL-E be used in avalanche-rated applications?

No, the HAT2088R-EL-E datasheet does not specify avalanche energy rating (E_AS) or guaranteed avalanche capability. Its absolute maximum ratings define V_DSS = 200 V as a DC blocking voltage only. Operation beyond this voltage - even briefly - risks irreversible device failure. For avalanche-tolerant designs, select devices explicitly rated and characterized for repetitive avalanche, such as certain STMicroelectronics or Infineon automotive-grade MOSFETs.

What is the recommended PCB layout practice for thermal management of HAT2088R-EL-E?

For optimal thermal performance, the HAT2088R-EL-E requires generous copper pour connected to pins 5–8 (Drain) on both top and bottom layers, with multiple thermal vias (≥8 × 0.3 mm) beneath the drain pad area. The source pins (1–3) should connect to a dedicated ground plane with short, wide traces. Renesas specifies thermal performance based on a 40 × 40 × 1.6 mm FR4 board - deviating significantly from this layout invalidates the 2.5 W P_ch rating stated in the HAT2088R-EL-E datasheet.

HAT2088R-EL-E Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 440mOhm @ 1A, 10V

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 450 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOP

HAT2088R-EL-E FAQ

1.How can I place an order for HAT2088R-EL-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HAT2088R-EL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HAT2088R-EL-E reliable?

The price and inventory of HAT2088R-EL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HAT2088R-EL-E is usually 5 days.

3.What payment methods are accepted for HAT2088R-EL-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HAT2088R-EL-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HAT2088R-EL-E?

HAT2088R-EL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HAT2088R-EL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HAT2088R-EL-E?

For technical support, including HAT2088R-EL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HAT2088R-EL-E requirements.

6.How does Aetrix verify that HAT2088R-EL-E is sourced from the original manufacturer or authorized distributors?

All HAT2088R-EL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HAT2088R-EL-E meets industry standards.

7.What is the process for return or replacement of HAT2088R-EL-E?

All HAT2088R-EL-E units undergo pre-shipment inspection (PSI). If there is an issue with HAT2088R-EL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HAT2088R-EL-E part is unused and in its original packaging.

Return procedure for HAT2088R-EL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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