Renesas HAT2096H-EL-E

Overview

HAT2096H-EL-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-efficiency DC-DC conversion and load switching in industrial power supplies, motor drivers, and e-mobility subsystems. It delivers 40 A continuous drain current at 30 V V_DSS, with R_DS(on) = 4.2 mΩ (typ.) at V_GS = 10 V and 7.0 mΩ (typ.) at V_GS = 4.5 V, enabling low-conduction-loss operation in 12 V and 24 V systems.

For engineers reviewing the HAT2096H-EL-E datasheet, HAT2096H-EL-E pinout, HAT2096H-EL-E application, or HAT2096H-EL-E equivalent, key selection criteria include gate-drive compatibility down to 4.5 V, thermal performance under pulsed load conditions, body-diode reverse recovery time (t_rr = 60 ns), and LFPAK package suitability for high-density PCB layouts with enhanced thermal conduction.

Technical Context

This MOSFET employs a trench-gate process optimized for low R_DS(on) and fast switching, supporting high-frequency synchronous rectification in buck converters and active OR-ing circuits. Its gate charge profile (Q_g = 40 nC, Q_gd = 8 nC) enables efficient drive with standard gate drivers while maintaining low switching losses at 100–500 kHz operating frequencies.

The integrated body diode exhibits low forward voltage (V_DF = 0.85 V typ. at I_F = 40 A) and controlled reverse recovery (t_rr = 60 ns), reducing shoot-through risk and EMI in half-bridge topologies. Thermal design is supported by a channel-to-case thermal resistance θ_ch–c of 6.25°C/W and a maximum channel temperature rating of 150°C.

Key Specifications

Pinout & Package

Package: LFPAK (RENESAS code PTZZ0005DA-A), surface-mount, copper-clip construction with exposed drain pad for low thermal resistance and high-current routing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Compared with IPB034N04LGATMA1 and DMTH4007LPSQ-13, the HAT2096H-EL-E offers balanced 4.5 V drivability, verified t_rr performance, and proven thermal robustness in high-pulse industrial loads-making it optimal for cost-sensitive, thermally demanding 12–24 V switching where both conduction and recovery behavior must be tightly controlled.

Availability

HAT2096H-EL-E is available at Aetrix Electronics and suitable for industrial motor drives, automotive body electronics, and server power delivery systems requiring stable component supply and long-term production continuity.

Supply support for HAT2096H-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC products for automotive, industrial, infrastructure, and IoT applications.

The HAT2096H-EL-E belongs to Renesas' silicon power MOSFET portfolio engineered for high-efficiency, high-reliability switching in 12–48 V power conversion and load management systems.

FAQ

What is the maximum continuous drain current rating for the HAT2096H-EL-E?

The HAT2096H-EL-E is rated for 40 A continuous drain current (I_D) at T_c = 25°C, with derating required above case temperatures of 25°C per the power vs. temperature curve. At T_c = 75°C, the usable I_D drops to approximately 25 A to maintain safe channel temperature limits. This rating assumes proper PCB copper area and thermal vias beneath the exposed drain pad.

Does the HAT2096H-EL-E support logic-level gate drive?

Yes, the HAT2096H-EL-E supports true logic-level gate drive with guaranteed R_DS(on) ≤ 10 mΩ at V_GS = 4.5 V. Its gate threshold voltage (V_GS(off)) ranges from 1.0 V to 2.5 V, ensuring reliable turn-on with standard 5 V CMOS outputs. This eliminates the need for external gate drivers in many 12 V and 24 V control applications.

What is the thermal resistance from channel to case for the HAT2096H-EL-E?

The HAT2096H-EL-E has a channel-to-case thermal resistance (θ_ch–c) of 6.25°C/W, measured under standard test conditions (T_c = 25°C). This value is enabled by its LFPAK package's copper-clip construction and exposed drain pad, allowing efficient heat transfer to the PCB. Actual thermal performance depends on board layout, copper thickness, and number of thermal vias.

Is the body diode of the HAT2096H-EL-E characterized for reverse recovery?

Yes, the body-drain diode of the HAT2096H-EL-E is fully characterized: reverse recovery time (t_rr) is 60 ns typical at I_F = 40 A, di_F/dt = 50 A/µs, and V_GS = 0. Forward voltage (V_DF) is 0.85 V typical under the same conditions. These parameters are validated in the official Renesas datasheet Rev.4.00 and support use in synchronous rectification and freewheeling applications.

What package type does the HAT2096H-EL-E use, and what are its key mechanical features?

The HAT2096H-EL-E uses the LFPAK package (RENESAS code PTZZ0005DA-A), also known as SC-100. Key mechanical features include a 5-pin surface-mount footprint, 4.0 mm × 4.2 mm body size, 0.75 mm max height, and an exposed copper drain pad on the bottom for low thermal resistance and high-current conduction. The package mass is 0.080 g.