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Renesas HAT2099H-EL-E
- Part No.:
- HAT2099H-EL-E
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- SC-100, SOT-669
- Datasheet:
-
HAT2099H-EL-E.pdf
- Description:
- MOSFET N-CH 30V 50A LFPAK
- Quantity:
- Payment:
- Shipping:
Inventory:9,141
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Product details
Overview
HAT2099H-EL-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-current, low-voltage power switching applications such as DC-DC converters and motor drivers. It features RDS(on) = 2.9 mΩ (typ.) at VGS = 10 V, 50 A continuous drain current, and 30 V drain-source breakdown voltage in an LFPAK (PTZZ0005DA-A) package.
For engineers reviewing the HAT2099H-EL-E datasheet, HAT2099H-EL-E pinout, HAT2099H-EL-E application, or HAT2099H-EL-E equivalent, key selection criteria include gate drive compatibility down to 4.5 V, avalanche energy rating of 2.5 mJ, body-diode reverse recovery time of 60 ns, and thermal resistance θch–c = 4.17°C/W - all critical for high-efficiency, high-reliability power stage design.
Technical Context
This MOSFET employs a trench-gate process optimized for low on-resistance and fast switching. Its gate charge profile (Qg = 75 nC, Qgd = 14 nC) supports efficient operation in synchronous buck topologies with 10 V gate drive, while the 4.5 V gate threshold enables direct interfacing with 5 V logic and microcontroller GPIOs without level-shifting.
The integrated body diode exhibits VDF = 0.85 V (typ.) at 50 A and trr = 60 ns under di/dt = 50 A/µs, making it suitable for freewheeling paths where reverse recovery loss must be minimized. The device is rated for Tch = 150°C and operates within the Standard quality grade per Renesas classification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage in power switch applications; defines upper limit for input bus voltage in 24 V systems. |
| RDS(on) @ VGS = 10 V | 2.9 mΩ (typ.) - Enables <150 mW conduction loss at 25 A, supporting high-efficiency power stages. |
| ID (continuous) | 50 A - Supports high-current loads such as BLDC motor phases or server VRM output stages. |
| Qg | 75 nC - Determines gate driver power requirement and switching speed; compatible with standard 1–2 A peak gate drivers. |
| trr | 60 ns - Low reverse recovery time reduces shoot-through risk and EMI in synchronous rectification. |
| θch–c | 4.17°C/W - Thermal resistance from channel to case enables 30 W dissipation at ΔT = 125°C with adequate heatsinking. |
| VGS(th) | 1.0–2.5 V - Ensures reliable turn-on with 3.3 V or 5 V logic-level signals without external biasing. |
Pinout & Package
Package: LFPAK (RENESAS code PTZZ0005DA-A), surface-mount, thermally enhanced leadframe package with exposed drain pad; dimensions 4.9 × 3.95 × 1.3 mm (L × W × H), mass 0.080 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Three parallel source terminals reduce parasitic inductance and improve current sharing in high-di/dt switching. |
| 4 | Gate | Single gate input with ±20 V maximum rating; low input capacitance (Ciss = 4750 pF) eases driver design. |
| 5 | Drain | Exposed drain pad serves as primary thermal path and high-current return; electrically connected to PCB copper pour. |
Key Features
| Feature | Design Value |
|---|---|
| 4.5 V gate drive capability | Enables direct control from 5 V microcontrollers or logic ICs without gate driver ICs, reducing BOM count and layout area. |
| Low RDS(on) (2.9 mΩ typ.) | Minimizes I²R conduction losses in high-current paths, improving efficiency in battery-powered and energy-sensitive systems. |
| Fast switching (td(off) = 85 ns) | Supports high-frequency PWM (>500 kHz) operation in compact DC-DC converters while limiting switching loss. |
| Integrated body diode with trr = 60 ns | Reduces reverse recovery charge and associated losses in synchronous rectifier and half-bridge configurations. |
| Avalanche-rated (IAP = 5 A, EAR = 2.5 mJ) | Withstands single-pulse inductive energy spikes without failure, enhancing robustness in motor drive and relay-switching circuits. |
Applications
| DC-DC Synchronous Buck Converter | BLDC Motor Phase Switch |
|---|---|
Use Scenario: High-efficiency 12 V–24 V input to 3.3 V/5 V/12 V output conversion in industrial PLCs and telecom power supplies. IC Role / Device Role / Timing Role: High-side or low-side power switch in synchronous rectification topology; handles up to 50 A continuous current. Use Value: Low RDS(on) and fast switching minimize total power loss (<1.2 W at 25 A), enabling compact thermal design without forced air cooling. | Use Scenario: Three-phase inverter stage driving 200–500 W brushless DC motors in HVAC blowers and power tools. IC Role / Device Role / Timing Role: Low-side switching element with integrated body diode conducting freewheeling current during PWM off-time. Use Value: 60 ns trr and low Qgd suppress voltage overshoot and reduce EMI generation during commutation transitions. |
| Hot-Swap Power Controller | High-Current Load Switch |
Use Scenario: Inrush-limited 24 V board-level power insertion in modular server backplanes and network switches. IC Role / Device Role / Timing Role: Main pass transistor controlled via external gate resistor and RC timing network for soft-start ramp rate control. Use Value: 200 A pulsed drain current rating and 150°C channel temperature tolerance support safe handling of transient surge currents during hot-plug events. | Use Scenario: Remote ON/OFF control of 30–40 A subsystems (e.g., display backlight, sensor array, FPGA core rail) in embedded edge devices. IC Role / Device Role / Timing Role: Single-ended load switch with gate driven by microcontroller GPIO; body diode blocks reverse current flow. Use Value: 4.5 V gate threshold ensures full enhancement with 3.3 V logic, eliminating need for level shifters and simplifying firmware control. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL3803PbF | RDS(on) = 3.0 mΩ (VGS = 10 V); TO-220AB package; higher θJA (62°C/W vs. LFPAK's ~50°C/W) | Larger footprint and lower thermal performance; requires heatsink for >20 A continuous operation. | Choose when through-hole assembly or legacy footprint compatibility is required; not drop-in for HAT2099H-EL-E's LFPAK layout. |
| DMTH3007LPS-13 | RDS(on) = 2.8 mΩ (VGS = 10 V); PowerSO-8 package; Qg = 62 nC (lower than HAT2099H-EL-E's 75 nC) | Similar thermal performance but smaller 5 × 6 mm outline; lacks specified avalanche rating. | Prefer for space-constrained designs needing faster switching; verify system-level avalanche immunity if used in inductive switching. |
Compared with IRL3803PbF and DMTH3007LPS-13, the HAT2099H-EL-E offers superior thermal coupling via its exposed-drain LFPAK package and guaranteed avalanche ruggedness - critical for motor drive and hot-swap reliability - while maintaining logic-level gate drive and competitive on-resistance.
Availability
HAT2099H-EL-E is available at Aetrix Electronics and suitable for DC-DC converter design, BLDC motor control, hot-swap power management, and high-current load switching requiring stable component supply and long-term production continuity.
Supply support for HAT2099H-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog and power devices, and SoC solutions for industrial, automotive, and infrastructure markets.
The HAT2099H-EL-E belongs to Renesas' silicon power MOSFET product line, engineered for high-efficiency, high-reliability power switching in industrial and consumer equipment operating up to 30 V bus voltages.
FAQ
What is the maximum continuous drain current rating for HAT2099H-EL-E?
The HAT2099H-EL-E is rated for 50 A continuous drain current (ID) at Tc = 25°C. This rating assumes proper PCB copper area for thermal conduction and derates linearly above 25°C case temperature per the power vs. temperature derating curve in the datasheet. At Tc = 75°C, the usable continuous current drops to approximately 30 A.
Does HAT2099H-EL-E support 3.3 V logic-level gate drive?
No - the HAT2099H-EL-E is specified for 4.5 V gate drive capability, meaning it achieves full enhancement (low RDS(on)) with VGS ≥ 4.5 V. While its gate threshold voltage (VGS(th)) ranges from 1.0 V to 2.5 V, applying only 3.3 V results in significantly elevated RDS(on) (~12–15 mΩ), increasing conduction loss. For true 3.3 V logic compatibility, a different MOSFET with lower VGS(th) and guaranteed RDS(on) at 3.3 V is required.
What is the thermal resistance from channel to case (θch–c) for HAT2099H-EL-E?
The HAT2099H-EL-E has a channel-to-case thermal resistance (θch–c) of 4.17°C/W, measured under standard test conditions (Tc = 25°C). This value reflects heat transfer from the silicon die to the exposed drain pad, and is critical for calculating junction temperature rise when mounted on a PCB with appropriate copper thermal vias and heatsinking.
Is HAT2099H-EL-E suitable for avalanche operation?
Yes - the HAT2099H-EL-E is explicitly rated for repetitive avalanche operation with IAP = 5 A and EAR = 2.5 mJ at Tch = 25°C and Rg ≥ 50 Ω. This ruggedness allows safe operation in circuits with inductive loads (e.g., motor windings, solenoids) where voltage spikes may exceed VDSS, provided avalanche energy per pulse remains within specification limits.
What package type does HAT2099H-EL-E use, and what are its key mechanical features?
HAT2099H-EL-E uses the LFPAK package (RENESAS code PTZZ0005DA-A), also known as SC-100. Key features include a 4.9 mm × 3.95 mm footprint, 1.3 mm max height, exposed drain pad for thermal and electrical connection, three paralleled source leads to reduce inductance, and Ni/Pd/Au plating for solderability. Its JEITA package code is SC-100, and typical mass is 0.080 g.
HAT2099H-EL-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- SC-100, SOT-669
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 75 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4750 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 30W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK
HAT2099H-EL-E FAQ
1.How can I place an order for HAT2099H-EL-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HAT2099H-EL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HAT2099H-EL-E reliable?
The price and inventory of HAT2099H-EL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HAT2099H-EL-E is usually 5 days.
3.What payment methods are accepted for HAT2099H-EL-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HAT2099H-EL-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HAT2099H-EL-E?
HAT2099H-EL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HAT2099H-EL-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HAT2099H-EL-E?
For technical support, including HAT2099H-EL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HAT2099H-EL-E requirements.
6.How does Aetrix verify that HAT2099H-EL-E is sourced from the original manufacturer or authorized distributors?
All HAT2099H-EL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HAT2099H-EL-E meets industry standards.
7.What is the process for return or replacement of HAT2099H-EL-E?
All HAT2099H-EL-E units undergo pre-shipment inspection (PSI). If there is an issue with HAT2099H-EL-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HAT2099H-EL-E part is unused and in its original packaging.
Return procedure for HAT2099H-EL-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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