Renesas HAT2116H-EL-E

Overview

HAT2116H-EL-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-efficiency DC-DC conversion and load switching in industrial power supplies, motor drivers, and e-bike controllers. It delivers 30 A continuous drain current at 30 V V_DSS, with R_DS(on) = 6.3 mΩ (typ.) at V_GS = 10 V and 10.5 mΩ (typ.) at V_GS = 4.5 V, enabling low-conduction-loss operation in 5 V–12 V gate-driven systems.

For engineers reviewing the HAT2116H-EL-E datasheet, HAT2116H-EL-E pinout, HAT2116H-EL-E application, or HAT2116H-EL-E equivalent, key selection criteria include its LFPAK (PTZZ0005DA-A) package thermal performance, body-diode reverse recovery time (t_rr = 60 ns), and gate charge (Q_g = 26 nC), critical for synchronous rectification and high-frequency PWM switching.

Technical Context

This MOSFET employs a trench-gate process optimized for low R_DS(on) and fast switching. Its 30 V V_DSS rating supports 24 V nominal bus applications with margin, while ±20 V V_GSS allows robust gate drive design against transients. The device features an integrated body diode with V_DF = 0.85 V (typ.) at 30 A, suitable for freewheeling paths in buck converters and half-bridge topologies.

Thermal design is enabled by its LFPAK package, offering θ_ch–c = 8.33°C/W (case-to-heatsink), and rated for T_ch = 150°C. Pulse operation supports ID(pulse) = 120 A (PW ≤ 10 µs, duty ≤ 1%), making it appropriate for short-duration surge handling in motor start-up and inrush limiting circuits.

Key Specifications

Pinout & Package

Package: LFPAK (RENESAS code PTZZ0005DA-A), surface-mount, thermally enhanced leadframe package with exposed drain pad. Dimensions: 4.9 × 3.95 × 1.3 mm (L × W × H), mass = 0.080 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Compared with IRL3803PbF and DMN3025LSD-13, the HAT2116H-EL-E offers superior thermal performance per unit area (LFPAK vs. TO-220/SO-8FL), lowest Q_g/R_DS(on) ratio among 30 V logic-level MOSFETs in its class, and factory-optimized body-diode recovery-making it optimal for high-frequency, high-density industrial power stages.

Availability

HAT2116H-EL-E is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power supplies, and battery management systems requiring stable component supply across multi-year production cycles.

Supply support for HAT2116H-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The HAT2116H-EL-E belongs to Renesas' logic-level power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in space-constrained industrial power systems operating from 5 V to 24 V gate drive sources.

FAQ

What is the maximum continuous drain current rating for HAT2116H-EL-E at 75°C case temperature?

The HAT2116H-EL-E supports 30 A continuous drain current at T_c = 25°C. At T_c = 75°C, derating applies per the Power vs. Temperature Derating curve on page 3 of the datasheet: P_ch drops to ~9.5 W, corresponding to approximately 22 A continuous (calculated as √(9.5 W / 0.0105 Ω) ≈ 21.3 A). Always verify thermal layout with actual PCB copper area and airflow before finalizing design.

Does HAT2116H-EL-E have avalanche capability, and is it rated for repetitive operation?

Yes, the HAT2116H-EL-E is specified with V_(BR)DSS = 30 V and undergoes 100% production avalanche testing per Renesas standard. However, the datasheet does not specify repetitive avalanche energy (E_AS) or test conditions. For repetitive inductive switching, ensure V_DS never exceeds 30 V under worst-case conditions and use snubbers or clamping circuits to limit voltage overshoot during turn-off.

Can HAT2116H-EL-E be used in parallel configurations, and what layout considerations apply?

Yes, HAT2116H-EL-E supports paralleling due to its positive temperature coefficient of R_DS(on). To ensure current sharing, use symmetrical PCB traces with matched lengths and widths for all source/gate/drain connections, place gate resistors close to each device's gate pin, and avoid shared source inductance by using Kelvin-source routing. Thermal coupling between devices must also be minimized to prevent thermal runaway.

What is the recommended gate resistor value for switching HAT2116H-EL-E at 1 MHz in a synchronous buck converter?

For 1 MHz operation, a gate resistor of 2.2 Ω to 4.7 Ω is recommended to balance switching speed and gate driver stress. With Q_g = 26 nC and typical driver output impedance <1 Ω, R_g = 3.3 Ω yields ~10 ns rise/fall times (per t_r ≈ 2.2 × R_g × C_iss). Verify waveform integrity with oscilloscope measurements; increase R_g if ringing or overshoot occurs, especially with long gate traces.

Is HAT2116H-EL-E compliant with RoHS and REACH regulations?

Yes, HAT2116H-EL-E is RoHS-compliant (lead-free, halogen-free) and meets REACH SVHC requirements, as confirmed by Renesas' material declarations and certificate of compliance. The LFPAK package uses Ni/Pd/Au plating, and the device carries the "Green" marking per JEDEC J-STD-609. Full compliance documentation is available upon request from Aetrix Electronics or directly from Renesas.