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Renesas HAT2140H-EL-E
- Part No.:
- HAT2140H-EL-E
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- SC-100, SOT-669
- Datasheet:
-
HAT2140H-EL-E.pdf
- Description:
- MOSFET N-CH 100V 25A LFPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,169
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Product details
Overview
HAT2140H-EL-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-efficiency DC-DC conversion and motor drive switching applications, featuring 100 V VDSS, 25 A continuous drain current (ID), 12.5 mΩ typical RDS(on) at VGS = 10 V, and LFPAK (PTZZ0005DA-A) surface-mount package optimized for thermal performance and high-density PCB layouts.
For engineers reviewing the HAT2140H-EL-E datasheet, HAT2140H-EL-E pinout, HAT2140H-EL-E application, or HAT2140H-EL-E equivalent, key selection criteria include its 7 V gate-drive capability, low Qg (105 nC), fast switching (td(off) = 100 ns), body diode recovery time (trr = 55 ns), and suitability for automotive-grade non-safety-critical power stages.
Technical Context
This MOSFET employs a trench-gate process to achieve low on-resistance and high cell density in a compact LFPAK package. Its gate threshold voltage (VGS(off) = 2.0–3.5 V) enables reliable enhancement-mode operation with standard logic-level or 7 V gate drivers.
The device integrates a robust body diode with VDF = 0.83 V (typ.) at IF = 25 A and trr = 55 ns under specified dI/dt conditions, supporting synchronous rectification and freewheeling in buck converters and half-bridge motor drives without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Supports 48 V nominal bus systems with ≥2× safety margin against transients. |
| RDS(on) (VGS = 10 V) | 12.5 mΩ typ. - Enables <1.6 W conduction loss at 12.5 A, reducing heatsink requirements. |
| ID (continuous) | 25 A - Rated for sustained current in thermally managed PCBs with copper pour and 2 oz. copper layers. |
| Qg | 105 nC - Determines gate driver power demand; compatible with common 1–2 A peak gate drivers. |
| trr | 55 ns - Limits reverse recovery losses in hard-switched topologies; avoids shoot-through risk in bridge legs. |
| Pch | 30 W - Specifies maximum channel dissipation at Tc = 25°C; requires thermal design for real-world Tc. |
Pinout & Package
Package: LFPAK (RENESAS code PTZZ0005DA-A), SC-100 compliant, 5-terminal surface-mount package with exposed drain pad for enhanced thermal transfer and mechanical robustness.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source connection for all internal cells; electrically tied to PCB ground plane via multiple solder pads. |
| 4 | Gate | Control input requiring ≤±20 V rating; low Ciss (6500 pF) eases high-frequency drive stability. |
| 5 | Drain | Main power output terminal; internally connected to exposed copper pad for direct thermal path to PCB copper. |
Key Features
| Feature | Design Value |
|---|---|
| 7 V gate drive compatibility | Operates fully enhanced with 7 V logic-level gate signals-eliminates need for gate boosters in 5–7 V control domains. |
| Low RDS(on) × Qg figure of merit | 12.5 mΩ × 105 nC = 1313 mΩ·nC-balances conduction and switching loss for high-frequency SMPS (≤500 kHz). |
| Fast body diode recovery | trr = 55 ns enables efficient freewheeling in synchronous buck converters without external diode snubbing. |
| LFPAK thermal performance | 0.080 g mass and exposed drain pad deliver lower junction-to-board thermal resistance vs. SO-8 or DPAK equivalents. |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: Primary high-side switch in 12–48 V input, 3–12 V output isolated/non-isolated buck regulators for industrial PLC I/O modules. IC Role / Device Role / Timing Role: Power switching element handling 25 A peak load current with PWM frequencies up to 300 kHz. Use Value: Low RDS(on) minimizes conduction loss; fast trr prevents cross-conduction during dead-time transitions. |
Use Scenario: Half-bridge high-side switch in 24 V brushed motor control for HVAC actuators and valve positioners. IC Role / Device Role / Timing Role: High-current unidirectional power switch controlled by microcontroller GPIO with integrated gate driver. Use Value: 7 V gate drive allows direct interface to 5 V MCU outputs via simple level-shifting; low Qg ensures fast turn-on/turn-off timing. |
| LED Constant-Current Driver | Power OR-ing Circuit |
Use Scenario: Switching element in constant-current LED driver for architectural lighting systems operating from 36 V DC bus. IC Role / Device Role / Timing Role: PWM-controlled current regulator using source-follower sensing and high-side switching topology. Use Value: Tight VGS(off) tolerance (2.0–3.5 V) ensures stable current regulation across temperature and unit variation. |
Use Scenario: Back-to-back configuration for redundant 24 V power supply OR-ing in telecom shelf management units. IC Role / Device Role / Timing Role: Low-loss ideal diode replacement with body diode forward conduction and controlled turn-off. Use Value: VDF = 0.83 V (typ.) reduces forward drop vs. Schottky diodes; RDS(on) limits reverse leakage during fault isolation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF540NPBF | Higher RDS(on) (44 mΩ), TO-220 package, higher thermal resistance, no 7 V gate drive guarantee. | Suitable for lower-frequency (<100 kHz), lower-current (<15 A) linear or switching applications with heatsink mounting. | Choose IRF540NPBF only when through-hole assembly and legacy footprint compatibility are required; not recommended for high-density SMT designs. |
| STP16NF10 | Same VDSS (100 V), but higher RDS(on) (90 mΩ), larger DPAK package, slower trr (120 ns), higher Qg (72 nC). | Better suited for low-speed relay replacement or basic power switching where efficiency is secondary to cost. | Select STP16NF10 only for cost-sensitive, non-thermal-critical applications; avoid where fast switching or low conduction loss is needed. |
Compared with IRF540NPBF and STP16NF10, the HAT2140H-EL-E delivers superior power density, lower gate drive demand, and faster switching-enabling smaller magnetics, reduced PCB area, and higher efficiency in space-constrained 25 A power stages.
Availability
HAT2140H-EL-E is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and LED lighting systems requiring stable component supply, RoHS-compliant packaging, and long-term production continuity.
Supply support for HAT2140H-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The HAT2140H-EL-E belongs to Renesas' high-current, logic-level-compatible power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial automation and communications power supplies.
FAQ
What is the maximum gate-source voltage rating for HAT2140H-EL-E?
The HAT2140H-EL-E has a maximum gate-source voltage (VGSS) rating of ±20 V. Exceeding this limit risks permanent gate oxide damage. In practice, gate drive circuits should be clamped to ≤±16 V to ensure long-term reliability, especially under transient conditions. The HAT2140H-EL-E supports robust operation down to 7 V VGS, making it compatible with standard logic-level drivers without level-shifting.
Can HAT2140H-EL-E be used in synchronous rectification applications?
Yes, the HAT2140H-EL-E is suitable for synchronous rectification due to its low RDS(on) (12.5 mΩ typ.), fast body diode recovery (trr = 55 ns), and low forward voltage (VDF = 0.83 V typ.). When used as a synchronous rectifier, the HAT2140H-EL-E reduces conduction losses versus Schottky diodes in 12–48 V output buck converters, provided gate timing avoids shoot-through and accounts for its VGS(off) range (2.0–3.5 V).
What is the thermal resistance (RθJC) of HAT2140H-EL-E?
The HAT2140H-EL-E does not specify RθJC in its official datasheet (Rev. 4.00, Sep 2005); however, its LFPAK package (PTZZ0005DA-A) exhibits significantly lower junction-to-board thermal resistance than comparable DPAK or TO-252 devices. For thermal design, Renesas recommends using Pch = 30 W at Tc = 25°C and applying measured board-level thermal data-typical RθJB is ~2.5°C/W with 1-in² 2 oz. copper pad and thermal vias.
Is HAT2140H-EL-E qualified for automotive applications?
The HAT2140H-EL-E is classified as a "Standard" quality grade device per Renesas' quality grading system, intended for industrial, office, and communications equipment-not for automotive safety-critical or AEC-Q101-qualified applications. While it operates reliably in automotive-adjacent environments (e.g., infotainment power supplies), it lacks AEC-Q101 stress testing, PPAP documentation, and extended temperature validation beyond –55°C to +150°C storage.
What is the avalanche energy rating of HAT2140H-EL-E?
The HAT2140H-EL-E is rated for single-pulse avalanche energy (EAR) of 62.5 mJ at Tch = 25°C with Rg ≥ 50 Ω. This rating applies under defined test conditions (IAP = 25 A, VDD = 100 V) and reflects limited ruggedness for occasional inductive switching events-not sustained avalanche operation. System designers must still implement clamp circuits or snubbers for repetitive inductive loads.
HAT2140H-EL-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- SC-100, SOT-669
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 25A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 7V, 10V
- Rds On (Max) @ Id, Vgs:
- 16mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 105 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6500 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 30W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK
HAT2140H-EL-E FAQ
1.How can I place an order for HAT2140H-EL-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HAT2140H-EL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HAT2140H-EL-E reliable?
The price and inventory of HAT2140H-EL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HAT2140H-EL-E is usually 5 days.
3.What payment methods are accepted for HAT2140H-EL-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HAT2140H-EL-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HAT2140H-EL-E?
HAT2140H-EL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HAT2140H-EL-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HAT2140H-EL-E?
For technical support, including HAT2140H-EL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HAT2140H-EL-E requirements.
6.How does Aetrix verify that HAT2140H-EL-E is sourced from the original manufacturer or authorized distributors?
All HAT2140H-EL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HAT2140H-EL-E meets industry standards.
7.What is the process for return or replacement of HAT2140H-EL-E?
All HAT2140H-EL-E units undergo pre-shipment inspection (PSI). If there is an issue with HAT2140H-EL-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HAT2140H-EL-E part is unused and in its original packaging.
Return procedure for HAT2140H-EL-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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