Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas HAT2141H-EL-E

Part No.:
HAT2141H-EL-E
Manufacturer:
Renesas
Category:
FETs, MOSFETs
Package:
SC-100, SOT-669
Datasheet:
AetrixHAT2141H-EL-E.pdf
Description:
MOSFET N-CH 100V 15A LFPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,155

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

HAT2141H-EL-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-efficiency DC-DC conversion and load switching in industrial power supplies, motor drivers, and automotive body electronics. It delivers 15 A continuous drain current at 100 V VDSS, features 22 mΩ typ. RDS(on) at VGS = 10 V, supports 7 V gate drive, and uses LFPAK (PTZZ0005DA-A) package for high-density mounting.

For engineers reviewing the HAT2141H-EL-E datasheet, HAT2141H-EL-E pinout, HAT2141H-EL-E application, or HAT2141H-EL-E equivalent, key selection criteria include its low RDS(on) at 7 V gate drive, avalanche energy rating of 22.5 mJ, and thermal resistance θch–c = 6.25°C/W - critical for thermally constrained PCB layouts in compact power modules.

Technical Context

This MOSFET employs a trench-gate process optimized for low conduction loss and fast switching. Its 3200 pF Ciss and 10 nC Qgd support efficient operation in 100 kHz–500 kHz synchronous buck converters, while the integrated body diode with trr = 50 ns enables reliable freewheeling in inductive loads.

The device is rated for Tch = 150°C and specified for standard-grade applications including industrial automation and office equipment. Its ±20 V VGSS and 2.0–3.5 V VGS(off) ensure robust gate control under noisy supply conditions without requiring external level-shifting circuitry.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS100 V - supports 48 V nominal bus systems with 2× safety margin against transients
RDS(on) typ.22 mΩ at VGS = 10 V - enables ≤1.7 W conduction loss at 9 A DC load current
ID15 A continuous - suitable for 12–24 V motor drivers up to 300 W output
Qg46 nC - determines gate driver power requirement and switching loss in hard-switched topologies
tr/tf13 ns / 10 ns - allows clean edge control in high-frequency PWM with minimal EMI generation
EAR22.5 mJ - provides single-pulse avalanche ruggedness for inductive turn-off protection
θch–c6.25°C/W - defines thermal path efficiency from channel to case, critical for heatsink sizing

Pinout & Package

Package: LFPAK (RENESAS code PTZZ0005DA-A), surface-mount, 5-terminal leadframe package with exposed drain pad for enhanced thermal performance and mechanical robustness.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3SourceCommon source connection; pins 1–3 are internally bonded and electrically identical
4GateControl input; requires ≤±20 V drive; low Qgs = 11 nC minimizes gate driver stress
5DrainMain power output terminal; connected to exposed copper pad for low-inductance, high-current routing

Key Features

Feature Design Value
7 V gate drive capabilityEnables direct interface with 5 V/7 V logic-level controllers without gate boosters
Low RDS(on) at VGS = 7 V23.5 mΩ max - maintains <2 W conduction loss even with marginal gate voltage margins
High-density LFPAK footprint4.0 × 4.9 mm outline - reduces PCB area by ~40% vs. SO-8 while improving thermal dissipation
Fast body diode recoverytrr = 50 ns - minimizes reverse recovery losses in synchronous rectification and half-bridge configurations
Avalanche-rated operationRated for repetitive IAP = 15 A pulses - eliminates need for external snubbers in inductive switching

Applications

Industrial DC-DC Converters Automotive Body Control Modules

Use Scenario: 48 V input to 12 V/15 A output synchronous buck converter in factory automation PLC power rails.

IC Role / Device Role / Timing Role: High-side power switch operating at 250 kHz with forced PWM mode.

Use Value: 22 mΩ RDS(on) limits conduction loss to 2.0 W at full load, enabling natural convection cooling on 2-layer board.

Use Scenario: Load switch for rear-window defroster circuit in 12 V vehicle electrical architecture.

IC Role / Device Role / Timing Role: Low-side controlled switch activated via microcontroller GPIO with PWM dimming.

Use Value: 7 V gate drive compatibility allows direct MCU interface; 22.5 mJ avalanche rating absorbs inductive kickback from heater coil.

Motor Drive Half-Bridge Legs Hot-Swap Power Distribution

Use Scenario: Upper FET in 24 V BLDC motor gate driver stage for HVAC blower fan.

IC Role / Device Role / Timing Role: High-side switch driven by bootstrap gate driver; operates with 100 ns dead-time.

Use Value: 13 ns rise time and 10 nC Qgd ensure minimal shoot-through risk and <1.5 µs total switching transition.

Use Scenario: Inrush-limited 24 V power rail switch for modular test equipment backplane.

IC Role / Device Role / Timing Role: Controlled turn-on using gate resistor + RC network to limit dV/dt during hot-plug events.

Use Value: Low VGS(off) threshold (2.0–3.5 V) ensures predictable turn-on behavior across temperature and process variation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
IPB120N10N3 GRDS(on) = 12.5 mΩ @ 10 V; TO-263 package; higher capacitance (Ciss = 4700 pF)Better conduction loss but larger footprint and slower switching; requires heatsink in same thermal envelopeChoose when lower RDS(on) outweighs layout density and EMI constraints
DMTH10H025LPSRDS(on) = 2.5 mΩ @ 10 V; PowerSO-10 package; 3.3 V logic-compatible gateLower voltage rating (100 V same), but significantly higher cost and limited avalanche rating (no published EAR)Prefer when ultra-low RDS(on) is mandatory and gate drive is 3.3 V only

Compared with IPB120N10N3 G and DMTH10H025LPS, the HAT2141H-EL-E offers optimal balance of low RDS(on), fast switching, compact LFPAK packaging, and verified avalanche ruggedness - making it especially suited for space-constrained, thermally demanding industrial and automotive power stages where reliability under transient overload is essential.

Availability

HAT2141H-EL-E is available at Aetrix Electronics and suitable for industrial motor drives, automotive body electronics, and DC-DC power conversion requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant taping format.

Supply support for HAT2141H-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The HAT2141H-EL-E belongs to Renesas' high-current, low-RDS(on) power MOSFET product line, engineered specifically for efficient, rugged, and space-optimized switching in 12–48 V power systems.

FAQ

What is the maximum continuous drain current rating for HAT2141H-EL-E?

The HAT2141H-EL-E is rated for 15 A continuous drain current (ID) at Tc = 25°C. This rating assumes proper PCB copper area for thermal conduction and derates linearly above 25°C case temperature per the Pch vs. Tc curve on page 3 of the datasheet. At Tc = 75°C, the usable ID drops to approximately 10 A.

Does HAT2141H-EL-E support logic-level gate drive?

Yes, the HAT2141H-EL-E supports 7 V gate drive and exhibits RDS(on) = 23.5 mΩ max at VGS = 7 V, enabling direct interface with 5 V or 7 V microcontroller outputs or gate drivers without level-shifting. Its VGS(off) range of 2.0–3.5 V ensures reliable turn-on with standard logic thresholds.

What is the thermal resistance from channel to case for HAT2141H-EL-E?

The HAT2141H-EL-E has a channel-to-case thermal resistance (θch–c) of 6.25°C/W, measured under Tc = 25°C conditions. This value is critical for calculating junction temperature rise and must be used with actual case temperature measurements - not ambient - when designing thermal management for the HAT2141H-EL-E.

Is HAT2141H-EL-E suitable for avalanche operation?

Yes, the HAT2141H-EL-E is fully rated for repetitive avalanche operation with IAP = 15 A and EAR = 22.5 mJ at Tch = 25°C (Rg ≥ 50 Ω). This makes the HAT2141H-EL-E appropriate for inductive load switching where voltage spikes exceed VDSS, eliminating the need for external clamping components in many designs.

What package type does HAT2141H-EL-E use, and what are its key mechanical advantages?

The HAT2141H-EL-E uses the LFPAK package (RENESAS code PTZZ0005DA-A), also known as SC-100. Its key mechanical advantages include an exposed drain pad for low thermal resistance, 4.0 × 4.9 mm footprint for high-density placement, and gull-wing leads compatible with standard reflow processes - all contributing to superior power density versus SO-8 or DPAK alternatives.

HAT2141H-EL-E Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
SC-100, SOT-669
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
15A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
7V, 10V
Rds On (Max) @ Id, Vgs:
27.5mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
46 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3200 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
20W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK

HAT2141H-EL-E FAQ

1.How can I place an order for HAT2141H-EL-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HAT2141H-EL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HAT2141H-EL-E reliable?

The price and inventory of HAT2141H-EL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HAT2141H-EL-E is usually 5 days.

3.What payment methods are accepted for HAT2141H-EL-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HAT2141H-EL-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HAT2141H-EL-E?

HAT2141H-EL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HAT2141H-EL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HAT2141H-EL-E?

For technical support, including HAT2141H-EL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HAT2141H-EL-E requirements.

6.How does Aetrix verify that HAT2141H-EL-E is sourced from the original manufacturer or authorized distributors?

All HAT2141H-EL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HAT2141H-EL-E meets industry standards.

7.What is the process for return or replacement of HAT2141H-EL-E?

All HAT2141H-EL-E units undergo pre-shipment inspection (PSI). If there is an issue with HAT2141H-EL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HAT2141H-EL-E part is unused and in its original packaging.

Return procedure for HAT2141H-EL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

HAT2141H-EL-E Tags

  • HAT2141H-EL-E
  • HAT2141H-EL-E PDF
  • HAT2141H-EL-E Datasheet
  • HAT2141H-EL-E Specifications
  • HAT2141H-EL-E Images
  • Renesas
  • Renesas HAT2141H-EL-E
  • Buy HAT2141H-EL-E
  • HAT2141H-EL-E Price
  • HAT2141H-EL-E Distributor
  • HAT2141H-EL-E Supplier
  • HAT2141H-EL-E Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER