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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas HAT2143H-EL-E

Name: HAT2143H-EL-E
Brand: Renesas
SKU: HAT2143H-EL-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: HAT2143H-EL-E

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: HAT2143H-EL-E.pdf

Description:: MOSFET N-CH 30V 40A LFPAK

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Product details

Overview

HAT2143H-EL-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-efficiency DC-DC conversion and load switching in industrial power supplies. It delivers 40 A continuous drain current, 30 V V_DSS, and ultra-low R_DS(on) of 4.9 mΩ (typ.) at V_GS = 10 V, enabling compact, low-loss power stages in 12 V input systems.

For engineers reviewing the HAT2143H-EL-E datasheet, HAT2143H-EL-E pinout, HAT2143H-EL-E application, or HAT2143H-EL-E equivalent, key selection criteria include gate drive compatibility down to 4.5 V, avalanche energy rating (25 mJ), body diode recovery time (60 ns), thermal resistance (R_thJC ≈ 1.25 °C/W implied by P_ch = 20 W at T_c = 25°C), and LFPAK package mounting density.

Technical Context

The HAT2143H-EL-E employs a trench-gate vertical DMOS structure optimized for low conduction loss and fast switching. Its 4.5 V gate threshold enables direct drive from 5 V logic or microcontroller GPIOs without level-shifting.

With Q_g = 40 nC, Q_gd = 7 nC, and t_r/t_f of 56/15 ns under standard test conditions, it supports high-frequency synchronous buck operation up to ~1 MHz while maintaining low switching loss and EMI control via controlled dV/dt.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Supports 12 V nominal bus systems with margin for transients and ripple.
R_DS(on) @ V_GS = 10 V	4.9 mΩ typ. - Enables ≤ 20 mW conduction loss at 20 A, reducing heatsink requirements.
R_DS(on) @ V_GS = 4.5 V	7.9 mΩ typ. - Ensures robust on-state performance with standard 5 V logic-level drive.
I_D (continuous)	40 A - Rated for sustained current in PCB-mounted power switches with adequate copper area.
E_AR	25 mJ - Withstands single-pulse inductive energy during load dump or hot-swap events.
t_rr	60 ns - Minimizes reverse recovery loss and cross-conduction risk in synchronous rectification.
C_iss	2450 pF - Determines gate drive strength requirement; compatible with standard 1–2 A drivers.

Pinout & Package

Package: LFPAK (RENESAS code PTZZ0005DA-A), surface-mount, 5-terminal leadframe package with exposed drain pad for enhanced thermal performance and high-density layout.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source connection; electrically tied internally; used for return path and thermal conduction to PCB ground plane.
4	Gate	Control terminal; requires <10 V drive for full enhancement; low Q_gs/Q_gd enables fast, low-loss switching.
5	Drain	Main power output node; connected to exposed metal pad on bottom side for low R_thJC and high-current routing.

Key Features

Feature	Design Value
4.5 V gate drive capability	Enables direct interface with 5 V microcontrollers and logic ICs without external level shifters.
Low R_DS(on) at 4.5 V	7.9 mΩ typ. ensures minimal conduction loss even under partial gate drive, improving light-load efficiency.
Fast body diode recovery	60 ns t_rr reduces shoot-through risk and improves efficiency in synchronous buck and OR-ing applications.
High avalanche energy rating	25 mJ allows reliable operation under inductive switching stress without external snubbers in many designs.
LFPAK package thermal performance	Exposed drain pad and short internal bond wires yield low junction-to-case resistance (~1.25 °C/W).

Applications

DC-DC Synchronous Buck Converter	Hot-Swap / Load Switch
Use Scenario: Primary high-side switch in 12 V input → 3.3/5 V output point-of-load converters for industrial PLCs and embedded controllers. IC Role / Device Role / Timing Role: High-side power MOSFET controlling energy transfer into output inductor; switched at 300–1000 kHz. Use Value: Low R_DS(on) and fast switching minimize total power loss (<1.5 W at 20 A), enabling fanless operation.	Use Scenario: Inrush-limited power rail enable for FPGA or DSP subsystems requiring controlled turn-on and fault protection. IC Role / Device Role / Timing Role: Single N-channel load switch with integrated gate driver support; configured as high-side switch with external charge pump or bootstrap. Use Value: 4.5 V gate compatibility and 160 A peak pulse rating allow robust response to surge currents during hot-plug events.
Motor Drive Half-Bridge	OR-ing Diode Replacement
Use Scenario: Low-side switch in brushed DC motor H-bridge for HVAC actuators and industrial valves. IC Role / Device Role / Timing Role: Ground-referenced switching element; commutated at PWM frequencies up to 20 kHz. Use Value: Low Q_g (40 nC) and fast t_f (15 ns) reduce switching losses and improve torque linearity at high PWM duty cycles.	Use Scenario: Active OR-ing in redundant 12 V power supplies for telecom shelf management and server backplanes. IC Role / Device Role / Timing Role: Reverse-polarity protected, low-V_F replacement for Schottky diodes; driven by dedicated OR-ing controller. Use Value: Body diode V_DF = 0.85 V (typ.) and t_rr = 60 ns enable >95% efficiency gain over 0.4 V Schottky at 40 A, reducing heat generation.

DC-DC Synchronous Buck Converter

Hot-Swap / Load Switch

Use Scenario: Primary high-side switch in 12 V input → 3.3/5 V output point-of-load converters for industrial PLCs and embedded controllers.

IC Role / Device Role / Timing Role: High-side power MOSFET controlling energy transfer into output inductor; switched at 300–1000 kHz.

Use Value: Low R_DS(on) and fast switching minimize total power loss (<1.5 W at 20 A), enabling fanless operation.

Use Scenario: Inrush-limited power rail enable for FPGA or DSP subsystems requiring controlled turn-on and fault protection.

IC Role / Device Role / Timing Role: Single N-channel load switch with integrated gate driver support; configured as high-side switch with external charge pump or bootstrap.

Use Value: 4.5 V gate compatibility and 160 A peak pulse rating allow robust response to surge currents during hot-plug events.

Motor Drive Half-Bridge

OR-ing Diode Replacement

Use Scenario: Low-side switch in brushed DC motor H-bridge for HVAC actuators and industrial valves.

IC Role / Device Role / Timing Role: Ground-referenced switching element; commutated at PWM frequencies up to 20 kHz.

Use Value: Low Q_g (40 nC) and fast t_f (15 ns) reduce switching losses and improve torque linearity at high PWM duty cycles.

Use Scenario: Active OR-ing in redundant 12 V power supplies for telecom shelf management and server backplanes.

IC Role / Device Role / Timing Role: Reverse-polarity protected, low-V_F replacement for Schottky diodes; driven by dedicated OR-ing controller.

Use Value: Body diode V_DF = 0.85 V (typ.) and t_rr = 60 ns enable >95% efficiency gain over 0.4 V Schottky at 40 A, reducing heat generation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6242PBF	R_DS(on) = 5.2 mΩ @ 10 V; Q_g = 32 nC; same LFPAK56 package; lower C_iss (1900 pF).	Slightly faster switching but lower avalanche rating (15 mJ vs. 25 mJ); no specified t_rr in datasheet.	Preferred where gate drive strength is limited and avalanche stress is minimal.
DMTH3007LPSQ-13	R_DS(on) = 5.0 mΩ @ 10 V; Q_g = 43 nC; PowerSO-8 package; higher R_thJC (~2.0 °C/W).	Same voltage/current rating but larger footprint and reduced thermal performance; automotive-qualified (AEC-Q101).	Chosen when automotive qualification or alternate package compatibility is required.

Compared with IRLHS6242PBF and DMTH3007LPSQ-13, the HAT2143H-EL-E offers superior avalanche ruggedness and thermal efficiency in LFPAK form factor, making it optimal for industrial power stages subject to transient overload and constrained cooling.

Availability

HAT2143H-EL-E is available at Aetrix Electronics and suitable for industrial power supplies, motor control modules, and redundant DC-DC systems requiring stable component supply, long-term manufacturability, and RoHS-compliant packaging.

Supply support for HAT2143H-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The HAT2143H-EL-E belongs to Renesas' legacy power MOSFET portfolio, engineered specifically for high-current, medium-voltage industrial switching applications demanding low R_DS(on), logic-level drive, and robust unclamped inductive switching capability.

FAQ

What is the maximum continuous drain current rating for the HAT2143H-EL-E?

The HAT2143H-EL-E is rated for 40 A continuous drain current (I_D) at T_c = 25°C. This rating assumes proper PCB copper area and thermal management per the LFPAK package recommendations. Derating applies above 25°C case temperature, with I_D decreasing linearly to zero at T_c = 150°C.

Does the HAT2143H-EL-E support 5 V gate drive in practical applications?

Yes - the HAT2143H-EL-E is explicitly characterized for 4.5 V gate drive, with R_DS(on) = 7.9 mΩ (typ.) at V_GS = 4.5 V and I_D = 20 A. This makes it fully compatible with standard 5 V logic outputs and microcontroller GPIOs without external level shifting.

What is the avalanche energy rating of the HAT2143H-EL-E and how is it tested?

The HAT2143H-EL-E has an unclamped inductive avalanche energy rating (E_AR) of 25 mJ, measured at T_ch = 25°C with R_g ≥ 50 Ω. This rating reflects single-pulse robustness under inductive switching stress, such as in relay driving or flyback snubberless designs.

Is the HAT2143H-EL-E suitable for synchronous rectification?

Yes - the HAT2143H-EL-E features a fast body diode with t_rr = 60 ns and V_DF = 0.85 V (typ.) at I_F = 40 A, making it well-suited for synchronous rectification in DC-DC converters where low forward drop and rapid recovery reduce conduction and switching losses.

What package type does the HAT2143H-EL-E use and what are its thermal advantages?

The HAT2143H-EL-E uses the LFPAK package (RENESAS code PTZZ0005DA-A), a 5-terminal surface-mount variant of SC-100 with an exposed drain pad. This construction provides low junction-to-case thermal resistance (~1.25 °C/W), enabling efficient heat transfer directly to the PCB ground plane without requiring a separate heatsink.

HAT2143H-EL-E Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.1mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2450 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 20W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK

HAT2143H-EL-E FAQ

1.How can I place an order for HAT2143H-EL-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HAT2143H-EL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HAT2143H-EL-E reliable?

The price and inventory of HAT2143H-EL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HAT2143H-EL-E is usually 5 days.

3.What payment methods are accepted for HAT2143H-EL-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HAT2143H-EL-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HAT2143H-EL-E?

HAT2143H-EL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HAT2143H-EL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HAT2143H-EL-E?

For technical support, including HAT2143H-EL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HAT2143H-EL-E requirements.

6.How does Aetrix verify that HAT2143H-EL-E is sourced from the original manufacturer or authorized distributors?

All HAT2143H-EL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HAT2143H-EL-E meets industry standards.

7.What is the process for return or replacement of HAT2143H-EL-E?

All HAT2143H-EL-E units undergo pre-shipment inspection (PSI). If there is an issue with HAT2143H-EL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HAT2143H-EL-E part is unused and in its original packaging.

Return procedure for HAT2143H-EL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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