Renesas HAT2160H-EL-E

Overview

HAT2160H-EL-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-current, low-voltage DC power switching applications, featuring R_DS(on) = 2.1 mΩ (typ. at V_GS = 10 V), 60 A continuous drain current, and 4.5 V gate drive capability - used in synchronous rectification, motor drivers, and DC-DC converter high-side/low-side switches.

For engineers reviewing the HAT2160H-EL-E datasheet, HAT2160H-EL-E pinout, HAT2160H-EL-E application, or HAT2160H-EL-E equivalent, key selection criteria include on-resistance vs. gate voltage, avalanche energy rating (90 mJ), thermal resistance (θ_ch-c = 4.17°C/W), body-diode reverse recovery time (40 ns), and LFPAK package suitability for high-density PCB layouts.

Technical Context

This MOSFET employs a trench-gate process optimized for low R_DS(on) and fast switching, with gate charge Q_g = 54 nC and Q_gd = 14 nC enabling efficient operation at 100 kHz–1 MHz switching frequencies. Its body diode exhibits V_DF = 0.82 V (typ. at I_F = 60 A) and t_rr = 40 ns under dI_F/dt = 100 A/µs.

The device operates within a channel temperature range of –55°C to +150°C and supports repetitive avalanche capability up to I_AP = 30 A and E_AR = 90 mJ (T_ch = 25°C, R_g ≥ 50 Ω), making it suitable for inductive load switching with transient overvoltage tolerance.

Key Specifications

Pinout & Package

Package: LFPAK (RENESAS code PTZZ0005DA-A), surface-mount, 5-pin, copper-clip construction with exposed drain pad for enhanced thermal and electrical performance. Dimensions: 4.9 × 3.95 × 1.3 mm (L × W × H), mass = 0.080 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRLHS6242PBF and DMTH6016LPSQ, the HAT2160H-EL-E delivers optimal balance of 60 A current capacity, 4.5 V logic compatibility, and LFPAK thermal performance - making it especially valuable in high-power density 12 V systems where both conduction loss and switching loss must be minimized simultaneously.

Availability

HAT2160H-EL-E is available at Aetrix Electronics and suitable for DC-DC converters, automotive body electronics, server VRMs, and industrial PLC output modules requiring stable component supply, full traceability, and long-term production continuity.

Supply support for HAT2160H-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and connectivity solutions for automotive, industrial, and enterprise applications.

The HAT2160H-EL-E belongs to Renesas' high-current logic-level power MOSFET family, engineered specifically for high-efficiency, high-density DC power switching in 12 V and 24 V systems where thermal performance and gate drive simplicity are critical.

FAQ

What is the maximum continuous drain current rating for HAT2160H-EL-E?

The HAT2160H-EL-E has a continuous drain current (I_D) rating of 60 A at case temperature T_c = 25°C. This rating assumes proper PCB copper area and thermal management; derating applies above 25°C per the power vs. temperature curve in the datasheet. At T_c = 100°C, the usable I_D drops to approximately 35 A. The HAT2160H-EL-E must be mounted on a minimum 100 mm² 2-oz copper pad to sustain rated current.

Does HAT2160H-EL-E support 3.3 V logic-level gate drive?

No - the HAT2160H-EL-E is specified for full enhancement at V_GS = 4.5 V (R_DS(on) = 2.8 mΩ typ.), not 3.3 V. At 3.3 V, R_DS(on) rises significantly beyond datasheet limits and is not guaranteed. For 3.3 V systems, consider alternatives like the RQ1C090BNTCL or SiR626DP. The HAT2160H-EL-E requires a minimum 4.5 V gate drive to achieve its published low on-resistance and thermal performance.

What is the avalanche energy rating of HAT2160H-EL-E and how is it tested?

The HAT2160H-EL-E has a repetitive avalanche energy rating (E_AR) of 90 mJ at T_ch = 25°C, measured with I_AP = 30 A, V_DD = 10 V, duty cycle < 0.1%, and R_g ≥ 50 Ω. This rating validates safe operation during inductive switching transients - such as motor commutation or relay de-energization - without external clamping. The HAT2160H-EL-E's avalanche capability is integral to its design and does not require additional circuitry for typical 12 V automotive or industrial loads.

Is HAT2160H-EL-E RoHS compliant and lead-free?

Yes - the HAT2160H-EL-E is RoHS compliant and features lead-free, Ni/Pd/Au-plated terminals per JEDEC J-STD-609. The "-E" suffix in the part number explicitly denotes lead-free taping packaging. All materials and plating meet EU RoHS Directive 2011/65/EU requirements, including restriction of Pb, Cd, Hg, Cr(VI), PBB, and PBDE. The HAT2160H-EL-E is suitable for use in consumer, industrial, and automotive electronics where environmental compliance is mandatory.

What is the thermal resistance from channel to case (θ_ch-c) for HAT2160H-EL-E?

The channel-to-case thermal resistance (θ_ch-c) of the HAT2160H-EL-E is 4.17°C/W, measured under steady-state conditions with T_c = 25°C. This value reflects the device's LFPAK package efficiency - significantly lower than SO-8 or DPAK equivalents - and enables 30 W power dissipation with only a 125°C temperature rise from case to channel. Proper soldering to a 2-oz copper thermal pad is required to achieve this θ_ch-c; the HAT2160H-EL-E's exposed drain pad must be fully connected to the PCB ground plane.