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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas HAT2164H-EL-E

Name: HAT2164H-EL-E
Brand: Renesas
SKU: HAT2164H-EL-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: HAT2164H-EL-E

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: HAT2164H-EL-E.pdf

Description:: MOSFET N-CH 30V 60A LFPAK

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Product details

Overview

HAT2164H-EL-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-current, low-voltage power switching applications, featuring R_DS(on) = 2.5 mΩ (typ. at V_GS = 10 V), 60 A continuous drain current, and 4.5 V gate drive capability - used in DC-DC converter primary-side switches and motor driver H-bridge legs.

For engineers reviewing the HAT2164H-EL-E datasheet, HAT2164H-EL-E pinout, HAT2164H-EL-E application, or HAT2164H-EL-E equivalent, key selection criteria include its LFPAK (PTZZ0005DA-A) package thermal performance, body-diode reverse recovery time of 40 ns, and avalanche energy rating of 90 mJ - critical for synchronous rectification and inductive load switching reliability.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low on-resistance and fast switching. Its 30 V V_DSS, ±20 V V_GSS, and 4.5 V logic-level gate threshold enable direct interfacing with 5 V microcontrollers and gate drivers without level-shifting.

The device integrates a robust body diode with V_DF = 0.82 V (typ. at I_F = 60 A) and t_rr = 40 ns under dI_F/dt = 100 A/µs, supporting efficient freewheeling in buck converters and half-bridge topologies where reverse recovery loss must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage for 12 V and 24 V system rail switching
R_DS(on) @ V_GS = 10 V	2.5 mΩ typ. - Enables ≤ 4.5 W conduction loss at 30 A, reducing heatsink requirements
I_D (continuous)	60 A - Supports high-power motor drives and server VRMs without parallel devices
Q_g	50 nC - Low gate charge allows fast turn-on with moderate gate driver strength (e.g., TC4427)
t_r/t_f	60 ns / 15 ns - Fast edge rates minimize switching loss in 100–500 kHz SMPS designs
θ_ch-C	4.17 °C/W - Enables 30 W channel dissipation with ≤ 125°C case temperature rise
E_AR	90 mJ - Withstands single-pulse inductive energy spikes up to L·I²/2 = 90 mJ without failure

Pinout & Package

Package: LFPAK (RENESAS code PTZZ0005DA-A), surface-mount, 5-terminal leadframe package with exposed drain pad for thermal and electrical performance. Dimensions: 4.9 mm × 3.95 mm × 1.3 mm max, mass 0.080 g.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source connection for all three internal paralleled dies; low-inductance path to ground plane
4	Gate	Control terminal requiring <22 nC gate-to-source charge (Q_gs) for full enhancement
5	Drain	High-current output node tied to exposed copper pad; electrically and thermally connected to PCB copper area

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.5 V - eliminates need for gate boosters in 5 V control systems
Low R_DS(on)	2.5 mΩ typ. at 10 V enables >96% efficiency in 12 V/30 A buck stages at 200 kHz
Fast switching	18 ns t_d(on), 65 ns t_d(off) - reduces total switching loss to <1.2 W at 30 A/10 V/250 kHz
Robust body diode	40 ns t_rr and 0.82 V V_DF - minimizes shoot-through risk and conduction loss in synchronous rectifiers
Avalanche rated	30 A I_AP, 90 mJ E_AR - withstands unclamped inductive switching events in motor gate drivers

Applications

DC-DC Converter Primary Switch	Motor Driver High-Side Switch
Use Scenario: 12 V input, 1.2 V/60 A output buck converter in telecom power supply. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer into output inductor; operates at 300 kHz with 15 ns fall time. Use Value: 2.5 mΩ R_DS(on) limits conduction loss to 4.5 W, enabling compact thermal design without forced air.	Use Scenario: 24 V brushed DC motor driver with PWM-controlled forward/reverse operation. IC Role / Device Role / Timing Role: High-side switch in H-bridge leg; handles 60 A peak current with 40 ns body-diode recovery. Use Value: Low Q_g (50 nC) and fast t_f (15 ns) reduce switching loss during direction reversal transients.
Server VRM High-Current Phase	Automotive Body Control Module Load Switch
Use Scenario: Multiphase CPU voltage regulator delivering 100+ A at ≤1.0 V in datacenter servers. IC Role / Device Role / Timing Role: Synchronous rectifier in phase-leg configuration; conducts during low-side switch on-time. Use Value: 0.82 V body-diode forward voltage and 40 ns t_rr suppress reverse-recovery ringing and cross-conduction losses.	Use Scenario: 12 V load switch for automotive HVAC blower motor with overcurrent protection. IC Role / Device Role / Timing Role: High-side power switch controlled by MCU GPIO; supports 60 A inrush current. Use Value: 4.5 V gate drive compatibility allows direct connection to automotive 5 V MCU outputs without external level shifters.

DC-DC Converter Primary Switch

Motor Driver High-Side Switch

Use Scenario: 12 V input, 1.2 V/60 A output buck converter in telecom power supply.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer into output inductor; operates at 300 kHz with 15 ns fall time.

Use Value: 2.5 mΩ R_DS(on) limits conduction loss to 4.5 W, enabling compact thermal design without forced air.

Use Scenario: 24 V brushed DC motor driver with PWM-controlled forward/reverse operation.

IC Role / Device Role / Timing Role: High-side switch in H-bridge leg; handles 60 A peak current with 40 ns body-diode recovery.

Use Value: Low Q_g (50 nC) and fast t_f (15 ns) reduce switching loss during direction reversal transients.

Server VRM High-Current Phase

Automotive Body Control Module Load Switch

Use Scenario: Multiphase CPU voltage regulator delivering 100+ A at ≤1.0 V in datacenter servers.

IC Role / Device Role / Timing Role: Synchronous rectifier in phase-leg configuration; conducts during low-side switch on-time.

Use Value: 0.82 V body-diode forward voltage and 40 ns t_rr suppress reverse-recovery ringing and cross-conduction losses.

Use Scenario: 12 V load switch for automotive HVAC blower motor with overcurrent protection.

IC Role / Device Role / Timing Role: High-side power switch controlled by MCU GPIO; supports 60 A inrush current.

Use Value: 4.5 V gate drive compatibility allows direct connection to automotive 5 V MCU outputs without external level shifters.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	R_DS(on) = 3.0 mΩ (V_GS = 10 V); TO-220AB package; θ_JA = 62 °C/W vs. HAT2164H-EL-E's 4.17 °C/W (ch-C)	Larger footprint, higher thermal resistance - requires larger heatsink for same 60 A operation	Choose when legacy TO-220 layout exists and board space permits added thermal solution
DMTH3004LPS-13	R_DS(on) = 2.3 mΩ (V_GS = 10 V); PowerSO-8 package; Q_g = 42 nC; t_r/t_f = 12/8 ns	Faster switching but lower avalanche rating (E_AR = 45 mJ vs. 90 mJ)	Prefer for ultra-high-frequency SMPS (>1 MHz) where avalanche robustness is secondary to speed

Compared with IRL3803PbF and DMTH3004LPS-13, the HAT2164H-EL-E delivers superior thermal performance via its LFPAK package, higher avalanche energy margin for inductive loads, and balanced gate charge for mid-frequency (200–500 kHz) power conversion - making it optimal for space-constrained, high-reliability industrial and telecom power stages.

Availability

HAT2164H-EL-E is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, server VRMs, and automotive body control modules requiring stable component supply and long-term production continuity.

Supply support for HAT2164H-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The HAT2164H-EL-E belongs to Renesas' high-current logic-level power MOSFET product line, engineered for high-efficiency, high-density power switching in 12–24 V systems where thermal management and gate-drive simplicity are critical.

FAQ

What is the maximum continuous drain current rating for HAT2164H-EL-E at T_c = 25°C?

The HAT2164H-EL-E is rated for 60 A continuous drain current (I_D) at case temperature T_c = 25°C, as specified in its Absolute Maximum Ratings table. This rating assumes proper PCB copper area for thermal conduction from the exposed drain pad. Derating applies above 25°C per the Power vs. Temperature Derating curve - e.g., ~45 A at T_c = 75°C.

Does HAT2164H-EL-E support 3.3 V gate drive?

No, the HAT2164H-EL-E does not guarantee full enhancement at 3.3 V gate drive. Its gate threshold voltage V_GS(off) ranges from 0.8 V to 2.3 V, and R_DS(on) is specified only at V_GS = 4.5 V (3.0 mΩ typ.) and V_GS = 10 V (2.5 mΩ typ.). At 3.3 V, R_DS(on) increases significantly - use 4.5 V or higher for reliable low-loss operation.

What is the thermal resistance from channel to case (θ_ch-C) for HAT2164H-EL-E?

The HAT2164H-EL-E has a channel-to-case thermal resistance θ_ch-C of 4.17 °C/W, measured under T_c = 25°C conditions. This value reflects conduction through the LFPAK package's exposed drain pad into the PCB copper, enabling efficient heat extraction without external heatsinks in many medium-power applications.

Can HAT2164H-EL-E be used in avalanche mode repeatedly?

The HAT2164H-EL-E is rated for repetitive avalanche energy up to 90 mJ per pulse at T_ch = 25°C with R_g ≥ 50 Ω, but the datasheet specifies this for single-pulse conditions (duty cycle ≤ 0.1%). For repetitive avalanche, derating is required - consult Renesas Application Note AN-8012 for safe operating area boundaries and thermal cycling limits before implementing in unprotected inductive switching circuits.

What is the body-diode forward voltage of HAT2164H-EL-E at 60 A?

The body-diode forward voltage V_DF of the HAT2164H-EL-E is 0.82 V (typical) and 1.07 V (maximum) at I_F = 60 A and V_GS = 0 V, as measured per the Electrical Characteristics table. This low V_DF contributes to reduced freewheeling loss in synchronous rectifier and half-bridge configurations where the intrinsic diode conducts during dead time.

HAT2164H-EL-E Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.1mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7600 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK

HAT2164H-EL-E FAQ

1.How can I place an order for HAT2164H-EL-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HAT2164H-EL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HAT2164H-EL-E reliable?

The price and inventory of HAT2164H-EL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HAT2164H-EL-E is usually 5 days.

3.What payment methods are accepted for HAT2164H-EL-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HAT2164H-EL-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HAT2164H-EL-E?

HAT2164H-EL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HAT2164H-EL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HAT2164H-EL-E?

For technical support, including HAT2164H-EL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HAT2164H-EL-E requirements.

6.How does Aetrix verify that HAT2164H-EL-E is sourced from the original manufacturer or authorized distributors?

All HAT2164H-EL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HAT2164H-EL-E meets industry standards.

7.What is the process for return or replacement of HAT2164H-EL-E?

All HAT2164H-EL-E units undergo pre-shipment inspection (PSI). If there is an issue with HAT2164H-EL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HAT2164H-EL-E part is unused and in its original packaging.

Return procedure for HAT2164H-EL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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