Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas HAT2165H-EL-E

Name: HAT2165H-EL-E
Brand: Renesas
SKU: HAT2165H-EL-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: HAT2165H-EL-E

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: HAT2165H-EL-E.pdf

Description:: MOSFET N-CH 30V 55A LFPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,209

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

HAT2165H-EL-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-efficiency, high-current DC power switching in automotive and industrial applications. It delivers R_DS(on) = 2.5 mΩ (typ.) at V_GS = 10 V, supports 55 A continuous drain current, and operates with 7 V gate drive compatibility - enabling direct interface with low-voltage microcontrollers. Its LFPAK (PTZZ0005DA-A) package ensures high-density mounting and thermal performance up to 150°C channel temperature.

For engineers reviewing the HAT2165H-EL-E datasheet, HAT2165H-EL-E pinout, HAT2165H-EL-E application, or HAT2165H-EL-E equivalent, key selection considerations include its 30 V V_DSS, 4.17°C/W channel-to-case thermal resistance, avalanche energy rating of 90 mJ, body-diode reverse recovery time of 40 ns, and gate charge profile optimized for fast switching in motor control and DC-DC converter topologies.

Technical Context

The HAT2165H-EL-E employs a trench-gate silicon process optimized for low conduction loss and fast switching dynamics. Its R_DS(on) remains stable across V_GS = 4.5 V to 10 V, supporting both logic-level and standard gate drive. The device integrates a robust body diode with V_DF = 0.81 V (typ.) at 55 A and trr = 40 ns under diF/dt = 100 A/µs.

It is rated for repetitive avalanche operation (I_AP = 30 A, E_AR = 90 mJ), with thermal derating defined by θ_ch-C = 4.17°C/W and maximum T_ch = 150°C. The LFPAK package provides low-inductance source connections and enhanced thermal coupling to PCB copper, critical for high-current pulse handling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage in high-side or low-side switch configurations without breakdown.
R_DS(on) (V_GS = 10 V)	2.5 mΩ typ. - Enables <165 mW conduction loss at 55 A, reducing heatsink requirements in 12 V systems.
I_D (continuous)	55 A - Supports high-current loads such as BLDC motor phases or battery protection FETs without external parallel devices.
Q_g	33 nC - Optimized gate charge enables efficient 100 kHz+ switching in synchronous buck converters with moderate gate driver strength.
t_r/t_f	65 ns / 9.5 ns - Fast edge rates minimize switching transition losses and EMI generation in hard-switched topologies.
θ_ch-C	4.17°C/W - Direct thermal path from channel to case allows effective heat transfer to PCB thermal pads or heatsinks.
E_AR	90 mJ - Rated avalanche energy supports inductive load interruption (e.g., solenoid de-energization) without failure.

Pinout & Package

Package: LFPAK (RENESAS code PTZZ0005DA-A), surface-mount, 5-terminal leadframe package with exposed drain pad for thermal and electrical performance. Dimensions: 4.9 × 3.95 × 1.3 mm (L × W × H), mass 0.080 g.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source connection; low-inductance parallel terminals reduce source loop inductance in high-di/dt switching.
4	Gate	Control terminal; accepts 4.5–20 V drive; low input capacitance (C_iss = 5180 pF) eases driver selection.
5	Drain	Main power output terminal; electrically and thermally connected to exposed copper pad on bottom of package.

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V gate drive	R_DS(on) = 3.4 mΩ (typ.) enables use with 5 V or 3.3 V MCUs without level-shifting.
High-current capability	55 A continuous ID rating supports single-FET solutions in 12 V/24 V power distribution modules.
Fast switching with low Q_gd/Q_gs ratio	Q_gd = 7.1 nC and Q_gs = 15 nC ensure clean Miller plateau transition and reduced shoot-through risk.
Robust body diode	V_DF = 0.81 V (typ.) and trr = 40 ns support freewheeling in synchronous rectification and H-bridge regeneration.
Avalanche-rated operation	Rated for 30 A repetitive avalanche current and 90 mJ energy - validated for inductive load switching without snubbers.

Applications

Automotive Body Control Module (BCM)	Industrial DC Motor Drive
Use Scenario: High-side power switching for headlight, fog lamp, or HVAC blower control in 12 V vehicle electrical systems. IC Role / Device Role / Timing Role: Primary power switch managing load current up to 55 A with PWM dimming or on/off sequencing. Use Value: Low R_DS(on) minimizes power loss and thermal rise during continuous operation; 30 V rating accommodates load-dump transients per ISO 7637-2.	Use Scenario: Half-bridge low-side switch in 24 V brushed DC motor controllers for factory automation actuators. IC Role / Device Role / Timing Role: Synchronous freewheeling switch with fast turn-off (t_f = 9.5 ns) to suppress back-EMF spikes. Use Value: Integrated body diode with 40 ns trr reduces need for external Schottky catch diodes; LFPAK package improves thermal cycling reliability.
Server PSU OR-ing Circuit	Energy Storage System (ESS) Battery Disconnect
Use Scenario: OR-ing FET in redundant 12 V server power supply outputs to prevent backfeed and enable hot-swap capability. IC Role / Device Role / Timing Role: Bidirectional current-blocking switch controlled by dedicated OR-ing controller IC. Use Value: Ultra-low R_DS(on) cuts conduction loss below 100 mW at 30 A, improving overall PSU efficiency and reducing cooling demand.	Use Scenario: Main contactor replacement in 48 V lithium-ion battery packs for UPS or solar storage systems. IC Role / Device Role / Timing Role: High-reliability isolation switch activated during fault conditions (overcurrent, overtemperature). Use Value: Avalanche rating (90 mJ) safely clamps inductive energy during forced disconnection; 150°C T_ch rating supports operation in sealed enclosures.

Automotive Body Control Module (BCM)

Industrial DC Motor Drive

Use Scenario: High-side power switching for headlight, fog lamp, or HVAC blower control in 12 V vehicle electrical systems.

IC Role / Device Role / Timing Role: Primary power switch managing load current up to 55 A with PWM dimming or on/off sequencing.

Use Value: Low R_DS(on) minimizes power loss and thermal rise during continuous operation; 30 V rating accommodates load-dump transients per ISO 7637-2.

Use Scenario: Half-bridge low-side switch in 24 V brushed DC motor controllers for factory automation actuators.

IC Role / Device Role / Timing Role: Synchronous freewheeling switch with fast turn-off (t_f = 9.5 ns) to suppress back-EMF spikes.

Use Value: Integrated body diode with 40 ns trr reduces need for external Schottky catch diodes; LFPAK package improves thermal cycling reliability.

Server PSU OR-ing Circuit

Energy Storage System (ESS) Battery Disconnect

Use Scenario: OR-ing FET in redundant 12 V server power supply outputs to prevent backfeed and enable hot-swap capability.

IC Role / Device Role / Timing Role: Bidirectional current-blocking switch controlled by dedicated OR-ing controller IC.

Use Value: Ultra-low R_DS(on) cuts conduction loss below 100 mW at 30 A, improving overall PSU efficiency and reducing cooling demand.

Use Scenario: Main contactor replacement in 48 V lithium-ion battery packs for UPS or solar storage systems.

IC Role / Device Role / Timing Role: High-reliability isolation switch activated during fault conditions (overcurrent, overtemperature).

Use Value: Avalanche rating (90 mJ) safely clamps inductive energy during forced disconnection; 150°C T_ch rating supports operation in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB017N04LGATMA1 (Infineon)	40 V V_DSS, R_DS(on) = 1.7 mΩ @ 10 V, PG-HSOF-8 package, higher Q_g (44 nC)	Better conduction loss but slower switching; requires stronger gate driver for same frequency.	Preferred where lower R_DS(on) dominates over switching speed, e.g., high-duty-cycle DC loads.
DMTH3007LPSQ-13 (Diodes Inc.)	30 V V_DSS, R_DS(on) = 3.0 mΩ @ 10 V, PowerDI5060 package, lower thermal resistance (3.5°C/W)	Similar voltage/current rating but smaller footprint; less avalanche ruggedness (E_AR not specified).	Suitable for space-constrained designs where avalanche stress is minimal and PCB thermal design is optimized.

Compared with IPB017N04LGATMA1 and DMTH3007LPSQ-13, the HAT2165H-EL-E offers balanced trade-offs: superior avalanche ruggedness (90 mJ), proven LFPAK reliability in automotive environments, and gate drive flexibility down to 4.5 V - making it especially suitable for safety-critical 12 V/24 V power switching where transient robustness and MCU compatibility are prioritized.

Availability

HAT2165H-EL-E is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor drives, server power OR-ing circuits, and energy storage system disconnects requiring stable component supply and long-term production continuity.

Supply support for HAT2165H-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

The HAT2165H-EL-E belongs to Renesas' high-current power MOSFET product line, engineered for robust, high-efficiency DC power switching in harsh environments - particularly targeting automotive-grade reliability and industrial system longevity.

FAQ

What is the maximum continuous drain current rating for the HAT2165H-EL-E?

The HAT2165H-EL-E is rated for 55 A continuous drain current (I_D) at T_c = 25°C. This rating assumes proper PCB thermal design with adequate copper area under the exposed drain pad. Derating applies above 25°C case temperature - for example, at T_c = 75°C, the usable I_D drops to approximately 35 A based on the power vs. temperature derating curve in the datasheet. Always verify thermal performance in the final layout using the specified θ_ch-C = 4.17°C/W.

Does the HAT2165H-EL-E support 3.3 V or 5 V logic-level gate drive?

The HAT2165H-EL-E is specified for full enhancement at V_GS = 4.5 V, with R_DS(on) = 3.4 mΩ (typ.) under that condition - confirming reliable operation with 5 V microcontrollers. While it can be partially enhanced at 3.3 V, R_DS(on) rises significantly beyond datasheet limits and is not guaranteed. For 3.3 V systems, a gate driver or level shifter is recommended to ensure consistent 4.5 V+ gate bias and avoid thermal runaway in high-current operation.

What is the avalanche energy rating of the HAT2165H-EL-E and how is it tested?

The HAT2165H-EL-E is rated for 90 mJ repetitive avalanche energy (E_AR) at T_ch = 25°C, with I_AP = 30 A and test conditions per the official avalanche test circuit: V_DD = 15 V, R_g ≥ 50 Ω, duty cycle < 0.1%. This rating validates safe operation during inductive load turn-off events - such as solenoid or relay de-energization - without requiring external snubber networks, provided the single-pulse energy does not exceed 90 mJ and thermal limits are observed.

How does the LFPAK package of the HAT2165H-EL-E improve thermal and electrical performance compared to SO-8?

The LFPAK package (PTZZ0005DA-A) used in the HAT2165H-EL-E features an exposed drain pad soldered directly to PCB copper, achieving θ_ch-C = 4.17°C/W - ~30% lower than typical SO-8 packages. Electrically, its three paralleled source pins and short internal bond wires reduce source inductance, improving switching stability and reducing voltage overshoot. Unlike SO-8, LFPAK eliminates plastic encapsulation over the die's top surface, enhancing thermal dissipation and mechanical robustness in vibration-prone environments like automotive under-hood applications.

Is the HAT2165H-EL-E compliant with automotive AEC-Q101 qualification standards?

The HAT2165H-EL-E is manufactured by Renesas Electronics and intended for automotive applications, but the provided datasheet (Rev.6.00, Sep 2005) does not explicitly state AEC-Q101 qualification. Renesas typically documents AEC-Q101 status in separate qualification reports or product change notifications. For automotive production use, confirm current AEC-Q101 compliance directly with a Renesas sales office or authorized distributor - and request the latest PPAP documentation and stress test data before design-in.

HAT2165H-EL-E Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 55A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 27.5A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5180 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK

HAT2165H-EL-E FAQ

1.How can I place an order for HAT2165H-EL-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HAT2165H-EL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HAT2165H-EL-E reliable?

The price and inventory of HAT2165H-EL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HAT2165H-EL-E is usually 5 days.

3.What payment methods are accepted for HAT2165H-EL-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HAT2165H-EL-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HAT2165H-EL-E?

HAT2165H-EL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HAT2165H-EL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HAT2165H-EL-E?

For technical support, including HAT2165H-EL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HAT2165H-EL-E requirements.

6.How does Aetrix verify that HAT2165H-EL-E is sourced from the original manufacturer or authorized distributors?

All HAT2165H-EL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HAT2165H-EL-E meets industry standards.

7.What is the process for return or replacement of HAT2165H-EL-E?

All HAT2165H-EL-E units undergo pre-shipment inspection (PSI). If there is an issue with HAT2165H-EL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HAT2165H-EL-E part is unused and in its original packaging.

Return procedure for HAT2165H-EL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…