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Renesas HAT2165N-EL-E
- Part No.:
- HAT2165N-EL-E
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerSOIC (0.154", 3.90mm Width)
- Datasheet:
-
HAT2165N-EL-E.pdf
- Description:
- MOSFET N-CH 30V 55A 8LFPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,365
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Product details
Overview
HAT2165N-EL-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-efficiency, high-current power switching in DC-DC converters and motor drivers. It features 30 V VDSS, 2.8 mΩ RDS(on) at VGS = 10 V, and supports 55 A continuous drain current with 4.5 V gate drive capability - enabling use with standard logic-level controllers in automotive body electronics and industrial power supplies.
For engineers reviewing the HAT2165N-EL-E datasheet, HAT2165N-EL-E pinout, HAT2165N-EL-E application, or HAT2165N-EL-E equivalent, key selection criteria include its LFPAK-i (PTSP0008DC-A) package thermal performance, avalanche energy rating of 90 mJ, low Qg (33 nC), and body diode reverse recovery time of 40 ns - all critical for synchronous rectification and fast-switching SMPS designs.
Technical Context
This MOSFET employs a trench-gate process optimized for low RDS(on) and fast switching, with gate threshold voltage VGS(off) specified between 1.0 V and 2.5 V. Its Ciss = 5180 pF and Crss = 380 pF support stable operation under high dv/dt conditions typical in half-bridge configurations.
The device integrates a robust body diode rated for 55 A reverse current and 40 ns trr, enabling efficient freewheeling without external Schottky diodes. Thermal resistance θch-C = 4.17 °C/W allows 30 W channel dissipation at Tc = 25°C, making it suitable for surface-mount power stages with minimal heatsinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage compatible with 24 V automotive and industrial bus systems. |
| RDS(on) @ VGS = 10 V | 2.8 mΩ typ. - Enables <100 mW conduction loss at 55 A, reducing thermal load in high-current paths. |
| RDS(on) @ VGS = 4.5 V | 3.7 mΩ typ. - Ensures full enhancement with 3.3 V/5 V microcontroller GPIOs without level-shifting. |
| Qg | 33 nC - Low gate charge minimizes driver power loss and enables >1 MHz switching in resonant topologies. |
| tr/tf | 65 ns / 9.5 ns - Fast edge rates reduce switching transition losses and EMI generation in compact layouts. |
| EAR | 90 mJ - Rated avalanche energy supports unclamped inductive switching in relay drivers and solenoid controls. |
| θch-C | 4.17 °C/W - High thermal conductivity enables direct PCB copper pour cooling without mechanical heatsinks. |
Pinout & Package
Package: LFPAK-i (RENESAS code PTSP0008DC-A), 8-pin exposed-drain Power SO8 variant with 0.6 mm lead pitch and integrated thermal pad. Optimized for high-density mounting and low-inductance layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Low-side return path; electrically tied to thermal pad for optimal heat transfer to PCB ground plane. |
| 4 | Gate | Control input requiring ≤10 µA leakage; driven by logic-level or dedicated gate driver ICs. |
| 5, 6, 7, 8 | Drain | Main power output node; internally connected to large copper area for current handling and thermal conduction. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS = 4.5 V - eliminates need for gate boosters in 5 V or 3.3 V control systems. |
| Low RDS(on) × Qg figure-of-merit | 10.3 Ω·nC - balances conduction and switching losses for high-efficiency buck converters. |
| Robust body diode | trr = 40 ns, VDF = 0.81 V @ 55 A - reduces reverse recovery loss and enables synchronous rectifier replacement in flyback and LLC designs. |
| Avalanche-rated | IAP = 30 A, EAR = 90 mJ - withstands inductive kickback in motor gate drivers and solenoid interfaces without snubbers. |
| LFPAK-i thermal design | θch-C = 4.17 °C/W - achieves 30 W dissipation with 2 oz copper and 200 mm² thermal pad, simplifying thermal management. |
Applications
| Automotive Body Control Module (BCM) | Industrial DC-DC Converter |
|---|---|
Use Scenario: High-side load switching for LED headlamps and HVAC actuators in 12 V vehicle electrical systems. IC Role / Device Role / Timing Role: N-channel high-side switch controlled via charge pump or gate driver IC to replace P-channel devices. Use Value: 2.8 mΩ RDS(on) cuts power loss by >40% vs. legacy 5 mΩ MOSFETs, extending thermal margin in sealed BCM enclosures. |
Use Scenario: Synchronous rectifier in 48 V–12 V isolated buck converter for factory automation I/O modules. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to improve efficiency above 200 kHz switching. Use Value: 40 ns trr and 0.81 V VDF reduce reverse recovery loss and forward drop, raising conversion efficiency from 92% to 94.5% at 20 A. |
| Brushed DC Motor Driver | Hot-Swap Controller |
Use Scenario: Half-bridge H-bridge stage driving 24 V, 30 A brushed motors in warehouse robotics. IC Role / Device Role / Timing Role: Low-side switch in PWM-controlled motor phase leg with integrated body diode freewheeling. Use Value: 55 A ID rating and 90 mJ avalanche energy tolerate stall currents and back-EMF transients without failure. |
Use Scenario: Inrush current limiter and fault protection element in 24 V redundant power supply backplanes. IC Role / Device Role / Timing Role: Main pass transistor controlled by hot-swap controller IC to limit dI/dt during board insertion. Use Value: 33 nC Qg enables precise gate slew rate control, limiting inrush to <5 A/µs while maintaining <100 µs response to overcurrent faults. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB034N04LGATMA1 (Infineon) | 40 V VDSS, 3.4 mΩ RDS(on) @ 10 V, PG-HSOF-8 package | Higher voltage rating suits 36 V battery systems; larger footprint increases layout area by 22% | Choose when 40 V blocking margin is required and thermal pad soldering is feasible. |
| DMTH3010LPS-13 (Diodes Inc.) | 30 V VDSS, 3.0 mΩ RDS(on) @ 10 V, PowerDI5060 package | Same voltage rating but 15% higher RDS(on); lower Ciss (4200 pF) improves EMI behavior | Prefer for noise-sensitive applications where 0.2 mΩ RDS(on) penalty is acceptable. |
Compared with IPB034N04LGATMA1 and DMTH3010LPS-13, the HAT2165N-EL-E delivers the lowest RDS(on) in its 30 V class and superior thermal resistance due to its LFPAK-i construction - making it optimal for space-constrained, thermally demanding power stages where peak efficiency is prioritized over minor EMI trade-offs.
Availability
HAT2165N-EL-E is available at Aetrix Electronics and suitable for automotive body electronics, industrial DC-DC converters, and brushed motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.
Supply support for HAT2165N-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.
The HAT2165N-EL-E belongs to Renesas' high-current logic-level power MOSFET family, engineered specifically for high-efficiency, high-density power switching in automotive body control and industrial power conversion applications.
FAQ
What is the maximum continuous drain current rating for HAT2165N-EL-E?
The HAT2165N-EL-E is rated for 55 A continuous drain current (ID) at Tc = 25°C. This rating assumes proper PCB thermal design with adequate copper area on the source and drain pads. At elevated case temperatures, derating applies per the power vs. temperature curve - e.g., ~35 A at Tc = 75°C. The HAT2165N-EL-E datasheet specifies this under Absolute Maximum Ratings with note that Pch = 30 W at Tc = 25°C.
Does HAT2165N-EL-E support 3.3 V gate drive?
The HAT2165N-EL-E is characterized down to VGS = 4.5 V, where RDS(on) = 3.7 mΩ typ. At 3.3 V, the device remains partially enhanced but RDS(on) rises significantly beyond datasheet specification - not recommended for reliable operation. For true 3.3 V compatibility, a MOSFET with VGS(th) < 1.5 V and guaranteed RDS(on) at 3.3 V should be selected. The HAT2165N-EL-E requires ≥4.5 V for full enhancement.
What is the thermal resistance from channel to case (θch-C) for HAT2165N-EL-E?
The HAT2165N-EL-E has a channel-to-case thermal resistance (θch-C) of 4.17 °C/W, measured under JEDEC JESD51-14 conditions. This value reflects the intrinsic thermal path from the silicon die to the exposed drain pad, and assumes optimal soldering of the thermal pad to a minimum 200 mm² copper area on a 2-layer 2 oz FR-4 PCB. The HAT2165N-EL-E's LFPAK-i package enables this low θch-C through direct die-to-pad conduction.
Is HAT2165N-EL-E suitable for avalanche operation?
Yes - the HAT2165N-EL-E is fully rated for repetitive avalanche operation with IAP = 30 A and EAR = 90 mJ at Tch = 25°C. These values are validated using the standard avalanche test circuit per JEDEC guidelines. Designers must ensure gate resistance Rg ≥ 50 Ω and limit duty cycle to <0.1% for repetitive events. The HAT2165N-EL-E's avalanche capability supports robustness in inductive load switching without external clamping.
What is the gate charge (Qg) of HAT2165N-EL-E and why does it matter?
The HAT2165N-EL-E has a total gate charge (Qg) of 33 nC, measured at VDD = 10 V, VGS = 4.5 V, and ID = 55 A. This parameter directly determines driver power loss and switching speed: lower Qg enables faster turn-on/turn-off with smaller gate drivers and reduced switching losses. For example, at 500 kHz, the HAT2165N-EL-E's 33 nC Qg consumes ~1.65 mW in gate drive power alone - critical for high-frequency SMPS efficiency.
HAT2165N-EL-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-PowerSOIC (0.154", 3.90mm Width)
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 55A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 3.6mOhm @ 27.5A, 10V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 33 nC @ 4.5 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 5180 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 30W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-LFPAK-iV
HAT2165N-EL-E FAQ
1.How can I place an order for HAT2165N-EL-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HAT2165N-EL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HAT2165N-EL-E reliable?
The price and inventory of HAT2165N-EL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HAT2165N-EL-E is usually 5 days.
3.What payment methods are accepted for HAT2165N-EL-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HAT2165N-EL-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HAT2165N-EL-E?
HAT2165N-EL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HAT2165N-EL-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HAT2165N-EL-E?
For technical support, including HAT2165N-EL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HAT2165N-EL-E requirements.
6.How does Aetrix verify that HAT2165N-EL-E is sourced from the original manufacturer or authorized distributors?
All HAT2165N-EL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HAT2165N-EL-E meets industry standards.
7.What is the process for return or replacement of HAT2165N-EL-E?
All HAT2165N-EL-E units undergo pre-shipment inspection (PSI). If there is an issue with HAT2165N-EL-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HAT2165N-EL-E part is unused and in its original packaging.
Return procedure for HAT2165N-EL-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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