Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas HAT2166H-EL-E

Name: HAT2166H-EL-E
Brand: Renesas
SKU: HAT2166H-EL-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: HAT2166H-EL-E

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: HAT2166H-EL-E.pdf

Description:: MOSFET N-CH 30V 45A LFPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,622

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

HAT2166H-EL-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-efficiency, high-current DC power switching in automotive and industrial applications. It delivers R_DS(on) = 2.9 mΩ (typ.) at V_GS = 10 V, supports 45 A continuous drain current, and operates with 4.5 V gate drive - enabling compatibility with standard logic-level controllers in battery-powered systems.

For engineers reviewing the HAT2166H-EL-E datasheet, HAT2166H-EL-E pinout, HAT2166H-EL-E application, or HAT2166H-EL-E equivalent, key selection criteria include its LFPAK (PTZZ0005DA-A) package thermal performance (θ_ch-C = 5.0°C/W), avalanche energy rating (E_AR = 62.5 mJ), and body-diode reverse recovery time (t_rr = 37 ns) for synchronous rectification and motor control designs.

Technical Context

This MOSFET employs a trench-gate process optimized for low conduction loss and fast switching. Its gate charge profile (Q_g = 27 nC, Q_gd = 5.9 nC) enables efficient operation at frequencies up to several hundred kHz in DC-DC converters and load switches.

The integrated body diode exhibits V_DF = 0.83 V (typ.) at I_F = 45 A and t_rr = 37 ns under dI/dt = 100 A/µs - supporting bidirectional current handling in half-bridge configurations without external freewheeling diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage for 12 V automotive and 24 V industrial bus systems.
R_DS(on) @ V_GS = 10 V	2.9 mΩ typ. - Enables ≤1.5 W conduction loss at 45 A, reducing heatsink requirements.
R_DS(on) @ V_GS = 4.5 V	4.0 mΩ typ. - Ensures full enhancement with 5 V microcontroller GPIO or PMIC drivers.
Q_g	27 nC - Low total gate charge minimizes driver power and enables fast turn-on (t_d(on) = 12 ns).
t_rr	37 ns - Short reverse recovery time reduces switching loss and EMI in hard-switched topologies.
E_AR	62.5 mJ - Rated repetitive avalanche energy allows safe operation during inductive load transients.
θ_ch-C	5.0°C/W - High thermal conductivity of LFPAK package supports >25 W channel dissipation at T_c = 25°C.

Pinout & Package

Package: LFPAK (RENESAS code PTZZ0005DA-A), surface-mount, lead-free (Ni/Pd/Au plating), 5-pin configuration with exposed drain pad for thermal and electrical performance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source connection; pins 1–3 are internally bonded and electrically identical for low-inductance parallel routing.
4	Gate	Control terminal; requires <±20 V absolute max rating; low input capacitance (C_iss = 4400 pF) eases driver design.
5	Drain	Main power output terminal; connected to exposed copper pad on bottom for thermal conduction and current carrying capacity.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.5 V - eliminates need for gate boosters in 5 V control systems.
Low R_DS(on) × Q_g figure-of-merit	104 mΩ·nC - balances conduction and switching losses for high-efficiency SMPS and motor drives.
High-density LFPAK packaging	6.1 mm × 4.9 mm footprint with 0.080 g mass - enables compact PCB layouts while maintaining 5.0°C/W thermal resistance.
Robust body diode	t_rr = 37 ns and Q_rr ≈ 2.1 nC - supports ZVS/ZCS techniques and reduces diode recovery loss in bridge circuits.
Avalanche-rated operation	E_AR = 62.5 mJ at T_ch = 25°C - guarantees survivability during unclamped inductive switching events without derating.

Applications

Automotive Body Control Module (BCM)	Industrial 24 V DC Load Switch
Use Scenario: High-side power distribution for lighting, HVAC actuators, and window lift motors in 12 V/24 V vehicle platforms. IC Role / Device Role / Timing Role: N-channel high-side switch with integrated charge pump or level-shifting gate driver. Use Value: R_DS(on) = 2.9 mΩ ensures <1.3 W loss at 45 A, meeting OEM thermal constraints without forced air cooling.	Use Scenario: Remote-controlled power enable for PLC I/O modules, solenoid drivers, and sensor power rails. IC Role / Device Role / Timing Role: Single-pole, high-current electronic fuse with fast overcurrent response via external sense resistor. Use Value: Low Q_g and fast t_f = 7.5 ns allow precise pulse-width control for soft-start and current limiting.
48 V Mild Hybrid DC-DC Converter	Synchronous Rectifier in Isolated Flyback
Use Scenario: Primary-side high-side switch in bidirectional buck-boost converters interfacing 48 V battery with 12 V subsystems. IC Role / Device Role / Timing Role: Main switching element operating at 100–300 kHz with gate drive from isolated gate driver IC. Use Value: C_oss = 1000 pF and Cr_ss = 330 pF minimize capacitive losses and improve ZVS margin at elevated bus voltages.	Use Scenario: Secondary-side synchronous rectifier replacing Schottky diode in 12–24 V output flyback supplies for telecom and industrial equipment. IC Role / Device Role / Timing Role: Low-V_F replacement for 40 V Schottky, driven by transformer-coupled or active timing controller. Use Value: V_DF = 0.83 V (vs. ~0.45 V for Schottky) is offset by R_DS(on) × I² dominance below 20 A, improving full-load efficiency by 1.2%.

Automotive Body Control Module (BCM)

Industrial 24 V DC Load Switch

Use Scenario: High-side power distribution for lighting, HVAC actuators, and window lift motors in 12 V/24 V vehicle platforms.

IC Role / Device Role / Timing Role: N-channel high-side switch with integrated charge pump or level-shifting gate driver.

Use Value: R_DS(on) = 2.9 mΩ ensures <1.3 W loss at 45 A, meeting OEM thermal constraints without forced air cooling.

Use Scenario: Remote-controlled power enable for PLC I/O modules, solenoid drivers, and sensor power rails.

IC Role / Device Role / Timing Role: Single-pole, high-current electronic fuse with fast overcurrent response via external sense resistor.

Use Value: Low Q_g and fast t_f = 7.5 ns allow precise pulse-width control for soft-start and current limiting.

48 V Mild Hybrid DC-DC Converter

Synchronous Rectifier in Isolated Flyback

Use Scenario: Primary-side high-side switch in bidirectional buck-boost converters interfacing 48 V battery with 12 V subsystems.

IC Role / Device Role / Timing Role: Main switching element operating at 100–300 kHz with gate drive from isolated gate driver IC.

Use Value: C_oss = 1000 pF and Cr_ss = 330 pF minimize capacitive losses and improve ZVS margin at elevated bus voltages.

Use Scenario: Secondary-side synchronous rectifier replacing Schottky diode in 12–24 V output flyback supplies for telecom and industrial equipment.

IC Role / Device Role / Timing Role: Low-V_F replacement for 40 V Schottky, driven by transformer-coupled or active timing controller.

Use Value: V_DF = 0.83 V (vs. ~0.45 V for Schottky) is offset by R_DS(on) × I² dominance below 20 A, improving full-load efficiency by 1.2%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB034N04LGATMA1 (Infineon)	R_DS(on) = 3.4 mΩ @ 10 V; TO-263 package; higher C_iss (5200 pF); no specified t_rr.	Higher thermal resistance (θ_jc = 1.5°C/W vs. HAT2166H-EL-E's 5.0°C/W) limits power density in space-constrained designs.	Preferred where board-level thermal vias are limited and TO-263 mounting is acceptable.
DMTH3004LPS-13 (Diodes Inc.)	R_DS(on) = 3.0 mΩ @ 10 V; PowerDI 5060 package; Q_g = 32 nC; t_rr = 45 ns.	Higher Q_g increases driver loss; longer t_rr raises recovery loss in high-frequency synchronous rectifiers.	Better suited for lower-frequency (<100 kHz) load switching where gate drive simplicity outweighs switching loss.

Compared with IPB034N04LGATMA1 and DMTH3004LPS-13, the HAT2166H-EL-E offers superior thermal performance per unit area due to its LFPAK construction, tighter t_rr specification for high-frequency rectification, and lower Q_g/R_DS(on) ratio - making it optimal for compact, high-efficiency 24–48 V power stages.

Availability

HAT2166H-EL-E is available at Aetrix Electronics and suitable for automotive body electronics, industrial 24 V load switching, and 48 V mild hybrid DC-DC converter designs requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for HAT2166H-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

The HAT2166H-EL-E belongs to Renesas' high-current logic-level power MOSFET product line, engineered for robust, thermally efficient switching in demanding 12–48 V automotive and industrial power systems.

FAQ

What is the maximum continuous drain current rating for the HAT2166H-EL-E?

The HAT2166H-EL-E is rated for 45 A continuous drain current (I_D) at T_c = 25°C. This rating assumes proper PCB thermal design with sufficient copper area and thermal vias under the exposed drain pad. At higher case temperatures, derating applies per the Power vs. Temperature Derating curve on page 3 of the datasheet.

Does the HAT2166H-EL-E support 4.5 V gate drive in practical applications?

Yes, the HAT2166H-EL-E is explicitly characterized for 4.5 V gate drive: R_DS(on) = 4.0 mΩ (typ.) at I_D = 22.5 A and V_GS = 4.5 V. This makes the HAT2166H-EL-E compatible with standard 5 V logic outputs and many PMIC gate drivers without requiring level shifting or boosting circuitry.

What is the thermal resistance from channel to case (θ_ch-C) for the HAT2166H-EL-E?

The HAT2166H-EL-E has a channel-to-case thermal resistance (θ_ch-C) of 5.0°C/W, measured under standard test conditions (T_c = 25°C). This value reflects the LFPAK package's high thermal conductivity and is critical for calculating junction temperature rise in high-power applications.

Is the HAT2166H-EL-E suitable for avalanche-prone circuits like inductive load switching?

Yes, the HAT2166H-EL-E is rated for repetitive avalanche energy (E_AR) of 62.5 mJ at T_ch = 25°C with R_g ≥ 50 Ω. Its guaranteed avalanche capability allows safe operation during unclamped inductive turn-off events common in motor drives and solenoid controls - provided layout and gate drive meet the test conditions specified in the datasheet.

What is the body diode forward voltage (V_DF) of the HAT2166H-EL-E at rated current?

The body diode forward voltage (V_DF) of the HAT2166H-EL-E is 0.83 V (typ.) at I_F = 45 A and V_GS = 0 V. This parameter is essential for evaluating conduction loss in freewheeling paths and synchronous rectification efficiency, especially when comparing against discrete Schottky diodes.

HAT2166H-EL-E Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 45A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.8mOhm @ 22.5A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4400 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK

HAT2166H-EL-E FAQ

1.How can I place an order for HAT2166H-EL-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HAT2166H-EL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HAT2166H-EL-E reliable?

The price and inventory of HAT2166H-EL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HAT2166H-EL-E is usually 5 days.

3.What payment methods are accepted for HAT2166H-EL-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HAT2166H-EL-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HAT2166H-EL-E?

HAT2166H-EL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HAT2166H-EL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HAT2166H-EL-E?

For technical support, including HAT2166H-EL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HAT2166H-EL-E requirements.

6.How does Aetrix verify that HAT2166H-EL-E is sourced from the original manufacturer or authorized distributors?

All HAT2166H-EL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HAT2166H-EL-E meets industry standards.

7.What is the process for return or replacement of HAT2166H-EL-E?

All HAT2166H-EL-E units undergo pre-shipment inspection (PSI). If there is an issue with HAT2166H-EL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HAT2166H-EL-E part is unused and in its original packaging.

Return procedure for HAT2166H-EL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…