Renesas HAT2168H-EL-E

Overview

HAT2168H-EL-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-efficiency DC-DC conversion and load switching in industrial power supplies, motor drivers, and e-mobility subsystems. It delivers R_DS(on) = 6.0 mΩ (typ.) at V_GS = 10 V, supports 4.5 V gate drive, and handles continuous drain current up to 30 A with 30 V V_DSS.

For engineers reviewing the HAT2168H-EL-E datasheet, HAT2168H-EL-E pinout, HAT2168H-EL-E application, or HAT2168H-EL-E equivalent, key selection criteria include low conduction loss at 4.5 V logic-level drive, avalanche ruggedness (E_AR = 22 mJ), thermal resistance (θ_ch-C = 8.33 °C/W), and LFPAK package suitability for high-density PCB layouts.

Technical Context

This MOSFET employs a trench-gate process optimized for low R_DS(on) and fast switching (t_d(on) = 8 ns, t_f = 4 ns). Its body diode exhibits t_rr = 25 ns and V_DF = 0.85 V (typ.) at I_F = 30 A, enabling efficient synchronous rectification and flyback recovery in buck converters.

The device operates within a channel temperature range of –55°C to +150°C and is rated for repetitive avalanche energy under controlled conditions (I_AP = 15 A, R_g ≥ 50 Ω). Its C_iss = 1730 pF and Q_g = 11 nC support stable gate driving with minimal Miller effect in high-frequency PWM circuits.

Key Specifications

Pinout & Package

Package: LFPAK (RENESAS code PTZZ0005DA-A), surface-mount, 5-terminal leadframe package with exposed drain pad for enhanced thermal and electrical performance. Dimensions: 4.9 × 3.95 × 1.3 mm (L × W × H).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Compared with IRL3803PbF and DMTH3006LPS-13, the HAT2168H-EL-E offers superior avalanche robustness and identical LFPAK thermal performance while maintaining competitive R_DS(on) at 4.5 V-making it optimal for cost-sensitive, space-constrained industrial and automotive load switches where reliability under transient stress is critical.

Availability

HAT2168H-EL-E is available at Aetrix Electronics and suitable for industrial motor drives, automotive body electronics, and high-density DC-DC converters requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for HAT2168H-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

The HAT2168H-EL-E belongs to Renesas' high-current logic-level power MOSFET product line, engineered for compact, high-efficiency switching in 12–48 V power systems where gate drive simplicity and thermal performance are critical.

FAQ

What is the maximum continuous drain current rating for HAT2168H-EL-E?

The HAT2168H-EL-E is rated for continuous drain current I_D = 30 A at T_c = 25°C. Derating applies above case temperatures: at 75°C, max I_D drops to ~20 A per the power vs. temperature derating curve. This rating assumes proper PCB copper area for thermal conduction and is validated under pulse test conditions (PW ≤ 10 µs, duty cycle ≤ 1%). The HAT2168H-EL-E must be mounted on ≥100 mm² of 2 oz copper with thermal vias for sustained 30 A operation.

Does HAT2168H-EL-E support 3.3 V logic-level gate drive?

No-the HAT2168H-EL-E is specified for full enhancement at V_GS = 4.5 V, with R_DS(on) = 8.8 mΩ (typ.) at that voltage. At 3.3 V, the device remains partially enhanced and exhibits significantly higher on-resistance (>25 mΩ), leading to excessive conduction loss and thermal runaway risk. For 3.3 V systems, a gate driver IC or level shifter is required to ensure reliable operation of the HAT2168H-EL-E.

What is the avalanche energy rating of HAT2168H-EL-E and how is it tested?

The HAT2168H-EL-E is rated for repetitive avalanche energy E_AR = 22 mJ at T_ch = 25°C, with I_AP = 15 A and R_g ≥ 50 Ω. Testing follows the standard avalanche test circuit defined in the datasheet (page 5), using a 15 V V_DD, inductive load, and gate grounded during turn-off. The HAT2168H-EL-E must not exceed T_ch = 150°C during avalanche events, and duty cycle must remain below 0.1% for repetitive operation.

Is HAT2168H-EL-E RoHS compliant and what is its halogen status?

Yes-the HAT2168H-EL-E is RoHS compliant per EU Directive 2011/65/EU and meets JESD204B MSL Level 1 requirements. The device uses Ni/Pd/Au plating on terminals and contains no intentionally added halogens. Full compliance documentation-including substance declarations and test reports-is available through Renesas' official product page and can be provided upon request for the HAT2168H-EL-E.

What is the thermal resistance from channel to case (θ_ch-C) for HAT2168H-EL-E and how does it impact heatsinking?

The HAT2168H-EL-E has θ_ch-C = 8.33 °C/W, measured from channel junction to the exposed drain pad on the bottom of the LFPAK package. This value assumes direct thermal contact between the drain pad and a copper plane or heatsink. Because θ_ch-C dominates total thermal resistance in properly laid-out boards, minimizing interface resistance (e.g., using solder paste instead of thermal tape) is essential. For 30 A operation, the HAT2168H-EL-E requires ≥200 mm² of 2 oz inner-layer copper connected via ≥6 thermal vias to maintain T_ch < 125°C.