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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas HAT2169H-EL-E

Name: HAT2169H-EL-E
Brand: Renesas
SKU: HAT2169H-EL-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: HAT2169H-EL-E

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: HAT2169H-EL-E.pdf

Description:: MOSFET N-CH 40V 50A LFPAK

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Product details

Overview

HAT2169H-EL-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-efficiency, high-current DC power switching in automotive and industrial applications. It delivers R_DS(on) = 2.8 mΩ (typ.) at V_GS = 10 V, supports 4.5 V gate drive, and handles continuous drain current up to 50 A with 40 V V_DSS, making it suitable for low-voltage motor control and load switching circuits.

For engineers reviewing the HAT2169H-EL-E datasheet, HAT2169H-EL-E pinout, HAT2169H-EL-E application, or HAT2169H-EL-E equivalent, key selection criteria include its LFPAK package thermal performance (θ_ch-C = 4.17 °C/W), avalanche energy rating (E_AR = 72 mJ), and body-diode reverse recovery time (t_rr = 40 ns) under 50 A conditions.

Technical Context

This MOSFET employs a trench-gate process optimized for low on-resistance and fast switching. Its gate threshold voltage range (V_GS(off) = 1.0–2.5 V) ensures reliable turn-on with standard logic-level drivers, while the 6650 pF input capacitance (C_iss) and 45 nC total gate charge (Q_g) support efficient PWM operation at frequencies up to several hundred kHz.

The device integrates a robust body-drain diode with V_DF = 0.83 V (typ.) at 50 A and t_rr = 40 ns, enabling synchronous rectification and freewheeling in buck converters and half-bridge topologies without external diodes. Its 150 °C channel temperature rating and LFPAK package enable high-power density mounting on compact PCBs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage in off-state; defines use in ≤40 V systems like 12 V/24 V automotive rails.
R_DS(on) (V_GS = 10 V)	2.8 mΩ typ. - Enables <150 mW conduction loss at 50 A, critical for thermally constrained designs.
I_D (continuous)	50 A - Sustained current capability at T_c = 25 °C; derates per power vs. temperature curve.
Q_g	45 nC - Total gate charge determines driver strength requirement; compatible with standard gate drivers (e.g., TC442x).
t_r/t_f	64 ns / 9.5 ns - Fast switching transitions reduce switching losses in high-frequency SMPS and motor drives.
E_AR	72 mJ - Avalanche energy rating allows safe operation during inductive load turn-off transients without snubbers.
θ_ch-C	4.17 °C/W - Low thermal resistance enables direct heatsinking via PCB copper or small external heatsinks.

Pinout & Package

Package: LFPAK (RENESAS code PTZZ0005DA-A), surface-mount, 5-terminal leadframe package with exposed drain pad for thermal and electrical performance. Dimensions: 4.9 × 3.95 × 1.3 mm (L × W × H), mass 0.080 g.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source connection for internal parallel cells; low-inductance multi-pin layout minimizes source inductance in high-di/dt switching.
4	Gate	Control terminal requiring ≤±20 V drive; 0.5 Ω gate resistance aids EMI control and dV/dt immunity.
5	Drain	Main power output terminal; electrically and thermally connected to exposed copper pad on bottom of package.

Key Features

Feature	Design Value
4.5 V gate drive compatibility	Ensures full enhancement with 5 V microcontrollers and logic-level drivers, eliminating need for level shifters.
Low R_DS(on) at 4.5 V	R_DS(on) = 4.0 mΩ (typ.) at V_GS = 4.5 V enables efficient operation even with marginal gate drive voltage.
High-density LFPAK packaging	Enables >50% smaller footprint than TO-252 while delivering superior thermal performance and lower parasitic inductance.
Fast body-diode recovery	t_rr = 40 ns at 50 A allows use in synchronous rectifier and bidirectional switching applications without oscillation.
Avalanche-rated operation	Rated for repetitive unclamped inductive switching (UIS) up to 30 A peak and 72 mJ, supporting robust system-level reliability.

Applications

Automotive Body Control Module (BCM)	Industrial DC Motor Driver
Use Scenario: Controlling 12 V window lift, seat actuator, or mirror adjustment loads in passenger vehicles. IC Role / Device Role / Timing Role: High-side or low-side power switch managing bidirectional current up to 50 A with PWM duty cycling. Use Value: Low R_DS(on) minimizes heat generation in sealed modules; fast switching reduces audible noise in motor commutation.	Use Scenario: Driving brushed DC motors in factory automation conveyors or robotic joints. IC Role / Device Role / Timing Role: Half-bridge low-side switch in H-bridge configuration, handling 24–48 V supply and 30–50 A peak currents. Use Value: Avalanche rating eliminates need for external flyback diodes; LFPAK thermal performance sustains continuous operation at ambient >85 °C.
Server Power Supply OR-ing FET	LED Streetlight Driver
Use Scenario: Hot-swap and redundancy management in 12 V intermediate bus architectures. IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET acting as ideal diode replacement with ultra-low forward drop. Use Value: R_DS(on) = 2.8 mΩ cuts conduction loss by >80% versus Schottky diodes, improving efficiency and reducing heatsink size.	Use Scenario: Constant-current switching regulator for high-bay LED luminaires operating from 24–48 V DC input. IC Role / Device Role / Timing Role: Primary switch in buck converter topology, switching at 100–500 kHz with 50 A peak inductor current. Use Value: Low Q_g and fast t_f reduce switching losses; body-diode t_rr prevents shoot-through in synchronous rectification mode.

Automotive Body Control Module (BCM)

Industrial DC Motor Driver

Use Scenario: Controlling 12 V window lift, seat actuator, or mirror adjustment loads in passenger vehicles.

IC Role / Device Role / Timing Role: High-side or low-side power switch managing bidirectional current up to 50 A with PWM duty cycling.

Use Value: Low R_DS(on) minimizes heat generation in sealed modules; fast switching reduces audible noise in motor commutation.

Use Scenario: Driving brushed DC motors in factory automation conveyors or robotic joints.

IC Role / Device Role / Timing Role: Half-bridge low-side switch in H-bridge configuration, handling 24–48 V supply and 30–50 A peak currents.

Use Value: Avalanche rating eliminates need for external flyback diodes; LFPAK thermal performance sustains continuous operation at ambient >85 °C.

Server Power Supply OR-ing FET

LED Streetlight Driver

Use Scenario: Hot-swap and redundancy management in 12 V intermediate bus architectures.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET acting as ideal diode replacement with ultra-low forward drop.

Use Value: R_DS(on) = 2.8 mΩ cuts conduction loss by >80% versus Schottky diodes, improving efficiency and reducing heatsink size.

Use Scenario: Constant-current switching regulator for high-bay LED luminaires operating from 24–48 V DC input.

IC Role / Device Role / Timing Role: Primary switch in buck converter topology, switching at 100–500 kHz with 50 A peak inductor current.

Use Value: Low Q_g and fast t_f reduce switching losses; body-diode t_rr prevents shoot-through in synchronous rectification mode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	R_DS(on) = 3.0 mΩ (V_GS = 10 V); TO-220 package; higher θ_JA (62 °C/W vs. LFPAK's ~45 °C/W)	Larger footprint and inferior thermal performance; requires heatsink for >25 A continuous operation.	Choose when legacy TO-220 layout exists and thermal margin permits.
STL220N4F7AG	R_DS(on) = 2.4 mΩ (V_GS = 10 V); PowerFLAT 5×6 package; slightly lower Q_g (40 nC) but no specified avalanche rating	No UIS rating published; unsuitable for unclamped inductive loads without external protection.	Prefer where maximum efficiency is prioritized and inductive stress is controlled externally.

Compared with IRL3803PbF and STL220N4F7AG, the HAT2169H-EL-E offers balanced trade-offs: best-in-class thermal resistance among LFPAK devices, guaranteed avalanche capability, and proven 4.5 V drive compatibility-making it optimal for space-constrained, reliability-critical 12–48 V power switches.

Availability

HAT2169H-EL-E is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor control, server power OR-ing, and LED lighting systems requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for HAT2169H-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

The HAT2169H-EL-E belongs to Renesas' high-current logic-level power MOSFET product line, engineered specifically for compact, high-efficiency DC switching in automotive and industrial environments where thermal density and reliability are critical.

FAQ

What is the maximum continuous drain current rating for the HAT2169H-EL-E?

The HAT2169H-EL-E is rated for 50 A continuous drain current (I_D) at case temperature T_c = 25 °C. This rating decreases with rising case temperature per the power derating curve on page 3 of the datasheet; at T_c = 100 °C, the usable I_D drops to approximately 25 A. The HAT2169H-EL-E must be mounted on adequate copper area or heatsink to maintain safe channel temperature below 150 °C.

Does the HAT2169H-EL-E support 3.3 V gate drive?

No-the HAT2169H-EL-E is not fully enhanced at 3.3 V gate drive. Its gate threshold voltage (V_GS(off)) ranges from 1.0 V to 2.5 V, but R_DS(on) is only specified at V_GS = 4.5 V and 10 V. At 3.3 V, the device operates in linear region with significantly elevated on-resistance and risk of thermal runaway. The HAT2169H-EL-E requires minimum 4.5 V gate drive for reliable switching applications.

What is the thermal resistance from channel to case (θ_ch-C) for the HAT2169H-EL-E?

The HAT2169H-EL-E has a channel-to-case thermal resistance (θ_ch-C) of 4.17 °C/W, measured under T_c = 25 °C conditions. This value reflects direct conduction from the silicon die to the exposed drain pad in the LFPAK package. Effective PCB layout-using ≥200 mm² of 2-oz copper connected to pin 5 (Drain)-is required to realize this thermal performance in practice. The HAT2169H-EL-E does not specify θ_JA due to strong dependency on board design.

Is the HAT2169H-EL-E suitable for avalanche operation?

Yes-the HAT2169H-EL-E is explicitly rated for repetitive avalanche operation: I_AP = 30 A and E_AR = 72 mJ at T_ch = 25 °C with R_g ≥ 50 Ω. This makes the HAT2169H-EL-E appropriate for unclamped inductive switching (UIS) events common in relay driving, solenoid control, and motor phase commutation where voltage spikes exceed V_DSS.

What is the body-diode forward voltage of the HAT2169H-EL-E at 50 A?

The body-diode forward voltage (V_DF) of the HAT2169H-EL-E is 0.83 V (typical) and 1.08 V (maximum) at I_F = 50 A and V_GS = 0 V, per the Electrical Characteristics table on page 2 of the datasheet. This low V_DF contributes to reduced conduction loss during freewheeling intervals in buck or half-bridge converters. The HAT2169H-EL-E body diode also exhibits t_rr = 40 ns, enabling high-frequency synchronous rectification.

HAT2169H-EL-E Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6650 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK

HAT2169H-EL-E FAQ

1.How can I place an order for HAT2169H-EL-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HAT2169H-EL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HAT2169H-EL-E reliable?

The price and inventory of HAT2169H-EL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HAT2169H-EL-E is usually 5 days.

3.What payment methods are accepted for HAT2169H-EL-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HAT2169H-EL-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HAT2169H-EL-E?

HAT2169H-EL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HAT2169H-EL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HAT2169H-EL-E?

For technical support, including HAT2169H-EL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HAT2169H-EL-E requirements.

6.How does Aetrix verify that HAT2169H-EL-E is sourced from the original manufacturer or authorized distributors?

All HAT2169H-EL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HAT2169H-EL-E meets industry standards.

7.What is the process for return or replacement of HAT2169H-EL-E?

All HAT2169H-EL-E units undergo pre-shipment inspection (PSI). If there is an issue with HAT2169H-EL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HAT2169H-EL-E part is unused and in its original packaging.

Return procedure for HAT2169H-EL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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