Renesas HAT2170H-EL-E

Overview

HAT2170H-EL-E from Renesas Electronics is a silicon N-channel MOSFET designed for high-efficiency power switching in DC-DC converters, motor drivers, and load switch applications. It delivers R_DS(on) = 3.3 mΩ (typ.) at V_GS = 10 V, supports 45 A continuous drain current, and operates with 40 V V_DSS, enabling compact, low-loss power stages in industrial and consumer power systems.

For engineers reviewing the HAT2170H-EL-E datasheet, HAT2170H-EL-E pinout, HAT2170H-EL-E application, or HAT2170H-EL-E equivalent, key selection criteria include its LFPAK (PTZZ0005DA-A) package thermal performance, 7 V gate drive compatibility, body-diode reverse recovery time of 40 ns, and avalanche energy rating of 72 mJ - all critical for synchronous rectification and high-frequency switching designs.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching. Its 3.3 mΩ R_DS(on) at 10 V gate drive and 39–65 S forward transfer admittance support high-current, low-voltage operation with minimal gate charge (Q_g = 62 nC), reducing driver losses in high-frequency PWM circuits.

The integrated body diode exhibits V_DF = 0.84 V (typ.) at 45 A and t_rr = 40 ns under 100 A/µs di/dt, making it suitable for freewheeling paths where reverse recovery behavior directly impacts efficiency and EMI in buck or half-bridge topologies.

Key Specifications

Pinout & Package

Package: LFPAK (RENESAS code PTZZ0005DA-A), surface-mount, 5-terminal leadframe package with exposed drain pad for enhanced thermal conduction and mechanical robustness.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Compared with IRL3803PBF and DMT6009LPS-13, the HAT2170H-EL-E uniquely balances ultra-low R_DS(on), industry-leading avalanche robustness, and high-density LFPAK packaging - making it optimal for space-constrained, high-reliability power stages where both conduction loss and transient survivability matter.

Availability

HAT2170H-EL-E is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, and automotive body control modules requiring stable component supply and long-term production continuity.

Supply support for HAT2170H-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The HAT2170H-EL-E belongs to Renesas' high-current logic-level power MOSFET product line, engineered for high-efficiency, high-density power conversion in cost-sensitive and thermally constrained applications.

FAQ

What is the maximum continuous drain current rating for HAT2170H-EL-E?

The HAT2170H-EL-E is rated for 45 A continuous drain current (I_D) at T_c = 25°C. This rating assumes proper PCB copper area and thermal management; derating applies above 75°C case temperature per the power vs. temperature derating curve. The HAT2170H-EL-E must be operated within its Safe Operating Area (SOA) limits, especially under pulse or inductive load conditions.

Does HAT2170H-EL-E support 5 V gate drive?

Yes, the HAT2170H-EL-E is a logic-level MOSFET with V_GS(off) between 1.5 V and 3.0 V, and it specifies R_DS(on) = 3.7 mΩ (typ.) at V_GS = 7 V. While not fully enhanced at 5 V, it delivers usable conduction - confirmed by typical transfer characteristics showing ≥20 A ID at V_GS = 5 V. For guaranteed low-loss operation, 7–10 V drive is recommended. The HAT2170H-EL-E does not require external level shifters with standard 5 V MCU outputs in moderate-current applications.

What is the thermal resistance from channel to case for HAT2170H-EL-E?

The channel-to-case thermal resistance (θ_ch-C) of the HAT2170H-EL-E is 4.17 °C/W, measured under T_c = 25°C conditions. This value reflects conduction through the exposed drain pad into the PCB copper or heatsink, and is critical for calculating junction temperature rise in high-power designs. The HAT2170H-EL-E achieves this performance via its LFPAK package's low-profile copper leadframe and thermal pad geometry - significantly better than SO-8 or DPAK alternatives.

Is HAT2170H-EL-E suitable for avalanche-prone circuits like relay driving or solenoid control?

Yes, the HAT2170H-EL-E is explicitly characterized for avalanche operation: I_AP = 30 A and E_AR = 72 mJ (single-pulse, T_ch = 25°C). These ratings allow safe clamping of inductive kickback without external snubbers in properly designed circuits using R_g ≥ 50 Ω. The HAT2170H-EL-E datasheet provides an avalanche test circuit and waveform guidance - confirming its suitability for relay, solenoid, and motor winding drive where unclamped inductive transients occur.

What is the body-diode forward voltage and reverse recovery time of HAT2170H-EL-E?

The HAT2170H-EL-E body diode has V_DF = 0.84 V (typ.) at I_F = 45 A and t_rr = 40 ns under di/dt = 100 A/µs. These values are measured with V_GS = 0, confirming fast, low-loss freewheeling behavior essential for synchronous rectification. The HAT2170H-EL-E body diode performance is integral to its use in high-frequency buck converters and half-bridge topologies where reverse recovery directly impacts efficiency and EMI.