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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas HAT2171H-EL-E

Name: HAT2171H-EL-E
Brand: Renesas
SKU: HAT2171H-EL-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: HAT2171H-EL-E

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: HAT2171H-EL-E.pdf

Description:: MOSFET N-CH 40V 40A LFPAK

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Product details

Overview

HAT2171H-EL-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-efficiency, high-current DC power switching in industrial and automotive subsystems. It delivers R_DS(on) = 3.8 mΩ (typ.) at V_GS = 10 V, supports 40 A continuous drain current, and operates with 7 V gate drive compatibility - enabling direct interface with low-voltage microcontrollers in motor drivers and DC-DC converters.

For engineers reviewing the HAT2171H-EL-E datasheet, HAT2171H-EL-E pinout, HAT2171H-EL-E application, or HAT2171H-EL-E equivalent, key selection criteria include its LFPAK (PTZZ0005DA-A) package thermal performance (θ_ch-C = 5.0 °C/W), avalanche energy rating (E_AR = 50 mJ), and body-diode reverse recovery time (t_rr = 38 ns) for hard-switching reliability.

Technical Context

This MOSFET employs a trench-gate process optimized for low conduction loss and fast switching. Its gate charge profile (Q_g = 52 nC, Q_gd = 6 nC) enables efficient operation in synchronous rectification and half-bridge topologies up to several hundred kHz.

The device integrates a robust body diode with V_DF = 0.82 V (typ.) at I_F = 40 A and t_rr = 38 ns under dI_F/dt = 100 A/µs - supporting freewheeling in inductive loads without external Schottky supplementation in many 12 V–24 V systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage for 12 V/24 V automotive and industrial bus applications
R_DS(on) (V_GS = 10 V)	3.8 mΩ typ. - Enables <100 mW conduction loss at 20 A, reducing heatsink requirements
I_D (continuous)	40 A - Supports high-current load switching without derating at T_c = 25°C
t_r/t_f	30 ns / 5.5 ns - Fast edge rates minimize switching losses in PWM-driven circuits
E_AR	50 mJ - Rated avalanche energy allows safe operation during inductive turn-off transients
θ_ch-C	5.0 °C/W - Low thermal resistance enables >20 W channel dissipation with minimal case-to-heatsink delta-T
C_iss/C_oss	3750 pF / 760 pF - Capacitance values support stable gate drive design with standard 4.7 Ω resistors

Pinout & Package

Package: LFPAK (RENESAS code PTZZ0005DA-A), surface-mount, 5-pin leadframe package with exposed drain pad for thermal and electrical performance. Dimensions: 4.9 × 3.95 × 1.3 mm (L × W × H), mass 0.080 g.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source connection; pins 1–3 are internally bonded and electrically identical for low-inductance parallel routing
4	Gate	Control terminal requiring ≤±20 V gate-source voltage; low input capacitance (C_iss = 3750 pF) eases driver selection
5	Drain	Main power output terminal; connected to exposed copper pad on underside for thermal conduction and high-current path

Key Features

Feature	Design Value
7 V gate drive capability	Operates fully enhanced with logic-level gate drive, eliminating need for level-shifting in 3.3 V/5 V MCU-controlled switches
Low R_DS(on) at V_GS = 7 V	4.4 mΩ typ. - Maintains sub-5 mΩ on-resistance even with reduced gate voltage, improving efficiency in battery-powered systems
High-density mounting	LFPAK footprint occupies ~40% less board area than comparable SO-8 packages while delivering superior thermal performance
Fast switching with low Q_gd	6 nC gate-to-drain charge minimizes Miller-induced shoot-through risk in bridge configurations
Robust avalanche rating	25 A repetitive avalanche current and 50 mJ single-pulse energy allow reliable operation in unclamped inductive switching

Applications

Automotive Body Control Module (BCM)	Industrial DC Motor Driver
Use Scenario: High-side power distribution for lighting, solenoids, and HVAC actuators in 12 V vehicle electrical systems. IC Role / Device Role / Timing Role: N-channel high-side switch controlled via gate driver IC; handles 40 A peak inrush currents during lamp startup. Use Value: Low R_DS(on) reduces voltage drop and heat generation during sustained 30 A loads, extending relay life and simplifying thermal management.	Use Scenario: Half-bridge leg in 24 V brushed DC motor control for factory automation conveyors. IC Role / Device Role / Timing Role: Low-side switching element synchronized with complementary high-side MOSFET; operates at 20 kHz PWM frequency. Use Value: 38 ns body-diode t_rr and low Q_gd suppress voltage spikes during commutation, eliminating need for snubbers in compact designs.
Server PSU OR-ing Circuit	Telecom DC-DC Converter Primary Switch
Use Scenario: Reverse-current protection in redundant 48 V power supply units using ideal diode configuration. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven by dedicated OR-ing controller with adaptive gate timing. Use Value: 3.8 mΩ R_DS(on) cuts conduction loss by >70% vs. 40 V Schottky, improving full-load efficiency by 1.2% at 30 A.	Use Scenario: Primary-side switching transistor in isolated 48 V–12 V flyback converter for base station power management. IC Role / Device Role / Timing Role: Main power switch operating in discontinuous conduction mode (DCM) at 150 kHz. Use Value: 52 nC total gate charge enables clean turn-on with standard 1 A gate drivers, while 5.0 °C/W θ_ch-C sustains 25 W dissipation without forced air cooling.

Automotive Body Control Module (BCM)

Industrial DC Motor Driver

Use Scenario: High-side power distribution for lighting, solenoids, and HVAC actuators in 12 V vehicle electrical systems.

IC Role / Device Role / Timing Role: N-channel high-side switch controlled via gate driver IC; handles 40 A peak inrush currents during lamp startup.

Use Value: Low R_DS(on) reduces voltage drop and heat generation during sustained 30 A loads, extending relay life and simplifying thermal management.

Use Scenario: Half-bridge leg in 24 V brushed DC motor control for factory automation conveyors.

IC Role / Device Role / Timing Role: Low-side switching element synchronized with complementary high-side MOSFET; operates at 20 kHz PWM frequency.

Use Value: 38 ns body-diode t_rr and low Q_gd suppress voltage spikes during commutation, eliminating need for snubbers in compact designs.

Server PSU OR-ing Circuit

Telecom DC-DC Converter Primary Switch

Use Scenario: Reverse-current protection in redundant 48 V power supply units using ideal diode configuration.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven by dedicated OR-ing controller with adaptive gate timing.

Use Value: 3.8 mΩ R_DS(on) cuts conduction loss by >70% vs. 40 V Schottky, improving full-load efficiency by 1.2% at 30 A.

Use Scenario: Primary-side switching transistor in isolated 48 V–12 V flyback converter for base station power management.

IC Role / Device Role / Timing Role: Main power switch operating in discontinuous conduction mode (DCM) at 150 kHz.

Use Value: 52 nC total gate charge enables clean turn-on with standard 1 A gate drivers, while 5.0 °C/W θ_ch-C sustains 25 W dissipation without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB034N04LGATMA1 (Infineon)	R_DS(on) = 3.4 mΩ @ 10 V; LFPAK56 package; higher C_iss (4300 pF)	Slightly lower conduction loss but slower switching due to higher input capacitance	Preferred where ultra-low R_DS(on) dominates over switching speed; requires stronger gate driver
DMTH4007LPS-13 (Diodes Inc.)	R_DS(on) = 4.0 mΩ @ 10 V; PowerDI5060 package; lower avalanche rating (E_AR = 32 mJ)	Similar thermal resistance but reduced ruggedness in unclamped inductive switching	Suitable for non-avalanche-critical applications like LED drivers; lower cost in high-volume procurement

Compared with HAT2171H-EL-E, IPB034N04LGATMA1 offers marginally better conduction efficiency but demands more gate drive strength, while DMTH4007LPS-13 trades ruggedness for cost and footprint compatibility - making HAT2171H-EL-E the balanced choice for thermally constrained, medium-frequency switching with transient resilience.

Availability

HAT2171H-EL-E is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor drives, server power OR-ing, and telecom DC-DC converters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for HAT2171H-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

The HAT2171H-EL-E belongs to Renesas' high-current power MOSFET product line, engineered specifically for space-constrained, thermally demanding DC switching applications where low R_DS(on), fast switching, and avalanche ruggedness are co-required.

FAQ

What is the maximum gate-to-source voltage rating for HAT2171H-EL-E?

The absolute maximum gate-to-source voltage (V_GSS) for HAT2171H-EL-E is ±20 V. Exceeding this rating risks permanent gate oxide damage. For reliable operation, gate drive circuits should be clamped to ±16 V, as confirmed by the datasheet's I_GSS test condition (±10 µA leakage at ±16 V). This specification applies directly to the HAT2171H-EL-E and is validated across its full temperature range.

Does HAT2171H-EL-E support 7 V gate drive, and what is its R_DS(on) at that voltage?

Yes, HAT2171H-EL-E is explicitly characterized for 7 V gate drive, with R_DS(on) = 4.4 mΩ (typ.) at I_D = 20 A and V_GS = 7 V. This enables direct interfacing with 5 V or 7 V logic outputs without level-shifting, and the value is measured under pulse conditions per datasheet Note 4 - a key differentiator of the HAT2171H-EL-E versus generic 10 V-only MOSFETs.

What is the thermal resistance from channel to case (θ_ch-C) for HAT2171H-EL-E, and how does it impact heatsinking?

HAT2171H-EL-E has a channel-to-case thermal resistance (θ_ch-C) of 5.0 °C/W, measured with the case at 25°C. This low value means a 20 W power dissipation results in only a 100°C temperature rise from junction to case - allowing effective thermal transfer to an external heatsink or PCB copper plane. This parameter is critical for the HAT2171H-EL-E's use in compact, fanless industrial modules.

Is HAT2171H-EL-E rated for avalanche operation, and what are its limits?

Yes, HAT2171H-EL-E is rated for repetitive avalanche operation with I_AP = 25 A and E_AR = 50 mJ at T_ch = 25°C and R_g ≥ 50 Ω. These values are verified per the avalanche test circuit shown in the datasheet (page 5), confirming the HAT2171H-EL-E's suitability for inductive load switching where voltage transients exceed V_DSS.

What is the body-diode forward voltage and reverse recovery time of HAT2171H-EL-E?

The body-diode forward voltage (V_DF) of HAT2171H-EL-E is 0.82 V (typ.) at I_F = 40 A and V_GS = 0, and its reverse recovery time (t_rr) is 38 ns under dI_F/dt = 100 A/µs. These parameters are measured and specified in the Electrical Characteristics table (page 2) and define the HAT2171H-EL-E's freewheeling behavior in half-bridge and synchronous rectifier applications.

HAT2171H-EL-E Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 4.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: 52 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3750 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK

HAT2171H-EL-E FAQ

1.How can I place an order for HAT2171H-EL-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HAT2171H-EL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HAT2171H-EL-E reliable?

The price and inventory of HAT2171H-EL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HAT2171H-EL-E is usually 5 days.

3.What payment methods are accepted for HAT2171H-EL-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HAT2171H-EL-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HAT2171H-EL-E?

HAT2171H-EL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HAT2171H-EL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HAT2171H-EL-E?

For technical support, including HAT2171H-EL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HAT2171H-EL-E requirements.

6.How does Aetrix verify that HAT2171H-EL-E is sourced from the original manufacturer or authorized distributors?

All HAT2171H-EL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HAT2171H-EL-E meets industry standards.

7.What is the process for return or replacement of HAT2171H-EL-E?

All HAT2171H-EL-E units undergo pre-shipment inspection (PSI). If there is an issue with HAT2171H-EL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HAT2171H-EL-E part is unused and in its original packaging.

Return procedure for HAT2171H-EL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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