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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas HAT2172H-EL-E

Name: HAT2172H-EL-E
Brand: Renesas
SKU: HAT2172H-EL-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: HAT2172H-EL-E

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: HAT2172H-EL-E.pdf

Description:: MOSFET N-CH 40V 30A LFPAK

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Product details

Overview

HAT2172H-EL-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-efficiency, high-density power switching in DC-DC converters and motor drivers. It delivers R_DS(on) = 5.8 mΩ (typ.) at V_GS = 10 V, supports 30 A continuous drain current, and operates with 7 V gate drive compatibility - enabling use with standard logic-level controllers in industrial and automotive auxiliary power systems.

For engineers reviewing the HAT2172H-EL-E datasheet, HAT2172H-EL-E pinout, HAT2172H-EL-E application, or HAT2172H-EL-E equivalent, key selection criteria include its LFPAK (PTZZ0005DA-A) package thermal performance (θ_ch-C = 6.25°C/W), fast switching (t_d(off) = 38 ns), low Q_g = 32 nC, and integrated body diode with t_rr = 32 ns for synchronous rectification and flyback recovery.

Technical Context

The HAT2172H-EL-E employs a trench-gate, super-junction–inspired silicon structure optimized for low conduction loss and fast turn-off. Its gate threshold voltage V_GS(off) ranges from 1.5 V to 3.0 V, ensuring reliable enhancement-mode operation with minimal shoot-through risk in half-bridge configurations.

Designed for surface-mount power switching, it features a single-die LFPAK package with exposed-drain thermal pad and three paralleled source terminals (pins 1–3) to minimize source inductance - critical for high di/dt applications such as brushless DC motor phase control and automotive LED headlamp drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage compatible with 24 V nominal automotive and industrial bus systems.
R_DS(on) (V_GS = 10 V)	5.8 mΩ typ. - Enables ≤1.3 W conduction loss at 15 A, reducing heatsink requirements in compact power modules.
I_D (continuous)	30 A - Supports high-current loads without derating when mounted on ≥1-in² 2-oz copper with thermal via array.
Q_g	32 nC - Low gate charge allows efficient driving from microcontroller GPIOs or low-power gate drivers like Renesas HIP2104.
t_d(off)	38 ns - Fast turn-off minimizes overlap loss in synchronous buck converters operating up to 500 kHz.
t_rr (body diode)	32 ns - Enables clean reverse recovery in freewheeling paths, reducing EMI and voltage spikes in inductive switching.
θ_ch-C	6.25°C/W - High thermal conductivity enables 20 W channel dissipation at T_c = 25°C, supporting high-duty-cycle operation.

Pinout & Package

Package: LFPAK (RENESAS code PTZZ0005DA-A), surface-mount, lead-free, Ni/Pd/Au-plated, mass 0.080 g. Exposed drain pad provides primary thermal path to PCB.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Three parallel low-inductance source connections reduce common-source inductance and improve switching stability.
4	Gate	Single gate input with R_g = 0.5 Ω - optimized for direct MCU drive or low-R_g driver interface.
5	Drain	Exposed copper drain pad - must be soldered to large PCB copper area for thermal and current handling.

Key Features

Feature	Design Value
7 V gate drive capability	Operates fully enhanced with logic-level gate voltages, eliminating need for level-shifting in 3.3 V/5 V control systems.
Low R_DS(on) × Q_g figure of merit	186 mΩ·nC - balances conduction and switching losses for high-efficiency SMPS designs.
High-density LFPAK packaging	5.3 mm × 4.9 mm footprint with 0.6 mm profile - saves >40% board area vs. SO-8 while improving thermal resistance.
Fast body diode recovery	t_rr = 32 ns with soft recovery characteristic - reduces voltage overshoot and snubber component count in flyback and LLC topologies.

Applications

Automotive Body Control Module (BCM)	Industrial DC Motor Driver
Use Scenario: Switching 12 V/24 V loads including window lifters, seat adjusters, and HVAC actuators. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling bidirectional brushed DC motors. Use Value: Low R_DS(on) minimizes I²R heating during sustained 15–25 A stall currents; fast switching enables PWM dimming and precise speed regulation.	Use Scenario: Driving 24–48 V brushed or BLDC motors in CNC feed axes and conveyor systems. IC Role / Device Role / Timing Role: Phase-leg switch in 3-phase inverter or H-bridge for torque-controlled motion. Use Value: Three-source-pin layout suppresses parasitic oscillation under high di/dt; t_rr < 35 ns ensures clean commutation without external freewheeling diodes.
Server VRM High-Side Switch	LED Headlamp Power Stage
Use Scenario: High-side synchronous rectifier in multiphase buck converters supplying CPU/GPU core voltage. IC Role / Device Role / Timing Role: Main power FET in 400–600 kHz switching stage with tight duty-cycle control. Use Value: Q_g = 32 nC enables efficient drive from integrated PWM controller gate drivers; θ_ch-C = 6.25°C/W sustains 20 W dissipation in constrained airflow environments.	Use Scenario: Constant-current switching regulator for automotive adaptive front-lighting systems (AFS). IC Role / Device Role / Timing Role: Primary switching element in buck-boost LED driver delivering up to 4 A per channel. Use Value: 40 V V_DSS accommodates load-dump transients up to ±35 V; low C_iss = 2420 pF improves EMI margin at 250 kHz switching frequency.

Automotive Body Control Module (BCM)

Industrial DC Motor Driver

Use Scenario: Switching 12 V/24 V loads including window lifters, seat adjusters, and HVAC actuators.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling bidirectional brushed DC motors.

Use Value: Low R_DS(on) minimizes I²R heating during sustained 15–25 A stall currents; fast switching enables PWM dimming and precise speed regulation.

Use Scenario: Driving 24–48 V brushed or BLDC motors in CNC feed axes and conveyor systems.

IC Role / Device Role / Timing Role: Phase-leg switch in 3-phase inverter or H-bridge for torque-controlled motion.

Use Value: Three-source-pin layout suppresses parasitic oscillation under high di/dt; t_rr < 35 ns ensures clean commutation without external freewheeling diodes.

Server VRM High-Side Switch

LED Headlamp Power Stage

Use Scenario: High-side synchronous rectifier in multiphase buck converters supplying CPU/GPU core voltage.

IC Role / Device Role / Timing Role: Main power FET in 400–600 kHz switching stage with tight duty-cycle control.

Use Value: Q_g = 32 nC enables efficient drive from integrated PWM controller gate drivers; θ_ch-C = 6.25°C/W sustains 20 W dissipation in constrained airflow environments.

Use Scenario: Constant-current switching regulator for automotive adaptive front-lighting systems (AFS).

IC Role / Device Role / Timing Role: Primary switching element in buck-boost LED driver delivering up to 4 A per channel.

Use Value: 40 V V_DSS accommodates load-dump transients up to ±35 V; low C_iss = 2420 pF improves EMI margin at 250 kHz switching frequency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB050N04LGATMA1	R_DS(on) = 5.0 mΩ @ 10 V but requires 4.5 V min gate drive; higher Q_g = 42 nC.	Better conduction loss at high current, but slower switching and higher drive power demand.	Prefer when lowest R_DS(on) dominates over switching speed and gate drive simplicity.
DMTH4007LPS-13	R_DS(on) = 6.8 mΩ @ 10 V; LFPAK56 package with identical footprint but different pinout (drain on pin 5, gate on pin 1).	Same mechanical mounting, but PCB redesign required due to gate/source pin swap.	Consider only if sourcing constraints require Diodes Inc. supply chain; verify layout compatibility before substitution.

Compared with IPB050N04LGATMA1 and DMTH4007LPS-13, the HAT2172H-EL-E offers superior gate-drive flexibility (7 V compatible), lower Q_g, and a proven three-source-pin configuration that enhances stability in high-di/dt motor drives - making it optimal for space-constrained, thermally demanding industrial and automotive power stages where drive simplicity and layout robustness are critical.

Availability

HAT2172H-EL-E is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor control, server VRMs, and LED lighting systems requiring stable component supply across multi-year production cycles.

Supply support for HAT2172H-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

The HAT2172H-EL-E belongs to Renesas' legacy power MOSFET portfolio developed for high-reliability, high-density DC power switching - targeting applications where thermal efficiency, gate-drive simplicity, and mechanical robustness outweigh ultra-low R_DS(on) alone.

FAQ

What is the maximum continuous drain current rating for HAT2172H-EL-E?

The HAT2172H-EL-E is rated for 30 A continuous drain current (I_D) at T_c = 25°C. This rating assumes proper PCB thermal design - specifically, mounting on ≥1-in² 2-oz copper with thermal vias to maintain case temperature within limits. At elevated case temperatures, current must be derated per the "Power vs. Temperature Derating" curve in the datasheet, reaching ~12 A at T_c = 100°C. The HAT2172H-EL-E achieves this performance using its LFPAK package's low θ_ch-C of 6.25°C/W.

Does HAT2172H-EL-E support 3.3 V microcontroller gate drive?

No - the HAT2172H-EL-E does not guarantee full enhancement with 3.3 V gate drive. Its gate threshold voltage V_GS(off) is specified from 1.5 V to 3.0 V, but R_DS(on) is characterized only at V_GS = 7 V and 10 V. At 3.3 V, R_DS(on) rises significantly (>25 mΩ), increasing conduction loss beyond practical use. The HAT2172H-EL-E is explicitly designed for 7 V minimum gate drive, making it compatible with 5 V logic or dedicated gate drivers, but not direct 3.3 V GPIO control without level shifting.

What is the thermal resistance from channel to case (θ_ch-C) for HAT2172H-EL-E?

The HAT2172H-EL-E has a channel-to-case thermal resistance (θ_ch-C) of 6.25°C/W, measured under standard test conditions (T_c = 25°C). This value reflects the device's highly efficient thermal path from the silicon die through the exposed drain pad to the PCB copper. Achieving this performance requires soldering the drain pad to a minimum 100 mm² (≈0.155 in²) copper area with ≥6 thermal vias (0.3 mm diameter) to an internal ground plane. The HAT2172H-EL-E's LFPAK package enables this low θ_ch-C without requiring external heatsinks in many medium-power applications.

Can HAT2172H-EL-E be used in avalanche mode?

Yes - the HAT2172H-EL-E is rated for repetitive avalanche operation with I_AP = 20 A and E_AR = 32 mJ at T_ch = 25°C (R_g ≥ 50 Ω). Its avalanche ruggedness is validated using the standard test circuit per JEDEC guidelines. However, avalanche operation should be limited to fault protection scenarios (e.g., inductive load switching) and not used in normal switching. Designers must ensure peak channel temperature remains below 150°C during avalanche events, and the HAT2172H-EL-E's safe operating area (SOA) graph must be consulted to avoid secondary breakdown.

What is the body diode forward voltage (V_DF) of HAT2172H-EL-E at 30 A?

The body diode forward voltage (V_DF) of the HAT2172H-EL-E is 0.84 V (typical) at I_F = 30 A and V_GS = 0 V, with a maximum of 1.10 V under the same conditions. This low V_DF contributes to reduced conduction loss during freewheeling intervals in synchronous rectifiers and H-bridge motor drives. The diode also exhibits fast reverse recovery (t_rr = 32 ns) and soft recovery behavior, minimizing voltage spikes and EMI generation. These characteristics are intrinsic to the HAT2172H-EL-E's integrated body diode structure and are verified in the "Electrical Characteristics" table on page 2 of its datasheet.

HAT2172H-EL-E Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 7.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2420 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 20W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK

HAT2172H-EL-E FAQ

1.How can I place an order for HAT2172H-EL-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HAT2172H-EL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HAT2172H-EL-E reliable?

The price and inventory of HAT2172H-EL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HAT2172H-EL-E is usually 5 days.

3.What payment methods are accepted for HAT2172H-EL-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HAT2172H-EL-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HAT2172H-EL-E?

HAT2172H-EL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HAT2172H-EL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HAT2172H-EL-E?

For technical support, including HAT2172H-EL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HAT2172H-EL-E requirements.

6.How does Aetrix verify that HAT2172H-EL-E is sourced from the original manufacturer or authorized distributors?

All HAT2172H-EL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HAT2172H-EL-E meets industry standards.

7.What is the process for return or replacement of HAT2172H-EL-E?

All HAT2172H-EL-E units undergo pre-shipment inspection (PSI). If there is an issue with HAT2172H-EL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HAT2172H-EL-E part is unused and in its original packaging.

Return procedure for HAT2172H-EL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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