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Renesas HAT2172N-EL-E
- Part No.:
- HAT2172N-EL-E
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerSOIC (0.154", 3.90mm Width)
- Datasheet:
-
HAT2172N-EL-E.pdf
- Description:
- MOSFET N-CH 40V 30A 8LFPAK
- Quantity:
- Payment:
- Shipping:
Inventory:27,200
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Product details
Overview
HAT2172N-EL-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-efficiency, high-current DC power switching in industrial and automotive subsystems. It delivers RDS(on) = 6.1 mΩ (typ.) at VGS = 10 V, supports 30 A continuous drain current, and operates with 40 V VDSS, enabling use in 12 V/24 V battery-powered motor control and load switching applications.
For engineers reviewing the HAT2172N-EL-E datasheet, HAT2172N-EL-E pinout, HAT2172N-EL-E application, or HAT2172N-EL-E equivalent, key selection criteria include its LFPAK-i (PTSP0008DC-A) package thermal performance (θch-C = 6.25 °C/W), 7 V gate drive capability, low Qg = 32 nC, and body diode trr = 32 ns - all critical for synchronous rectification and fast-switching DC-DC converters.
Technical Context
This MOSFET employs a trench-gate process optimized for low conduction loss and fast switching. Its gate threshold voltage VGS(off) ranges from 1.5 V to 3.0 V, ensuring reliable turn-on with standard logic-level drivers. The device integrates a robust body diode with VDF = 0.84 V (typ.) at IF = 30 A and trr = 32 ns under di/dt = 100 A/µs, supporting bidirectional current handling in H-bridge configurations.
Thermal design is enabled by its channel-to-case thermal resistance of 6.25 °C/W and maximum channel temperature rating of 150 °C. Avalanche capability is rated at IAP = 20 A and EAR = 20 mJ (Tch = 25 °C, Rg ≥ 50 Ω), allowing limited unclamped inductive switching in protection-critical circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum blocking voltage for 12 V/24 V automotive and industrial bus systems. |
| RDS(on) (VGS = 10 V) | 6.1 mΩ typ. - Enables ≤ 9.3 mW conduction loss at 30 A, reducing heatsink requirements. |
| ID (continuous) | 30 A - Supports high-current loads such as BLDC motor phases and solenoid drivers. |
| Qg | 32 nC - Low gate charge enables efficient driving with small gate drivers or microcontroller GPIOs. |
| tr/tf | 20 ns / 4.5 ns - Fast edge rates support >500 kHz switching in synchronous buck regulators. |
| θch-C | 6.25 °C/W - Direct thermal path from die to exposed drain pad allows PCB copper to serve as primary heatsink. |
| Body diode trr | 32 ns - Minimizes reverse recovery loss during freewheeling in bridge topologies. |
Pinout & Package
Package: LFPAK-i (RENESAS code PTSP0008DC-A), surface-mount, thermally enhanced with exposed drain pad. Dimensions: 5.3 mm × 3.95 mm × 1.3 mm max; mass = 0.080 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Low-side reference node; internally tied to common source metallization for minimal loop inductance. |
| 4 | Gate | Control input; requires < ±20 V absolute max; 0.5 Ω typical gate resistance limits ringing. |
| 5, 6, 7, 8 | Drain | High-current power output; electrically and thermally connected to exposed copper pad on bottom of package. |
Key Features
| Feature | Design Value |
|---|---|
| 7 V gate drive compatibility | Guaranteed turn-on with 5 V or 7 V logic outputs, eliminating need for level-shifting gate drivers. |
| Low RDS(on) at low VGS | 6.9 mΩ typ. at VGS = 7 V enables high efficiency even with reduced gate drive voltage. |
| High-density mounting | LFPAK-i footprint occupies ~21 mm² - 40% smaller than SO-8 while delivering superior thermal performance. |
| Fast switching with low Qgd | Qgd = 4.0 nC minimizes Miller plateau time, improving controllability during hard switching. |
| Avalanche-rated operation | Rated for repetitive unclamped inductive switching (IAP = 20 A, EAR = 20 mJ), enhancing system robustness. |
Applications
| Automotive Body Control Module (BCM) | Industrial DC Motor Driver |
|---|---|
Use Scenario: Switching 12 V loads including door locks, window lifts, and HVAC actuators in vehicle BCMs. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling resistive/inductive loads with PWM dimming or position feedback. Use Value: Low RDS(on) reduces power loss and thermal stress in space-constrained modules; 40 V rating covers load-dump transients up to ISO 7637-2 Pulse 5a. |
Use Scenario: Driving brushed DC motors in factory automation conveyors, pumps, and valve actuators. IC Role / Device Role / Timing Role: Half-bridge low-side switch in H-bridge configuration, synchronized with complementary high-side FET. Use Value: Fast tf = 4.5 ns and low Qg enable precise PWM timing at 20–100 kHz, minimizing dead-time losses and audible noise. |
| Server PSU OR-ing Circuit | Telecom Hot-Swap Controller |
Use Scenario: OR-ing diode replacement in redundant 12 V server power supplies to minimize voltage drop and heat generation. IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET acting as ideal diode with active gate control. Use Value: RDS(on) = 6.1 mΩ cuts forward conduction loss by >90% vs. Schottky diodes, improving efficiency and enabling fanless designs. |
Use Scenario: Inrush current limiting and fault isolation in 48 V telecom line cards during hot insertion into live backplanes. IC Role / Device Role / Timing Role: Main pass element in linear or switched hot-swap controller IC interface, handling up to 30 A steady-state current. Use Value: Robust avalanche rating (20 mJ) withstands transient overvoltage events during connector mating; low Ciss = 2420 pF ensures stable gate loop response. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB050N04LGATMA1 | RDS(on) = 4.8 mΩ @ 10 V; TO-263 package; higher Ciss = 3200 pF; θJA = 40 °C/W (vs. HAT2172N-EL-E's θch-C = 6.25 °C/W). | Better conduction loss but inferior thermal coupling; requires larger heatsink or forced air cooling. | Prefer when lowest RDS(on) dominates and board space allows TO-263 footprint. |
| DMTH4007LPS-13 | RDS(on) = 7.0 mΩ @ 10 V; PowerSO-8 package; Qg = 28 nC; tr/tf = 15/4.2 ns; same VDSS = 40 V. | Nearly identical switching speed and gate drive; slightly higher RDS(on); different thermal pad layout. | Drop-in alternative where LFPAK-i assembly infrastructure is unavailable; verify solder paste stencil for PowerSO-8 land pattern. |
Compared with IPB050N04LGATMA1 and DMTH4007LPS-13, the HAT2172N-EL-E offers superior thermal resistance via its LFPAK-i exposed drain, making it optimal for compact, convection-cooled designs - whereas the Infineon part favors high-power density with external heatsinking, and the Diodes Inc. part provides near-equivalent performance in legacy SO-8-compatible layouts.
Availability
HAT2172N-EL-E is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor drives, and telecom hot-swap systems requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.
Supply support for HAT2172N-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.
The HAT2172N-EL-E belongs to Renesas' high-current, low-RDS(on) power MOSFET family targeting space- and thermally constrained DC switching applications where efficiency, reliability, and gate-drive simplicity are critical.
FAQ
What is the maximum continuous drain current rating for the HAT2172N-EL-E?
The HAT2172N-EL-E is rated for 30 A continuous drain current (ID) at Tc = 25 °C. This rating assumes proper PCB copper area for thermal dissipation; derating applies above 25 °C case temperature per the power vs. temperature curve in the datasheet. At Tc = 75 °C, the usable ID drops to approximately 20 A due to thermal constraints.
Does the HAT2172N-EL-E support logic-level gate drive?
Yes, the HAT2172N-EL-E is fully compatible with 5 V and 7 V logic-level gate drive. Its gate threshold voltage VGS(off) is specified from 1.5 V to 3.0 V, and RDS(on) is guaranteed at 6.9 mΩ (typ.) with VGS = 7 V - enabling direct drive from most microcontrollers and gate driver ICs without level-shifting circuitry.
What is the thermal resistance from channel to case (θch-C) for the HAT2172N-EL-E?
The HAT2172N-EL-E has a channel-to-case thermal resistance (θch-C) of 6.25 °C/W. This value reflects the direct thermal path from the silicon die to the exposed drain pad on the bottom of the LFPAK-i package, allowing efficient heat transfer to the PCB copper pour - a key advantage over traditional SO-8 or DPAK packages.
Can the HAT2172N-EL-E be used in avalanche mode?
Yes, the HAT2172N-EL-E is rated for repetitive avalanche operation: IAP = 20 A and EAR = 20 mJ at Tch = 25 °C with Rg ≥ 50 Ω. This capability supports robustness in inductive load switching, though sustained avalanche operation must be carefully evaluated using the derating curves and test conditions defined in the official Renesas datasheet for HAT2172N-EL-E.
What is the body diode forward voltage (VDF) of the HAT2172N-EL-E at 30 A?
The body diode forward voltage VDF of the HAT2172N-EL-E is 0.84 V (typ.) at IF = 30 A and VGS = 0 V. This low VDF - combined with trr = 32 ns - makes the device suitable for freewheeling paths in half-bridge and synchronous rectifier topologies where reverse recovery loss must be minimized.
HAT2172N-EL-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-PowerSOIC (0.154", 3.90mm Width)
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 7.8mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 32 nC @ 10 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 2420 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 20W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-LFPAK-iV
HAT2172N-EL-E FAQ
1.How can I place an order for HAT2172N-EL-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HAT2172N-EL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HAT2172N-EL-E reliable?
The price and inventory of HAT2172N-EL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HAT2172N-EL-E is usually 5 days.
3.What payment methods are accepted for HAT2172N-EL-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HAT2172N-EL-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HAT2172N-EL-E?
HAT2172N-EL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HAT2172N-EL-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HAT2172N-EL-E?
For technical support, including HAT2172N-EL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HAT2172N-EL-E requirements.
6.How does Aetrix verify that HAT2172N-EL-E is sourced from the original manufacturer or authorized distributors?
All HAT2172N-EL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HAT2172N-EL-E meets industry standards.
7.What is the process for return or replacement of HAT2172N-EL-E?
All HAT2172N-EL-E units undergo pre-shipment inspection (PSI). If there is an issue with HAT2172N-EL-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HAT2172N-EL-E part is unused and in its original packaging.
Return procedure for HAT2172N-EL-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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